• Proceedings of the Korean Society of Precision Engineering Conference
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• 2008.06a
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• pp.409-410
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• 2008

• Proceedings of the KIPE Conference
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• 1998.10a
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• pp.436-441
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• 1998

This paper proposes an novel dc power supply using modified multilevel ac/dc converter. The output voltage of the power supply can be disconnected from and reapplied to the load rapidly. Therefore the power supply is suitable for a load having frequent short circuit such as ion source. The proposed scheme improves the performance, efficiency, and reliability and reduces the cost of the conventional power supply system for an ion beam acceleration.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.128-128
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• 2012

Korea institute of materials science (KIMS) has researched an anode layer linear ion source (ALIS) for various roll-to-roll treatment processes. The ALIS can be used to Ar ion beam (1~2 keV) treatment, and diamond-like carbon coating and so on. The treatment width of ALIS is 500 mm with a uniformity below 5 % (=(Max-min)/(Max+min)). We also demonstrate the status of development of ALIS in a roll-to-roll industry.

• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.190-195
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• 2011

Diamond-like carbon (DLC) has many outstanding properties such as low friction, high wear resistance and corrosion resistance. However, it is difficult to achieve enough adhesion on the metal substrates because of weak bonding between DLC film and the metal substrate. The purpose of this study is to enhance an adhesion of DLC film. For improving adhesion, the substrate was treated by active screen plasma nitriding before DLC film deposing. Nitrided substrates were investigated by Glow Discharge Spectrometer (GDS), Micro-Vickers Hardness. DLC films were deposited on several metals by linear ion source, and characteristics of the films were investigated using nano-indentation, Field Emission Scanning Electron Microscope (FESEM). The adhesion was measured by scratch tester. The adhesion of DLC films was increased when nitriding layer was formed before DLC deposition. Therefore, the adhesion of DLC film can be enhanced as increasing the hardness of materials.

• Korean Journal of Materials Research
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• v.17 no.10
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• pp.509-515
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• 2007

In order to fabricate adhesiveless 2-layer flexible copper clad laminate (FCCL) used for COF (chip on film) with high peel strength, polyimide (PI; Kapton-EN, $38\;{\mu}m$) surface was modified by reactive $O_2^+$ and $N_2O^+$ ion beam irradiation. 300 mm-long linear electron-Hall drift ion source was used for ion irradiation with ion current density (J) higher than $0.5\;mA/cm^2$ and energy lower than 200 eV. By vacuum web coating process, PI surface was modified by linear ion source and then 10-20 nm thick Ni-Cr and 200 nm thick Cu film were in-situ sputtered as a tie layer and seed layer, respectively. Above this sputtered layer, another $8-9{\mu}m$ thick Cu layer was grown by electroplating and subsequently acid and base resistance and thermal stability were tested for examining the change of peel strength. Peel strength for the FCCLs treated by both $O_2^+$ and $N_2O^+$ ion irradiation showed similar magnitudes and increased as the thickness of tie layer increased. FCCL with Cu (200 nm)/Ni-Cr (20 nm)/PI structure irradiated with $N_2O^+$ at $1{\times}10^{16}/cm^2$ ion fluence was proved to have a strong peel strength of 0.73 kgf/cm for as-received and 0.34 kgf/cm after thermal test.

• Journal of the Korean Vacuum Society
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• v.6 no.S1
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• pp.110-114
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• 1997

Development of metal ion source growth of high quality Cu metal film formation of non-stoichiometric $SnO_2$ films of Si(100), and modification fo polymer surface by low enregy ion beam have been carried out at KIST Ion Beam Lab. A new metal ion source with high ion beam flux has been developed by a hybrid ion beam (HIB) deposition and non-stoichiometric $SnO_2$ films are controlled by supplying energy. The ion assisted reaction (IAR) in which keV ion beam is irradiated in reactive gas environment has been deveolped for modifying the polymers and enhancing adhesion to other materials and advantages of the IAR have been reviewed.

• Applied Science and Convergence Technology
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• v.23 no.6
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• pp.357-365
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• 2014

A non-invasive method for ion energy distribution measurement at a RF biased surface is proposed for monitoring the property of ion bombardments in capacitively coupled plasma sources. To obtain the ion energy distribution, the measured electrode voltage is analyzed based on the circuit model which is developed with the linearized sheath capacitance on the assumption that the RF driven sheath behaves like a simple diode for a bias power whose frequency is much lower than the ion plasma frequency. The method is verified by comparing the ion energy distribution function obtained from the proposed model with the experimental result taken from the ion energy analyzer in a dual cathode capacitively coupled plasma source driven by a 100 MHz source power and a 400 kHz bias power.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.4
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• pp.324-329
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• 2000

We investigated the effect of hydrogen ion beam on the formation of DLC thin film, which is deposited on the Si substrate with negative carbon ion by $Cs^+$ ion sputtering and positive hydrogen ion by Kauffmann type ion source. The amount of hydrogen in the DLC films increased as increasing hydrogen gas flow rate from 0 sccm to 12 sccm. As increasing hydrogen flow rate, $sp^2$bonding structure increased. The reason is that the hydrogen ions have relatively high energy, although total amount of hydrogen is very small compared with that of CVD process. These results suggest that the physical energy transfer plays a dominant role on the formation of DLC film.

• Proceedings of the KIEE Conference
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• 1997.07e
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• pp.1752-1754
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• 1997

The Kaufman type ion beam source with focusing lens was prepared to measure $\gamma$-coefficient of MgO thin film. Initial discharge of the system was started with the discharge voltage of 25V, the cathode filament current of 5.5A at the constant magnetic field of 150G. The system shows the maximum ion current density of $120{\mu}A/cm^2$, energy dispersion of 200eV and beam divergence of $30^{\circ}$ under the condition of Ar gas pressure $2.5{\times}10^{-4}Torr$, the beam voltage of 500V, the discharge voltage of 90V, the accelerator voltage of -200V and the cathode filament current of 6.1A. When the focusing lens was installed onto the ion beam source, the spreadness diameter of ion beam was about 10mm.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.9 no.1
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• pp.106-113
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• 2010

The most suitable condition for plasma source ion implantation(PSII) was found based on the study of the characteristics of PSIIed tool and machined surfaces. The depth analysis according to the chemical bonding state of elements and surface component elements through the XPS and SIMS, was conducted to find the improved property of the PSIIed surface. Due to the diffusion of PSII, the nitrogen was found up to a depth of about 150nm according to the supplied voltage and ion implanted time. The deep diffusion by nitrogen caused the surface modification, but the formation of oxide component was found due to the residual gas contamination on the surface. Statistical method of ANOVA was conducted to find the effects of spindle speed and feed rate in interaction for machined surface roughness with PSIIed tools. The surface modification was found largely occurred by the nitrogen implanted surface with 2 hours for 27kV, 35kV and 43kV.