• Transactions of the Korean Society of Machine Tool Engineers
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• v.14 no.1
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• pp.44-51
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• 2005

Material degradation is a multibillion-dollar problem which affects all the industries amongst others. The last decades have seen the development of newer and more effective techniques such as Focused-ion beam(FIB), Transmission electron microscopy(TEM), Secondary-ion mass spectroscopy(SIMS), auger electron spectroscopy(AES), X-ray Photoelectron spectroscopy(XPS) , Electrochemical impedance spectroscopy(EIS), Photo- stimulated luminescence spectroscopy(PSLS), etc. to study various forms of material degradation. These techniques are now used routinely to obtain information on the chemical state, depth profiling, composition, stress state, etc. to understand the degradation behavior. This paper describes the use of these techniques specifically applied to materials degradation and failure analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.545-545
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• 2012

집속이온빔장치(FIB: Focused Ion Beam System)에 사용하는 액체금속이온원(LMIS: Liquid Metal Ion Source)은 고 전류밀도, 고 휘도, 낮은 에너지퍼짐 등 많은 장점이 있다. 집속이온빔장치는 주로 표면 분석, 집적 회로의 수정, 마스크 교정(Repair) 및 잘못된 부분의 분석(Failure Analysis) 등에 사용되고 있는데 최근에는 고 분해능의 이온빔 리소그래피와 이온 주입의 기술 및 미세가공 기술 등의 분야에 집중되고 있으며 이를 위해서는 집속이온빔장치의 수렴성(Convergence)을 개선해 나가는 것이 중요하다. 집속이온빔장치의 수렴성은 이온빔의 에너지 퍼짐(Energy Spread)과 각 분포(Angular Distribution)에 많은 영향을 받으며 에너지퍼짐 특성은 색수차에 직접적인 영향을 준다. 수렴성을 개선하기 위해 기존의 에미터(Emitter), 저장소(Reservoir), 추출극(Extractor)으로 제작된 액체금속이온원에 서프레서(Suppressor)라는 새로운 전극을 사용하여 이 전극의 유 무에 따른 각 분포의 변화에 대해 연구하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.845-848
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• 2007

Analysis of point defects invisible by a microscope has been studied on the a-Si thin film transistor panel. The point defects which were named Invisible Point Defect (IPD) is characterized by no particles or distortion of patterns on a pixel structure and randomly distributed on panels. To investigate the IPD, measurements were carried out: gray level driving, transistor transfer characteristic, focused ion beam (FIB), and secondary ion mass spectrometry (SIMS). The results showed that a contamination layer had a bad influence on an active surface. The contamination layer consisted of oxygen and iron from a water supply line during cleaning process. After the process tuning, IPD has been stabilized.

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.205-209
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• 2001

Uniformly-doped silicon thin films were fabricated by ion beam sputter deposition. The thin films had four levels of copper dopant concentration ranging between 1 ${\times}$1019 and 1 ${\times}$ 1021 atoms/cm3 . Concentrations of Copper dopants were determined by the isotope dilution inductively coupled plasma mass spectrometry (ICP-MS) to provide certified reference data for the quantitative surface analysis by secondary ion mass spectrometry (SIMS). The copper-doped thin films were dissolved in a mixture of 1 M HF and 3 M HNO3 spiked with appropriate amounts of 65 Cu. For an accurate isotope ratio determination, both the detector dead time and the mass discrimination were appropriately corrected and isobaric interference from SiAr molecular ions was avoided by a careful sample pretreatment. An analyte recovery efficiency was obtained for the Cu spiked samples to evaluate accuracy of the method. Uncertainty of the determined copper concentrations, estimated following the EURACHEM Guide, was less than 4%, and detection limit of this method was 5.58 ${\times}$ 1016 atoms/cm3.

• Progress in Superconductivity and Cryogenics
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• v.17 no.3
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• pp.62-66
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• 2015

The cryostat is designed for the superconducting quadrupole magnets to be used in a heavy-ion accelerator facility. The main accelerator is superconducting linac, which can accelerate a $^{238}U$ beam to 200 MeV/u (Mega electron voltage per nucleon). The cryostat for the magnet employs an innovative design primarily driven by the requirement of the compactness, user-friendliness and reliability. Also, several ancillary requirements such as background field, space restriction due to the beam line and cryostat structure need technical attentions. The development of the cryostat for three quadrupole magnets in the in-flight fragmentation separator is presented in the paper. The concept of cryogenic design is reported and the amount of cryogenic load is estimated by a relevant analysis. The structure of the cryostat to endure the heavy iron yoke including three quadrupole magnets is presented. In addition, the design as well as the performance test of the support link for the cold mass is described.

• Journal of Electrical Engineering and information Science
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• v.3 no.1
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• pp.110-116
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• 1998

A single-crystalline epitaxial film of GaAs has been grown on Si using a gs assisted-ionized vapour beam eptaxial technique. The native oxide layer on the silicon substrate was removed at 550$^{\circ}C$ by use of an accelerated arsenic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at 550$^{\circ}C$. Transmission electron microscopy and electron diffraction data suggest that the GaAs layer is an epitaxially grown single-crystalline layer. The possibility of growing device quality GaAs on Si is able demonstrated through fabrication of GaAs MODFET on Si substrates.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.250-253
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• 1990

A single-crystalline epitaxial film of GaAs has been grown on Si using an ionized cluster beam technique. The native oxide layer on the silicon substrate was removed at $550^{\circ}C$ by use of an accelerated arsonic ion beam, instead of a high-temperature desorption. During the growth the substrate temperature was maintained at $550^{\circ}C$. Transmission electron microscopy and electron diffraction data suggest that the eats layer is an epitaxially grown single-crystalline layer.

• Transactions of Materials Processing
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• v.17 no.2
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• pp.91-96
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• 2008

The governing parameters affecting the fatigue properties have been investigated experimentally in the high carbon steel wires with 0.94 wt.%C. In order to find the crucial factors, the advanced analysis techniques such as optical 3-D profiler, focused ion beam(FIB) and transmission electron microscope(TEM) were used. The two-type steel wires with different drawing strain were fabricated. The fatigue properties were measured by hunter rotating beam tester, specially designed for thin-sized steel wires. It was found that the fatigue properties of the steel wires with high drawing strain was higher than that with other wires because of low residual stress and high adhesion condition of brass coating layer.

• Proceedings of the Korean Vacuum Society Conference
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• 1993.07a
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• pp.39-39
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• 1993

A finite element analysis and Monte Carlo method have been applied to calculate the ppressure pprofiles around the ppohang Light Source (ppLS) electron storage ring with the aim of ppredicting the pperformance of the vacuum system designed for the ppLS vacuum system. After ppropperly choosing the design pparameters, the ppressure distribution are calculated as a function of the integrated stored beam current [AmppHrs]. The effect of changes of the vacuum pparameters, such as installed ppumpping sppeeds and synchrotron radiation induced gas desorpption rates on the ppressure pprofile, is also studied. The results indicate that the use of lumpped non-evapporable getter ppumpps together with spputter ion ppumpps for ppumpping the ppLS down to the required ppressure is ppossible in the ppresence of synchrotron induced gas loads, after resonable beam cleaning time.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.259-265
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• 2006

We measured sputtering yield of RF $O_2-plasma$ treated MgO protective layer for AC-PDP(plasma display panel) using a Focused ion Beam System(FIB). A 10 kV acceleration voltage was applied. The sputtering yield of the untreated sample and the treated sample were 0.33 atoms/ion and 0.20 atoms/ion, respectively. The influence of the plasma-treatment of MgO thin film was characterized by XPS and AFM analysis. We observed that the binding energy of the O 1s spectra, the FWHM of O 1s spectra and the RMS(root-mean-square) of surface roughness decreased to 2.36 eV, 0.6167 eV and 0.32 nm, respectively.