• 제목/요약/키워드: Irradiation defects

검색결과 142건 처리시간 0.024초

Carrying Out and Management of High Level Solid Radwaste for Hot Cell in IMEF (조사재시험시설의 핫셀 내부 고준위 고체폐기물 반출 및 처리)

  • 주용선;송웅섭;김도식;유병옥;정양홍;백승제;오완호;이은표;홍권표
    • Proceedings of the Korean Radioactive Waste Society Conference
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    • 한국방사성폐기물학회 2003년도 가을 학술논문집
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    • pp.168-171
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    • 2003
  • The IMEF(Irradiated Materials Examination Facility), located in KAERI site, is a hot cell facility to test and evaluate the irradiation defects or embrittlement through post-irradiation examination(PIEs) of irradiated nuclear fuels and structural materials which are come from HANARO research reactor and commercial nuclear power plants. Therefore, to carry out its own function, the high level solid radioactive wastes, produced through PIEs, are periodically carried out and managed from hot cell to monolith. So far, approximately 30 drums which contains 50 liters are transported to monolith, and it is shown that the quantity is slowly increasing, In this paper, the procedures and work contents of the high level solid radwaste carrying out and management for IMEF are described in detail.

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A SEM STUDY OF RADIATION EFFECTS ON THE RAT MOLAR ENAMEL FORMATION (방사선조사가 백서 구치 법랑질형성에 미치는 영향에 관한 주사전자현미경적 연구)

  • Lee Kyung-Ho;Park Tae-Won
    • Journal of Korean Academy of Oral and Maxillofacial Radiology
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    • 제25권2호
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    • pp.409-422
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    • 1995
  • The purpose of this study was to investigate the effects of radiation on the formation of rat molar enamel at the developmental stage. The experimental animals were divided into five groups and were irradiated single dose of 396cGy ; 1 st group on 14th day of gestation, 2nd group on 19th day of gestation, 3rd group on 3 days after birth, 4th group on 8 days after birth, 5th group on 28 days after birth. The control and 1, 2, 3, and 4th experimental groups were sacrificed on 2, 4, and 6 weeks and the 5th groups were sacrificed on 1 day and 2 weeks after irradiation. Distal 1/2 and occlusal 1/3 enamel surface of lingual side of lingual cusp, and fractured surface of lingual side of lingual cusp in a longitudinal direction of the mandibular first molar were examined using scanning electron microscope. The following results were obtained. 1. The roughness of enamel surface and enamel hypoplasia were increased in a sequence of 4th, 1st, 2nd, and 3rd experimental group, and the enamel cracks were increased in the 1st and 2nd experimental group. 2. The pattern of enamel hypoplasia had a network form on the 1st and 2nd experimental group, and appeared a linear shape on the 3rd experimental group, and then the crator-like enamel defects were observed in all experimental groups (especially 1st and 2nd experimental group) except 5th. 3. Dentinoenamel junction showed the clear-cut and straight appearance except 5th experimental group. 4. There was no significant difference between 5th experimental and control group.

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Investigation of Proton Irradiated Effect on n, p type Silicon by Positron Annihilation Method (양전자 소멸 측정에 의한 n, p형 실리콘 구조 특성)

  • Lee, C.Y.
    • Journal of the Korean Vacuum Society
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    • 제21권5호
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    • pp.225-232
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    • 2012
  • It is described that the proton beam induceds micro-size defects and electronic deep levels in n or p type single crystal silicon. Positron lifetime and Coincidence Doppler Broadening Positron Annihilation Spectroscopy were applied to study of characteristics of p type and n type silicon samples. In this investigation the numerical analysis of the Doppler spectra was employed to the determination of the shape parameter, S, defined as the ratio between the amount of counts in a central portion of the spectrum and the total counts of whole spectrum. The samples were exposed by 3.98 MeV proton beams ranging between 0 to ${\sim}10^{14}$ particles. The S-parameter values strongly depend on the irradiated proton beam, that indicated the defects generate more. Positron lifetime shows that positrons trapped in vacancies and lifetime ${\tau}_2$ increased according to proton irradiation.

Characteristic Analysis of Vertical Alignment by Ion-beam Irradiation Angle and Energy Density (이온빔 조사 각도와 에너지강도에 의한 수직 배향막의 특성 분석)

  • Kang, Dong-Hun;Oh, Byeong-Yun;Kim, Byoung-Yong;Han, Jin-Woo;Kim, Young-Hwan;Ok, Chul-Ho;Han, Jeong-Min;Lee, Sang-Keuk;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 한국전기전자재료학회 2007년도 추계학술대회 논문집
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    • pp.398-398
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    • 2007
  • The Liquid Crystal (LC) alignment uniformity is very important in LC devices. The alignment mechanism of LC molecules on a rubbed polyimide (PI) surface is very important for both LC fundamental research and application. So, Generally a rubbing method to align LC has been widely used to mass-produce LCD panels. But because rubbing method is contact method between rubbing fabric and indium-tin-oxide glass or flexible substrate, rubbing method has some defects, such as the electrode charges and the creation of contaminating particles. Thus we strongly recommend a non-contact alignment technique for getting rid of some defects of rubbing method. Most recently, the LC aligning capabilities achieved by ion-beam exposure on the organic and nonorganic thin film surface have been reported successfully. In this research, we studied the tilt angle generation and electro-optical performances for a NLC on homeotropic polyimide surfaces with ion-beam exposure. The LC aligning capabilities of a nematic liquid crystal (NLC) on a homeotropic PI surface using a new ion-beam method were studied. On the homeotropic PI surface, the tilt angle of the NLC by exposure ion-beam had a tendency to decrease as increased ion-beam energy density. And, on the homeotropic PI surface, the alignment character of the NLC with respect to ion-beam energy was good. And we achieved satisfactory result for EO character.

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ESR Study of Paramagnetic Defects of the ${\gamma}$-irradiated Potassium Sulfate Single Crystal (${\gamma}$-선에 조사된 황산칼륨 단결정의 상자성 결함에 관한 전자스핀공명 연구)

  • Yo Chul Hyun;Chung Won Yang;Jong In Hong;Eun Ok Kim;Jung Sung Yang
    • Journal of the Korean Chemical Society
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    • 제25권6호
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    • pp.367-375
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    • 1981
  • Single crystals of Potassium Sulfate ($K_2SO_4$) have been grown from the saturated solution by the evaporation method at the optimum conditions. Radiation damages in the crystal by ${\gamma}$-irradiation of about $12{\times}10^6$ Roentgen have given rise to paramagnetic centers or paramagnetic defects. Electron spin resonance (ESR) spectra of the centers are obtained with the X-band EPR spectrometer at room temperature. The ESR peaks of the paramagnetic species are found to be anisotropic but the peak of $SO_3-$ radical is an isotropic of Gaussian shape at g = 2.0036. A number of ESR spectra of the crystal for angular variation of the anisotropic peaks are recorded at various orientations of rotation about a, b and c crystallographic axes respectively. The g-values are calculated from the line position between anisotropic peaks and the isotropic one and then principal g-values and its direction cosines of the species are obtained by diagonalization of 9 matrix elements of the corresponding g-values. All the paramagnetic defects are identified by the characteristic principal g-values and its direction cosines.

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A study on point defects induced with neutron irradiation in silicon wafer (중성자 조사에 의해 생성된 점결함 연구)

  • 김진현;이운섭;류근걸;김봉구;이병철;박상준
    • Proceedings of the KAIS Fall Conference
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    • 한국산학기술학회 2002년도 춘계학술발표논문집
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    • pp.151-154
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    • 2002
  • 반도체 소자의 기판 재료로 사용되고 있는 실리콘 웨이퍼는 그 정밀도가 매우 중요하다. 본 연구에서는 균일한 Dopant 농도 분포를 얻을 수 있는 중성자 변환 Doping을 이용하여 실리콘에 인(P)을 Doping하는 연구를 수행하였다. 중성자 변환 Doping, 즉 NTD(Neutron Transmutation Doping)란 원자번호 30인 실리콘 동위원소에 중성자가 조사되면 원자번호 31인 실리콘으로 변환되고, 2.6시간의 반감기를 갖고 decay 되면서 인(P)으로 변하게 되어 실리콘 웨이퍼에 n-type 전도를 갖게 하는 것을 말한다. 본 연구에서는 하나로 원자로를 이용하여 고저항(1000-2000Ωcm) FZ 실리콘 웨이퍼 에 두 개의 조사공에서 중성자 조사하여 저항의 변화를 관찰하였고, 중성자 조사시 발생하는 점결함을 분석하여 점결함이 저항 변화에 미치는 영향을 알아보았다. 중성자 조사 전 이론적 계산에 의해 HTS조사공은 5Ωcm, 20.1Ωcm 이고 IP3조사공은 5Ωcm, 26.5Ωcm, 32.5Ωcm 이었고, 중성자 조사 후 SRP로 측정한 결과 실제 저항값은 HTS-1 2.10Ωcm, HTS-2 7.21Ωcm 이었고, IP-1은 1.79Ωcm, IP-2는 6.83Ωcm, 마지막으로 IP-3는 9.23Ωcm 이었다. DLTS 측정 결과 IP조사공에서 새로운 피의 결을 발견할 수 있었다.

Equipment and Materials for Food Sanitation (식품의 안전성 검사기기)

  • 양재승
    • The Korean Journal of Food And Nutrition
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    • 제10권3호
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    • pp.414-421
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    • 1997
  • HACCP procedures are regarded as essential components of modern safety assurance programs for all forms of food processing and preservation, including irradiation. Control of hazards and classification of hazardous microorganisms and indicator organisms (and related tests) are helpful to establish preventive and practice regulations at each facility. A carefully conceived and well implemented system assure the safety of all products. The HACCP is designed to prevent defects, rather than to detect them as in traditional end-point testing and inspection, as controlling requirements into food formulations, processing parameters and operating practices. This article commentes on some equipments and materials for HACCP system.

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A Study on the Characteristics of TSC for BOPP Irradiatied by $Co^{60}-{\gamma}$ ray ($Co^{60}-{\gamma}$ 선으로 조사된 이축 연신된 폴리프로필렌 필름의 열자격 특성에 관한 연구)

  • Song, K.Y.;Park, S.H.;Ryu, B.H.;Hong, J.W.;Lee, J.U.;Kim, B.H.
    • Proceedings of the KIEE Conference
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    • 대한전기학회 1990년도 하계학술대회 논문집
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    • pp.195-198
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    • 1990
  • In order to investigate the radiation effects induced to electrical properties of Biaxially-Oriented Polypropylen film, several observations were carried out to the sample irradiated to various dose by $Co^{60}-{\gamma}$ ray, on the characteristics of TSC spectra measuered as a function of electric field applied to a sample of 15[ ${\mu}m$] thick. The TSC spectra observed in the temperature range of $153{\sim}403[K]$ with the electric field of intensity $10{\sim}60$ [MV/m], have shown two of the distinguished peak such as ${\beta}$, ${\alpha}$, each of which appeared at $-5{\sim}20$ [ $^{\circ}C$] and 90 [ $^{\circ}C$] respectively. As the conclusions, obtained from the studies, the origin of ${\alpha}$ peak in TSC seems to be attributed by thermal excitation of ions trapped with $0.4{\sim}0.8[eV]$ deep, at the defects formed by $Co^{60}-{\gamma}$ irradiation in a crystaline region. The origin of ${\beta}$ peak was regarded as the depolarization process of "OH" or "CO" dipole with the activation energy of $0.4{\sim}0.6[eV]$ in an amorphous region.

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Defect Analysis of Phospher (Ba, Sr) FBr : Eu by X-Ray Irradiation (X선 조사에 의해 (Ba, Sr) FBr : Eu 형광 물질에 생성되는 결함 특성)

  • Shin, Jung-Ki;Lee, Chong-Yong;Bae, Seok-Hwan;Kim, Jae-Hong;Kwon, Jun-Hyun
    • Korean Journal of Materials Research
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    • 제18권8호
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    • pp.427-431
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    • 2008
  • The mechanical property of a phosphore layer was investigated by measuring the resolution (LP/mm) and by positron annihilation spectroscopy and SEM. Image plate samples containing the phosphore layer were irradiated by X-rays in a hospital numerous times over a course of several years. The LP/mm values of a (Ba,Sr)FBr : Eu image plate irradiated by X-rays varied between 2.2 and 2.0 over a period of four years. Coincidence Doppler Broadening (CDB) positron annihilation spectroscopy was used to analyze defect structures. The S parameters of the samples from hospital use varied from 0.6219 to 0.6232. There was a positive relationship between the time of exposure to the X-rays and the S parameters. Most of the defects were found to have been generated by X-rays.

Volume Resistivity Characteristics of Low Density Polyethylene film irradiated with Electron Beam (전자선 조사된 저밀도 폴리에틸렌 박막의 체적고유저항 특성)

  • Cho, Don-Chan;Cho, Kyung-Soon;Lee, Soo-Won;Kim, Wang-Kon;Hong, Jin-Wooog
    • Proceedings of the KIEE Conference
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    • 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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    • pp.193-195
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    • 1996
  • Low-density polyethylene(LDPE ; thickness 100[${\mu}m$] as a experimental specimen is irradiated with electron beam by using electron beam accelerator, and as an experimental specimen, the nonirradiated specimen and the specimen irradiated with electron beam is produced according to the classification of dose. From the analysis of DSC, the crystalline melting point of the specimen irradiated with electron beam is lower than that of virgin specimen. It is confirmed thai the volume resistivity is increased from the temperature over $50[^{\circ}C]{\sim}60[^{\circ}C]$ to the crystalline melting point because of the defects of solid structure and the formation of many trap centers by means of electron beam irradiation, but decreased in the temperature over the crystalline melting point because of the melt of crystalline.

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