• 공업화학
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• 제10권3호
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• pp.343-348
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• 1999

저온 공정이 가능한 rf-plasma를 이용한 화학증착법으로 기판의 온도, 출력, $SiH_4$와 천음 함유한 유기화합불 진구체의 희석비 등을 변수로 각 실험 조건에 따라 iron silicide를 제조하였다. 일반적으로 iron silicide 막은 다단계 공정의 Ion Beam Synthesis (IBS)법으로 성장시키고 있으나, 플라즈마를 사용함으로써 단일공정에 의해 $Fe_aSi_bC_cH_d$로 결합된 iron silicide 및 ${\beta}$-상이 형성될 수 있음을 확인하였다. 철 전구체와 실란 (silane)의 희석비에 따라 막 내에 존재하는 탄소와 수소양의 차이로 인해 서로 다른 막의 특성을 나타내었다. 기관의 온도에 따른 광학에너지갭 ($E_b^{opt}$)은 박 표면에 존재하는 수소가 탈착되면서 제공할 수 있는 활성점이 한정되어 있기 때문에 큰 변화가 없었다. 240 watt 이하의 출력에서는 광학에너지갭이 감소하였고, 240 watt 이상의 높은 출력에서는 식각에 의해 미결합수가 증가하여 광학에너지갭은 높게 나타났다.

• 한국재료학회지
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• 제11권12호
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• pp.1068-1073
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• 2001

An n-type iron$silicide(Fe_{0.98}Co_{0.02}Si_2)$has been produced by mechanical alloying process and consolidated by vacuum hot pressing. Although as-milled powders after 120 hours of milling did not show an alloying progress,${\beta}-FeSi_2$phase transformation was induced by isothermal annealing at$830{\circ}C$for 1 hour, and the fully transformed${\beta}-FeSi_2$phase was obtained after 4 hours of annealing. Near fully dense specimen was obtained after vacuum hot pressing at$ 1100{\circ}C$with a stress of 60MPa. However, as-consolidated iron silicides were consisted of untransformed mixture of ${\Alpha}-Fe_2Si_5$and ${\varepsilon-FeSi$phases. Thus, isothermal annealing has been carried out to induce the transformation to a thermoelectric semiconducting${\beta}-FeSi_2$phase. The condition for${\beta}-FeSi_2$transformation was investigated by utilizing DTA, SEM, and XRD analysis. The phase transformation was shown to be taken place by a vacuum isothermal annealing at$830{\circ}C$and the transformation behaviour was investigated as a function of annealing time. The mechanical properties of${\beta}-FeSi_2$materials before and after isothermal annealing were characterized in this study.

• 한국재료학회지
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• 제11권2호
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• pp.132-136
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• 2001

기계적 합금화 공정을 이용하여 열전재료$FeSi_2$분말을 제조하여 열간압축법을 사용하여 성형하였다. 열간압축 성형된 $FeSi_2$는 열전특성을 나타내는 $\beta$-$FeSi_2$ 상 및 상변태가 완료되지 않은 $\alpha$-$Fe_2$$Si_{5}$와 $\varepsilon$-FeSi의 혼합상으로 이루어져 있음이 확인되었다. 열전재료로의 $\beta$-$FeSi_2$ 상변태 유도를 위해 항온열처리를 행하여 상변태 조건을 조사하였다. SEM, TEM, XRD, DTA 등을 이용하여 상변태 거동을 분석한 결과, $830^{\circ}C$에서 24시간 진공 항온열처리 후 단상의 $\beta$-FeSi$_2$ 상을 얻을 수 있었다. 항온열처리 전의 열간압축 성형체와 상변태가 완료된 $\beta$-FeSi$_2$의 기계적 성질과 열전 특성을 측정하여 비교 분석하였다.

• 공업화학
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• 제10권1호
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• pp.105-111
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• 1999

현재 iron silicide막을 제작하고 있는 방법은 열처리를 수행함으로써 막의 계면 상태가 좋지 않으나 플라즈마를 이용하였을 때는 열처리를 수행하지 않으므로 양질의 막을 얻을 수 있다. 본 실험에서 제작된 막은 Raman 스펙트럼 $250cm^{-1}$에서 나타난 Fe와 Si의 진동모드와 FT-IR에 의해 유기화합물 뿐만 아니라 Fe-Si의 결합이 형성되었음을 확인하였다. 또한 플라즈마의 높은 에너지에 의해 낮은 기판 온도에서 에피택시 성장이 진행되는 동안 iron silicide는 [220]/[202], [115] 등과 같은 격자구조를 갖는 ${\beta}$-상으로 성장하였다. 제조된 막의 band gap은 1.182~1.174 eV의 값을 가지고, 광학적 에너지갭을 3.4~3.7 eV의 값을 나타내었다. 막 내의 유기화합물에 의해 유발되는 Urbach tail과 sub-band-gap 흡수가 관측되었다. 따라서 플라즈마를 이용하여 제작된 막은 단일결정이 성장되어 양질의 박막을 얻을 수 있음을 확인하였다.

• 환경위생공학
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• 제15권2호
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• pp.102-111
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• 2000

As IR-sensor for detecting pollution material, the iron silicide has a fit band gap, high physicochemical stability at high temperature and good acid resistance. The growing film was formed with the Fe-Si bond and the organic compound because plasma resolved the injected precursors into various active species. In the Raman scattering spectrum, the Fe-Si vibration mode showed at 250 {TEX}$cm^{-1}${/TEX}. The FT-IR peak indicated that the various organic compounds were deposited on the films. The iron silicide was epitaxially grown to β-phase by the high energy of plasma. The lattice structure of films had [220]/[202] and [115]. The thickness of the films increased with the flow rate of silane. But rf-power increased with decreasing the thickness. The optical gap energy and the band gap were shown about 3.8 eV and 1.182∼1.194 eV. The band gap linearly increased and the formula was below: {TEX}$E_g^{dir}${/TEX}= 8.611×{TEX}$10^{-3}N_{D}${/TEX}＋1.1775

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제22회 학술발표회 초록집
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• pp.134-134
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• 2002

• 한국재료학회지
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• 제15권5호
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• pp.301-305
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• 2005

We fabricated nickel silicide layers on whole non-patterned wafers from $p-Si(100)SiO_2(200nm)$/poly-Si(70 nm)mn(40 nm) structure by 40 sec rapid thermal annealing of $500\~900^{\circ}C$. The sheet resistance, cross-sectional microstructure, surface roughness, and phase analysis were investigated by a four point probe, a field emission scanning electron microscope, a scanning probe microscope, and an X-ray diffractometer, respectively. Sheet resistance was as small as $7\Omega/sq$. even at the elevated temperature of $900^{\circ}C$. The silicide thickness and surface roughness increased as silicidation temperature increased. We confirmed the nickel silicides iron thin nickel/poly-silicon structures would be a mixture of NiSi and $NiSi_2$ even at the $NiSi_2$ stable temperature region.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.179-179
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• 2002

• Bulletin of the Korean Chemical Society
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• 제33권9호
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• pp.2830-2844
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• 2012

This review covers recent developments in our group regarding the synthesis, characterization and applications of single-crystalline one-dimensional nanostructures based on a wide range of material systems including noble metals, metal silicides and metal germanides. For the single-crystalline one-dimensional nanostructures growth, we have employed chemical vapor transport approach without using any catalysts, capping reagents, and templates because of its simplicity and wide applicability. Au, Pd, and Pt nanowires are epitaxially grown on various substrates, in which the nanowires grow from seed crystals by the correlations of the geometry and orientation of seed crystals with those of as-grown nanowires. We also present the synthesis of numerous metal silicide and germanide 1D nanostructures. By simply varying reaction conditions, furthermore, nanowires of metastable phase, such as $Fe_5Si_3$ and $Co_3Si$, and composition tuned cobalt silicides (CoSi, $Co_2Si$, $Co_3Si$) and iron germanides ($Fe_{1.3}Ge$ and $Fe_3Ge$) nanowires are synthesized. Such developments can be utilized as advanced platforms or building blocks for a wide range of applications such as plasmonics, sensings, nanoelectronics, and spintronics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.173-173
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• 2000

Multilayered films (MLF) consisting of transition metals and semiconductors have drawn a great deal of interest because of their unique properties and potential technological applications. Fe/Si MLF are a particular topic of research due to their interesting antiferromagnetic coupling behavior. although a number of experimental works have been done to understand the mechanism of the interlayer coupling in this system, the results are controversial and it is not yet well understood how the formation of an iron silicide in the spacer layers affects the coupling. The interpretation of the coupling data had been hampered by the lack of knowledge about the intermixed iron silicide layer which has been variously hypothesized to be a metallic compound in the B2 structure or a semiconductor in the more complex B20 structure. It is well known that both magneto-optical (MO0 and optical properties of a metal depend strongly on their electronic structure that is also correlated with the atomic and chemical ordering. In order to understand the structure and physical properties of the interfacial regions, Fe/Si multilayers with very thin sublayers were investigated by the MO and optical spectroscopies. The Fe/si MLF were prepared by rf-sputtering onto glass substrates at room temperature with a totall thickness of about 100nm. The thicknesses of Fe and Si sublayers were varied from 0.3 to 0.8 nm. In order to understand the fully intermixed state, the MLF were also annealed at various temperatures. The structure and magnetic properties of Fe/Si MLF were investigated by x-ray diffraction and vibrating sample magnertometer, respectively. The MO and optical properties were measured at toom temperature in the 1.0-4.7 eV energy range. The results were analyzed in connection with the MO and optical properties of bulk and thin-film silicides with various structures and stoichiometries.