• Tribology and Lubricants
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• v.20 no.5
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• pp.237-244
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• 2004

Micro/nano tribological characteristics of PTFE coating films were experimentally studied. PTFE (polytetrafluoroethylene) modified polyethylene and low molecular weight PTFE were used as a coating materials. These films were deposited on Si-wafer (100) by IBAD (ion beam assisted deposition) method. The Ar ion beam sputtering was performed to change the surface topography of films using a hollow cathode ion gun under different Ar ion dose conditions in a vacuum chamber. Micro/nano tribological characteristics, water wetting angles and roughness were measured with a micro tribotester, SPM (scanning probe microscope), contact anglemeter and profilometer, respectively. The durability of the films were measured with macro tribotester. Results showed that the PTFE coating surfaces were converted to hydrophobic. The water contact angle of coated surfaces and surface roughness increased with the coating thickness. Adhesion and friction in micro and nano scale were governed by magnitude of normal load in soft material such as PTFE films. As the increase of sputtering time on low molecular weight PTFE films, the surface roughness was increased and nano adhesion and friction were decreased. The nano tribological characteristics of surfaces are mainly improved by chemical modification such as PTFE coating and given a synergy effect by the physical modification such as topographic modification.

• Journal of Electrochemical Science and Technology
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• v.2 no.4
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• pp.193-197
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• 2011

The influences of the thickness and microstructure of Fe layer on the electrochemical performances of Fe/Si multilayer thin film anodes were investigated. The Fe/Si multilayer films were prepared by electron beam evaporation, in which Fe layer was deposited with/without simultaneous bombardment of Ar ion. The kinetics of Li insertion/extraction reactions in the early stage are slowed down with increasing the thickness of Fe layer, but such a slowdown seems to be negligible for thin Fe layers less than about $500{\AA}$. When the Fe layer was deposited with ion bombardment, even the $300{\AA}$ thick Fe layer significantly suppress Li diffusion through the Fe layer. This is attributed to the dense microstructure of Fe layer, induced by ion beam assisted deposition (IBAD). It appears that the Fe/Si multilayer films prepared with IBAD show good cyclability compared to the film deposited without IBAD.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.5-18
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• 1996

The solid state cesium ion source os alumino-silicate based zeolite which contains cerium. The material is an ionic conductor. Cesiums are stably stored in the material and one can extract the cesiums by applying electric field across the electrolyte. Cesium ion bombardment has the unique property of producing high negative ion yield. This ion source is used as the primary source for the production of a negative ion without any gas discharge or the need for a carrier gas. The deposition of materials as an ionic species in the energy range of 1.0 to 300eV is recently recognized as a very promising new thin film technique. This energetic non-thermal equilibrium deposition process produces films by “Kinetic Bonding / Energetic Condensation" mechansim not governed by the common place thermo-mechanical reaction. Under these highly non-equilibrium conditions meta-stable materials are realized and the negative ion is considered to be an optimum paeticle or tool for the purpose. This process differs fundamentally from the conventional ion beam assisted deposition (IBAD) technique such that the ion beam energy transfer to the deposition process is directly coupled the process. Since cesium ion beam sputter deposition process is forming materials with high kinetic energy of metal ion beams, the process provider following unique advantages:(1) to synthesize non thermal-equilibrium materials, (2) to form materials at lower processing temperature than used for conventional chemical of physical vapor deposition, (3) to deposit very uniform, dense, and good adhesive films (4) to make higher doposition rate, (5) to control the ion flux and ion energy independently. Solid state cesium ion beam sputter deposition system has been developed. This source is capable of producing variety of metal ion beams such as C, Si, W, Ta, Mo, Al, Au, Ag, Cr etc. Using this deposition system, several researches have been performed. (1) To produce superior quality amorphous diamond films (2) to produce carbon nitirde hard coatings(Carbon nitride is a new material whose hardness is comparable to the diamond and also has a very high thermal stability.) (3) to produce cesiated amorphous diamond thin film coated Si surface exhibiting negative electron affinity characteristics. In this presentation, the principles of solid state cesium ion beam sputter deposition and several applications of negative metal ion source will be introduced.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.12
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• pp.8679-8683
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• 2015

Using a surface modification technique, ion beam assisted deposition (IBAD) of Ti thin film it becomes possible to prepare an active ceramic surface to braze $Al_2O_3$-STS304 with conventional Ag-Cu eutectic composition filler metal. Researches on bonding formations at interfaces of ceramic joints were mainly related on the development of filler metals to ceramic, the process parameters, and clarifications of reaction products. From the results, the reactive brazing is a very convenient technique compared to the conventional Mn-Mo method. However melting point of reactive filler is still higher than that of Ag-Cu eutectic and it forms the brittle inter metallic compound. Recently several new approaches are introduced to overcome the main shortcomings of the reactive metal brazing in ceramic-metal, metal vapor vacuum arc ion source was introduced to implant the reactive element directly into the ceramics surface, and sputter deposition with sputter etching for the deposition of active material.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2001.06a
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• pp.127-134
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• 2001

Nano adhesion and friction between a Sj$_3$N$_4$ AFM tip and thin silver films were experimentally studied. Tests were performed to measure the nano adhesion and friction in both AFM(atomic force microscope) and LFM(lateral force microscope) modes in various ranges of normal load. Thin silver films deposited by IBAD (ion beam assisted deposition) on Si-wafer (100) and Si-wafer of different surface roughness were used. Results showed that nano adhesion and friction decreased as the surface roughness increased. When the Si surfaces were coated by pure silver, the adhesion and friction decreased. But the adhesion and friction were not affected by the thickness of IBAD silver coating. As the normal force increased, the adhesion forces of bare Si-wafer and IBAD silver coating film remained constant, but the friction forces increased linearly. Test results suggested that the friction was mainly governed by the adhesion as long as the normal load was low.

• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.43-50
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• 1999

We have studied the alignment and the lattice quality of hexagonal rings of h-BN films synthesized by ion beam assisted deposition (IBAD) method. Boron was e-beam evaporated at 1.5 $\AA$/sec and nitrogen gas was ionized using end-hall type ion gun at 60, 80, and 100 eV, respectively. Substrate was either not heated or heated at 200, 400, 500, and $800^{\circ}C$, respectively. As nitrogen ion energy increases, c-axes of hexagonal rings tend to align parallel to the substrate, which is explained by larger compressive stress at higher ion energies. Alignment of c-axis increases with temperature and shows maximum around $400^{\circ}C$. The lattice quality of hexagonal rings improves with temperature. Such behaviors can be understood from two counter trends of increasing the atomic mobility and decreasing compressive stress with temperature. Hardness of h-BN films shows the same trend with the alignment of c-axis. Ion beam assisted deposition method seems to be effective for aligning hexagonal rings and optimizing h-BN properties.

• Applied Chemistry for Engineering
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• v.16 no.4
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• pp.527-532
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• 2005

Ionic polymer metal composites (IPMC) are soft polymeric smart materials having large displacement at low voltage in air and water. The polymeric electrolyte actuator consists of a thin and porous membrane and metal electrodes plated on both faces, in impregnation electro-plating method. The response and actuation of actuator are governed. Among many factors governing the activation and response of IPMC actuator, the surface electrode plays an important role. In this study, the well-designed modification of electrode surface was carried out in order to improve the chemical stability well as electromechanical characteristics of the IPMC actuator. We employed Ion Beam Assisted Deposition (IBAD) method to prepare the topologically homogeneous thin surface electrode. After roughing the surface of Nafion membrane in order to get a larger surface area, the IPMC was prepared by impregnation for electro-plating and re- coating on the surface through traditional chemical deposition, followed by an additional surface treatment with high conductive metals with IBAD. It was observed that our IPMC specimen shows the enhanced surface electrical properties as well as the improved actuation and response characteristics under applied electric field.

• The Journal of Korean Academy of Prosthodontics
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• v.47 no.4
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• pp.376-384
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• 2009

Purpose: The purpose of this study was to evaluate the response of osteoblast-like cells to Ca-P coated surface obtained via Ion beam-assisted deposition (IBAD) method and Sol-Gel process on anodized surface by cellular proliferation and differentiation. Material and methods: The surface of a commercially pure titanium (Grade IV) discs with dimension of 10mm diameter and 2 mm thickness was modified by anodic oxidation under a constant voltage of 300 V. The experimental groups were coated with Ca-P by the IBAD method and Sol-Gel process on anodized surface. The surface roughness (Ra) of specimens was measured by optical interferometer and each surface was examined by SEM. To evaluate cell response, MG63 cells were cultured and cell proliferation, ALP activity and the ability of cell differentiation were examined. Also, cell morphology was examined by SEM. The significant of each group was verified by Kruskal-Wallis Test ($\alpha$=.05). Results: The Ra value of Ca-P coated surface by IBAD method was significantly higher than Ca-P coated surface by Sol-gel process (P < .05). The level of cell proliferation and ALP activity was higher in Ca-P coated surface by IBAD method (P<.05). The expression of ALP showed higher level expression in Ca-P coated surface by IBAD method. Cells grown on Ca-P coated surface by IBAD method were uniformly distributed and developed a very close layer. Conclusion: These experiments showed better performances of Ca-P coated surface by IBAD method with respect to Ca-P coated surface by Sol-gel process. Ca-P coated surface by IBAD method appear to give rise more mature osteoblast characteristics and might result in increased bone growth and bone-implant contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.282-283
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• 2005

Ion beam assisted deposition(IBAD) technique was used to produce biaxially textured polycrystalline MgO thin films for high critical current YBCO coated conductor. Hastelloy tapes were continuous electropolished with very smooth surface for IBAD-MgO deposition, RMS roughness of Hastelloy tape values below 2 nm and local slope of less than $1^{\circ}$. After the polishing of the tape an amorphous $Y_2O_3$ and $Al_2O_3$ are deposited Biaxially textured MgO was deposited on amorphous layer bye-beam evaporation with a simultaneous bombardment of high energy ions. We had developed the RHEED to measure in-situ biaxial texture of film surface as thin as tens angstrom. And also ex-situ characterization of buffer layers was studied using XRD and SEM. The full-width at half maximum(FWHM) out of plane texture of IBAD-MgO template is $4^{\circ}$.

• Progress in Superconductivity
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• v.8 no.2
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• pp.175-180
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• 2007

High temperature superconductor $YBa_2Cu_3O_{7-x}$ (YBCO) films have been grown by in-situ electron beam evaporation on artificial metal tapes such as ion-beam assisted deposition (IBAD) and rolling assisted biaxially textured substrates (RABiTS). Deposition rate of the YBCO films is $10{\sim}100{\AA}/sec$. X-ray diffraction shows that the films are grown epitaxially but have inter-diffusion phases, like as $BaZrO_3\;or\;BaCeO_3$, at their interfaces between YBCO and yttrium-stabilized zirconia (YSZ) or $CeO_2$, respectively. Secondary ion mass spectroscopy depth profile of the films confirms diffused region between YBCO and the buffer layers, indicating that the growth temperature ($850{\sim}900^{\circ}C$) is high enough to cause diffusion of Zr and Ba. The films on both the substrates show four-fold symmetry of in-plane alignment but their width in the -scan is around $12{\sim}15^{\circ}$. Transmission electron microscopy shows an interesting interface layer of epitaxial CuO between YBCO and YSZ, of which growth origin may be related to liquid flukes of Ba-Cu-O. Resistivity vs temperature curves of the films on both substrates were measured. Resistivity at room temperature is between 300 and 500 cm, the extrapolated value of resistivity at 0 K is nearly zero, and superconducting transition temperature is $85{\sim}90K$. However, critical current density of the films is very low, ${\sim}10^3A/cm^2$. Cracking of the grains and high-growth-temperature induced reaction between YBCO and buffer layers are possible reasons for this low critical current density.