• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• Transactions of the Korean Society of Automotive Engineers
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• v.25 no.1
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• pp.35-41
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• 2017

The use of engineering plastics in automotive components is increasing with the trend towards improving the car strength and reducing weight. Among the different choices of materials, engineering plastic emerged as the necessary material for achieving lower costs, reduced weight and improved production efficiency. To produce the automotive parts, it is important to predict defect and validation of injection molding prior to design. Injection molding analysis and structural analysis are widely applied as a part of the design process when developing automotive parts. Injection molding analysis, in particular, involves a highly complicated mechanism that requires deep knowledge of polymer properties as well as an analytic approach different from that used for a general isotropic material when the molded material is used as a structural material. This is because the parts made of polymer have pre-stress factors such as intrinsic deformation and residual stress. The most important factors for injection molded plastic products are injection molding condition and cavity design, taking into account ease of molding, mass production and application. Despite optimal injection molding conditions and cavity design, however, glass fiber orientation is critically linked to strength reduction. The application of injection molding and structural coupled analysis provides a low-cost solution for product molding and structural validation, all prior to the actual molding. The purpose of this study involves the validation, pre-study, and solution of defect in injection-molded polymer automotive parts using the simulation software for injection molding and structural coupled analysis. Finally, this thesis provides validation of an injection molding and structural coupled analytic mechanism that can demonstrate the effect of glass fiber orientation on mechanical strength. Design improvement ideas for the injection molded product of PPS (Poly Phenylene Sulfide)+40% glass fiber are also suggested.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.243-243
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• 2010

Low-temperature grown (LTG) InGaAs epilayers were grown by MBE technique for studying a correlation between terahertz (THz) emission and the intrinsic defects. The 1.2-um-thick Be-compensated LTG-InGaAs epilayers were prepared on SI-InP:Fe substrate at $200-250^{\circ}C$, and subsequently in-situ annealed under As environment at $550^{\circ}C$ for 5-30 minutes. The carrier concentration/mobility and the crystalline structure were analyzed by the Hall effect and the x-ray diffraction (XRD), respectively, and the carrier lifetime were determined by the fs time-resolved pump-probe spectroscopy. THz generation from LTG-InGaAs was carried out by a Ti-sapphire laser (800 nm) of a pulse width of 190 fs at a repetition of 76 MHz. Figure shows the spectral amplitude of generated waves in the THz region. As the growth temperature of epilayer increases, the amplitude is enhanced. However, two samples grown at $200^{\circ}C$, as-grown and annealed, show almost no difference in the spectral amplitude. This suggests that the growth temperature is critical in the formation of defect states involved in THz emission. We are now investigating the correlations between the XRD band attributed to defects, the Hall parameter, and the spectral amplitude of generated THz wave.

• Korean Journal of Head & Neck Oncology
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• v.27 no.1
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• pp.27-31
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• 2011

Purpose : Anterolateral thigh and radial forearm flap is the most important fasciocutaneous flap widely used for reconstruction of tongue. One important purpose of flap is replacing the volume of tongue but still there is no data about the surface area and volume to be reconstructed after glossectomy. In this paper, surface area and volume is estimated from the 3-dimensionally reconstructed MRI images to see which flap is more ideal and to give the reference value for reconstruction. Materials and Methods : With coronal MRI image, tongue including only the intrinsic muscle is delineated in every section and reconstructed 3-dimensionally and calculated the volume and surface area to be reconstructed according to the degree of glossectomy. This volume and surface area was compared with the volume of anterolateral thigh and radial forearm flap. Results : The volume and surface area to be reconstructed in hemiglossectomy was $39.0{\pm}4.0cm^3$ and $31.8{\pm}2.7cm^2$ respectively. The average thickness of anterolateral thigh flap is $9.4{\pm}2.8mm$ and that of radial forearm is $3.8{\pm}1.0mm$. Comparing the curve of tongue surface area and volume with the volume of flap, the anterolateral thigh flap has more ideal volume to replace the defect. Conclusions : The surface area and volume requested for reconstruction could be suggested and the anterolateral thigh flap has more ideal volume for reconstruction of glossectomy defect.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.199-199
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• 2011

Recently, Thin film transistors (TFTs) with amorphous oxide semiconductors (AOSs) can offer an important aspect for next generation displays with high mobility. Several oxide semiconductor such as ZnO, $SnO_2$ and InGaZnO have been extensively researched. Especially, as a well-known binary metal oxide, tin oxide ($SnO_2$), usually acts as n-type semiconductor with a wide band gap of 3.6eV. Over the past several decades intensive research activities have been conducted on $SnO_2$ in the bulk, thin film and nanostructure forms due to its interesting electrical properties making it a promising material for applications in solar cells, flat panel displays, and light emitting devices. But, its application to the active channel of TFTs have been limited due to the difficulties in controlling the electron density and n-type of operation with depletion mode. In this study, we fabricated staggered bottom-gate structure $SnO_2$-TFTs and patterned channel layer used a shadow mask. Then we compare to the performance intrinsic $SnO_2$-TFTs and doping hafnium $SnO_2$-TFTs. As a result, we suggest that can be control the defect formation of $SnO_2$-TFTs by doping hafnium. The hafnium element into the $SnO_2$ thin-films maybe acts to control the carrier concentration by suppressing carrier generation via oxygen vacancy formation. Furthermore, it can be also control the mobility. And bias stability of $SnO_2$-TFTs is improvement using doping hafnium. Enhancement of device stability was attributed to the reduced defect in channel layer or interface. In order to verify this effect, we employed to measure activation energy that can be explained by the thermal activation process of the subthreshold drain current.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.50-50
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• 2008

ZnO has been extensively studied for optoelectronic applications such as blue and ultraviolet (UV) light emitters and detectors, because it has a wide band gap (3.37 eV) anda large exciton binding energy of ~60 meV over GaN (~26 meV). However, the fabrication of the light emitting devices using ZnO homojunctions is suffered from the lack of reproducibility of the p-type ZnO with high hall concentration and mobility. Thus, the ZnO-based p-n heterojunction light emitting diode (LED) using p-Si and p-GaN would be expected to exhibit stable device performance compared to the homojunction LED. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducibleavailability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices with low defect density. However, the electroluminescence (EL) of the device using n-ZnO/p-GaN heterojunctions shows the blue and greenish emissions, which are attributed to the emission from the p-GaN and deep-level defects. In this work, the n-ZnO:Ga/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated at different growth temperatures and carrier concentrations in the n-type region. The effects of the growth temperature and carrier concentration on the electrical and emission properties were investigated. The I-V and the EL results showed that the device performance of the heterostructure LEDs, such as turn-on voltage and true ultraviolet emission, developed through the insertion of a thin intrinsic layer between n-ZnO:Ga and p-GaN:Mg. This observation was attributed to a lowering of the energy barriers for the supply of electrons and holes into intrinsic ZnO, and recombination in the intrinsic ZnO with the absence of deep level emission.

• Journal of the Korean Chemical Society
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• v.31 no.5
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• pp.406-412
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• 1987

The electrical conductivities of ${\alpha}-Fe_2O_3$ containing 2.5 and 5.0mol% of cadmium were measured from 300 to $900^{\circ}C$ under oxygen pressures of 10$^{-7}$ to 10$^{-1}$ atmosphere. Plots of log ${\sigma}$ vs. 10$^3$/T show the extrinsic conductivity at oxygen pressure higher than $5{\times}10$^{-2}$atm. The transition points appear at about 550$^{\circ}$C and the activation energies are 1.34 eV for the intrinsic region and 0.50 eV for the extrinsic region on 5mol% Cd-doped ${\alpha}-Fe_2O_3$. The extrinsic conductivity disappears at oxygen partial pressures lower than $5{\times}10$^{-2}$ atm, and the intrinsic conductivity predominates. The electrical conductivities decrease with increasing mol% of cadmium doped. The predominant defect of ${\alpha}-Fe_2O_3$ doped with Cd is believed to be Fe${2+}$ interstitial for the intrinsic, however, oxygen vacancy predominates for the extrinsic region. The electrical conduction mechanisms are proposed and the conduction band model is suggested for the extrinsic region.

• Transactions on Electrical and Electronic Materials
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• v.15 no.4
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• pp.207-212
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• 2014

Aluminum-doped zinc oxide (AZO) films were deposited on SiOC/Si wafer by an RF-magnetron sputtering system, by varying the deposition parameters of radio frequency power from 50 to 200 W. To assess the correlation of the optical properties between the substrate and AZO thin film, photoluminescence was measured, and the origin of deep level emission of AZO thin films grown on SiOC/Si wafer was studied. AZO formed on SiOC/Si substrates exhibited ultraviolet emission due to exciton recombination, and the visible emission was associated with intrinsic and extrinsic defects. For the AZO thin film deposited on SiOC at low RF-power, the deep level emission near the UV region is attributed to an increase of the variations of defects related to the AZO and SiOC layers. The applied RF-power influenced an energy gap of localized trap state produced from the defects, and the gap increased at low RF power due to the formation of new defects across the AZO layer caused by lattice mismatch of the AZO and SiOC films. The optical properties of AZO films on amorphous SiOC compared with those of AZO film on Si were considerably improved by reducing the roughness of the surface with low surface ionization energy, and by solving the problem of structural mismatch with the AZO film and Si wafer.

• BMB Reports
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• v.53 no.9
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• pp.472-477
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• 2020

Osteoclasts are hematopoietic-derived cells that resorb bone. They are required to maintain proper bone homeostasis and skeletal strength. Although osteoclast differentiation depends on receptor activator of NF-κB ligand (RANKL) stimulation, additional molecules further contribute to osteoclast maturation. Here, we demonstrate that protocadherin-7 (Pcdh7) regulates formation of multinucleated osteoclasts and contributes to maintenance of bone homeostasis. We found that Pcdh7 expression is induced by RANKL stimulation, and that RNAi-mediated knockdown of Pcdh7 resulted in impaired formation of osteoclasts. We generated Pcdh7-deficient mice and found increased bone mass due to decreased bone resorption but without any defect in bone formation. Using an in vitro culture system, it was revealed that formation of multinucleated osteoclasts is impaired in Pcdh7-deficient cultures, while no apparent defects were observed in differentiation and function of Pcdh7-deficient osteoblasts. Taken together, these results reveal an osteoclast cell-intrinsic role for Pcdh7 in maintaining bone homeostasis.

• Journal of Arbitration Studies
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• v.29 no.4
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• pp.187-210
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• 2019

This article examines the necessity for the introduction of an ICSID Appellate System. In comparison with the WTO appellate system, the ICSID ad hoc Committee has a very limited mandate. An annulment inquiry under the ICSID arbitration system barely focuses on whether the arbitral decision resulted from a justifiable process. As long as there is procedural legitimacy, the resulting awards remain unaffected under the annulment procedure, irrespective of mistakes of fact or law. In contrast, in the WTO DSS the AB substantively reviews panel rulings and suggestions that are founded on any deficiency of objectivity or error in the interpretation of a particular WTO provision. This defect intrinsic in the annulment procedure could cause injustice to a party earnestly interested in correcting recognized misapplication of law by ICSID tribunals. Accordingly, the establishment of an appellate system would result in a more substantive and procedural review of awards. The creation of such an ICSID appellate system would ensure thorough scrutiny of the decisions of the tribunal of first instance, leading to better reasoned outcomes. This could lead to a crystallization of predictability in investment relations. The end result would be that fairness, clarity, reliability, and legality in the ICSID adjudicative process would be unassailable, to the advantage of all the contracting parties.