• The Korean Journal of Ceramics
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• v.3 no.3
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• pp.173-176
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• 1997

Direct metal ion beam deposition is considered to be a whole new thin film deposition technique. Unlike other conventional thin film deposition processes, the individual deposition particles carry its own ion beam energies which are directly coupled for the formation of this films. Due to the nature of ion beams, the energies can be controlled precisely and eventually can be tuned for optimizing the process. SKION's negative C- ion beam source is used to investigate the initial nucleation mechanism and growth. Strong C- ion beam energy dependence has been observed. Complete phase control of sp3 and sp3, control of the C/SiC/Si interface layer, control of crystalline and amorphous mode growth, and optimization of the physical properties for corresponding applications can be achieved.

• Nuclear Engineering and Technology
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• v.23 no.4
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• pp.438-443
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• 1991

The operational characteristics of the duoplasmatron ion source are investigated in order to obtain the maximum achievable extraction current of the $He^+$ ion beam with the small divergence. Under the variations of the gas pressure, the arc current, the magnet current and the extraction voltage of the ion source, the change of the extracted $He^+$ ion beam current is observed. An oxide filament, the mixture of BaO and SrO coated on Ni meshes, is used as the hot cathode, and its average lifetime is about 100 hours. The extraction current is linearly proportional to the arc current. As the magnet current of the ion source is increased, the extraction current increases, but the beam divergence becomes larger. The maximum extraction current is obtained at the source pressure of 0.084 Torr. The extraction current is proportional to the extraction voltage raised to the power of 3/2 as estimated from theory. At the extraction voltage of 5.72 kV, the maximum extraction current of 50 $\mu$A is obtained under the optimized extraction condition.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.240-240
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• 2011

The first neutral beam injector (NBI-1) has been developed for the Korea Superconducting Tokamak Advanced Research (KSTAR) tokamak. A first long pulse ion source (LPIS-1) has been installed on the NBI-1 for an auxiliary heating and current drive of KSTAR core plasmas. Performance of ion and neutral beam extractions in the LPIS-1 was investigated initially on the KSTAR NBI-1 system, prior to the neutral beam injection into the main plasmas. The ion source consists of a JAEA magnetic bucket plasma generator with multi-pole cusp fields and a set of KAERI prototype-III tetrode accelerators with circular apertures. The inner volume of plasma generator and accelerator column in the LPIS-1 is approximately 123 liters. Final design requirements for the ion source were a 120 kV/ 65 A deuterium beam and a 300 s pulse length. The extraction of ion beams was initiated by the formation of arc plasmas in the LPIS-1, called as an arc-beam extraction method. A stable ion beam extraction of LPIS-1 has been achieved up to an 100 kV/42 A for a 4 s pulse length and an 80 kV/25 A for a 14 s pulse length. Optimum beam perveance of 1.21 microperv has been found at an accelerating voltage of 80 kV. Neutralization efficiency has been measured by using a water flow calorimetry (WFC) method of calorimeter and an operation of bending magnet. The full-energy species of ion beams have been detected by using the diagnostic method of optical multichannel analyzer (OMA). An arc efficiency of the LPIS was 0.6~1.1 A/kW depending on the operating conditions of arc discharge.

• Applied Science and Convergence Technology
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• v.25 no.6
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• pp.116-119
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• 2016

In this study, we fabricated the $K^+$ ion source for the various purposes and investigated the emission characteristics. The fabricated $K^+$ ion source was painted in the tungsten filament to make filament type ion source. The RGA spectra show that the filament type $K^+$ ion source has a good out gassing character, so it can be used in the ultra-high vacuum system. The maximum $K^+$ ion current was 20 mA when filament temperature was 1410 K and filament potential was 50 V. When the filament temperature was 1070 K, the initial beam current was 50 mA and decreased only by 2% during 4 hours. The emitting energy was measured to be 2.04 eV. This low value means that the fabricated specimen is a good $K^+$ ion source. We conclude that this filament type ion source can be used in various fields, including the LEIS research.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.104.2-104.2
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• 2013

A residual gas analyzer (RGA) system has been developed in this laboratory. Characteristics of the RGA system parts such as ion source, quadrupole mass filter and sensitivity are introduced. Some efforts have been made to improve performance of the two types of ion sources, open ion source (OIS) and closed ion source (CIS). A metal mesh was placed onto the electron beam entrance of the CIS anode tube to block the filament field penetration. Sensitivity of the CIS ion sources with and without the mesh was compared by mass spectra of SF6 gas (97% He base) introduced into the CIS anode through a needle valve. About ten-times improvement in the RGA sensitivity was observed for the CIS with the mesh in the electron entrance. Computer simulation showed an axi-symmetric anode potential distribution and improved focusing of the electron beam inside the anode tube with the mesh.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.497-497
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• 2012

산업의 발전함에 따라 고기능성 박막의 수요가 증가하고 있으며, magnetron sputtering, e-beam evaporation, ion beam 등을 이용한 박막 증착에 대한 연구가 많이 진행되고 있다. 그러나 기존 방법만으로는 박막 접착계면의 불균일로 인해 고기능성 박막 성장이 어렵다는 단점을 가지고 있다. 이러한 문제를 해결하기 위하여 박막 공정 중 고밀도 플라즈마 소스(high density plasma source)를 통해 추가적인 에너지를 인가하여 박막의 밀도를 bulk 수준으로 증가시키고 내부 응력을 조절하는 연구에 대한 관심이 커지고 있다. 특히 grid를 이용하여 플라즈마 내 이온의 입사에너지를 증가시킴으로써, 기존 공정보다 고기능성 박막을 구현할 수 있다. 본 연구에서는 RF power를 이용한 inductively coupled plasma를 통해 플라즈마를 생성시킨 후 grid에 DC power를 인가하는 플라즈마 소스를 개발하였으며, 시뮬레이션을 통해 plasma density와 ion current density, ion energy 분석 및 grid 디자인을 하였다. 개발된 플라즈마 소스는 ion energy analyzer를 통해 RF power 및 grid에 인가하는 power의 세기에 따라 이온화 정도 및 이온의 입사에너지를 측정하였다.

• Nuclear Engineering and Technology
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• v.29 no.3
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• pp.181-185
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• 1997

The ion sources for induction linac driven heavy ion fusion were fabricated and their omittance characteristics were investigated. For to kinds of ion sources, i. e. a carbon vacuum arc ion source and a cusp field rf ion source, the emittance was measured with a double slit beam scanner. The required normalized omittance of an ion source for heavy ion fusion is 10$^{-7}$ - 5$\times$10$^{-7}$ $\pi$ m-rod, and the measured emittances of the ion beams from carbon vacuum arc ion source and cusp field rf ion source (Ne$^{+}$) were 2$\times$10$^{-6}$ $\pi$ m-rad and 4$\times$10$^{-7}$ $\pi$ m-rad, respectively.y.

• Transactions on Electrical and Electronic Materials
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• v.9 no.3
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• pp.120-122
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• 2008

We have studied the tilt angle generation on the homeotropic polyimide (PI) surface using a low intensity ion beam source as a function of incident angle. An excellent LC alignment of nematic liquid crystal (NLC) on the PI surface with ion beam exposure for all incident angles was observed. The tilt angle of NLC on the homeotropic PI surface for all incident angles was from 90 to 88 degree was observed. Also the tilt angle of NLC on the homeotropic PI surface with ion beam exposure of 400 eV had a tendency to increase as ion beam energy incident angle become more instance from 45 degree. Finally, a good LC alignment thermal stability on the homeotropic PI surface with ion beam exposure can be achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.311-312
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• 2006

We studied homeotropic alignment effect for a nematic liquid crystal (NLC) on the $SiO_x$, thin film irradiated by the new ion beam method $SiO_x$ thin films were deposited by plasma enhanced chemical vapor deposition (PECVD) and were treated by the DuoPIGatron ion source. A uniform liquid crystal alignment effect was achieved over 2100 eV ion beam energy. Tilt angle were about $90^{\circ}$ and were not affected by various ion beam energy.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.154.1-154.1
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• 2014

Indium gallium zinc oxide (IGZO)는 차세대 디스플레이 평판 패널에 사용되는 반도체 화합물의 일종으로 최근 주목받고 있는 물질의 하나이다. 기존의 IGZO를 사용하여 박막을 증착한 뒤 표면 처리를 통해 박막의 특성 변화에 대한 연구들이 진행되어 왔으며, 기존의 연구들은 plasma 환경에 노출을 시켜 간접적인 plasma treatment를 통해 박막의 특성을 향상시켜 왔다. 본 연구에서는 기존의 plasma treatment에서 발견된 방식인 ion beam treatment를 통해 플라즈마를 직접적으로 표면에 조사하여 박막의 특성 변화를 알아보았다. 한국표준과학연구원에서 자체 제작한 chamber를 이용하여 RF sputter로 Si wafer 위에 IGZO 박막을 증착하고 수소 ion beam treatment를 한 뒤, SEM과 XPS를 사용하여 박막 표면의 물성 변화를 분석하였다. 실험에 사용된 chamber에는 sputter gun과 ion beam이 함께 장착되어 있으며, scroll pump와 TMP를 사용하여 pressure를 유지하였다. 실험 시 base pressure는 $1.4{\times}10^{-6}Torr$였다. RF power 150 W. ion beam power 2,000 V에서 실험을 진행하였다.