• Title/Summary/Keyword: Ion beam voltage

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Alignment Effects for Nematic Liquid Crystal on a New Diamond-like Carbon Layer

  • Seo, Dae-Shik;Jo, Yong-Min;Hwang, Jeoung-Yeon;Lee, Sang-Keuk
    • Transactions on Electrical and Electronic Materials
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    • v.3 no.2
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    • pp.1-5
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    • 2002
  • Alignment effects for nematic liquid crystal (NLC) and electro-optical (EO) characteristics of the ion beam (IB) aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the diamond-like carbon (DLC) thin film surface were studied. A high pretilt angle of 3.5$^{\circ}$ in NLC by ion beam exposure on the DLC thin film layer can be measured. An excellent voltage-transmittance (V-T) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for 1 min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.

EO Performances for Ion-beam Aligned TN-LCD on a DLC Thin Film Layer

  • Jo, Yong-Min;Hwang, Jeoung-Yeon;Seo, Dae-Shik;Lee, Sang-Keuk
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.04b
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    • pp.118-120
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    • 2002
  • Electro-optical (EO) characteristics of the ion beam (IB) aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the diamond-like carbon (DLC) thin film surface were studied. An excellent voltage-transmittance (V-T) curve of the ion beam aligned IN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for I min. Also, a faster response time for the ion beam aligned TN-LCD with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.

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Structure and properties of ion beam deposited diamond-like carbon films (이온빔 합성법에 의해 증착된 다이아몬드성 카본 필름의 구조 및 특성)

  • 김성화;이광렬;은광용
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.346-352
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    • 1999
  • Diamond-like carbon (DLC) lims were deposited by using end hall type ion gun. Benzene gas was used for the generation of carbon ions. In order to systematically control the ion energy, we applied to the substrate DC, pulsed DC or 250 kHz medium frequency bias voltage, DLC films of superior mechanical properties of hardness 39$\pm$4 GPa and elastic mudulus 290$\pm$50GPa (2 to 6 times better than those of the films deposited by plasma assisted CVD method) could be obtained. Deposition rate was much higher than when using Kaufman type ion source, which results from higher ion beam current of end hall type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type ion gun. The mechanical properties and atomic bond structure were independent of the bias voltage type but intimately related with the magnitude of the bias voltage. With increasing the negative bias voltage, the structure of the films changed to graphitic one resulting in decreased content of three dimensional inter-links. Degradation of the mechanical properties with increasing bias voltage could be thus understood in terms of the content odf three dimensional inter-links.

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Impurity analysis of Ta films using secondary ion mass spectrometry (이차이온 질량분석기를 이용한 탄탈 박막내의 불순물 분석)

  • ;;Minoru Isshiki
    • Journal of the Korean Vacuum Society
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    • v.13 no.1
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    • pp.22-28
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    • 2004
  • Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -125 V ($V_{s}$ = -125 V) using a non-mass separated ion beam deposition system. To investigate the effect of the negative substrate bias voltage on the impurity concentration in the Ta films, secondary ion mass spectrometry (SIMS) was used to determine impurities in the Ta films. By the SIMS depth profiles with $Cs^{+}$ cluster ion beam, high intensities of O, C and Si were clearly found in the Ta film at $V_{s}$ = 0 V, whereas these impurities remarkably decreased in the Ta film at $V_{s}$ = -125 V. Furthermore, from the SIMS result with $Cs^{+}$ and $O_2^{+}$ ion beams, it was found that applying the negative substrate bias voltage could affect individual impurity contents in the Ta films during the deposition. Discussions concerning the effect of the negative substrate bias voltage on the impurity concentration of Ta films will be described in details.

EO Performances of the Ion Beam Aligned TN-LCD on a Diamond-like-Carbon Thin Film Surface

  • Hwang, Jeoung-Yeon;Jo, Yong-Min;Seo, Dae-Shik;Rho, Soon-Joon;Baik, Hong-Koo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.497-499
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    • 2003
  • Electro-optical (EO) performances of the ion beam aligned twisted nematic (TN)-liquid crystal display (LCD) with oblique ion beam exposure on the DLC thin film surface were studied. An excellent voltage-transmittance (VT) curve of the ion beam aligned TN-LCD was observed with oblique ion beam exposure on the DLC thin film surface for 1 min. Also, a faster response time for the ion beam aligned TN-LCD can be achieved with oblique ion beam exposure on the DLC thin film surface for 1 min can be achieved.

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Power Supply and Control System for Injector of Ion Accelerator (이온 가속기의 인젝터 전원 장치 및 제어 시스템)

  • Im, Geun-Hui;Nikiforov, S.A.
    • Proceedings of the KIEE Conference
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    • 1997.11a
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    • pp.544-549
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    • 1997
  • Injector of high voltage or linear ion accelerator is intended to generate, extract and form beam of certain species with required parameters at the entrance of accelerating structure or, for low energy case, directly in the processing chamber (end station). Injector is the main part defining the ion accelerator performance and reliability. Its power supply and control system (PSCS) features are conditioned by placing the injector equipment at high voltage potential and by complexity of the plasma-beam load. The injector's PSCS should provide: - Transmission of electric power onto high voltage (h/v) terminal; - Obtaining of required output characteristics for injector equipment operation; - Transmission of the operational data and start/stop signals from h/v terminal to control cabinet; - Rremote control of injector; - Withstanding the high voltage breakdowns and X-ray radiation; - Compatibility with other equipment. The paper is concerned with analysis of injectors' PSCS structure and description of the system developed for 50 keV, 20 mA heavy ion injector.

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QMF Ion Beam System Development for Oxide Etching Mechanism Study (산화막 식각 기구 연구를 위한 QMF Ion Beam 장치의 제작)

  • 주정훈
    • Journal of the Korean institute of surface engineering
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    • v.37 no.4
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    • pp.220-225
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    • 2004
  • A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of $4${\times}$10^{11}$#/㎤. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of $1\AA$/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed $Ar^{+}$ beam was detected at the $2^{nd}$ QMS.

Evolution the surface morphology and mechanical properties of Polyimide induced by Ion Beam Irradiation

  • Ahmed, Sk. Faruque;Nho, Gun-Ho;Moon, Myoung-Woon;Han, Jun-Hyun;Lee, Kwang-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.98-98
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    • 2010
  • Ion beam irradiation has been extensively used for surface modification of polymers, glassy metals and amorphous and crystalline materials at micron and submicron scales. The surface structures created by exposure to an ion beam range from dots, steps and one-dimensional straight wrinkles to highly complex hierarchical undulations and ripples. In general, the morphology of these nanoscale features can be selected by controlling the ion beam parameters (e.g. fluence and acceleration voltage), making ion beam irradiation a promising method for the surface engineering of materials. In the work, we presented that ion beam irradiation results in creation of a peculiar nanoscale dimple-like structure on the surface of polyimide - a common polymer in electronics, large scale structures, automobile industry, and biomedical applications. The role of broad Ar ion beam on the morphology of the structural features was investigated and insights into the mechanisms of formation of these nanoscale features were provided. Moreover, a systematic experimental study was performed to quantify the role of ion beam treatment time, and thus the morphology, on the coefficient of friction of polyimide surfaces covered by nanostructure using a tribo-experiment. Nano-indentation experiment were performed on the ion beam treated surfaces which shows that the hardness as well as the elastic modulus of the polyimide surface increased with increase of Ar ion beam treatment time. The increased of hardness of polyimide have been explained in terms of surface structure as well as morphology changes induced by Ar ion beam treatment.

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A Study on $He^+$ Ion Beam Extraction in the Duoplasmatron Ion Source (Duoplasmatron 이온원에서의 $He^+$ 이온빔 인출에 관한 연구)

  • Myong-Seop KIM;Hae-iLL BAK
    • Nuclear Engineering and Technology
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    • v.23 no.4
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    • pp.438-443
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    • 1991
  • The operational characteristics of the duoplasmatron ion source are investigated in order to obtain the maximum achievable extraction current of the $He^+$ ion beam with the small divergence. Under the variations of the gas pressure, the arc current, the magnet current and the extraction voltage of the ion source, the change of the extracted $He^+$ ion beam current is observed. An oxide filament, the mixture of BaO and SrO coated on Ni meshes, is used as the hot cathode, and its average lifetime is about 100 hours. The extraction current is linearly proportional to the arc current. As the magnet current of the ion source is increased, the extraction current increases, but the beam divergence becomes larger. The maximum extraction current is obtained at the source pressure of 0.084 Torr. The extraction current is proportional to the extraction voltage raised to the power of 3/2 as estimated from theory. At the extraction voltage of 5.72 kV, the maximum extraction current of 50 $\mu$A is obtained under the optimized extraction condition.

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