• Title/Summary/Keyword: Interlayer isolation system

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Design of Seismic Isolated Tall Building with High Aspect-Ratio

  • Kikuchi, Takeshi;Takeuchi, Toru;Fujimori, Satoru;Wada, Akira
    • International Journal of High-Rise Buildings
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    • v.3 no.1
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    • pp.1-8
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    • 2014
  • When seismic isolation system is applied to high aspect-ratio (height/wide-ratio) steel structures, there are several problems to be taken into consideration. One is lifting up tensile force on the isolation bearing by overturning moment caused by earthquake. Another is securing building stiffness to produce seismic isolation effects. Under these conditions, this paper reports the structural design of high-rise research building in the campus of Tokyo Institute of Technology. With the stepping-up system for the corner bearings, the narrow sides of single span framework are designed to concentrate the dead load as counter-weight for the tensile reaction under earthquake. Also we adopted concrete in-filled steel column and Mega-Bracing system covering four layers on north & south framework to secure the horizontal stiffness of the building.

Changes in Cobalt Adsorption Properties of Montmorillonite by Dehydration (탈수 작용에 따른 몬모릴로나이트의 코발트 흡착 특성 변화)

  • Yeongjun Jang;Yeongkyoo Kim
    • Korean Journal of Mineralogy and Petrology
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    • v.36 no.2
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    • pp.107-115
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    • 2023
  • Cobalt can be released into the natural environment as industrial waste from the alloying industry and as acid mine drainage, and it is also a radionuclide (60Co) that constitutes high-level radioactive waste. Smectite is a mineral that can be useful for adsorption and isolation of this element. In this study, Cheto-type montmorillonite (Cheto-MM), which is the source clays of The Clay Mineral Society (CMS) and already well-characterized, was used. The effect of the adsorption site affected by the presence of interlayer water on the adsorption of cobalt before and after dehydration by heating was evaluated and the adsorption mechanism of cobalt on Cheto-MM was studied by applying adsorption kinetics and adsorption isotherm models. The results showed that the adsorption characteristics changed with dehydration and subsequent shrinkage, and cobalt was found to be adsorbed at the edge of Cheto-MM for about 38% and adsorbed at the interlayer site for about 62%, suggesting that the cobalt adsorption of Cheto-MM is significantly influenced by the interlayer. By applying the adsorption kinetic models, the cobalt adsorption kinetics of Cheto-MM is explained by a pseudo-second-order model, and the concentration-dependent adsorption was best described by the Langmuir isotherm adsorption model. This study provides basic knowledge on the adsorption characteristic of cobalt on montmorillonite with different adsorption sites and is expected to be useful in predicting the adsorption behavior of smectite in high-level radioactive waste disposal sites in the future.

Correlation between Ceria abrasive accumulation on pad surface and Material Removal in Oxide CMP (산화막 CMP에서 세리아 입자의 패드 표면누적과 재료제거 관계)

  • Kim, Young-Jin;Park, Boum-Young;Jeong, Hae-Do
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.118-118
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    • 2008
  • The oxide CMP has been applied to interlayer dielectric(ILD) and shallow trench isolation (STI) in chip fabrication. Recently the slurry used in oxide CMP being changed from silica slurry to ceria (cerium dioxide) slurry particularly in STI CMP, because the material selectivity of ceria slurry is better than material selectivity of silica slurry. Moreover, the ceria slurry has good a planarization efficiency, compared with silica slurry. However ceria abrasives make a material removal rate too high at the region of wafer center. Then we focuses on why profile of material removal rate is convex. The material removal rate sharply increased to 3216 $\AA$/min by $4^{th}$ run without conditioning. After $4^{th}$ run, material removal rate converged. Furthermore, profile became more convex during 12 run. And average material removal rate decreased when conditioning process is added to end of CMP process. This is due to polishing mechanism of ceria. Then the ceria abrasive remains at the pad, in particular remains more at wafer center contacted region of pad. The field emission scanning electron microscopy (FE-SEM) images showed that the pad sample in the wafer center region has a more ceria abrasive than in wafer outer region. The energy dispersive X-ray spectrometer (EDX) verified the result that ceria abrasive is deposited and more at the region of wafer center. Therefore, this result may be expected as ceria abrasives on pad surface causing the convex profile of material removal rate.

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