• 한국광학회지
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• 제8권4호
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• pp.291-296
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• 1997

Slot형의 구리 이온 레이저를 제작하여, 780 nm 레이저 동작을 위한 장치구조의 안정성과 특성을 조사했다. 구리 이온 레이저의 최대 출력을 다양한 동작조건 범위에서 측정했다. IR-레이저의 출력은 음극의 기하학적 구조, 방전전압, 그리고 기체압력에 주로 의존했다. 네온의 부분압력이 60%에 이르면 출력이 감소하였으며, 그 이유 중에 하나는 높은 레이저 준위의 Population이 감소했기 때문이다. 파장 780 nm는 레이저 전이가 구리 이온의 5p 준위에서 일어난다. 통형음극을 사용하는 본 실험의 레이저 장치는 헬륨과 네온 흡합기체 방전에서 동작되고, 100시간 동안의 방전시간 후에 출력감소가 35%이었다(활성길이 9.6cm에 대한 출력은 2.8 mW).

• Journal of Welding and Joining
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• 제23권4호
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• pp.53-58
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• 2005

We designed a weld monitoring system with UV and IR sensors using a embedded DSP controller for implementing a distribution system; running stand alone and communication with outside by industrial standard protocols. Also this system provided a USB port in order to be acquiring data in PC. The user interface program in PC visualized the IR and W data in time, frequency and state space. A correlation of IR and UV signals showed closely related to weld quality. A rapid change of geometry can be found through a moving average filter. And the average value of IR signal at an interval represented a welding width and depth. Through these results, we proposed a monitoring algorithm for a integer type DSP.

• 연구논문집
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• 통권30호
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• pp.43-56
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• 2000

N-IR spectroscopy technology is very useful. And, the technology has wide application range. In the range, we know that single beam type silica analyzer has some handicap. So we were studied Splitted beam type silica analyzer. This dissertation have been discuss about system structure, system fundamentals and performance test. At the test, we were study in the spectral interference of NH3. We know that existing system had some problem. It is structural frailties of single beam type. Therefore we were study for Splitted beam type structure. And we obtain a good result. We have $\pm$5% accuracy and 0.5 ppb level measuring range. But, we have a question. It is ppt level measuring technology by the laser beam spectroscopy.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.20-23
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• 2009

The efficacy improvement issues in a unit discharge cell have been approached from the structural considerations. The tested cell designs include (a) a coplanar type with annular auxiliary electrode buried in barrier ribs, (b) a coplanar type with split auxiliary electrodes also burred in barrier ribs and (c) a coaxial type with a floating electrode stacked on the base electrode. From spatiotemporally resolved optical images of near-IR emission taken by a gated-ICCD camera and relative VUV emission intensity estimated by laser absorption spectroscopy, the differences in the discharge and light emission performances of those three cell types have been compared and discussed.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2016년도 추계학술대회 논문집
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• pp.134-134
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• 2016

The effect of different thermal treatments on the sub-50 nm copper nanoparticles is examined in the aspects of chemical, electrical and surface morphology. The copper nanoparticles are chemically synthesized and fabricated for paste-type solution. Simple bar coating method is practiced as a deposition process to form copper thin film on a typical slide glass. Deposited copper thin films are annealed by two different routes: general tube furnace with 99.99 % Ar atmosphere and selective laser sintering process. The thermal behavior of the different thermal-treated copper thin films is compared by SEM, XRD, FT-IR and XPS analysis. In this study, the laser sintering process ensures low annealing temperature, fast working speed and ambient-accessible route. Moreover, the laser-sintered copper thin film shows good electrical property and enhanced chemical stability than conventional thermal annealing process. Consequently, the proposed laser sintering process can be compatible with plastic substrate for flexible applications.

• 한국전기전자재료학회논문지
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• 제35권2호
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• pp.149-154
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• 2022

In this paper, laser-induced fluorescence properties of four plastics were characterized through spectrometer analysis for real-time microplastic counting. Recently, environmental problems related to microplastics have emerged. In order to detect microplastics, analysis methods such as FT-IR and Raman are used. However, they have the disadvantages of being time-consuming and requiring a pretreatment process. In most plastic products on the market, 10% to 30% of plasticizers and reinforcing agents are added. Therefore, most microplastics present in seawater and freshwater emit fluorescence signals by 270 nm UV light source regardless of their type due to their molecular structure due to additives. Real-time microplastics counting is possible more easily by using the proposed laser-induced fluorescence detection method because of the fluorescence expression characteristic of 340 nm that appears due to the plasticizer of plastics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.52-52
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• 2010

본 연구에서 우리는 HPHT 처리 전 FT-IR spectrometer를 이용한 사전분석을 통해 type Ia brown 다이아몬드를 IaA, IaB, IaAB (A>B), IaAB (A=B), IaAB (A$1700-1800^{\circ}C$, 5 GPa에서 다이아몬드가 흑연화 되지 않는 범위 하에 HPHT처리를 시행하였다. 자외선-가시광선 분광분석기(UV-Vis Spectrometer, Shimadzu UV 3101PC)를 사용하여 350~800 nm에서의 가시광선 범위를 0.1nm의 분해능으로 투과(Transmittance) 모드로 측정하였고, 퓨리에 변환 적외선 분광분석기(FT-IR spectrometer, Jasco-4100)을 사용하여 $400{\sim}6000cm^{-1}$의 범위에서 $4cm^{-1}$ 의 분해능으로 흡수(Absorption) 모드로 측정한 후 HPHT 처리 전후를 비교 분석하였다. 또한 광루미네선스(Photoluminescence) 분석은 325 nm He-Cd laser를 광원으로 한(PL, Spectra-pro 2150i, Spectra-pro 2300i micro-spectrometer) 및 532 nm green laser를 광원으로 한(PL, SAS 2000)를 사용하여 각각 350~600 nm, 550~1100 nm의 범위에서 0.1nm step으로 측정하여 HPHT 처리전과 후를 비교 분석하였다. HPHT처리 후 모든 시료는 N3 center (415.4 nm), H4 center (496.4nm) 및 platelet와 연관된 ($1363\;cm^{-1}$)의 peak가 감소하였고, H3 center (503.2 nm)와 G-band가 증가하는 경향을 나타내었다. 또한 HPHT 처리 시 질소의 B집합보다 A집합이 더 감소하는 경향을 나타내었으며, A 또는 B집합의 파괴에서 발생된 질소 원자에 의해 질소의 interstitial center (594 nm)가 증가함을 알 수 있었다. HPHT 처리 후 모든 시료는 (N-V)- center가 생성됨을 확인 할 수 있었다. 결론적으로 본 연구를 통해 HPHT 처리를 통해 다이아몬드 내에 존재하는 질소결합관련 상태의 변화를 확인할 수 있었다.

• Current Optics and Photonics
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• 제7권6호
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• pp.738-744
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• 2023

Graphene-based saturable absorbers (SAs) are widely used as laser mode-lockers at various laser oscillators. In particular, transmission-type graphene-SAs with ultrabroad spectral coverage are typically manufactured on transparent substrates with low nonlinearity to minimize the effects on the oscillators. Here, we developed two types of transmitting graphene SAs based on CaF₂ and ZnSe. Using the graphene-SA based on CaF₂, a passively mode-locked mid-infrared Cr:ZnS laser delivers relatively long 540 fs pulses with a maximum output power of up to 760 mW. In the negative net cavity dispersion regime, the pulse width was not reduced further by inhomogeneous group delay dispersion (GDD) compensation. In the same laser cavity, we replaced only the graphene-SA based on CaF₂ with the SA based on ZnSe. Due to the additional self-phase modulation effect induced by the ZnSe substrate with high nonlinearity, the stably mode-locked Cr:ZnS laser produced Fourier transform-limited ~130 fs near 2,340 nm. In the stable single-pulse operation regime, average output powers up to 635 mW at 234 MHz repetition rates were achieved. To our knowledge, this is the first attempt to achieve shorter pulse widths from a polycrystalline Cr:ZnS laser by utilizing the graphene deposited on the substrate with high nonlinearity.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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• pp.85-87
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• 1990

Silicon nitride film was deposited on a silicon wafer using a laser CVD(LCVD) technique, which is based on direct photolysis of $SiH_4/NH_3$ gas mixture by ArF laser beam(${\lambda}=193\;nm$). The refractive index of deposited SiN film is 1.9 at the temperature of $300^{\circ}C$, pressure of 5 torr. The breakdown field strength of LCVD SiN film was 10MV/cm. In IR spectrum, the absorption peak of Si-H, N-H, and Si-N is detected and it is shown that hydrogen is included in SiN film. From analysis of absorption band. it is calculated that density of Si-H, N-H bond is higher than $5{\times}10^{22}cm^{-3}$. LCVD MIS capacitor and PECVD MIS capacitor have injection-type hysteresis but it is known that hysteresis loss of LCVD MIS capacitor is smaller than that of PECVD MIS capacitor. It means that Interface state density of LCVD capacitor is smaller than that of PECVD capacitor. In addition, the flatband voltage($V_{FB}$) of LCVD is smaller than that of PECVD capacitor. And it means that fixed charged density($Q_{FIX}$) of LCVD capacitor is smaller than that of PECVD MIS capacitor.

• 한국광학회지
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• 제6권2호
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• pp.165-171
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• 1995

Infrared-Radio frequency double resonance (IRRFDR) and Infrared-Microwave double resonance (IRMWDR) spectroscopy have been used to probe a level of A symmetry for $CD_{3}$OH. Double resonance spectra of $CD_{3}$OH have been investigated over the range of 940 to 1020 $cm ^{-1}$ . Twenty K-type doublet transitions have been observed in both the radio frequency region, which covers 50 MHz to 1 GHz, and the microwave region, which covers 8 GHz to 12 GHz. The results propose new assignments of infrared (IR) absorption transitions and far-infrared (FIR) laser emission lines. These involve torsional excited levels and CO stretch states. Measurements of the A state splitting have permitted the determination of the asymmetry splitting parameters $S^{o}$(n, K) and $^{co}$ (n, K) for (n, K)=(0.3) and (1.3)