• Title/Summary/Keyword: Ito processes

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Fabrication of OLED using low cost transparent conductive thin films (저가격 투명전극을 이용한 OLED의 제작)

  • Lee, B.J.;Shin, P.K.;You, D.H.;Ji, S.H.;Lee, N.H.;Park, K.S.
    • Proceedings of the KIEE Conference
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    • 2008.07a
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    • pp.1281-1282
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    • 2008
  • Low cost TCO(Transparent Conductive oxide) thin films were prepared by 3" DC/RF magnetron sputtering systems. For the AZO preparation processes a 99.99% AZO target (Zn: 98 wt.%, $Al_2O_3$: 2 wt.%) was used. In order to verify feasibility of the AZO thin films to organic light emitting device (OLED) application, test organic light emitting device was fabricated based on AZO as TCO, TPD as hole transporting layer (HTL), Alq3 as both emitting layer (EML) and electron transporting layer (ETL), and aluminium as cathode, where the both ITO and AZO surfaces were treated using $O_2$ RF plasma. The I-V characteristics of the AZO/TPD/Alq3/Al OLEDs were evaluated. As the results, the performance of the OLEDs with AZO as transparent conducting anode could be useable.

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A NOTE ON ITO PROCESSES

  • Park, Won
    • Communications of the Korean Mathematical Society
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    • v.9 no.3
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    • pp.731-737
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    • 1994
  • Let $(\Omega, F, P)$ be a probability space with F a $\sigma$-algebra of subsets of the measure space $\Omega$ and P a probability measures on $\Omega$. Suppose $a > 0$ and let $(F_t)_{t \in [0,a]}$ be an increasing family of sub-$\sigma$- algebras of F. If $r > 0$, let $J = [-r, 0]$ and $C(J, R^n)$ the Banach space of all continuous paths $\gamma : J \to R^n$ with the sup-norm $\Vert \gamma \Vert_C = sup_{s \in J} $\mid$\gamma(x)$\mid$$ where $$\mid$\cdot$\mid$$ denotes the Euclidean norm on $R^n$. Let E and F be separable real Banach spaces and L(E,F) be the Banach space of all continuous linear maps $T : E \to F$ with the norm $\Vert T \Vert = sup {$\mid$T(x)$\mid$_F : x \in E, $\mid$x$\mid$_E \leq 1}$.

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Electrical and Optical Properties of Ti-ZnO Films Grown on Glass Substrate by Atomic Layer Deposition (원자층 증착법을 통하여 유리 기판에 증착한 Ti-ZnO 박막의 전기적 광학적 특성)

  • Lee, U-Jae;Kim, Tae-Hyeon;Gwon, Se-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.57-57
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    • 2018
  • Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

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Double Hole Transport Layers Deposited by Spin-coating and Thermal-evaporating for Flexible Organic Light Emitting Diodes

  • Chen, Shin Liang;Wang, Shun Hsi;Juang, Fuh Shyang;Tsai, Yu Sheng
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.741-744
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    • 2007
  • The research applied the processes of spin-coating and thermal-evaporating in proper order to deposit the hole transport material N,N'-Bis(naphthalen-1-yl)- N,N'-bis(phenyl)-benzidine (NPB) on the ITO substrate to make flexible organic light emitting diodes (FOLED) with double hole transport layer.

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A Study on the Stability of Langmuir-Blodgett Films Mixed with Myristic Acid and Stearic Acid (미리스트산과 스테아르산 혼합 LB막의 안정성에 관한 연구)

  • Park, Keun-Ho
    • Journal of the Korean Applied Science and Technology
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    • v.34 no.2
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    • pp.376-381
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    • 2017
  • We were investigated by cyclic voltammetry to the stability through the electrochemical characteristics of Langmuir-Blodgett films mixed with myristic acid and stearic acid. Fatty acid mixture monolayer LB films was deposited by the LB method on the indium tin oxide(ITO) glass. The electrochemical properties was measured by cyclic voltammetry with a three-electrode system in 0.01 N $NaClO_4$ solution. The measuring range is continuously oxidized to 1650 mV, with an initial potential of -1350 mV was reduced. Scanning rates of 50, 100, 150, 200, and 250 mV/s was set. As a result, LB monolayer films of fatty acid mixture was appeared on irreversible processes by the oxidation current from the cyclic voltammogram. Diffusion coefficient (D) of fatty acid mixture was calculated $7.9{\times}10^{-2}cm^2s^{-1}$ at 0.01 N $NaClO_4$ solution.

Improvement of Efficiency in $\pi$-Conjugated Polymer Based on Phenothiazine by Introduction of Oxadiazole Pendant as a Side Chain

  • Choi, Ji-Young;Lee, Bong;Kim, Joo-Hyun;Lee, Kye-Hwan
    • Macromolecular Research
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    • v.17 no.5
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    • pp.319-324
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    • 2009
  • A new $\pi$-conjugated polymer, poly[(2-methoxy-(5-(2-(4-oxyphenyl)-5-phenyl-1,3,4-oxadiazole)-hexyloxy))-1,4-pheny1ene-1,2-etheny1ene-alt-(10-hexyl-3,7-phenothiazine )-1,2-ethenylene] (PTOXDPPV), was synthesized by the Heck coupling reaction. The electron transporting unit, conjugated 1,3,4-oxadiazo1e (OXD), is attached on the main chain via linear 1,6-hexamethylenedioxy chain. The band gap and photoluminescence (PL) maximum of PTOXDPPV are 2.35 eV and 565 nm, respectively. These values are very close to those of po1y[(2,5-didecyloxy-1,4-phenylene-1,2-etheny1ene )-alt-(l0-hexyl-3,7-phenothiazine)-1,2-ethenylene] (PTPPV), which does not have OXD pendant. The estimated HOMO energy level of PTOXDPPV was -4.98 eV, which is very close to that of PTPPV (-4.91 eV). The maximum wavelength of EL device based on PTOXDPPV and PTPPV appeared at 587 and 577 nm, respectively. In the PL and EL spectrum, the emission from OXD pendant was not observed. This indicates that the energy transfer from OXD pendants to main chain is occurred completely. The EL device based on PTOXD-PPV (ITO/PEDOT/PTOXDPPV/AI) has an efficiency of 0.033 cd/A, which is significantly higher than the device based on PTPPV (ITO/PEDOT/PTPPV/AI) ($4.28{\times}10^{-3}\;cd/A$). From the results, we confirm that the OXD pendants in PTOXDPPV facilitate hole-electron recombination processes in the emissive layer effectively.

Electrochromic Properties of Li+-Modified Prussian Blue (리튬이온이 첨가된 프루시안 블루의 전기변색 특성 연구)

  • Yoo, Sung-Jong;Lim, Ju-Wan;Park, Sun-Ha;Won, Ho-Youn;Sung, Yung-Eun
    • Journal of the Korean Electrochemical Society
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    • v.10 no.2
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    • pp.126-131
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    • 2007
  • The durability problem of Prussian blue in non-aqueous $Li_+$-based electrolytes has been due to the degradation of the Prussian blue electrode matrix during the insertion/extraction processes by $Li_+$. In this work, we designed and synthesised the Prussian blue without reducing the electrochromic performance in non-aqueous $Li_+$-based electrolytes. Prussian blue was electrodeposited on a glass which has ITO coating, and the coating solution is a mixture solution of $FeCl_3\;and\;K_3Fe(CN)_6$ with deionized water added HCl, KCl, and LiCl, respectively. The durability of Prussian blue was evaluated by an in-situ transmittance measurement during a continuous and pulse potential cycling test, and measured by electroactive layer thickness due to evaluating the degradation.

A Study on the Stability of Langmuir-Blodgett(LB) Films of Saturated Fatty Acid Monolayer (포화지방산 단분자층 LB막의 안정성에 관한 연구)

  • Park, Keun-Ho
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.3
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    • pp.352-358
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    • 2014
  • We were investigated the stability through the electrochemical characteristics of saturated fatty acid(C12, C14, C16, C18) monolayer LB films by cyclic voltammetry. Saturated fatty acid monolayer LB films was deposited on the indium tin oxide(ITO) glass by the LB method. The electrochemical properties were measured by cyclic voltammetry with a three-electrode system in 0.1 N $NaClO_4$ solution. The measuring range was continuously oxidized to 1650 mV, with an initial potential of -1350 mV was reduced. Scanning rates of 50, 100, 150, 200, and 250 mV/s were set. As a result, LB monolayer films of saturated fatty acid were appeared on irreversible processes by the oxidation current from the cyclic voltammogram. Diffusion coefficient(D) of saturated fatty acid(C12, C14, C16, and C18) was calculated 22.231, 2.461, 7.114 and 2.371 ($cm^2s^{-1}{\times}10^{-4}$) in 0.1 N $NaClO_4$ solution, respectively.

Fabrication of Flexible Solid-state Dye-sensitized $TiO_2$ Nanotube Solar Cell Using UV-curable NOA

  • Park, Ik-Jae;Park, Sang-Baek;Kim, Ju-Seong;Jin, Gyeong-Seok;Hong, Guk-Seon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.396-396
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    • 2012
  • $TiO_2$ anatase nanotube arrays (NTAs) were grown by electrochemical anodization and followed annealing of Ti foil. Ethylene glycol/$NH_4F$-based organic electrolyte was used for electrolyte solution and using second anodization process to obtain free-standing NTAs. After obtaining NTAs, ITO film was deposited by sputtering process on bottom of NTAs. UV-curable NOA was used for attach free-standing NTAs on flexible plastic substrate (PEN). Solid state electrolyte (spiro-OMeTAD) was coated via spin-coating method on top of attached NTAs. Ag was deposited as a counter electrode. Under AM 1.5 simulated sunlight, optical characteristics of devices were investigated. In order to use flexible polymer substrate, processes have to be conducted at low temperature. In case of $TiO_2$ nano particles (NPs), however, crystallization of NPs at high temperature above $450^{\circ}C$ is required. Because NTAs were conducted high temperature annealing process before NTAs transfer to PEN, it is favorable for using PEN as flexible substrate. Fabricated flexible solid-state DSSCs make possible the preventing of liquid electrolyte corrosion and leakage, various application.

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Optical and electrical property of Indium-doped ZnO (IZO) grown by Atomic Layer Deposition (ALD) using Et2InN(TMS)2 as In precursor and H2O oxidant

  • Jo, Yeong-Jun;Jang, Hyo-Sik
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.421.1-421.1
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    • 2016
  • We studied indium-doped zinc oxide (IZO) film grown by atomic layer deposition (ALD) as transparent conductive oxide (TCO). A variety of TCO layer, such as ZnO:Al (AZO), InSnO2(ITO), Zn (O,S) etc, has been grown by various method, such as ALD, chemical vapor deposition (CVD), sputtering, laser ablation, sol-gel technique, etc. Among many deposition methods, ALD has various advantages such as uniformity of film thickness, film composition, conformality, and low temperature deposition, as compared with other techniques. In this study, we deposited indium-doped zinc oxide thin films using diethyl[bis(trimethylsilyl)amido]indium [Et2InN(TMS)2] as indium precursor, DEZn as zinc precursor and H2O as oxidant for ALD and investigated the optical and electrical properties of IZO films. As an alternative, this liquid In precursor would has several advantages in indium oxide thin-film processes by ALD, especially for low resistance indium oxide thin film and high deposition rate as compared to InCp, InCl3, TMIn precursors etc. We found out that Indium oxide films grown by Et2InN(TMS)2 and H2O precursor show ALD growth mode and ALD growth window. We also found out the different growth rate of Indium oxide as the substrate and investigated the effect of the substrate on Indium oxide growth.

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