• Title/Summary/Keyword: Ion saturation current

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The Effect of Surface Recombination Current on the Saturation Current in Si Solar Cell (Si 태양전지(太陽電池)의 표면재결합(表面再結合) 전류(電流)가 포화전류(飽和電流)에 미치는 영향(影響))

  • Shin, Kee-Shik;Lee, Ki-Seon;Choi, Byung-Ho
    • Solar Energy
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    • v.8 no.2
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    • pp.12-18
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    • 1988
  • The effect of surface recombination current density on the saturation current density in Si solar cell has been studied. Theoretical model for surface recombination current was set up from emitter transparent model of M.A. Shibib, and saturation current of Si solar cell made by ion implantation method was also measured by digital electrometer. The theoretical surface recombination current density which is the same as saturation surface recombination current density in Shibib model was $10^{-11}[A/cm^2]$ and the measured value was ranged from $8{\times}10^{-10}$ to $2{\times}10^{-9}[A/cm^2]$. Comparing with the ideal p-n junction of Shockley, transparent emitter model shows improved result by $10^2$ order of saturation current density. But there still exists $10^2$ order of difference of saturation current density between theoretical and actual values, which are assumed to be caused by 1) leakage current through solar cell edge, 2) recombination of carriers in the depletion layer, 3) the series resistance effect and 4) the tunneling of carriers between states in the band gap.

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Simulation of a Langmuir Probe in an ECR Reactor (ECR Reactor 내의 Langmuir Probe 시뮬레이션)

  • Kim, Hoon;Porteous, Robert K.;Boswell, Rod W.
    • Proceedings of the KIEE Conference
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    • 1994.07b
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    • pp.1609-1611
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    • 1994
  • In ECR and helicon reactors for plasma processing, a high density plasma is generated in a source region which is connected to a diffusion region where the processing takes place. Large density and potential gradients can develop at the orifice of the source which drive ion currents into the diffusion region. The average ion velocity may become the order of the sound velocity. Measurements of the ion saturation current to a Langmuir probe are used as a standard method of determining the plasma density in laboratory discharges. However, the analysis becomes difficult in a steaming plasma. We have used the HAMLET plasma simulator to simulate the ion flow to a large langmuir probe in an ECR plasma. The collection surface was aligned with the Held upstream, normal to the field, and downstream. ion trajectories through the electric and magnetic fields were calculated including ion-neutral collisions. We examines the ratio of ion current density to plasma density as a function of magnetic field and pressure.

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A new Langmuir probe design to measure plasma properties and toroidal correlations on the EAST

  • Liuxin Li;Wei Zhang;Xinjun Zhang;Lunan Liu;Ning Yan;Ning Yan;Sichun Qiu;Liangliang Li;Zhengshuyan Wang;Yuhao Jiang;Chengming Qin;Ghassan Antar
    • Nuclear Engineering and Technology
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    • v.56 no.11
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    • pp.4620-4627
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    • 2024
  • We introduce a novel fast-reciprocating probe head installed on the EAST (Experiment Advanced Superconducting Tokamak) containing 12 graphite tips. This allows us to measure a variety of plasma parameters such as the plasma density, temperature, and space potential in the scrape-off layer (SOL). We will also acquire the data at high frequency thus measuring the ion saturation current, Isat, and the floating potential, Vf, average and fluctuating values. Moreover, with poloidally separated tips, we measure the poloidal electric field, Eθ, at two toroidal locations, assuming a plasma flow dominated by the E×B drift this leads to the determination of the radial velocity. As a consequence, the turbulent radial flux will thus be determined. In the parallel direction, we have four tips that are aligned parallel with the magnetic field lines, thus making an angle of 4°24' to the horizontal direction. This unique design should allow the measurement of the toroidal wavenumber, kφ, a quantity rarely obtained in tokamaks. This new probe, with 7 tips for measuring the ion saturation current and 4 tips to measure the floating potentials, was used on the EAST during the 2023 summer campaign. We present the first experimental results obtained during an L-mode plasma.

Detail relation of negative ion density with positive ion mass and sheath parameters

  • Kim, Hye-Ran;Woo, Hyun-Jong;Sun, Jong-Ho;Chung, Kyu-Sun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.470-470
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    • 2010
  • Negative ions are generated in fusion edge plasmas, material processing plasmas, ionospheric plasmas. Analytic formulas for the deduction of the absolute density of negative ions was given by using the current-voltage(IV) characteristics of two electric probes at two different pressures [1], and negative ion density has been measured by one electric probe using the current-voltage characteristics of three different pressures [2]. Ratios of ion and electron saturation currents and electron temperatures and sheath areas of different pressures are usually incorporated into two equations with two unknowns for the negative ion density. In the previous publications, the sheath factor(sheath area, sheath density, sheath velocity) and effective masses of background ions with different pressures are qualitatively incorporated for the deduction of negative density. In this presentation, the quantitative and detailed relation of negative ion density with sheath factor and effective masses are going to be given. The effect of these parameters on the change of IV characteristics will be addressed.

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Characterization of oxygen plasma by using a langmuir probe in the inductively coupled plasma (정전 탐침을 이용한 유도 결합형 반응기에서 발생하는 산소 플라즈마의 특성연구)

  • 김종식;김곤호;정태훈;염근영;권광호
    • Journal of the Korean Vacuum Society
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    • v.9 no.4
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    • pp.428-435
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    • 2000
  • Negative ion generation in an inductively coupled oxygen plasma was investigated by using a Langmuir probe. It was observed that the probe current ratio of the positive ion saturation current and the negative current which is consisted of the electron current and the negative ion current, and also the potential difference between the floating potential and plasma potential vary with the RF input power and more sensitively with the operating pressure, respectively. Results show that the operating condition to achieve the maximum probe current ratio and the minimum potential difference shift from the low pressure region to the high pressure regions with increasing the input power. It implies that the generation of the negative oxygen ions increases and the recombination of the positive and negative ions are enhanced in the plasma.

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Implementation and Performance Evaluation of Opto-Electronic OverCurrent Relay (광전자식 과전류 보호계전기의 구현 및 성능 평가)

  • Park, Byung-Seok;Ahn, Sung-Joon;Jang, Moon-Jong;Woo, Hee-Gon
    • Journal of Institute of Control, Robotics and Systems
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    • v.6 no.3
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    • pp.284-290
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    • 2000
  • The measurement of electric current using optical techniques provides a number of important practical advantages including effective isolation from high line potentials and freedom from the saturation effects observed in conventional current transformers. In this work the optical current sensor which uses thin YIG(Yittrium Ion Garnet) film as a Faraday element has been developed. We have characterized this optical current sensor and implemented it to the OOCR(Opto-electronic OverCurrent Realy) Performance of the OOCR shows the possibility of replacing the present overcurrent relays with OOCR.

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A Design of Ion-Implanted GaAs MESFET's Having High Transconductance Characteristics (이온 주입공정에 의한 고 GaAs MESFET의 설계)

  • Lee, Chang Seok;Shim, Gyu-Hwan;Park, Hyung Moo;Park, Sin-Chong
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.6
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    • pp.789-794
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    • 1986
  • The current-voltage characteristics of ion-implanted GaAs MESFET's have been simulated by using the velocity saturation model. Using this model, a MESFET with threshold voltage of -0.5V and transconductance of 460 mS/mm is designed. To implement high transconductance MESFET's, low energy ion-implantation (20 keV) and RTP(Rapid Thermal Process) activation ($575^{\circ}C$, 5sec) processes are required.

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The Effect of Ion Implantation on the Barrier Height in PtSi-nSi Schottky Diode (PtSi-nSi 쇼트키 다이오드에서 이온 주입이 장벽높이의 변화에 미치는 영향)

  • Lee, Yong Jae;Lee, Moon Key;Kim, Bong Ryul
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.5
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    • pp.712-718
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    • 1986
  • A shallow n+ layer of implanted phosphorus was used to lower the barrier height of PtSinSi schottky diodes. The reduction of barrier height of the forward turn-on voltages from 400mV to 180mV of the forward was followed by implantation of phosphorus at 35KeV with an ion dose of 8.0x10**12 atoms/cm\ulcornerand was activated at 925\ulcorner for 30min in dry O2. The test result showed that, as the ion-implanted dose increased, the forward turn-on voltage and reverse breakdown voltage were linearly decreased, but the saturation current and ideality factor(n) were linearly increased.

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A Multi-megawatt Long Pulse Ion Source of Neutral Beam Injector for the KSTAR

  • Chang, Doo-Hee;Seo, Chang-Seog;Jeong, Seung-Ho;Oh, Byung-Hoon;Lee, Kwang-Won;Kim, Jin-Choon
    • Proceedings of the Korean Nuclear Society Conference
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    • 2004.10a
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    • pp.719-720
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    • 2004
  • A multi-megawatt long pulse ion source (LPIS) of neutral beam injector was developed for the KSTAR. Beam extraction experiments of the LPIS were carried out at the neutral beam test stand (NBTS). Design requirements for the ion source were 120 kV/65 A deuterium beam and a 300 s pulse length. A maximum ion density of $9.1310^{11}$ $cm^{-3}$ was measured by using electric probes, and an optimum arc efficiency of 0.46 A/kW was estimated with ion saturation current of the probes, arc power, and total beam area. An arcing problem, caused by the structural defect of decelerating grid supporter, in the third gap was solved by the blocking of backstream ion particles, originated from the plasma in the neutralizer duct, through the unnecessary spaces on the side of grid supporter. A maximum drain power of 1.5 MW (i.e. 70 kV/21 A) with hydrogen was measured for a pulse duration of 0.5 s. Optimum beam perveance was ranged from 0.75 to 0.85. An improved design of accelerator for the effective control of beam particle trajectory should provide higher beam perveance.

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Analysis of z-axis direction of the ion saturation current to the pressure of the process gas in the ICP system (ICP system에서 공정가스와 압력에 따른 z축 방향의 이온포화 전류밀도 변화 분석)

  • Kim, Dong-Hun;Ju, Jeong-Hun;Kim, Seong-Bong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.11a
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    • pp.280-280
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    • 2015
  • 플라즈마 진단법 중 내부에 삽입하여 측정하는 단일 랭뮤어 탐침법은 플라즈마 특성을 정확하게 측정할 수 있다. 탐침에 (-)극을 걸어서 들어오는 전류를 통해서 이온포화 전류밀도를 측정할 수 있다. 본 연구에서는 유도결합플라즈마에 흐르는 가스와 압력에 따라서 변화를 확인하였다. $H_2$, Ar, $CF_4$ gas로 10 mTorr, 70 mTorr, $CF_4$ 주입위치의 조건으로 플라즈마 밀도를 구하였다.

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