• Title/Summary/Keyword: Ionzation

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Paint Spray Mass Spectrometry for the Detection of Additives from Polymers on Conducting Surfaces

  • Paine, Martin R.L.;Barker, Philip J.;Blanksby, Stephen J.
    • Mass Spectrometry Letters
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    • v.3 no.1
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    • pp.25-28
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    • 2012
  • Paint Spray is developed as a direct sampling ionisation method for mass spectrometric analysis of additives in polymer-based surface coatings. The technique simply involves applying an external high voltage (5 kV) to the wetted sample placed in front of the mass spectrometer inlet and represents a much simpler ionisation technique compared to those currently available. The capabilities of Paint Spray are demonstrated herein with the detection of four commercially available hindered amine light stabilisers; TINUVIN${(R)}$770, TINUVIN${(R)}$292, TINUVIN${(R)}$123 and TINUVIN${(R)}$152 directly from thermoset polyester-based coil coatings. Paint Spray requires no sample preparation or pre-treatment and combined with its simplicity requiring no specialised equipment makes it ideal for use by non-specialists. The application of Paint Spray for industrial use has significant potential as sample collection from a coil coating production line and Paint Spray ionisation could enable fast quality control screening at high sensitivity.

Impact ionization rate of the highly-doped AlGaAs/GaAs quantum well (고준위 도핑된 AlGaAs/GaAs 양자 우물의 충돌 이온화율)

  • 윤기정;황성범;송정근;홍창희
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.4
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    • pp.121-128
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    • 1996
  • The impact ionization rate of thethighly-doped AlGaAs/GaAs quantum well structure is calculated, which is an important parameter ot design theinfrared detector APD and the novel neural device. In conjunction with ensemble monte carlo method and quantum mechanical treatment, we analyze the effects of the parameters of quantum well structure on the impact ionization rate. Since the number of the occupied subbands increases while the energy of the subbands decreases as the width of quantum well increases, the impact ionization rate increases in the range of th esmall well width but gradually the increament slows down and is finally saturated. Due to the effect of the energy of the injected electrons into the quantum well and the tunneling through the barrier, the impact ionization rate increases for the range of the small barrier width and decreases for the range of the large barrier width. Thus, there exists a barrier width to maximize the impact ionzation rate for a mole fraction x, and the barrier width moves to the larger vaue as the mole fraction x increases. The impact ionization rate is much more sensitive to the variation of the doping density than that of the other quantum well parameters. We found that there is a limit of the doping density to confine the electronics in the quantum well effectively.

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