• The Korean Journal of Zoology
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• v.39 no.3
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• pp.307-316
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• 1996

A persistent major haemolyruph protein (MHP) was confirmed, and its ontogeny and physicochemical charadedstics were investigated in Helicoverpa assulta. The MHP existed continually during larval-pupal-adult development, and its ontogeny was similar to that of total haemolymph protein concentration during development. Its content increased with larval growth, and kept to high level during pupal-adult development except for temporary decrease at the early pupal and adult stages. The MHP was purified by ammonium sulfate precipitation, gel filtration and ion exchange chromatography. The purified MHP was determined to be hexamer glycolipoprotein (pI 5.9, M.W. 414kDa) consisted of single type subunit (69kDa). Amino acid analysis suggested that the MHP contained a relatively high content of aromatic amino acids (18.27 mole % of tryptophan, 7.47 mole % of tyrosine and 6.51 mole % of phenylalanine) compared to storage proteins from other insects. Immunodiffusion test and electrophoretic analysis of the organ proteins (gut, fat body, and Malphigian tubule) suggested that the major haemolymph protein was present in the fat body.

• The Transactions of the Korean Institute of Power Electronics
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• v.25 no.4
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• pp.251-260
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• 2020

A growing interest has emerged in recycling used automobile batteries into energy storage systems (ESSs) to prevent their harmful effects to the environment from improper disposal and to recycle such resources. To transform used batteries into ESSs, composing battery modules with similar performance by grading them is crucial. Imbalance among battery modules degrades the performance of an entire system. Thus, the selection of modules with similar performance and remaining life is the first prerequisite in the reuse of used batteries. In this study, we develop an instrument to measure the impedance spectrum of a battery module to predict the useful remaining life of the used battery. The developed hardware and software are used to apply the AC perturbation to the used battery module and measure its impedance spectrum. The developed instrument can measure the impedance spectrum of the battery module from 0.1 Hz to 1 kHz and calculate the equivalent circuit parameters through curve fitting. The performance of the developed instrument is verified by comparing the measured impedance spectra with those obtained by a commercial equipment.

• Polymer(Korea)
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• v.24 no.2
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• pp.228-236
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• 2000

The preparation of organophilic clay from Na$^{+}$-MMT was achieved by intercalation of alkylammonium bromide. The dispersed organophilic clay in NMP was then added to the solution of polyamic acids (BPDA-PPD, BTDA-ODA/ MPD) in NMP. After curing at 30$0^{\circ}C$, thin films of the polyimide/clay nanocomposite were prepared. The results of X-ray diffraction (XRD) shelved that the d-spacings of dried polyamic acid (PAA)-clay complexes increased in proportion to the chain length of the onium ion and patterns of two kinds of PAA-clay complexes were similar. The d-spacings of approximately 13.2 $\AA$ for the polyimide/clay nanocomposites were independent of the initial onium ion chain length and the species of PAA. From the study of XRD and transmission electron microscopy (TEM), we found layered silicates were dispersed in polyimide matrix and the resultants were intercalated nanocomposites. TGA result showed thermal stability of polyimide nanocomposite improved a little more than the pure polyimide. From the result of dynamic mechanical property, we found that the storage modulus of the nanocomposites had increased by 1.2-1.8 times of the pure polyimides.s.

• Journal of Electrochemical Science and Technology
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• v.5 no.1
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• pp.32-36
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• 2014

The $0.3Li_2MnO_3{\cdot}0.7LiMn_{0.55}Ni_{0.30}Co_{0.15}O_2$ cathode material was prepared via a co-precipitation method. The vapor grown carbon fiber (VGCF) was used as a conductive material and its effects on electrochemical properties of the $0.3Li_2MnO_3{\cdot}0.7LiMn_{0.55}Ni_{0.30}Co_{0.15}O_2$ cathode material were investigated. From the XRD pattern, the typical complex layered structure was confirmed and a solid solution between $Li_2MnO_3$ and $LiMO_2$ (M = Ni, Co and Mn) was formed without any secondary phases. The VGCF was properly distributed between cathode materials and conductive sources by a FE-SEM. In voltage profiles, the electrode with VGCF showed higher discharge capacity than the pristine electrode. At a 5C rate, 146 mAh/g was obtained compared with 232 mAh/g at initial discharge in the electrode with VGCF. Furthermore, the impedance of the electrode with VGCF did not changed much around $9-10{\Omega}$ while the pristine electrode increased from 21.5${\Omega}$ to $46.3{\Omega}$ after the $30^{th}$ charge/discharge cycling.

• Journal of the Korean Applied Science and Technology
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• v.37 no.5
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• pp.1200-1207
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• 2020

We have fabricated the supercapacitor composed of porous activated carbon, metal-organic framework (MOF) with polymer based solid state electrolyte as a "ion gel" and characterized its electrochemical behaviour as a function of the MOF contents. The electrochemical properties of the supercapacitor were analyzed via cyclic voltammetry(CV), electrochemical impedance spectroscopy(EIS) and galvanostatic charge/discharge test. As a results, the supercapacitor based on porous activated carbon/MOF composite showed the highest capacitance value at 0.5 wt% of MOF contents and decreased capacitance with increase MOF contents over the 0.5 wt%. Consequently, the porous activated carbon/MOF composite based supercapacitor is applicable to various aspect for energy storage device.

• Journal of Pharmaceutical Investigation
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• v.38 no.1
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• pp.9-14
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• 2008

Cation exchange resin complex of amlodipine free base has been investigated to improve the stability and dissolution profile. The complex was prepared by reacting amlodipine solution with activated cation exchange resin, and amlodipine content in the complex was 31.6% calculated by HPLC determination. Its product was not physical mixture but the complex formed by ionic bond, which was identified by microscope system, differential scanning calorimetry and X-ray diffractometry. Each tablet containing amlodipine free base(I) and its complex(II) was prepared for the accelerated stability test ($40^{\circ}C$, 75%RH) and dissolution test in the pH 1.2 buffer solution and purified water media. Dissolution patterns of formulation II in both media were similar to those of $Norvasc^{(R)}$ tablet, but the pattern of formulation I in purified water was different. After 6 months storage under stability test, amlodipine content of formulation I, II and $Norvasc^{(R)}$ tablet were $99.3{\pm}1.2%,\;98.9{\pm}1.4%\;and\;83.9{\pm}3.4%$, respectively. While amlodipine free base was unstable at the condition, its complex was not only significantly stable, but also similar in the dissolution pattern. These results suggest the usefulness of complex as a stable carrier for amlodipine free base.

• Applied Chemistry for Engineering
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• v.3 no.2
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• pp.349-359
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• 1992

Studies were carried out on the selective removal of inorganic salts such as NaCl and $Na_2SO_4$ from dye solution, using counter diffusion-reverse osmosis and nanofiltration, respectivey. For the dye solution used in the experiments, 1 to 30% of salts were removed by counter diffusion while the loss of dye molecules was less than 0.3%. The separation factors by one pass operation were 10-500 according to ionic species. In five successive operations, removals of anion($Cl^-$) increased but those of cation($Na^+$) decreased due to the Donnan effect. Effects of feed flow rate on removal efficiencies of various ions were also observed at constant flow rate of stripping water. Reverse osmosis of desalted dye solution by counter diffusion was conducted to prepare highly concentrated liquid dyes. The rejection efficiency of dye molecules was greater than 99%. For the rejection efficiency of chloride ion, experimental values were compared with theoretical ones based on solution-diffusion model. Two stage diafiltration was performed in nanofiltration. The rejection efficiency of chloride ion was continuously decreased due to the Donnan dialysis and even negative rejection was observed. The Donnan effect was more pronounced in the second diafiltration.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.167-167
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• 2011

Magnetic random access memory (MRAM) is one of the prospective semiconductor memories for next generation. It has the excellent features including nonvolatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM consists of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack is composed of various magnetic materials, metals, and a tunneling barrier layer. For the successful realization of high density MRAM, the etching process of magnetic materials should be developed. Among various magnetic materials, FePt has been used for pinned layer of MTJ stack. The previous etch study of FePt magnetic thin films was carried out using $CH_4/O_2/NH_3$. It reported only the etch characteristics with respect to the variation of RF bias powers. In this study, the etch characteristics of FePt thin films have been investigated using an inductively coupled plasma reactive ion etcher in various etch chemistries containing $CH_4$/Ar and $CH_4/O_2/Ar$ gas mixes. TiN thin film was employed as a hard mask. FePt thin films are etched by varying the gas concentration. The etch characteristics have been investigated in terms of etch rate, etch selectivity and etch profile. Furthermore, x-ray photoelectron spectroscopy is applied to elucidate the etch mechanism of FePt thin films in $CH_4$/Ar and $CH_4/O_2/Ar$ chemistries.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.390-390
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• 2012

Information technology industries has grown rapidly and demanded alternative memories for the next generation. The most popular random access memory, dynamic random-access memory (DRAM), has many advantages as a memory, but it could not meet the demands from the current of developed industries. One of highlighted alternative memories is magnetic random-access memory (MRAM). It has many advantages like low power consumption, huge storage, high operating speed, and non-volatile properties. MRAM consists of magnetic-tunnel-junction (MTJ) stack which is a key part of it and has various magnetic thin films like CoFeB, FePt, IrMn, and so on. Each magnetic thin film is difficult to be etched without any damages and react with chemical species in plasma. For improving the etching process, a high density plasma etching process was employed. Moreover, the previous etching gases were highly corrosive and dangerous. Therefore, the safety etching gases are needed to be developed. In this research, the etch characteristics of CoFeB magnetic thin films were studied by using an inductively coupled plasma reactive ion etching in $CH_4/O_2/Ar$ gas mixes. TiN thin films were used as a hardmask on CoFeB thin films. The concentrations of $O_2$ in $CH_4/O_2/Ar$ gas mix were varied, and then, the rf coil power, gas pressure, and dc-bias voltage. The etch rates and the selectivity were obtained by a surface profiler and the etch profiles were observed by a field emission scanning electron microscopy. X-ray photoelectron spectroscopy was employed to reveal the etch mechanism.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.387-387
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• 2013

Currently, the flash memory and the dynamic random access memory (DRAM) have been used in a variety of applications. However, the downsizing of devices and the increasing density of recording medias are now in progress. So there are many demands for development of new semiconductor memory for next generation. Magnetic random access memory (MRAM) is one of the prospective semiconductor memories with excellent features including non-volatility, fast access time, unlimited read/write endurance, low operating voltage, and high storage density. MRAM is composed of magnetic tunnel junction (MTJ) stack and complementary metal-oxide semiconductor (CMOS). The MTJ stack consists of various magnetic materials, metals, and a tunneling barrier layer. Recently, MgO thin films have attracted a great attention as the prominent candidates for a tunneling barrier layer in the MTJ stack instead of the conventional Al2O3 films, because it has low Gibbs energy, low dielectric constant and high tunneling magnetoresistance value. For the successful etching of high density MRAM, the etching characteristics of MgO thin films as a tunneling barrier layer should be developed. In this study, the etch characteristics of MgO thin films have been investigated in various gas mixes using an inductively coupled plasma reactive ion etching (ICPRIE). The Cl2/Ar, CH3OH/Ar, and CH4/Ar gas mix were employed to find an optimized etching gas for MgO thin film etching. TiN thin films were employed as a hard mask to increase the etch selectivity. The etch rates were obtained using surface profilometer and etch profiles were observed by using the field emission scanning electron microscopy (FESEM).