• 전기전자학회논문지
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• 제19권1호
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• pp.41-44
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• 2015

소자의 집적화에 필수적인 소자 분리공정에서 화학약품의 오염 문제등을 발생시키는 화학적 기계연마기술(CMP) 공정을 사용하지 않고 벌크 finFET(fin field effect transistor) 의 트랜치 구조를 형성할 수 있는 공정에 대하여 제안하였다. 사진 감광막 도포시 발생하는 두께차이와 희생층으로 사용되는 실리콘 질화막을 사용하면 에칭 공정만을 사용하여 상대적으로 표면 위로 돌출된 부분의 실리콘 산화막 층을 에칭하는 것은 물론 finFET 의 채널로 사용되는 실리콘 트랜치 구조를 한번에 형성할 수 있는 특징을 갖는다. 본 연구에서는 AZ1512 사진 감광막을 사용하여 50 나노미터급 실리콘 트랜치 구조를 형성하는 공정을 수행하였으며 그 결과를 소개한다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.641-649
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• 2016

In this paper, a novel time-domain measurement technique on a high parallelism probe card with protection resistors installed is proposed. The measured signal amplitude decreases when the measurement is performed by Needle Auto Calibration (NAC) probing on a high parallelism probe card with installed resistors. Therefore, the original signals must be carefully reconstructed, and the compensation coefficient, which is related to the number of channel branches and the value of protection resistors, must be introduced. The accuracy of the reconstructed signals is analyzed based on the varying number of channel branches and various protection resistances. The results demonstrate that the proposed technique is appropriate for evaluating the overall signal performance of probe cards with Automatic Test Equipment (ATE), which enhances the efficiency of probe card performance test dramatically.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1829-1831
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• 2001

A novel multi-section power divider configuration is proposed to obtain wide-band frequency performance up to microwave frequency region. Design procedures for the proposed microwave broadband power divider are composed of a planar multi-section three-ports hybrid and a waveguide transformer design procedures. The multi-section power divider is based on design theory of the optimum quarter-wave transformer. Furthermore, in order to obtain the broadband isolation performance between the two adjacent output ports, the odd mode equivalent circuit should be matched by using the lossy element such as resistor. The derived design formula for calculating these odd mode matching elements is based on the singly terminated filter design theory. The waveguide transformer section is designed to suppress the propagation of the higher order modes such as waveguide modes due to employing the metallic electric wall. Simulation and experiment show excellent performance of multi section power divider.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.543-544
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• 2008

Nowadays, the research on the system integration using various technologies, like MCM-C, MCM-L and MCM-D. Especially, MCM-D technology is suitable for mmwave application due to its high resolution of patterning and thermal property similar to that of semiconductor devices. In this work, integrated passive devices like inductor, capacitor and resistor are evaluated on the GaAs substrate and their characteristics are examined. And finally, the Wilkinson power divider using lumped IPD are evaluated on GaAs substrate and it shows low insertion loss below 0.5 dB and the isolation over 15 dB.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.273-277
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• 2003

This paper presents a structure of the Wilkinson power divider that can suppress the 9ea harmonic output. The power divider consists of ${\lambda}/4n$ open stubs, which are located at the $3{\lambda}/4$ branches and parallel connection of resistor which shunts the output ports. Experimental results show that this power divider suppresses from 1st to 9th harmonic components to less than -37dB, while maintaining the characteristics of a conventional Wilkinson power divider; featuring an equal power split, a simultaneous impedance matching at all ports and a good isolation between output ports. these results agree quite well with the simulation results.

• Journal of electromagnetic engineering and science
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• 제19권1호
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• pp.42-47
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• 2019

This paper introduces a modified Wilkinson power divider that uses uniform transmission lines for various terminated impedances and an arbitrary power ratio. For the designed power ratio, the proposed divider changes only the electrical lengths of the transmission lines between the input and output ports, and those between the output ports and the isolation resistor. In this case, even when various termination impedances of the ports exist, the divider characteristics are satisfied. To verify the feasibility of the proposed divider, two circuits were designed to operate at a frequency of 2 GHz with 2:1 and 4:1 power splitting ratios and various terminated impedances of 40, 70, and $60{\Omega}$ for one circuit, and 50, 70, and $60{\Omega}$ for the other. The measurement and simulation results were in good agreement.

• Journal of electromagnetic engineering and science
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• 제10권1호
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• pp.28-34
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• 2010

This paper introduces a new U.S. ultra-wideband(UWB: 3.1~10.6 GHz) 1:2 power divider based on a single section Wilkinson type configuration. The divider provides very flat in-band power splitting, high isolation, low insertion loss, sharp roll-off bandpass filtering, and DC blocking characteristics. The circuit consists of a $\lambda$/4 Y resonator, three capacitively coupled $\lambda$/2 short-circuited lines, and a resistor between the two output ports. The circuit structure was simulated with ADS and HFSS, and realized with low-temperature co-fired ceramic(LTCC) green tape, which has a dielectric constant of 7.8. $|S_{11}|$ better than 10 dB, $|S_{21}|$ and $|S_{31}|$ less than 3.2 dB, with both $|S_{22}|$ and $|S_{32}|$ measured as better than 12 dB for the whole UWB band. Measurement results agree closely with HFSS simulation results. The power divider has a compact size of $4\times9\times0.6mm^3$.

• Journal of electromagnetic engineering and science
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• 제8권3호
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• pp.129-133
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• 2008

An integrated passive device(IPD) technology by semi-insulating(SI)-GaAs-based fabrication has been developed to meet the ever increasing needs of size and cost reduction in wireless applications. This technology includes reliable NiCr thin film resistor, thick plated Cu/Au metal process to reduce resistive loss, high breakdown voltage metal-insulator-metal(MIM) capacitor due to a thinner dielectric thickness, lowest parasitic effect by multi air-bridged metal layers, air-bridges for inductor underpass and capacitor pick-up, and low chip cost by only 6 process layers. This paper presents the Wilkinson power divider with excellent performance for digital cellular system(DCS). The insertion loss of this power divider is - 0.43 dB and the port isolation greater than - 22 dB over the entire band. Return loss in input and output ports are - 23.4 dB and - 25.4 dB, respectively. The Wilkinson power divider based on SI-GaAs substrates is designed within die size of $1.42\;mm^2$.

• 센서학회지
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• 제3권1호
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• pp.12-18
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• 1994

본 연구에서는, calorimetric 형 흐름센서 소자를 미세가공된 실리콘 구조상에 제작하고 그 특성을 평가하였다. 기체의 흐름을 통한 냉각효과 및 가열효과를 가열저항을 중심으로 양측에 배열된 두개의 온도센서로 측정하였으며 절연박막 다이아프램을 기판으로 사용하여 열적절연효과를 향상시켰다. 제작된 흐름센서는 $0{\sim}0.25grs/min$의 질소가스의 흐름 범위 내에서, 10V의 브릿지 인가전압에 대해 $0{\sim}378.4mV$의 출력전압을 발생하였으며, 센서가 동작 영역에 이르는 시간은 10초 내외로 나타났다.

• 전자공학회논문지A
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• 제31A권5호
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• pp.113-120
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• 1994

Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.