• Title/Summary/Keyword: Ion Source

검색결과 969건 처리시간 0.035초

Beta 방사선원을 이용한 정전기 제거법에 대한 고찰 (A study on the elimination of static electricity by use of beta radiation source)

  • 임용규
    • 전기의세계
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    • 제14권3호
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    • pp.28-33
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    • 1965
  • This experiment is based on "the feasible improvement studies for an eliminating device of the static electricity which applies the ionizing effect of beta radiation." In order to accomplish this object, the following problems were necessarily considered to investigate and to determine. The efficiency of the elimination of static electricity was determined by means of measuring the ion current between electrically charged plates with micro-ammeter. The effects of various factors, i.e., the distance between charged plate and radiation source, the activity of radiation source, the electric otential and the area of the charged plate, the shape of the source housing, the lining of backscattering material (Pb) on the source housing surface and blowing of ionized air, on the static electricity eliminating efficiency were studied. The beta radiation sources used in this experiment were S$^{35}$ and Sr$^{90}$ -Y$^{90}$ . It was revealed that ion current increased with source activity, the electric potential and area of the plates, the lead (Pb) lining on the surface of the source housing and the velocity of the ionized air blowing. As one could expect the S$^{35}$ was more effective to increase the ion current since it is known to be a higher specific ionization source than Sr$^{90}$ -Y$^{90}$ . The detailed result and performance of the eliminating device of the static electricity are described here.ibed here.

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Understanding Ion Pump Emissions : Classification, Source Identification and Elimination of Emissions from Ion Pumps

  • Wynohrad, Tony
    • Applied Science and Convergence Technology
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    • 제23권6호
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    • pp.340-344
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    • 2014
  • Ion pumps continue to be a staple in ultra-high vacuum (UHV) applications. Since their adoption as a primary UHV pump in the 1960's, it has been known that a variety of particles can emanate from within the ion pump and cause undesirable effects on current measurements and optics components. Historically the solution has been baffling and shielding which results in longer conductance paths to the ion pump. Those solutions can work, but require a larger pump and more vacuum plumbing to compensate for conductance losses. The first step was to fully understand the nature of the particles and their charges. Once those were characterized options for emissions reduction were evaluated. It was determined that an efficient design of shielding near the source of the particle generation site was the most cost effective solution. With a slight modification to the chamber of a small ion pump, internal shielding was developed that reduced the emissions by a factor of up to 1000 times.

ECR Reactor 내의 Langmuir Probe 시뮬레이션 (Simulation of a Langmuir Probe in an ECR Reactor)

  • 김훈
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1994년도 하계학술대회 논문집 C
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    • pp.1609-1611
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    • 1994
  • In ECR and helicon reactors for plasma processing, a high density plasma is generated in a source region which is connected to a diffusion region where the processing takes place. Large density and potential gradients can develop at the orifice of the source which drive ion currents into the diffusion region. The average ion velocity may become the order of the sound velocity. Measurements of the ion saturation current to a Langmuir probe are used as a standard method of determining the plasma density in laboratory discharges. However, the analysis becomes difficult in a steaming plasma. We have used the HAMLET plasma simulator to simulate the ion flow to a large langmuir probe in an ECR plasma. The collection surface was aligned with the Held upstream, normal to the field, and downstream. ion trajectories through the electric and magnetic fields were calculated including ion-neutral collisions. We examines the ratio of ion current density to plasma density as a function of magnetic field and pressure.

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Single Cell Li-ion 전지 충전 IC (Single Cell Li-ion Battery Charger)

  • 이락현;김준식;박시홍
    • 한국전기전자재료학회논문지
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    • 제22권7호
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    • pp.576-579
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    • 2009
  • This paper suggests a autonomous linear Li-ion battery charger which can safely distribute power between an external power source(AC adapter, auto adapter, or USB source), battery, and the system load. Depending on an external power source's capability, the charger selects proper charging-mode automatically. The charger IC designed and fabricated on Dongbu HITEC's $0.35{\mu}m$ BCD process with layers of one poly and three metals.

Single Cell Li-ion 전지 충전 IC (A Single Cell Li-ion Battery Charger)

  • 이락현;김준식;박시홍
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2009년도 춘계학술대회 논문집
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    • pp.27-28
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    • 2009
  • This paper suggests a autonomous linear Li-ion battery charger which can safely distribute power between an external power source(AC adapter, auto adapter, or USB source), battery, and the system load. Depending on an external power source's capability, the charger selects proper charging-mode automatically. The charger IC designed and fabricated on Dongbu HITEC's $0.35{\mu}m$ BCD process with layers of one poly and three metals.

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A Multi-megawatt Long Pulse Ion Source of Neutral Beam Injector for the KSTAR

  • Chang, Doo-Hee;Seo, Chang-Seog;Jeong, Seung-Ho;Oh, Byung-Hoon;Lee, Kwang-Won;Kim, Jin-Choon
    • 한국원자력학회:학술대회논문집
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    • 한국원자력학회 2004년도 추계학술발표회 발표논문집
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    • pp.719-720
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    • 2004
  • A multi-megawatt long pulse ion source (LPIS) of neutral beam injector was developed for the KSTAR. Beam extraction experiments of the LPIS were carried out at the neutral beam test stand (NBTS). Design requirements for the ion source were 120 kV/65 A deuterium beam and a 300 s pulse length. A maximum ion density of $9.1310^{11}$ $cm^{-3}$ was measured by using electric probes, and an optimum arc efficiency of 0.46 A/kW was estimated with ion saturation current of the probes, arc power, and total beam area. An arcing problem, caused by the structural defect of decelerating grid supporter, in the third gap was solved by the blocking of backstream ion particles, originated from the plasma in the neutralizer duct, through the unnecessary spaces on the side of grid supporter. A maximum drain power of 1.5 MW (i.e. 70 kV/21 A) with hydrogen was measured for a pulse duration of 0.5 s. Optimum beam perveance was ranged from 0.75 to 0.85. An improved design of accelerator for the effective control of beam particle trajectory should provide higher beam perveance.

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산화막 식각 기구 연구를 위한 QMF Ion Beam 장치의 제작 (QMF Ion Beam System Development for Oxide Etching Mechanism Study)

  • 주정훈
    • 한국표면공학회지
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    • 제37권4호
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    • pp.220-225
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    • 2004
  • A new ion beam extraction system is designed using a simple ion mass filter and a micro mass balance and a QMS based detecting system. A quadrupole Mass Filter is used for selective ion beam formation from inductively coupled high density plasma sources with appropriate electrostatic lens and final analyzing QMS. Also a quartz crystal microbalance is set between a QMF and a QMS to measure the etching and polymerization rate of the mass selected ion beam. An inductively coupled plasma was used as a ion/radical source which had an electron temperature of 4-8 eV and electron density of $4${\times}$10^{11}$#/㎤. A computer interfaced system through 12bit AD-DA board can control the pass ion mass of the qmf by setting RF/DC voltage ratio applied to the quadrupoles so that time modulation of pass ion's mass is possible. So the direct measurements of ion - surface chemistry can be possible in a resolution of $1\AA$/sec based on the qcm's sensitivity. A full set of driving software and hardware setting is successfully carried out to get fundamental plasma information of the ICP source and analysed $Ar^{+}$ beam was detected at the $2^{nd}$ QMS.

새로운 이온화된 클라스터 빔원의 제작과 특성 조사 (Investigation of New Ionized Cluster Beam Source)

  • 고석근;장홍규;정형진;최원국
    • 한국진공학회지
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    • 제5권3호
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    • pp.251-257
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    • 1996
  • The present paper the results of development of first experimental tests of a new ionized cluster beam (ICB) source. The novelty of ICB source lies in the fact that the crucible and ionization parts are spaced in one cylincrical shell but are not divided inan electric circuit. The ICB source adapts permanent mannets to increase the ionixation efficiency. The maximum obtained Cu+ ion current density I s1.5μA/㎠ 이었으며, 증착율이 초당 0.4Å일 때 이온화율은 3% 이었으며, 증착율이 초당 0.2Å일때는 이온화율이 6%이었다. 증착율이 초당 0.2Å이고, 가속전압이 4kV에서는 Cu+ 이온빔의 균일성이 95%이상이었다.

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효율적인 Source Head 개발에 관한 연구 (A Study on Development of Efficient Source Head)

  • 김귀정
    • 한국콘텐츠학회:학술대회논문집
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    • 한국콘텐츠학회 2007년도 추계 종합학술대회 논문집
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    • pp.865-868
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    • 2007
  • 본 연구는 이온주입(Ion Implanter)장비의 성능향상과 재현성 있는 Source Head를 개발하기 위한 방법이다. Source Head의 Life time이 부품 간 사용되는 Life time과 틀리기 때문에 보통 20일 정도 사용하고, 한번 Source Head를 재생하기 위해 교체되는 부품들도 고가일 뿐 만 아니라 50% 이상이 일회성으로 사용되고 있다. 본 개발에서는 원자의 유입방식을 공중 분산방식으로 적용함으로써 열전자의 손실로 발생하는 부분을 억제하는 효과와 Arc Chamber의 압력을 낮게 가지고 갈 수 있고 Chamber의 오염을 억제하는 효과를 얻을 수 있었다.

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CHARACTERIXATION OF PLASMA ION IMPLANTED SURFACES USING TIME-OF-FLIGHT SECONDARY ION MASS SPECTROMATRY

  • Lee, Yeon-Hee;Han, Seung-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon
    • 한국표면공학회지
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    • 제29권6호
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    • pp.880-883
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    • 1996
  • Plasma Source Ion Implantation (PSII) technique was used for the hydrophilization or hydrophobization of polymer surfaces. Polymers were modified with different plasma gases such as oxygen, nitrogen, argon, and tetrafluoromethane, and for varying lengths of treatment time. Plasma ion treatment of oxygen, nitrogen, argon and their mixtures increased significantly the hydrophilic properties of polymer surfaces. More hydrophobic surfaces of polymers were formed after the treatment with tetrafluoromethane. A study of plasma source ion implanted polymers was performed using contact angle measurements and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). The TOF-SIMS spectra and depth profile were used to obtain the information about the treated surfaces of polymers. The permanence of this technique could be evaluated with respect to ageing time. The surfaces treated with PSII gave better stability than other surface modification methods.

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