• Title/Summary/Keyword: Internal tin process

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The effect of local heating on superconductivities in internal tin processed Nb$_3Sn$ wires (내부 확산법에 의한 Nb$_3Sn$ 초전도 선재에서 부분 가열이 초전도 특성에 미치는 영향)

  • Ha, Dong-Woo;Oh, Sang-Soo;Ha, Hong-Soo;Lee, Nam-Jin;Kwon, Young-Kil;Ryu, Kang-Sik
    • Progress in Superconductivity and Cryogenics
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    • v.2 no.2
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    • pp.1-5
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    • 2000
  • There is the possibility that internal tin processed Nb$_3Sn$ wires are locally heated during the drawing process and the jacketing process. It is important to know the variations in J$_c$ of internal tin processed Nb$_3Sn$ wires caused by local heating. Internal tin processed Nb$_3Sn$ rods were cold worked to 2.28 mm, using the appropriate reduction ratio, and then cut into several pieces. At this stage, wires were locally 50 mm heat zone heated up to 360$^{\circ}C$. The locally heated Nb$_3Sn$ wires were drawn to a final diameter size of 0.81 mm. Others were cold worked successively to 0.81 mm and locally heated with the same conditions. 2 types of locally heat treated wires were wound on Ti-6Al-4V barrels and heat treated for the Nb$_3Sn$ reaction. Local heating of internal tin processed Nb$_3Sn$ wires after the J$_c$ of these wires. However, local heating at an intermediate stage of the drawing process caused a decrease in J$_c$. When the local heating temperatures were higher than melting point of Sn, non-Cu J$_c$'s decreased significantly. A Sn-Cu alloyed boundary appeared after local heating over the melting point of Sn, and caused work hardening and a decrease in the workability.

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Influence of Ge addition on phase formation and electromagnetic properties in internal tin processed $Nb_3$Sn wires (내부 확산법에 의한 $Nb_3$Sn초전도선에 Ge 첨가에 따른 임계전류 및 미세조직 변화)

  • 하동우;오상수;이남진;하홍수;권영길;류강식;백홍구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.496-499
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    • 2000
  • In order to investigate the effect of Ge addition to the Cu Matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt% Ge alloy were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240 h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$Sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$.

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Microstructure properties of internal tin processed Nb3Sn superconducting wires with pre-heating condition (내부확산법에 의한 Nb3Sn 초전도 선재의 예비 열처리 조건에 따른 미세조직 변화)

  • 하동우;오상수;하홍수;이남진;류강식;한일용;이준석
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 1999.02a
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    • pp.14-17
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    • 1999
  • Four designed $Nb_{3}$Sn superconductors have been fabricated in order to investigate the effect of pre-heat treatment for internal tin process. 3 types of sub-elements and 2 types of Sn reservers were fabricated. Diffusion of Sn is better in the strand divided Sn equally than in the strand had one large Sn reserver during pre heat-treatment.

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Influence of Ge addition on AC loss and micro-structure in $Nb_{3}Sn$ wires (Ge를 첨가한 Nb$_3$Sn 초전도 선에서의 교류손실 및 미세조직 변화)

  • 하도우;이남진;오상수;하홍수;송규정;권영길;류강식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.07a
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    • pp.104-107
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    • 2001
  • In order to investigate the effect of Ge addition to the Cu matrix on the microstructure and the critical current density, four kinds of internal tin processed Nb$_3$Sn strands with pure Cu and Cu 0.2, 0.4, 0.6 wt % Ge alloys were drawn to 0.8 mm diameter. The microstructure and critical current of internal tin processed Nb$_3$Sn wires that were heat treated at temperatures ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$ for 240h were investigated. The Ge addition to the matrix did not make workability worse. A Ge rich layer in the Cu-Ge matrix suppressed the growth of the Nb$_3$Sn layer and promoted grain coarsening. The greater the Ge content in the matrix, the lower the net Jc result after Nb$_3$sn reaction heat treatment. There was no significant variation in Jc observed with heat treatment temperature ranging from 68$0^{\circ}C$ to 74$0^{\circ}C$. The values of AC loss of Ge added wires were decreased to 40 % compare with no addition wire. Low AC loss was due to segregation of Ge rich layer in the Cu-Ge matrix. If Ge added wire with thin Nb filaments were fabricated, slow diffusion rate of Sn would be overcome and decreased AC loss that is weak Point of internal tin method.

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Superconducting properties of internal tin processed $Nb_3Sn$ superconducting wires (내부확산법으로 제조한 $Nb_3Sn$ 초전도 선재의 초전도 특성)

  • Ha, Dong-Woo;Oh, Sang-Soo;Ha, Hong-Soo;Lee, Nam-Jin;Ryu, Kang-Sik
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1556-1558
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    • 1999
  • $Nb_3Sn$ superconducting wires were fabricated in order to investigate the effect of pre-heat treatment for internal tin process. 2 types of Sn reservoir were fabricated. One was arranged one large Sn reservoir in the center of wire, the other arranged several Sn reservoirs inthe wire. Diffusion of Sn is better in the strand divided Sn equally than in the strand had one large Sn reservoir during pre heat-treatment. Critical current was better in the wires divided Sn reservoirs uniformly after whole heat treatment.

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The effect of local heating on superconductivities in internal tin Processed $Nb_{3}Sn$ wires (내부 확산법에 의한 $Nb_{3}Sn$ 초전도 선재에서 부분 가열이 초전도 특성에 미치는 영향)

  • Ha, Dong-Woo;Oh, Sang-Soo;Ha, Hong-Soo;Lee, Nam-Jin;Kwon, Young-Kil;Ryu, Kang-Sik
    • Proceedings of the KIEE Conference
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    • 1999.11d
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    • pp.876-878
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    • 1999
  • Internal tin processed Nb3Sn wires with different diameter were locally heated before reaction heat treatment. Local heating at the intermediate state of drawing process decreased the superconducting properties and workability. When the local heating temperatures were higher than melting point of Sn, non-Cu Jc's decreased significantly.

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Effect of Auxetic Structure of PVdF on Tin Anode Stability for Na-ion Batteries (소듐 이온전지용 주석 음극의 안정화를 위한 PVdF 옥세틱 구조의 영향)

  • Park, Jinsoo
    • Journal of Powder Materials
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    • v.25 no.6
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    • pp.507-513
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    • 2018
  • This study investigates the viability of using a Na-ion battery with a tin(Sn) anode to mitigate the vulnerability caused by volume changes during discharge and charge cycling. In general, the volume changes of carbon material do not cause any instability during intercalation into its layer structure. Sn has a high theoretical capacity of $847mAh\;g^{-1}$. However, it expands dramatically in the discharge process by alloying Na-Sn, placing the electrode under massive internal stress, and particularly straining the binder over the elastic limit. The repeating strain results in loss of active material and its electric contact, as well as capacity decrease. This paper expands the scope of fabrication of Na-ion batteries with Sn by fabricating the binder as an auxetic structure with a unique feature: a negative Poisson ratio (NPR), which increases the resistance to internal stress in the Na-Sn alloying/de-alloying processes. Electrochemical tests and micrograph images of auxetic and common binders are used to compare dimensional and structural differences. Results show that the capacity of an auxetic-structured Sn electrode is much larger than that of a Sn electrode with a common-structured binder. Furthermore, using an auxetic structured Sn electrode, stability in discharge and charge cycling is obtained.

Comparisons of internal self-field magnetic flux densities between recent Nb3Sn fusion magnet CICC cable designs

  • Kwon, S.P.
    • Progress in Superconductivity and Cryogenics
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    • v.18 no.3
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    • pp.10-20
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    • 2016
  • The Cable-In-Conduit-Conductor (CICC) for the ITER tokamak Central Solenoid (CS) has undergone design change since the first prototype conductor sample was tested in 2010. After tests showed that the performance of initial conductor samples degraded rapidly without stabilization, an alternate design with shorter sub-cable twist pitches was tested and discovered to satisfy performance requirements, namely that the minimum current sharing temperature ($T_{cs}$) remained above a given limit under DC bias. With consistent successful performance of ITER CS conductor CICC samples using the alternate design, an attempt is made here to revisit the internal electromagnetic properties of the CICC cable design to identify any correlation with conductor performance. Results of this study suggest that there may be a simple link between the $Nb_3Sn$ CICC internal self-field and its $T_{cs}$ performance. The study also suggests that an optimization process should exist that can further improve the performance of $Nb_3Sn$ based CICC.

Fabrication and properties of Nb$_3$Sn superconducting wire from large billet stage (대형 빌렛 제조에 의한 Nb$_3$Sn 초전도 선재의 가공 및 특성 연구)

  • 하동우;오상수;하홍수;이남진;권영길;류강식
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.806-809
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    • 2000
  • A key technology for achieving commercial Nb$_3$Sn superconducting wires may be driven from fabrication Process of big-scale billets. Sub-element billet with diameter of 200 mm was designed and fabricated. This billet was hot-extruded and drawn. Cu stabilizer tube, Nb barrier tube and 19 sub-elements inserted Sn core were composed for strand. There was no breakage in the strand that was constituted with annealed sub-element. It was need that billet had to treat HIP because of remove of voids and goad contact between Cu and Nb filaments. Ta wound sheet was better than Ta tube thor barrier in the strand. Ic of the Nb$_3$Sn wire at 127, 4.2K was over than 120 A.

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Electroplating process for the chip component external electrode

  • Lee, Jun-Ho
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2000.11a
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    • pp.1-2
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    • 2000
  • In chip plating, several parameters must be taken into consideration. Current density, solution concentration, pH, solution temperature, components volume, chip and media ratio, barrel geometrical shape were most likely found to have an effect to the process yields. The 3 types of barrels utilized in chip plating industry are the onventional rotating barrel, vibrational barrel(vibarrel), and the centrifugal type. Conventional rotating barrel is a close type and is commonly used. The components inside the barrel are circulated by the barrel's rotation at a horizontal axis. Process yield has known to have higher thickness deviation. The vibrational barrel is an open type which offers a wide exposure to electrolyte resulting to a stable thickness deviation. It rotates in a vertical axis coupled with multi-vibration action to facilitate mixed up and easy transportation of components. The centrifugal barrel has its plated work centrifugally compacted against the cathode ring for superior electrical contact with simultaneous rotary motion. This experiment has determined the effect of barrel vibration intensity to the plating thickness distribution. The procedures carried out in the experiment involved the overall plating process., cleaning, rinse, Nickel plating, Tin-Lead plating. Plating time was adjusted to meet the required specification. All other parameters were maintained constant. Two trials were performed to confirm the consistency of the result. The thickness data of the experiment conducted showed thatbthe average mean value obtained from higher vibrational intensity is nearer to the standard mean. The distribution curve shown has a narrower specification limits and it has a reduced variation around the target value. Generally, intensity control in vi-barrel facilitates mixed up and easy transportation of components. However, it is desirable to maintain an optimum vibration intensity to prevent solution intrusion into the chips' internal electrode. A cathodic reaction can occur in the interface of the external and internal electrode. 2H20 + e $\rightarrow$M/TEX> 20H + H2.. Hydrogen can penetrate into the body and create pressure which can cause cracks. At high intensity, the chip's motion becomes stronger, its contact between each other is delayed and so plating action is being controlled. However, the strong impact created by its collision can damage the external electrode's structure there by resulting to bad plating condition.

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