• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.172-173
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• 2012

Currently GaN based LED is known to show high internal or external efficiency at low current range. However, this LED operation occurs at high current range and in this range, a significant performance degradation known as 'efficiency droop' occurs. Auger process, carrier leakage process, field effect due to lattice mismatch and thermal effects have been discussed as the causes of loss of efficiency, and these phenomena are major hindrance in LED performance. In order to investigate the main effects of efficiency loss and overcome such effects, it is essential to obtain relative proportion of measurements of internal quantum efficiency (IQE) and various radiative and nonradiative recombination processes. Also, it is very important to obtain radiative and non-radiative recombination times in LEDs. In this research, we measured the IQE of InGaN/GaN multiple quantum wells (MQWs) LEDs with PSS and Planar substrate using modified ABC equation, and investigated the physical mechanism behind by analyzing the emission energy, full-width half maximum (FWHM) of the emission spectra, and carrier recombination dynamic by time-resolved electroluminescence (TREL) measurement using pulse current generator. The LED layer structures were grown on a c-plane sapphire substrate and the active region consists of five 30 ${\AA}$ thick In0.15Ga0.85N QWs. The dimension of the fabricated LED chip was $800um{\times}300um$. Fig. 1. is shown external quantum efficiency (EQE) of both samples. Peak efficiency of LED with PSS is 92% and peak efficiency of LED with planar substrate is 82%. We also confirm that droop of PSS sample is slightly larger than planar substrate sample. Fig. 2 is shown that analysis of relation between IQE and decay time with increasing current using TREL method.

• Ceramist
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• v.22 no.3
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• pp.218-229
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• 2019

The development of highly efficient thermally activated delayed fluorescence (TADF) materials is an active area of recent research in organic light emitting diodes (OLEDs) since the first report by Chihaya Adachi in 2011. Traditional fluorescent materials can harvest only singlet excitons, leading to the theoretically highest external quantum efficiency (EQE) of 5% with considering about 20% light out-coupling efficiency in the device. On the other hand, TADF materials can harvest both singlet and triplet excitons through reverse intersystem crossing (RISC) from triplet to singlet excited states. It could provide 100% internal quantum efficiencies (IQE), resulting in comparable high EQE to traditional rare-metal complexes (phosphorescent materials). Thanks to a lot of efforts in this field, many highly efficient TADF materials have been developed. This review focused on recent molecular design concept and optoelectronic properties of TADF materials for high efficiency and long lifetime OLED application.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.22-22
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• 2003

Studies on the optical properties related to the built-in internal field and the carrier localization present in various GaN-based structures are essential not only for the physical interest but in designing practical visible and ultraviolet light emitting device applications with better performance and quantum efficiency. We report on the optical characteristics of various dimensional GaN-based structures such as (i) GaN self-assembled quantum dots grown in Stranski-Krastanov mode (OD), vertically-aligned GaN nanorods (1D), graded-In-content InGaN quantum wells (2D), laterally-overgrown GaN pyramids (3D), and GaN epilayers grown on various substrates. We used a wide variety of optical techniques, such as photoluminescence (PL), PL excitation, micro-PL, cathodoluminescence, optically-pumped stimulated emission, and time-resolved PL spectroscopy. An overview and comparison of the optical characteristics of the above GaN-based structures will be given.

• Journal of the Optical Society of Korea
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• v.17 no.1
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• pp.16-21
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• 2013

In this paper, we report the effect of GaN/graded-composition AlGaInN/GaN quantum barriers in active regions on the electrical and optical properties of GaN-based vertical light emitting diodes (VLEDs). By modifying the aluminum composition profile within the AlGaInN quantum barrier, we have achieved improvements in the output power and the internal quantum efficiency (IQE) as compared to VLEDs using conventional GaN barriers. The forward voltages at 350 mA were calculated to be 3.5 and 4.0 V for VLEDs with GaN/graded-composition AlGaInN/GaN barriers and GaN barriers, respectively. The light-output power and IQE of VLEDs with GaN/graded-composition AlGaInN/GaN barriers were also increased by 4.3% and 9.51%, respectively, as compared to those with GaN barriers.

• Korean Journal of Materials Research
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• v.17 no.9
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• pp.489-492
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• 2007

Temperature and injection current dependence of elctroluminescence(EL) spectral intensity of the $In_{0.27}Ga_{0.73}N/GaN$ multi-quantum-well(MQW) have been studied over a wide temperature and as a function of injection current level. EL peaks also show significant broadening into higher photon energy region with the increase of injection current. This is explained by the band-filling effect. When temperature is slightly increased to 300 from 15 K, the EL emission peak showed red-blue-red shift. It can be explained by the carrier localization by potential fluctuation of multiple quantum well and band-gap shrinkage as temperature increase. It is found that a temperature-dependent variation pattern of the EL efficiency under very low and high injection currents show a drastic difference. This unique EL efficiency variation pattern with temperature and current is explained field effects due to the driving forward bias in presence of internal(piezo and spontaneous polarization) fields.

• Journal of the Optical Society of Korea
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• v.16 no.1
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• pp.53-56
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• 2012

We have developed a slab-type Nd:YAG gain module based on the techniques of conduction cooling and end pumping. The Nd:YAG slab is end-capped on both ends by undoped pure YAG and is pumped through the end-caps by stacked arrays of laser diode bars. The slab's surfaces of total internal reflection are in contact on both sides with microchannel cooling blocks which are cooled by water circulation. The power oscillator based on the gain module generates more than 400 W at 1-kW pumping with a slope efficiency of 55%. The small-signal gain of the gain module is 10 in a single zig-zag pass, and the amplified beam shows a near diffraction-limited beam quality.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.178-181
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• 2001

The organic light-emitting devices (OLEDs) based on fluorescence have low efficiencies due to the requirement of spin-symmetry conservation. By using the phosphorescent material, the internal quantum efficiency can reach 100 %, compared to 25 % in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, Ir(ppy)$_3$ (tris(2-phenylpyridine)iridium). The devices with a structure of ITO/TPD/Ir(PPy)$_3$ doped in the host material/BCP/Alq$_3$/Li:Al/Al were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of Ir(PPy)$_3$ and the host materials, we fabricated several devices and investigated the device characteristics.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.47-47
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• 2011

There have been numerous efforts to enhance the efficiency of light-emitting diodes (LEDs) by using low dimensional structures such as quantum dots (QDs), wire (QWRs), and wells (QWs). We demonstrate QD/QWR/QW hybrid structured LEDs by using nano-scaled pyramid structures of GaN with ~260 nm height. Photoluminescence (PL) showed three multi-peak spectra centered at around 535 nm, 600 nm, 665 nm for QWs, QWRs, and QDs, respectively. The QD emission survived at room temperature due to carrier localization, whereas the QW emission diminished from 10 K to 300 K. We confirmed that hybrid LEDs had zero-, one-, and two-dimensional behavior from a temperature-dependent time-resolved PL study. The radiative lifetime of the QDs was nearly constant over the temperature, while that of the QWs increased with increasing temperature, due to low dimensional behavior. Cathodoluminescence revealed spatial distributions of InGaN QDs, QWRs, and QWs on the vertices, edges, and sidewalls, respectively. We investigated the blue-shifted electroluminescence with increasing current due to the band-filling effect. The hybrid LEDs provided broad-band spectra with high internal quantum efficiency, and color-tunability for visible light-emitting sources.

• Journal of the Korean Applied Science and Technology
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• v.18 no.3
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• pp.186-190
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• 2001

By fabricating the organic light-emitting devices (OLEDs) based on phosphorescent material, the internal quantum efficiency can reach 100%, compared to 25% in the case of the fluorescent material. Thus, the phosphorescent OLEDs have recently been extensively studied and showed higher internal quantum efficiencies then the conventional OLEDs. In this study, we investigated the characteristics of the phosphorescent OLEDs, with the green emitting phosphor, $Ir(ppy)_{3}$, (tris(2-phenylpyridine)iridium). The devices with a structure of $ITO/TPD/Ir(ppy)_{3}$ doped in the host material $/BCP/Alq_{3}/Li:Al/Al$ were fabricated, and its electrical and optical characteristics were studied. By changing the doping concentration of $Ir(ppy)_{3}$, we fabricated several devices and investigated the device characteristics. OLEDs doped into BCP by 10% showed the best characteristics. For 10% doped OLEDs, the maximum luminance of was over 10000 $cd/m^{2}$, and the maximum power efficiency was 7.14 lm/W.

• Korean Journal of Optics and Photonics
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• v.7 no.3
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• pp.266-271
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• 1996

In this study the evaluation of RWG MQW-LD fabricated with our vertical LPE system has been carried out with measuring its optical characteristics. This laser diode operated in lateral single mode as designed, and it showed 77% of internal quantum efficiency, 18cm of internal loss and 5.5$\AA$/$^{\circ}C$ of the thermal characterictic of the lasing wavelength. From these results we conclude that the vertical LPE system are fairly good and it might he useful to fabricate MQW wafer for laser diode.