• Journal of the Korean Society of Radiology
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• v.13 no.7
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• pp.925-932
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• 2019

In this paper, we developed optical dosimetry system with a plastic scintillator, a commercial 50 mm, f1.8 lens, and a commercial high-sensitivity CMOS (complementary metal-oxide semiconductor) camera. And, the correction processors of vignetting, geometrical distortion and scaling were established. Using the developed system, we can measured a percent depth dose, a beam profile and a dose linearity for 6 MV medical LINAC (Linear Accelerator). As results, the optically measured percent depth dose was well matched with the measured percent depth dose by ion-chamber within 2% tolerance. And the determined flatness was 2.8%. We concluded that the optical dosimetry system was sufficient for application of absorbed dose monitoring during radiation therapy.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.41-46
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• 2004

This study deals with the friction and wear characteristics of C-N coated spur gear. The PSII apparatus was built and a SCM415 test piece and test gear with steel substrate was treated with carbon nitrogen by this apparatus. The composition and structure of the surface layer were analyzed and compared with that of PVD coated TiN layer. It was found that both of friction coefficients of C-N coating and TiN coaling decreased with increasing load, however, C-N coating showed relatively lower friction coefficient than that of TiN coating. We was investigated the effect of C-N coating on hardness, friction and wear. The TiN coated gear showed more serious friction phenomena than that of C-N coated gear. It was considered that coating of TiN, which was conducted at a vacuum chamber at about $500^{\circ}C$ results in a tempering of base material that causes microstructure change, which in turn resulted in decreasing of hardness. The C-N coated gear and pinion had higher wear resistance that of TiN coated gear and pinion. C-N coating significantly improved the friction and wear resistance of the gear.

• Transactions on Electrical and Electronic Materials
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• v.4 no.3
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• pp.1-4
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• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1071-1074
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• 2002

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}Torr$. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$: and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.781-784
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• 2002

Adhesion phenomenon is more significant for smaller objects, because adhesional force is proportional to size of the objects while gravitational force is proportional to the third power of it. For the purpose of microassembly, theoretical understanding is required for the Adhesion phenomenon. Authors have developed a force measurement system in an ultra-high vacuum chamber of Auger electron spectroscopy. The force between arbitrary combination of materials can be measured at a pressure less than 100 nPa after and before Ar ion sputtering and chemical analysis for several atomic layers of the surface. The results are successfully interpreted with a theory of contact mechanics. Since surface energy is quite important in the interpretation, electronic theory is used to evaluate the surface energy. In the manipulation of small objects, the adhesional force is always attractive. Repulsive force is essential for the manipulation. It can be generated by Coulomb interaction. The voltage required for detachment is theoretically analyzed and the effect of boundary conditions on the detachment is obtained. The possibility and limitations of micro-manipulation using both the adhesion phenomenon and Coulomb interaction are theoretically clarified. Its applicability to nano-technology is found to be expected.

• 대한방사선방어학회:학술대회논문집
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• 2011.11a
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• pp.194-195
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• 2011

• Electrical & Electronic Materials
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• v.8 no.1
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• pp.90-94
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• 1995

Reactive Ion Etching(RIE) of Si$_{3}$N$_{4}$ in a CF$_{4}$/O$_{2}$ gas plasma exhibits such good anisotropic etching properties that it is widely employed in current VLSI technology. However, the RIE process can cause serious damage to the silicon surface under the Si$_{3}$N$_{4}$ layer. When an atmospheric pressure chemical vapor deposited(APCVD) SiO$_{2}$ layer is used as a etch-stop material for Si$_{3}$N$_{4}$, it seems inevitable to get a good etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$. Therefore, we have undertaken thorough study of the dependence of the etch rate of Si$_{3}$N$_{4}$ plasmas on $O_{2}$ dilution, RF power, and chamber pressure. The etch selectivity of Si$_{3}$N$_{4}$ with respect to SiO$_{2}$ has been obtained its value of 2.13 at the RF power of 150 W and the pressure of 110 mTorr in CF$_{4}$ gas plasma diluted with 25% $O_{2}$ by flow rate.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.34D no.3
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• pp.87-92
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• 1997

Inductively coupled Cl$_{2}$ plasma has been studied to etch Pt thin films, which hardly form volatile compound with any reactive gas at normal process temperature. Low etch rate and residue problems are frequently observed. For higher etch rate, high density plasma and higher process temperature is adopted observed. For higher etch rate, high density plasma and higher process temperature is adopted and thus SiO$_{2}$ is used as for patterning mask instead of photoresist. The effect of O$_{2}$ or Ar addition to Cl$_{2}$ was investigated, and the chamber pressure, gas flow rate, surce RF power and bias RF power are also varied to check their effects on etch rate and selectivity. The major etching mechanism is the physical sputtering, but the ion assisted chemical raction is also found to be a big factor. The proposs can be optimized to obtain the etch rate of Pt up to 200nm/min and selectivity to SiO$_{2}$ at 2.0 or more. Patterning of submicron Pt lines are successfully demonstrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.278-280
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• 2001

BSCCO thin films have been fabricated by co-deposition at an ultralow growth rate using ion beam sputtering(IBS) method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure($PO_3$) in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $PO_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Proceedings of the Korea Contents Association Conference
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• 2014.11a
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• pp.233-234
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• 2014

하지전신계측검사(low extremity teleography)에서 자세 변화에 따른 중요장기의 방사선량을 측정하고 영상을 비교 분석하여 검사방법에 따른 유용성을 알아보고자 하였다. 대상은 하지전신계측검사를 시행한 성인남자 10명을 대상하였고 촬영조건은 관전압 73 kVp, 관전류량 32 mAs, SID 180 cm로 설정하였다. 방사선량 측정은 란도 팬텀을 이용하여 수정체, 갑상선, 생식선 부위에 유리선량계(ion chamber)를 부착한 후 전후방향자세와 후전방향자세를 각각 5번씩 시행하여 부위별로 방사선량을 측정한 후 Paired T-test로 비교 분석 하였다. 영상평가는 전후방향자세와 후전방향자세를 시행한 영상을 blind test를 실시하여 5점 척도로 평가하였다. 결과적으로 전후방향자세검사에 비해 후전방향자세검사가 수정체 약 6%, 갑상선 약 6%, 생식선에 미치는 방사선량을 약 27% 감소시킬 수 있으며 영상평가에서도 두 그룹 간에 큰 차이가 없어, 하지전신계측검사에서 전후방향자세검사보다 후전방향자세검사가 유용할 것으로 사료된다.