• Journal of Radiation Industry
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• v.4 no.4
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• pp.335-339
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• 2010

In this study, the surface of polyimide (PI) films was modified using ion implantation to enhance its adhesion to a deposited copper (Cu) layer. The surfaces of the PI films were implanted with 150 keV $Xe^+$ ions at fluences varying from $1{\times}10^{14}$ to $1{\time}10^{16}ions\;cm^{-2}$. The Cu layers were then deposited on the implanted PI. The surface properties of the implanted PI film were investigated based on the contact angle measurements, Fourier transform infrared spectroscopy (FT-IR), X-ray photoelectron spectroscopy (XPS), and atomic force microscopy (AFM). Furthermore, the adhesive strength between the deposited Cu layer and PI film was estimated through a scratch test using a nanoindenter. As a result, the surface environment of the PI film was changed by the ion implantation, which could have a significant effect on the adhesion between the deposited Cu layer and the PI.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.5
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• pp.407-413
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• 2005

Ion implantation provides a unique way to modify the mechanical, optical and electrical properties of polymer by depositing the energy of ions in the material on the atomic scale. Implantation of ions into the polymers generally leads to a radiation damage, which, in many cases, modifies the properties of the surface and bulk of the material. These modifications result from the changes of the chemical structure caused in their turn by changing the chemical bonding when the incident ions cut the polymer chains, breaks covalent bonds, promotes cross-linking, and liberates certain volatile species. We studied the relation among the linear energy transfer (LET) and changes of surface microstructure and surface resistivity on PPS material using the high current ion implantation technology The surface resistivity of nitrogen implanted PPS decreased to $10^{7}{\Omega}/cm^{2}$ due to the chain scission, cross linking, ${\pi}$ electron creation and mobility increase. In this case, the surface conductivity depend on the 1-dimensional hopping mechanism.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.12
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• pp.750-758
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• 2016

For the channel doping of shallow junction and retrograde well formation in CMOS, indium can be implanted in silicon. The retrograde doping profiles can serve the needs of channel engineering in deep MOS devices for punch-through suppression and threshold voltage control. Indium is heavier element than B, $BF_2$ and Ga ions. It also has low coefficient of diffusion at high temperatures. Indium ions can be cause the erode of wafer surface during the implantation process due to sputtering. For the ultra shallow junction, indium ions can be implanted for p-doping in silicon. UT-MARLOWE and SRIM as Monte carlo ion-implant models have been developed for indium implantation into single crystal and amorphous silicon, respectively. An analytical tool was used to carry out for the annealing process from the extracted simulation data. For the 1D (one-dimensional) and 2D (two-dimensional) diffused profiles, the analytical model is also developed a simulation program with $C^{{+}{+}}$ code. It is very useful to simulate the indium profiles in implanted and annealed silicon autonomously. The fundamental ion-solid interactions and sputtering effects of ion implantation are discussed and explained using SRIM and T-dyn programs. The exact control of indium doping profiles can be suggested as a future technology for the extreme shallow junction in the fabrication process of integrated circuits.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.21 no.5
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• pp.34-39
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• 2022

The ion implantation technology changes the chemical state of the surface of a material by implanting ions on the surface. It improves the wear resistance, friction characteristics, etc. Plasma ion implantation can effectively reinforce a surface by implanting a sufficient amount of plasma nitrogen ions and using the injection depth instead of an ion beam. As plasma ion implantation is a three-dimensional process, it can be applied even when the surface area is large and the surface shape is complicated. Furthermore, it is less expensive than competing PVD and CVD technologies. and the material is The accommodation range for the shape and size of the plasma is extremely large. In this study, we improved wear resistance by implanting plasma nitrogen ions into a carbide end mill tool, which is frequently used in high-speed machining

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.243.1-243.1
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• 2014

For two-dimensional grid electrodes immersed in plasmas, sheath expansion due to negative high-voltage pulse applied to the electrode generates high-energy pseudowave. The high-energy pseudowave can be used as ion beam for ion implantation. To estimate ion dose due to high-energy pseudowave, investigation on sheath expansion of grid electroes is necessary. To investigate sheath expansion, an analytic model was developed by Vlasov equation and applying the 1-D sheath expansion model to 2-D. Because of lack of generalized 2-D Child-Langmuir current, model cannot give solvable equation. Instead, for a given grid electrode geometry, the model found the relations between ion distribution functions, Child-Langmuir currents, and sheath expansions. With these relations and particle-in-cell (PIC) simulations, for given grid electrode geometry, computation time was greatly reduced for various conditions such as electrode voltages, plasma densities, and ion species. The model was examined by PIC simulations and experiments, and they well agreed.

• Macromolecular Research
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• v.11 no.1
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• pp.9-13
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• 2003

Poly (vinylidene fluoride) (PVDF) samples were implanted by using high energy (MeV)F$^{2+}$ and Cl$^{2+}$ ions. We observed that AC dielectric constant of the ion-implanted PVDF samples decreased from 10.5 to 2.5 at 1 kHz as the ion dosage increased from 10$^{11}$ to 3 $\times$ 10$^{14}$ ions/$\textrm{cm}^2$. From differential scanning calorimetry experiments, we observed that PVDF samples become more disordered state through the ion implantation. The decrease of the number of bonding of C-H and C-F and the increase of unsaturated bonding were observed from X-ray photoelectron spectroscopy experiments. The emission of HF and H$_2$ molecules during the ion implantation was detected by residual gas analyzer spectrum. Based upon the results, we analyzed that the low AC dielectric constant of the MeV ion-implanted PVDF samples originated from the reduction of polarization due to the structural change of the CF$_2$ molecules in the MeV ion-implanted PVDF samples.les.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.6
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• pp.369-374
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• 2005

Nitrogen ion implantation in Nimonic 80A using plasma immersion ion implantation (PIII) was investigated at a pulse voltage of -60 kV and ion dose of $3{\times}10^{17}{\sharp}/cm^2$, $6{\times}10^{17}{\sharp}/cm^2$, $12{\times}10^{17}{\sharp}/cm^2$. PIII is an effective technology to improve the surface hardness and wear resistance of materials. And also this technology is not limited by the shape and size of materials. PIII would be a promising technique in the future. Surface hardness and wear resistance of the $N^+$ ion implanted Nimonic 80A were increased with the increase in the incident ion dose. The surface hardness of the untreated Nimonic 80A is 420 Hv, the hardness of implanted Nimonic 80A is 1050 Hv at $N^+$ ion dose of $12{\times}10^{17}{\sharp}/cm^2$. The wear loss of the untreated is 82.5 mg, the wear loss of the implanted is 0.004g at $N^+$ ion dose of $12{\times}10^{17}{\sharp}/cm^2$. The $Cr_2N$ is detected on the surface of the implanted Nimonic 80A by XRD analysis.

• Nuclear Engineering and Technology
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• v.2 no.2
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• pp.113-126
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• 1970

• Analytical Science and Technology
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• v.7 no.4
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• pp.527-540
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• 1994

The surface microstructure modification by $N^+ion$ implantation into 7050A1 alloy was investigated. Ion implantation method is to implant physically accelerated ions to the surface of a substrate. High doses of nitrogen($5{\times}10^{15}ions/cm^2$, $5{\times}10^{17}ions/cm^2$, $8{\times}10^{17}ions/cm^2$) were implanted into 7050A1 alloy using accelerating voltage of 100KeV and current density of $23.1{\mu}A/cm^2$. The implanted layers were characterized by EPMA, AES, XRD, and TEM. The experimental results were compared with computer simulation data. The results showed that AlN was formed from the surface to $4000{\AA}$ depth with Gaussian distribution and the damage region was also observed. This surface modification by $N^+ion$ implantation increased the microhardness of 7050A1 alloy surface.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.97-100
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• 2002

NaEr(WO$_4$)$_2$ is a new laser material. The planar optical waveguide was formed in NaEr(WO$_4$)$_2$ crystal by 2.6 MeV He$^{+}$ ion implantation at doses of 1.0-1.5 $\times$ 10$^{16}$ ions/cm$^2$ at room temperature. The effective refractive indices of the dark modes were measured using the prism coupling method. foul n modes and five TM modes were observed in the waveguide. The refractive index profiles were analyzed using the reflectivity calculation method (RCM). The influence of heat treatment at moderate temperature on the refractive index profiles of the waveguide was also investigated. We used the TRIM'98 (Transport of ton in Matter) code to simulate the damage profile in the NaEr(WO$_4$) crystal by 2.6 MeV He$^{+}$ion implantation which is helpful for a better understanding of the waveguide formation.ion.