• Title/Summary/Keyword: Ion recombination

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High-Dose-Rate Electron-Beam Dosimetry Using an Advanced Markus Chamber with Improved Ion-Recombination Corrections

  • Jeong, Dong Hyeok;Lee, Manwoo;Lim, Heuijin;Kang, Sang Koo;Jang, Kyoung Won
    • Progress in Medical Physics
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    • v.31 no.4
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    • pp.145-152
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    • 2020
  • Purpose: In ionization-chamber dosimetry for high-dose-rate electron beams-above 20 mGy/pulse-the ion-recombination correction methods recommended by the International Atomic Energy Agency (IAEA) and the American Association of Physicists in Medicine (AAPM) are not appropriate, because they overestimate the correction factor. In this study, we suggest a practical ion-recombination correction method, based on Boag's improved model, and apply it to reference dosimetry for electron beams of about 100 mGy/pulse generated from an electron linear accelerator (LINAC). Methods: This study employed a theoretical model of the ion-collection efficiency developed by Boag and physical parameters used by Laitano et al. We recalculated the ion-recombination correction factors using two-voltage analysis and obtained an empirical fitting formula to represent the results. Next, we compared the calculated correction factors with published results for the same calculation conditions. Additionally, we performed dosimetry for electron beams from a 6 MeV electron LINAC using an Advanced Markus® ionization chamber to determine the reference dose in water at the source-to-surface distance (SSD)=100 cm, using the correction factors obtained in this study. Results: The values of the correction factors obtained in this work are in good agreement with the published data. The measured dose-per-pulse for electron beams at the depth of maximum dose for SSD=100 cm was 115 mGy/pulse, with a standard uncertainty of 2.4%. In contrast, the ks values determined using the IAEA and AAPM methods are, respectively, 8.9% and 8.2% higher than our results. Conclusions: The new method based on Boag's improved model provides a practical method of determining the ion-recombination correction factors for high dose-per-pulse radiation beams up to about 120 mGy/pulse. This method can be applied to electron beams with even higher dose-per-pulse, subject to independent verification.

Electrochemical Impulse Oscillations at the Platinum Group Electrode Interfaces (백금족 전력 계면에서 전기화학적 Impulse 발진)

  • 전장호;손광철;라극환
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.32A no.3
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    • pp.143-151
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    • 1995
  • The electrochemical impulse oscillations of the cathodic currents at the platinum group (Pt, Pd) electrode/(0.05M KHC$_{8}H_{4}O_{4}$) buffer solution interfaces have been studied using voltammetric, chronoamperometric, and electrochemical impedance methods. The periodic impulses of the cathodic currents are the activation controlled currents due to the hydrogen evolution reaction, and depend on the fractional surface coverage of the adsorbed hydrogen intermediate and potential. The oscillatory mechanism of the cathodic current impulses is connected with the unstable steady state of negative differential resistance. The widths and periods of the cathodic current impulses are 4ms or 5ms and 152.5ms or 305ms, respectively. The H$^{+}$ discharge reaction step is 38 or 61 times faster thatn the recombination reaction steps and the H$^{+}$ mass transport processes. The atom-atom recombination reaction step is twice faster thatn the atom-ion recombination reaction step. The two kinds of active sites corresponding to the atom-atom and atom-ion recombination reaction steps exist on the platinum group electrode surfaces.

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POLARITY AND ION RECOMBINATION CORRECTION FACTORS OF A THIMBLE TYPE IONIZATION CHAMBER WITH DEPTH IN WATER IN THE MEGAVOLTAGE BEAMS

  • Kim, Seong-Hoon;Huh, Hyun-Do;Choi, Sang-Hyun;Min, Chul-Hee;Shin, Dong-Oh;Choi, Jin-Ho
    • Journal of Radiation Protection and Research
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    • v.34 no.2
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    • pp.43-48
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    • 2009
  • When the PDD (percentage depth dose) in the megavoltage beams is measured in the water phantom, the polarity and ion recombination effects of ionization chambers with depth in water are not usually taken into consideration. We try to investigate if those variations with depth should be taken into consideration or could be ignored for the thimble type semiflex ionization chamber (PTW $31010^{TM}$, SN 1551). According to the recommendation of IAEA TRS-398, the 4 representative depths of $d_s$, $d_{max}$, $d_{90}$ and $d_{50}$ were used for the electron beams. For the photon beams, the 4 depths were arbitrarily chosen for the photon beams, which were $d_s$, $d_{max}$, $d_{10}$ and $d_{20}$. For the high energy photon beam both polarity and ion recombination factors of the chamber with depth in water gives the good agreements within the maximum $\pm$0.2%, while the $C_{polS}$ with depth came within the maximum $\pm$ 0.4% and the $C_{IRS}$ within the maximum $\pm$0.6% in every electron beam used. This study shows that PDI (percentage depth ionization) could be a good approximation to PDD for the chamber used.

Three-dimensional monte carlo modeling and simulation of point defect generation and recombination during ion implantation (이온 주입 시의 점결함 발생과 재결합에 관한 3차원 몬테 카를로 모델링 및 시뮬레이션)

  • 손명식;황호정
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.34D no.5
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    • pp.32-44
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    • 1997
  • A three-dimensional (3D) full-dynamic damage model for ion implantation in crystalline silicon was proposed to calculate more accurately point defect distributions and ion-implanted concentration profiles during ion implantation process. The developed model was based on the physical monte carlo approach. This model was applied to simulate B and BF2 implantation. We compared our results for damage distributions with those of the analytical kinchin-pease approach. In our result, the point defect distributions obtained by our new model are less than those of kinchin-pease approach, and the vacancy distributions differ from the interstitial distributions. The vacancy concentrations are higher than the interstitial ones before 0.8 . Rp to the silicon surface, and after the 0.8 . Rp to the silicon bulk, the interstitial concentrations are revesrsely higher than the vacancy ones.The fully-dynamic damage model for the accumulative damage during ion implantation follows all of the trajectories of both ions and recoiled silicons and, concurrently, the cumulative damage effect on the ions and the recoiled silicons are considered dynamically by introducing the distributon probability of the point defect. In addition, the self-annealing effect of the vacancy-interstitial recombination during ion implantation at room temperature is considered, which resulted in the saturation level for the damage distribution.

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The Effect of Surface Recombination Current on the Saturation Current in Si Solar Cell (Si 태양전지(太陽電池)의 표면재결합(表面再結合) 전류(電流)가 포화전류(飽和電流)에 미치는 영향(影響))

  • Shin, Kee-Shik;Lee, Ki-Seon;Choi, Byung-Ho
    • Solar Energy
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    • v.8 no.2
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    • pp.12-18
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    • 1988
  • The effect of surface recombination current density on the saturation current density in Si solar cell has been studied. Theoretical model for surface recombination current was set up from emitter transparent model of M.A. Shibib, and saturation current of Si solar cell made by ion implantation method was also measured by digital electrometer. The theoretical surface recombination current density which is the same as saturation surface recombination current density in Shibib model was $10^{-11}[A/cm^2]$ and the measured value was ranged from $8{\times}10^{-10}$ to $2{\times}10^{-9}[A/cm^2]$. Comparing with the ideal p-n junction of Shockley, transparent emitter model shows improved result by $10^2$ order of saturation current density. But there still exists $10^2$ order of difference of saturation current density between theoretical and actual values, which are assumed to be caused by 1) leakage current through solar cell edge, 2) recombination of carriers in the depletion layer, 3) the series resistance effect and 4) the tunneling of carriers between states in the band gap.

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Dissociative Recombination Rates of O₂+ Ion with Low Energy Electrons

  • 성정희;선호성
    • Bulletin of the Korean Chemical Society
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    • v.17 no.11
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    • pp.1065-1073
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    • 1996
  • The dissociative recombination of O2+(v+)+e-→O(1S)+O(1D) has been theoretically investigated using the multichannel quantum defect theory (MQDT). Cross sections and rate coefficients at various electron energies are calculated. The resonant structures in cross section profile, which are hardly measurable in experiments, are also determined and the existence of Rydberg states is found to affect the rates. The theoretical rate coefficients are computed to be smaller than experimental ones. The reasons for this difference are explained. The two-step MQDT procedure is found to be very useful and promising in calculating the state-to-state rates of the dissociative recombination reaction which is a very important and frequently found phenomenon in Earth's ionosphere.

Determining Ion Collection Efficiency in a Liquid Ionization Chamber in Co-60 Beam (Co-60 빔에서 액체 전리함의 이온 수집 효율 결정 연구)

  • Choi, Sang Hyoun;Kim, Chan Hyeong
    • Progress in Medical Physics
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    • v.25 no.1
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    • pp.46-52
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    • 2014
  • Liquid ionization chamber is filled with liquid equivalent material unlike air filled ionization chamber. The high density material allow very small-volume chamber to be constructed that still have a sufficiently high sensitivity. However liquid ionization chamber should be considered for both initial recombination and general recombination. We, therefore, studied using the Co-60 beam as the continuous beam and the microLion chamber (PTW) for comparing the ion collection efficiency by Greening theory, two-dose rate method and our experiment method. The measurements were carried out using Theratron 780 as the cobalt machine and water phantom and 0.6 cc Farmer type ionization chamber was used with microLion chamber in same condition for measuring the charge of microLion chamber according to the dose rates. Dose rate was in 0.125~0.746 Gy/min and voltages applied to the microLion chamber were +400, +600 and +800 V. As the result, the collection efficiency by three method was generally less than 1%. In particular, our experimental collection efficiency was in good agreement within 0.3% with Greening theory except the lowest two dose rates. The collection efficiency by two-dose rate method also agreed with Greening theory generally less than 1%, but the difference was about 4% when the difference of two dose rates were lower. The ion recombination correction factors by Greening theory, two-dose rate method and our experiment were 1.0233, 1.0239 and 1.0316, respectively, in SSD 80 cm, depth 5 cm recommended by TRS-398 protocol. Therefore we confirmed that the loss by ion recombination was about 3% in this condition. We think that our experiment method for ion recombination correction will be useful tool for radiation dosimetry in continuous beam.

Measurement of Absorbed Dose at the Tissue Surface from a Plain $^{90}Sr+^{90}Y$ Beta Sources (조직 표면에서의 베타선 흡수선량 측정)

  • Hah, Suck-Ho;Kim, Jeong-Mook;Yook, Chong-Chul
    • Journal of Radiation Protection and Research
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    • v.16 no.2
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    • pp.17-26
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    • 1991
  • Beta ray $(^{90}Sr+^{90}Y)$ absorbed dose at tissue surface was measured from the distance of 30cm by use of extrapolation chamber. In the measurement, following factors were considered: effective area of collecting electrode, polarity effect, ion recombination and window attenuation. The measured absorbed dose rate at tissue surface was $1.493{\mu}Gy/sec$ with ${\pm}2.9%$.

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Use of Cylindrical Chambers as Substitutes for Parallel-Plate Chambers in Low-Energy Electron Dosimetry

  • Chun, Minsoo;An, Hyun Joon;Kang, Seong-Hee;Cho, Jin Dong;Park, Jong Min;Kim, Jung-in
    • Progress in Medical Physics
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    • v.29 no.1
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    • pp.16-22
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    • 2018
  • Current dosimetry protocols recommend the use of parallel-plate chambers in electron dosimetry because the electron fluence perturbation can be effectively minimized. However, substitutable methods to calibrate and measure the electron output and energy with the widely used cylindrical chamber should be developed in case a parallel-plate chamber is unavailable. In this study, we measured the correction factors and absolute dose-to-water of electrons with energies of 4, 6, 9, 12, 16, and 20 MeV using Farmer-type and Roos chambers by varying the dose rates according to the AAPM TG-51 protocol. The ion recombination factor and absolute dose were found to be varied across the chamber types, energy, and dose rate, and these phenomena were remarkable at a low energy (4 MeV), which was in good agreement with literature. While the ion recombination factor showed a difference across chamber types of less than 0.4%, the absolute dose differences between them were largest at 4 MeV at approximately 1.5%. We therefore found that the absolute dose with respect to the dose rate was strongly influenced by ion-collection efficiency. Although more rigorous validation with other types of chambers and protocols should be performed, the outcome of the study shows the feasibility of replacing the parallel-plate chamber with the cylindrical chamber in electron dosimetry.