• 한국전기전자재료학회논문지
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• 제15권3호
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• pp.201-207
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• 2002

In this paper, we haute proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. New power BRTs have shown superior electrical characteristics including the snab-back effect and the forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with the intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of the BRT is the avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develop a super high voltage power device and it applies to another power device including IGBT, EST and etc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.243-246
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• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effict and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집
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• pp.243-246
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• 2001

In this paper, we have proposed a novel trench electrode Base Resistance Thyristor(BRT) and trench electrode BRT with a intrinsic region. A new power BRTs have shown superior electrical characteristics including snab-back effect and forward blocking voltage more than the conventional BRT. Especially, the trench electrode BRT with intrinsic region has obtained high blocking voltage of 1600V. The blocking voltage of conventional BRT is about 400V at the same size. Because the breakdown mechanism of BRT is avalanch breakdown by impact ionization, the trench electrode BRT with intrinsic region has suppressed impact ionization, effectively. If we use this principle, we can develope super high voltage power devices and applicate to another power devices including IGBT, EST and etc.

• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2009년도 학술논문요약집
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• pp.73-73
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• 2009

There are many factors to evaluate nuclear fuel cycle such as safety, public acceptance, economics, etc.. Transparency, proliferation, environment issues, public acceptance and safety are essential to expansion of nuclear industry and proliferation resistance is one of key constraints in the deployment of advanced nuclear energy systems. Proliferation resistance is being considered as one of the most important factors in assessing advanced and innovative nuclear systems. IAEA defmes proliferation resistance as characteristics of nuclear energy system that impedes the diversion or undeclared production of nuclear material [1]. Barriers to proliferation is consist of intrinsic and extrinsic barriers(institutional measures). Intrinsic barriers are characterized in material barriers and technical barriers in general. Material barriers is intrinsic, or inherent, qualities of materials that reduce the inherent desirability or attractiveness of the material as an explosive. Isotopic, chemical, radiological, mass and bulk, detectability barriers are considered as material barriers attributes [2]. Proliferation resistance is examined for several nuclear fuel cycles based on previous study which is focused on the intrinsic barriers [3-4]. Pyroprocessing and DUPIC are considered as reprocessing technologies in Korea and the PWR direct disposal is considered. Comparative assessments of the proliferation attributes and merits of different fuel cycle systems will be performed and the optimal back-end fuel cycle and strategy will be proposed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.232-232
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• 2010

Simulation Program (AFORS-HET 2.4.1) was used, include the basic structure of crystalline silicon thin film as above, under the intrinsic a-Si:H films bonded symmetrical structure (Symmetrical structure) were used. The structure of ITO, a-Si p-type, intrinsic a-Si, c-Si, intrinsic a-Si, a-Si n-type, metal (Al) layer has one of the seven. When thickness for each layer was given the change, the changes of a-Si p-type layer and the intrinsic a-Si layer on top had an impact on efficiency. Efficiency ratio of p-type a-Si:H layer thickness was sensitive to, especially a-Si: H layer thickness is increased in a rapid decrease in Jsc and FF, and efficiency was also decreased.

• 한국전기전자재료학회논문지
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• 제24권11호
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• pp.855-858
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• 2011

In this paper, in order to suppress unwanted current paths originating from adjacent cells in a passive crossbar array based on resistive random access memory (RRAM) without extrinsic switching devices, 1-diode type RRAM which consists of a 0.2% chromium-doped strontium titanate (Cr-$SrTiO_3$) film deposited on a silicon substrate, was proposed for high packing density, and intrinsic rectifying characteristics from the current versus voltage characteristics were successfully demonstrated.

• Journal of Magnetics
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• 제1권1호
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• pp.19-23
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• 1996

In the present study, the $Sm_2Fe_{17}N_x$-type interstitial materials have been prepared by reaction between Nb-free or Nb-containing $Sm_2Fe_{17}$-type alloy and $N_2$ gas. Nitrogenation behaviour of the $Sm_2Fe_{17}N_x$-type material and disproportionation characteristics of the nitrogenated materials have been studied by means of differential thermal analysis (DTA) and thermopiezic analysis (TPA). Magnetic properties of the produced $Sm_2Fe_{17}N_x$-type interstitial materials were characterised in vibrating sample magnetometer (VSM) or thermomagnetic analyser (TMA). Epoxy-bonded or Zn-bonded $Sm_2Fe_{17}N_x$-type magnets were prepared, and their magnetic properties were investigated. It has been found that nitrogenation kinetics of the Sm2Fe17Nx-type alloy is improved significantly by the Nb-substitution for Fe in the alloy. The Nb-substitution is also found to enhance thermal stability of the $Sm_2Fe_{17}N_x$-type interstitial material. Hard magnetic properties of the interstitial materials produced from Nb-free orNb-containing alloy is high enough (intrinsic coercivity : over 7 kOe) for application as bonded permanent magnets. The good hard magnetic properties of the interstitial material are maintained in the epoxy-bonded magnet. Intrinsic coercivity of the Zn-bonded magnets is improved significantly as post-bonding annealing time increases.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2005년도 후기학술대회논문집
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• pp.228-229
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• 2005

The compressive residual stress, which is induced by shot peening process, has the effect of increasing the intrinsic fatigue strength of surface and therefore would be beneficial in reducing the probability of fatigue damage. However, it was not known that the effect of shot peening in corrosion environment. In this study, the effect of shot peening on corrosion fatigue crack growth of sping steel immersed in 6% $FeCl_3$ solution and corrosion characteristics with considering fracture mechanics. The results of the experimental study corrosion fatigue characteristics of spring steel are as follows; the fatigue crack growth rate of the shot peening material was lower than of the un peening material. And fatigue life shows more improvement in the shot peening material than un peening material. This is because the compressive residual stress of surface operate resistance of corrosion fatigue crack propagation. It is assumed that the shot peening process improve corrosive resistance and mechanical property.

• 한국기계가공학회지
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• 제17권6호
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• pp.1-6
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• 2018

Recently nano meter size pattern (sub-micro scale) can be machined mechanically using a diamond tool. Many studies have found a 'size effect' which referred to a specific cutting energy increase with the decrease in the uncut chip thickness at micro scale machining. A new analysis method was suggested in order to observe 'size effect' in nano scale machining and to verify the cause of the 'size effect' in this study. The diamond tool was indented to a vertical depth of 1,000nm depth in order to simplify the stress state and the normal force was measured continuously. The tip rounding was measured quantitatively by AFM. Based on the measurements and theoretical analysis, it was verified that the main cause of the 'size effect' in nano scale machining is geometrically necessary dislocations, one of the intrinsic material characteristics. st before tool failure.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.131-131
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility ($\sim900cm^2/Vs$). These electronic properties allow high breakdown voltage, high-speed switching capability, and high temperature operation compared to Si devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances, the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. This paper studies different channel dimensons ($L_{CH}$ : $0.5{\mu}m$, $1\;{\mu}m$, $1.5\;{\mu}m$) and their effect on the the device transient characteristics. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship. with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. We observe an increase in the turn-on and turn-off time with increasing the channel length. The switching time in 4H-SiC DMOSFETs have been found to be seriously affected by the various intrinsic parasitic components, such as gate-source capacitance and channel resistance. The intrinsic parasitic components relate to the delay time required for the carrier transit from source to drain. Therefore, improvement of switching speed in 4H-SiC DMOSFETs is essential to reduce the gate-source capacitance and channel resistance.