• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.431-431
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• 2007

In this paper, the LC alignment characteristics of the NDLC thin film deposited by PECVD and sputtering were reported respectively. The NDLC thin film deposited using sputter showed uniform LC alignment at the 1200 eV of the ion beam intensity and pretilt angle was about $2^{\circ}$ while the NDLC thin film deposited using the PECVD showed uniform LC alignment and high pretilt angle at the 1800 eV of the ion beam intensity. Concerning the ion beam intensity, uniform LC alignment of the NDLC thin film deposited by the sputtering was achieved at the lower intensity. And the pretilt angle of the NDLC thin film deposited by sputter was higher than those of NDLC thin film that was deposited using the PECVD. The uppermost of the thermal stability of NDLC thin film was $200^{\circ}C$, respectively. However, NDLC thin film deposited by the PECVD showed stability at high temperature without defects, compared to NDLC thin film deposited by the sputter.

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.474-477
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• 1996

The solid state cesium ion beam sputter deposition system has been developed for negative carbon ion beam deposition. The negative carbon ion beams are effectively produced by cesium ion bombardment. The C-ion beam current and deposition energy can be independently controlled for the deposition of a-D films. This system is very compact, reliable and high flux without any gas discharge or plasma and has been successfully used in the studies of the ion beam deposited amorphous diamond(a-D)

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.20-20
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• 1998

I Ion beam technology has recently attracted much interest because it has exciting t technological p아:ential for surface analysis, ion beam mixing, surface cleaning and etching i in thin film growth and semiconductor fabrication processes, etc. Es야~cially, ion beam s sputtering has been widely used for sputter depth profiling with x-photoelectron S spectroscopy (XPS) , Auger electron s$\pi$~troscopy(AES), and secondary-ion mass S야i따oscopy(SIMS). However, The problem of surface compositional ch없1ge due to ion b bombardment remains to be understo여 없ld solved. So far sputtering processes have been s studied by s따face an외ysis tools such as XPS, AES, and SIMS which use the sputtering p process again. It would be improbable to measure the modified surface composition profiles a accurately due to ion beam bombardment with surface analysis techniques based on sputter d depth profiling. However, recently Medium energy ion scattering spectroscopy(MEIS) has b been applied to study the sputtering of solid surface at ion bombardment and has been p proved that it has been extremely valuable in probing the surface composition 뻐d s structure nondestructively and quantita디vely with less than 1.0 nm depth resolution. To u understand the sputtering processes of solid surface at ion bombardment, The Molecular D Dynamics(MD) and Monte Carlo(MC) simulation has been used and give an intimate i insight into the sputtering processes of solid surfaces. In this presentation, the sputtering processes of alloys and compound samples at ion b bombardment will be reviewed and the MEIS results for the Ar+ sputter induced altered l layer of the TazOs thin film 뻐dd없nage profiling of Ar+ ion sputt얹"ed Si(100) surface will b be discussed with the results of MD and MC simulation.tion.

• Proceedings of the Materials Research Society of Korea Conference
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• 1998.11a
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• pp.44-44
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• 1998

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.26-31
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• 2009

The effects of $Ar/O_2$ ion-beam pre-treatment conditions on the interfacial adhesion energy of sputterdeposited Cu thin film to FR-4 substrate were systematically investigated in order to understand the interfacial bonding mechanism for practical application to advanced chip-in-substrate package systems. Measured peel strength increases from $45.8{\pm}5.7g/mm$ to $61.3{\pm}2.4g/mm$ by $Ar/O_2$ ion-beam pre-treatment with anode voltage of 64 V. Interfacial bonding mechanism between sputter-deposited Cu film and FR-4 substrate seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical bonding intensity between carbon and oxygen at FR-4 surface increases due to $Ar/O_2$ ion-beam pretreatment, which seems to be related to the strong adhesion energy between sputter-deposited Cu film and FR-4 substrate.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.73-73
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• 1999

A large area negative metal ion beam source is developed. Kinetic ion beam of the incident metal ions yields a whole nucleation and growth phenomena compared to the conventional thin film deposition processes. At the initial deposition step one can engineer the surface and interface by tuning the energy of the incident metal ion beams. Smoothness and shallow implantation can be tailored according to the desired application process. Surface chemistry and nucleation process is also controlled by the energy of the direct metal ion beams. Each individual metal ion beams with specific energy undergoes super-thermodynamic reactions and nucleation. degree of formation of tetrahedral Sp3 carbon films and beta-carbon nitride directly depends on the energy of the ion beams. Grain size and formation of polycrystalline Si, at temperatures lower than 500deg. C is obtained and controlled by the energy of the incident Si-ion beams. The large area metal ion source combines the advantages of those magnetron sputter and SKIONs prior cesium activated metal ion source. The ion beam source produces uniform amorphous diamond films over 6 diameter. The films are now investigated for applications such as field emission display emitter materials, protective coatings for computer hard disk and head, and other protective optical coatings. The performance of the ion beam source and recent applications will be presented.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.400-406
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• 2015

This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

• Journal of the Korean Vacuum Society
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• v.15 no.5
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• pp.451-457
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• 2006

We measured pumping speed of a sputter ion pump with a honeycomb anode cell structure and compared the result with that of another sputter ion pump with a typical cylindrical anode cell structure. A cell module with a honeycomb structure has no dead space which is about 10 % of the entire horizontal area of the cell module with a cylindrical structure. This dead space makes a little contribution to the ionization of the gas, so the pumping performance of the pump with dead space is expected to be lowered by the amount. From the experimental data we concluded that the honeycomb cell structure is superior to the cylindrical structure by $5{\sim}10%$ in performance.

• Journal of the Korean Society for Precision Engineering
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• v.8 no.3
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• pp.105-113
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• 1991

The practicability of Ion-Sputter machining renders it possible to make diamond stylus for surface roughness measurement with micro stylus tip radius less than 2${\mu}mR$, and to measure surface roughness of fine-machined surface. In this study, we researched the wear or Ion-Sputtered stylus with 0.1${\mu}mR$ and 0.5${\mu}mR$ for micro-figure measurement and polished stylus with 0.5${\mu}mR$ according to measurement distance. As a result, we know that the case of Ion-Sputtered stylus is worn down easilier the case of polished stylus. And we know that in the evaluation of stylus wear, it is more useful method that examine the wear by measuring the variation of stylus tip radius than by evaluating the variation of Ra values.