• Korean Membrane Journal
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• v.9 no.1
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• pp.34-42
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• 2007

A perovskite-type ($La_{0.6}Sr_{0.4}Ti_{0.2}Fe_{0.8}O_{3-{\delta}}$) dense ceramic membrane was prepared by polymerized complex method, using citric acid as a chelating agent and ethylene glycol as an organic stabilizer. Effect of Ti addition on lanthanum-strontium ferrite mixed conductor was investigated by evaluating the thermal expansion coefficient, the oxygen flux, the electrical conductivity, and the phase stability. The thermal expansion coefficient in air was $21.19\;{\times}\;10^{-6}/K$ at 473 to 1,223 K. At the oxygen partial pressure of 0.21 atm ($20%\;O_2$), the electrical conductivity increased with temperature and then decreased after 973 K. The decrement in electrical conductivity at high temperatures was explained by a loss of the lattice oxygen. The oxygen flux increased with temperature and was $0.17\;mL/cm^2{\cdot}min$ at 1,223 K. From the temperature-dependent oxygen flux data, the activation energy of oxygen ion conduction was calculated and was 80.5 kJ/mol at 1,073 to 1,223 K. Also, the Ti-added lanthanum-strontium ferrite mixed conductor was structurally and chemically stable after 450 hours long-term test at 1,173 K.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.125-128
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• 2007

The influence of Co substitution in B-site at perovskite PSCF($Pr_{0.3}Sr_{0.7}CO_{x}Fe_{(1-x)}O_{3}$) was investigated in this study. The PSCF series exhibits excellent MIEC(mixed ionic electronic conductor) properties. ASR(area specific resistance) of PSCF3737 was 0.137 ${\Omega}{\cdot}cm^{2}$ at $700^{\circ}C$. The activation energy of PSCF3737 was also lower than other compositions of PSCF. ASR of PSCF3737 was analysed as two parts at different part of frequency region. Responses at middle frequency part (${\sim}10^2$ Hz) were concerned with oxygen reduction reaction and those at low frequency part (${\sim}10^{-1}$ Hz) were related with oxygen diffusion.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.133-136
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• 2007

Perovskite-structured samarium strontium cobaltite (SSC), which is mixed ionic electronic conductor (MIEC), is considered as a promising cathode material for intermediate temperature-operating solid oxide fuel cell (SOFC) due to its high electrocatalytic property. Cathode material containing cobalt (Co) is unstable at high temperature and has a relatively high thermal expansion property. In this paper, Sm-Sr-(Co,Fe,Ni)-O system with perovskite and spinel structures was investigated in terms of electrochemical property and thermal expansion property, respectively. Area specific resistance (ASR) was measured by ac impedance spectroscopy to investigate the electrochemical property of cathode, and thermal expansion coefficient (TEC) was measured by using dilatometer. Micro structure of cathode was observed by scanning electron microscopy. Perovskite-structured $Sm_{0.5}Sr_{0.5}CoO_{3-\delta}$ showed the ASR of $0.87{\Omega}/cm^{2}$, and $Sm_{0.5}Sr_{0.5}NiO_{3-\delta}$, which actually has a spinel structure, showed the lowest TEC value of $13.3{\times}10^{-6}/K$.

• Journal of the Korean Ceramic Society
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• v.44 no.4 s.299
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• pp.214-218
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• 2007

The decrease of polarization resistance in cathode is the key point for operating at intermediate temperature SOFC (solid oxide fuel cell). In this study, the influence of Co substitution in B-site at complex perovskite on the electronic conductivity of PSCM ($Pr_{0.3}Sr_{0.7}Co_xMn_{(1-x)}$) was investigated. The PSCM series exhibits excellent MIEC (mixed ionic electronic conductor) properties. The ASR (area specific resistance) of PSCM3773 was $0.174{\Omega}{\cdot}cm^2\;at\;700^{\circ}C$. The activation energy of PSCM3773 was also lower than other compositions of PSCM. The TEC(thermal expansion coefficient) was decreased by addition of Mn. The ASR values were increased gradually during the thermal cycling test of PSCM37773 due to the delamination between electrolyte and cathode materials. The delamination was caused by the difference of TEC.

• Journal of the Korean Ceramic Society
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• v.45 no.11
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• pp.694-700
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• 2008

Proton conducting oxides based on the $BaCe_{0.9}M_{0.1}O_{3-{\delta}}$ (M = La, AL) were tested for the alternative electrolyte materials of fuel cell. The power density for single cell of Air |Pt| $BaCe_{0.9}M_{0.1}O_{3-{\delta}}$ |Pt| $H_2(3%H_2O)$ system was maximum $0.04W/cm^2$ at $1000^{\circ}C$. In this system, proton transport number was proved to depend on the lattice parameters and the distortion of $CeO_6$ octahedral as a function of the ionic radii of acceptor ions. This proton conducting oxide system requires developing the new electrode materials for application.

• Journal of the Korean Ceramic Society
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• v.53 no.6
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• pp.635-640
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• 2016

Electrical behavior of AlN ceramics sintered with $Y_2O_3$ as a sintering aid has been investigated with respect to additional $TiO_2$ dopant. From the impedance spectroscopy, it was found that the grain and grain boundary conductivities have greatly decreased with addition of $TiO_2$ dopant. The $TiO_2$ dopant also increased the activation energy of the grain conductivity by about 0.37 eV; this increase was attributed to the formation of an associate between Al vacancies and Ti ions at the Al sites. Similarly, the electronic conductivity was reduced by $TiO_2$ addition. However, $TiO_2$ solubility in AlN grains was below the detection limit of typical EDX analysis. Grain boundary was clean, without liquid films, but did show yttrium segregation. The transference number of ions was close to 1, showing that AlN is a predominantly ionic conductor. Based on the observed results, the implications of using AlN applications as insulators have been discussed.

• Journal of the Korean Ceramic Society
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• v.39 no.10
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• pp.994-1000
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• 2002

Oxygen permeability and the mechanical properties of mixed ionic-electronic conductive $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-{\delta}}$ perovskite-type membrane, fabricated by solid state reaction, were investigated with regard to microstructure. The microstructure of the membrane was controlled by changing the sintering temperature and holding time. The average grain size and relative density were evaluated as a function of sintering conditions. As the fraction of grain boundary decreased, oxygen permeability showed a tendency to increase. Especially the maximum oxygen flux of 0.37 ml/$cm^2$${\cdot}$min was measured for the specimen sintered at 1300${\circ}C$ for 10 h, which has high density and relatively large grain size. Fracture strength was dependent on the relative density of sintered body, while fracture toughness increased with average grain size.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.6
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• pp.709-714
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• 2018

This study researched the reasons for changing polarity in accordance with junction properties in an interface of semiconductors. The contact properties of semiconductors are related to the effect of the semiconductor's device. Therefore, it is an important factor for understanding the junction characteristics in the semiconductor to increase the efficiency of devices. For generation of various junction properties, carbon-doped silicon oxide (SiOC) was deposited with various argon (Ar) gas flow rates, and the characteristics of the SiOC was varied based on the polarity in accordance with the Ar gas flows. Tin-doped zinc oxide (ZTO) as the conductor was deposited on the SiOC as an insulator to research the conductivity. The properties of the SiOC were determined from the formation of a depletion layer by the ionization reaction with various Ar gas flow rates due to the plasma energy. Schottky contact was good in the condition of the depletion layer, with a high potential barrier between the silicon (Si) wafer and the SiOC. The rate of ionization reactions increased when increasing the Ar gas flow rate, and then the potential barrier of the depletion layer was also increased owing to deficient ions from electron-hole recombination at the junction. The dielectric properties of the depletion layer changed to the properties of an insulator, which is favorable for Schottky contact. When the ZTO was deposited on the SiOC with Schottky contact, the stability of the ZTO was improved by the ionic recombination at the interface between the SiOC and the ZTO. The conductivity of ZTO/SiOC was also increased on SiOC film with ideal Schottky contact, in spite of the decreasing charge carriers. It increases the demand on the Schottky contact to improve the thin semiconductor device, and this study confirmed a high-performance device owing to Schottky contact in a low current system. Finally, the amount of current increased in the device owing to ideal Schottky contact.

• Applied Chemistry for Engineering
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• v.16 no.5
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• pp.648-652
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• 2005

A super ionic conductor, $K^+$-beta-aluminas, which is known to be difficult to obtain in the form of dense sintered density under atmospheric pressure, was pulverized to 350 nm mean particle size using attrition mill. The sample were pressed into tablet form by uniaxial pressing. The specimen was sintered under atmospheric pressure in powder form. Sintering temperature range was $1400^{\circ}C$ to $1650^{\circ}C$ at $50^{\circ}C$ intervals. Additionally, zone sintering was carried out to control the growth grain at high temperature ($1600^{\circ}C$). The density of specimens that were sintered at $1600^{\circ}C$ and $1650^{\circ}C$, and sintered at $1600^{\circ}C$ by zone sintering were about 93% and 95%, respectively. In the case of the lengthened sintering time to 2 h, the density of specimen was reduced to lower than 90%, since the particles were grown to the duplex microstructure.