• Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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• v.8 no.1
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• pp.9-17
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• 2010

The LCC (Liquid Cadmium Cathode) structure to be developed for inhibiting the formation and growth of the uranium dendrite has been known as a key part in the electrowinning process for the simultaneous recovering of uranium and TRU (TRans Uranium) elements from spent fuels. A zinc-gallium (Zn-Ga) experimental system which is able to be functional in aqueous condition and normal temperature has been set up to observe the formation and growth phenomena of the metal dendrites on liquid cathode. The growth of the zinc dendrites on the gallium cathode and the performance of the existing stirrer type and pounder type cathode structure were observed. Although the mechanical strength of the dendrites appeared to be weak in the electrolyte and easily crashed by the various cathode structures, it was difficult to effectively submerge the dendrite into the bottom of the liquid cathode. Based on the results of the aqueous phase experiments, a lab-scale electrowinning experimental apparatus which are applicable to the development of LCC srtucture for the electrowinning process was established and the performance tests of the different types of LCC structure were conducted to prohibit the uranium dendrite growth on LCC surface. The experimental results of the stirrer type LCC structures have shown that they could not effectively remove the uranium dendrites growing at the inner side of the LCC crucible and the performances of the paddle and harrow type LCC structure were similar. Therefore a mesh type LCC structure was developed to push down the uranium dendrites to the bottom of the LCC crucible growing on the LCC surface and at the inner side of the crucible. From the experimental results for the performance test of the mesh type LCC structure, the uranium was recovered over 5 wt% in cadmium without the growth of uranium dendrites. After completion of the experiments, solid precipitates of the bottom of the LCC crucible were identified as an intermetallic compound (UCd11) by the chemical analysis.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.89-93
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• 2009

Amorphous $Ge_{1-x}Mn_x$ semiconductor thin films grown by low temperature vapor deposition were annealed, and their electrical and magnetic properties have been studied. The amorphous thin films were $1,000{\sim}5,000\;{\AA}$ thick. Amorphous $Ge_{1-x}Mn_x$ thin films were annealed at $300^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, $600^{\circ}C$ and $700^{\circ}C$ for 3 minutes in high vacuum chamber. X-ray diffraction analysis reveals that as-grown $Ge_{1-x}Mn_x$ semiconductor thin films are amorphous and are crystallized by annealing. Crystallization temperature of amorphous $Ge_{1-x}Mn_x$ semiconductor thin films varies with Mn concentration. Amorphous $Ge_{1-x}Mn_x$ thin films have p-type carriers and the carrier type is not changed during annealing, but the electrical resistivity increases with annealing temperature. Magnetization characteristics show that the as-grown amorphous $Ge_{1-x}Mn_x$ thin films are ferromagnetic and the Curie temperatures are around 130 K. Curie temperature and saturation magnetization of annealed $Ge_{1-x}Mn_x$ thin films increase with annealing temperature. Magnetization behavior and X-ray analysis implies that formation of ferromagnetic $Ge_3Mn_5$ phase causes the change of magnetic and electrical properties of annealed $Ge_{1-x}Mn_x$ thin films.