• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.145-145
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• 2008

High-k materials have been paid much more attention for their characteristics with high permittivity to reduce the leakage current through the scaled gate oxide. Among the high-k materials, $ZrO_2$ is one of the most attractive ones combing such favorable properties as a high dielectric constant (k= 20 ~ 25), wide band gap (5 ~ 7 eV) as well as a close thermal expansion coefficient with Si that results in good thermal stability of the $ZrO_2$/Si structure. During the etching process, plasma etching has been widely used to define fine-line patterns, selectively remove materials over topography, planarize surfaces, and trip photoresist. About the high-k materials etching, the relation between the etch characteristics of high-k dielectric materials and plasma properties is required to be studied more to match standard processing procedure with low damaged removal process. Among several etching techniques, we chose the inductively coupled plasma (ICP) for high-density plasma, easy control of ion energy and flux, low ownership and simple structure. And the $BCl_3$ was included in the gas due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. During the etching process, the wafer surface temperature is an important parameter, until now, there is less study on temperature parameter. In this study, the etch mechanism of $ZrO_2$ thin film was investigated in function of $Cl_2$ addition to $BCl_3$/Ar gas mixture ratio, RF power and DC-bias power based on substrate temperature increased from $10^{\circ}C$ to $80^{\circ}C$. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by scanning emission spectroscope (SEM). The chemical state of film was investigated using energy dispersive X-ray (EDX).

• The Journal of Korean Academy of Prosthodontics
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• v.44 no.5
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• pp.628-641
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• 2006

Statement of problem: Dental magnetic materials have been applied to removable prosthetic appliances, maxillofacial prostheses, obturator and dental implant but they still have some problems such as low corrosion resistance in oral environments. Purpose: To increase the corrosion resistance of dental magnetic materials, surfaces of Sm-Co and Nd-Fe-B based magnetic materials were plated with TiN and sealed with stainless steels. Materials and methods : Surfaces of Sm-Co and Nd-Fe-B based magnetic materials were plated with TiN and sealed with stainless steels, and then three kinds of electrochemical corrosion test were performed in 0.9% NaCl solution; potentiodynamic, potentiostatic, and electrochemical impedance test. From this study, corrosion behavior, amount of elements released, mean average surface roughness values, the changing of retention force, and magnetic force values were measured comparing with control group of non-coated magnetic materials. Results: The values of surface roughness of TiN coated Sm-Co and TiN coated Nd-Fe-B based magnetic materials were lower than those of non coated Sm-Co and Nd-Fe-B alloy. From results of potentiodynamic test, the passive current density of TiN coated Sm-Co alloy were smaller than those of TiN coated Nd-Fe-B alloy and non coated alloys in 0.9% NaCl solution. From results of potentiostatic and electrochemical impedance test, the surface stability of the TiN coated Sm-Co alloy was more drastically increased than that of the TiN coated Nd-Fe-B alloy and non-coated alloy. The retention and magnetic force after and before corrosion test did not change in the case of TiN coated magnetic alloy sealed with stainless steel. Conclusion: It is considered that the corrosion problem and improvement for surface stability of dental magnetic materials could be solved by ion plating with TiN on the surface of dental magnetic materials and by sealing with stainless steels.

• Journal of the Korean Electrochemical Society
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• v.15 no.1
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• pp.19-26
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• 2012

SEI (solid electrolyte interphase) layers are generated on a graphite negative electrode from three different electrolytes and low-temperature ($-30^{\circ}C$) charge/discharge performance of the graphite electrode is examined. The electrolytes are prepared by adding 2 wt% of vinylene carbonate (VC) and fluoroethylene carbonate (FEC) into a standard electrolyte solution. The charge-discharge capacity of graphite electrode shows the following decreasing order; FEC-added one>standard>VC-added one. The polarization during a constant-current charging shows the reverse order. These observations illustrate that the SEI film resistance and charge transfer resistance differ according to the used additives. This feature has been confirmed by analyzing the chemical composition and thickness of three SEI layers. The SEI layer generated from the standard electrolyte is composed of polymeric carbon-oxygen species and the decomposition products ($Li_xPF_yO_z$) of lithium salt. The VC-derived surface film shows the largest resistance value even if the salt decomposition is not severe due to the presence of dense film comprising C-O species. The FEC-derived SEI layer shows the lowest resistance value as the C-O species are less populated and salt decomposition is not serious. In short, the FEC-added electrolyte generates the SEI layer of the smallest resistance to give the best low-temperature performance for the graphite negative electrode.

• Journal of the Korean Electrochemical Society
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• v.11 no.4
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• pp.284-288
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• 2008

Sn-thin film as high capacitive anode for thin film lithium-ion battery was prepared by organic-electrolyte electroplating using Sn(II) acetate. Electrolytic solution including $Li^+$ and $Sn^{2+}$ had 3 reduction peaks at cyclic voltammogram. Current peak at $2.0{\sim}2.5\;V$ region correspond to the electroplating of Sn on Ni substrate. This potential value is lower than 2.91 V vs. $Li^+/Li^{\circ}$, of the standard reduction potential of $Sn^{2+}$ under aqueous media. It is the result of high overpotential caused by high resistive organic electrolytic solution and low $Sn^{2+}$ concentration. Physical and electrochemical properties were evaluated using by XRD, FE-SEM, cyclic voltammogram and galvanostatic charge-discharge test. Crystallinity of electroplated Sn-anode on a Ni substrate could be increased through heat treatment at $150^{\circ}C$ for 2 h. Cyclic voltammogram shows reversible electrochemical reaction of reduction(alloying) and oxidation(de-alloying) at 0.25 V and 0.75 V, respectively. Thickness of Sn-thin film, which was calculated based on electrochemical capacity, was $7.35{\mu}m$. And reversible capacity of this cell was $400{\mu}Ah/cm^2$.

• Composites Research
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• v.32 no.6
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• pp.301-306
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• 2019

Triboelectric nanogenerator (TENG) is one of the energy harvesting methods in spotlight that can convert mechanical energy into electricity. As TENGs produce high electrical output, previous studies have shown TENGs that can power small electronics independently. However, recent studies have reported limitations of TENG due to air breakdown and field emission. In this study, we developed a triboelectric nanogenerator that utilizes the metal-to-metal surface contact to induce ion-enhanced field emission and electron avalanche for electrons to flow directly between two electrodes. The average peak open-circuit voltage of this TENG was measured as 340 V, and average peak closed-circuit current was measured as 10 mA. The electrical output of this TENG has shown different value depending on the surface charge of surface charge generation layer. The TENG developed in this study have produced RMS power of 0.9 mW, which is 2.4 times higher compared to conventional TENGs. The TENG developed in this study can be utilized in charging batteries and capacitors to power portable electronics and sensors independently.

• Applied Chemistry for Engineering
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• v.28 no.3
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• pp.263-271
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• 2017

The application of mass spectrometry to polymer science has rapidly increased since the development of MALDI-TOF MS. This review summarizes current polymer analysis methods using MALDI-TOF MS, which has been extensively applied to analyze the average molecular weight of biopolymers and synthetic polymers. Polymer sequences have also been analyzed to reveal the structures and composition of monomers. In addition, the analysis of unknown end-groups and the determination of polymer concentrations are very important applications. Hyphenated techniques using MALDI-tandem MS have been used for the analysis of fragmentation patterns and end-groups, and also the combination of SEC and MALDI-TOF MS techniques is recommended for the analysis of complex polymers. Moreover, MALDI-TOF MS has been utilized for the observation of polymer degradation. Ion mobility MS, TOF-SIMS, and MALDI-TOF-imaging are also emerging technologies for polymer characterization because of their ability to automatically fractionate and localize polymer samples. The determination of polymer characteristics and their relation to the material properties is one of the most important demands for polymer scientists; the development of software and instrument for higher molecular mass range (> 100 kD) will increase the applications of MALDI-TOF MS for polymer scientists.

• Archives of design research
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• v.13 no.2
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• pp.73-80
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• 2000

In this study design information was separately defined form general product information and thus factors reflected in product design ion the basis of values and roles were extracted. The following is a classification of 5 different types of design factors divided according to their disposition. ·Innovation factor - element which previously did not exist or element related with explicit reformation ·Open factor - active element which not only improves current performance but also induces new functions through understanding of usage situations and new possibilities. ·Anterior factor - element which prolongs and develops the early development requirements of products through C.I. and P.I. related elements and characteristics of previous models and design strategy. Self-evidence factor - element related with function visualization through product structure which may make possible the consolidation of shape and function. Rigid factor - element, based on the human factors engineering, related with the safety and efficiency of users. This classification was obtained by defining major characteristics of products considering the target consumer and market characteristics. In this classification factor structuring design process which efficiently deducted a differentiated final product by synthesizing factors of higher importance as dominant factors was proposed. With this kind of factor structuring process, product differentiation may be achieved by bestowing individual characteristics to each product by combining design dominant factors associated with the product for a specific purpose from the stages of product concept development. Moreover, this may be used as an approach to actively correspond to the various and specific demands of the comsumer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.219-225
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• 2000

The spinel structured $LiMn_2O_4$was obtained by two consecutive heat treatment on xerogel; the first heat treatment was at $150^{\circ}C$ and the second at $350^{\circ}C$ was obtained by sol-gel process using an aqueous solution of lithium hydroxide and manganese acetate. The synthesized $LiMn_2O_4$ by the sol-gel process showed a discharge capacity of 88~56 mAh/g after 15 cycles in Li/lM $LiClO_4$(in PC)/$LiMn_2O_4$at a current density of 0.25 mA/$\textrm{cm}^2$ and the voltage ranged 3.5 V to 4.3 V. For the second heat treatment above $350^{\circ}C$, $Mn_2O_3$was formed as a by-product during the synthesis of $LiMn_2O_4$. The heat treatment at $500^{\circ}C$, for example, showed a lower discharge capacity 81~47 mAh/g, after the 15 charge/discharge cycles. The lower capacity was due to the increment of $Mn^{3+}$ ion and this phenomenon was in agreement with the Jahn-Teller distortion.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.109-110
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• 2014

주사전자현미경(Scanning Electron Microscopy: SEM)은 고체상태에서 미세조직과 형상을 관찰하는 데에 가장 다양하게 쓰이는 분석기기로서 최근에 판매되고 있는 고분해능 SEM은 수 나노미터의 분해능을 가지고 있다. 그리고 SEM의 초점심도가 크기 때문에 3차원적인 영상의 관찰이 용이해서 곡면 혹은 울퉁불퉁한 표면의 영상을 육안으로 관찰하는 것처럼 보여준다. 활용도도 매우 다양해서 금속파면, 광물과 화석, 반도체 소자와 회로망의 품질검사, 고분자 및 유기물, 생체시료 nnnnnnnnn와 유가공 제품 등 모든 산업영역에 걸쳐 있다(Fig. 1). 입사된 전자빔이 시료의 원자와 탄성, 비탄성 충돌을 할 때 2차 전자(secondary electron)외에 후방산란전자(back scattered electron), X선, 음극형광 등이 발생하게 되는 이것을 통하여 topography (시료의 표면 형상), morphology(시료의 구성입자의 형상), composition(시료의 구성원소), crystallography (시료의 원자배열상태)등의 정보를 얻을 수 있다. SEM은 2차 전자를 이용하여 시료의 표면형상을 측정하고 그 외에는 SEM을 플랫폼으로 하여 EDS (Energy Dispersive X-ray Spectroscopy), WDS (Wave Dispersive X-ray Spectroscope), EPMA (Electron Probe X-ray Micro Analyzer), FIB (Focus Ion Beam), EBIC (Electron Beam Induced Current), EBSD (Electron Backscatter Diffraction), PBMS (Particle Beam Mass Spectrometer) 등의 많은 분석장치들이 SEM에 부가적으로 장착되어 다양한 시료의 측정이 이루어진다. 이 중 결정구조, 조성분석을 쉽고 효과적으로 할 수 있게 하는 X선 분석장치인 EDS를 SEM에 일체화시킨 장비와 EDS 및 PBMS를 SEM에 장착하여 반도체 공정 중 발생하는 나노입자의 형상, 성분, 크기분포를 측정하는 PCDS(Particle Characteristic Diagnosis System)에 대해 소개하고자 한다. - EDS와 통합된 SEM 시스템 기본적으로 SEM과 EDS는 상호보완적인 기능을 통하여 매우 밀접하게 사용되고 있으나 제조사와 기술적 근간의 차이로 인해 전혀 다른 방식으로 운영되고 있다. 일반적으로 SEM과 EDS는 별개의 시스템으로 스캔회로와 이미지 프로세싱 회로가 개별적으로 구현되어 있지만 로렌츠힘에 의해 발생하는 전자빔의 왜곡을 보정을 위해 EDS 시스템은 SEM 시스템과 연동되어 운영될 수 밖에 없다. 따라서, 각각의 시스템에서는 필요하지만 전체 시스템에서 보면 중복된 기능을 가지는 전자회로들이 존재하게 되고 이로 인해 SEM과 EDS에서 보는 시료의 이미지의 차이로 인한 측정오차가 발생한다(Fig. 2). EDS와 통합된 SEM 시스템은 중복된 기능인 스캔을 담당하는 scanning generation circuit과 이미지 프로세싱을 담당하는 FPGA circuit 및 응용프로그램을 SEM의 회로와 프로그램을 사용하게 함으로 SEM과 EDS가 보는 시료의 이미지가 정확히 일치함으로 이미지 캘리브레이션이 필요없고 측정오차가 제거된 EDS 측정이 가능하다. - PCDS 공정 중 발생하는 입자는 반도체 생산 수율에 가장 큰 영향을 끼치는 원인으로 파악되고 있으며, 생산수율을 저하시키는 원인 중 70% 가량이 이와 관련된 것으로 알려져 있다. 현재 반도체 공정 중이나 반도체 공정 장비에서 발생하는 입자는 제어가 되고 있지 않은 실정이며 대부분의 반도체 공정은 저압환경에서 이루어지기에 이 때 발생하는 입자를 제어하기 위해서는 저압환경에서 측정할 수 있는 측정시스템이 필요하다. 최근 국내에서는 CVD (Chemical Vapor Deposition) 시스템 내 파이프내벽에서의 오염입자 침착은 심각한 문제점으로 인식되고 있다(Fig. 3). PCDS (Particle Characteristic Diagnosis System)는 오염입자의 형상을 측정할 수 있는 SEM, 오염입자의 성분을 측정할 수 있는 EDS, 저압환경에서 기체에 포함된 입자를 빔 형태로 집속, 가속, 포화상태에 이르게 대전시켜 오염입자의 크기분포를 측정할 수 있는 PBMS가 일체화 되어 반도체 공정 중 발생하는 나노입자 대해 실시간으로 대처와 조치가 가능하게 한다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.