• 제목/요약/키워드: Interfacial electronic structures

검색결과 35건 처리시간 0.029초

The interfaces between Alq3 and ZnO substrates with various orientations

  • 이정한;이연진
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.343-343
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    • 2011
  • ZnO has been introduced as one of the good candidates for next generation opto-electronics. Recently, ZnO is known to be suitable for the transparent electrode in organic solar cells and light emitting devices. The contact with n-type organic material has been studied due to the n-type properties of ZnO. However, the surface of ZnO has shown different electronic property with respect to its surface orientation. Therefore, it is presumed that there are differences in the interfacial electronic structures between organic materials and ZnO with different orientation. Therefore, it is required to classify the interfacial electronic structures according to the surface orientation of ZnO. In this study, we measured the interfacial electronic structures between the ZnO substrate having various orientations and a typical n-type organic material, tris-(8-hydroxyquinoline) aluminum (Alq3). In-situ x-ray and ultraviolet photoelectron spectroscopy measurements revealed the interfacial electronic structures. We found the changes in the electronic structures with respect to the orientation of ZnO substrate and it could be used to improve the contact between ZnO and Alq3.

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Interfacial electronic structures of metallic nanoparticles on bare- and functionalized-Au nanoisland templates, and on transition metal oxide supports

  • 손영구
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.348-348
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    • 2011
  • We present the interfacial electronic structures of electrodeposited Cu and Fe on bare and 1,4-phenylene diisocyanide (PDI)-functionalized Au nanoisland templates (NITs), and Au and Ag nanoparticles on transition metal oxide supports. Our discussion is based on the depth-profiling X-ray photoelectron spectroscopy (XPS) and scanning electron microscopy (SEM).

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In situ 광전자분광/역광전자분광 분석을 이용한 유기물 계면의 전자구조 연구 (In situ photoemission and inverse photoemission studies on the interfacial electronic structures of organic materials)

  • 이연진
    • 진공이야기
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    • 제2권2호
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    • pp.4-11
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    • 2015
  • 본 글에서는 광전자 분광 및 역광전자 분광을 이용한 유기분자 시스템의 전자구조 연구에 대하여 기술하였다. 다양한 유기물간의 계면 연구가 급속도로 늘어나고 있으며, 폴리머, 거대 분자 등 기존의 in situ 분석 방법으로 실험이 어려운 물질까지도 연구의 필요성이 늘어나고 있다. Electrospray 증착 방법이 이러한 새로운 물질들의 계면 전자구조 연구를 가능하게 할 수 있음을 살펴보았으며, 다양한 새로운 분석 기법들의 출현을 기대해 본다. 몇 가지 예에서 살펴본 바와 같이 전자구조는 소자 구동 특성을 직접적으로 지배하는 핵심적인 물리량이며, 전자구조의 이해를 통해 전자소자의 구동 원리, 성능 최적화 및 소자 특성 열화의 원인을 파악할 수 있다. 현재, 유기물 소자 관련 기술의 성숙도는 전자구조 분석과 같은 기초 연구 결과 없이는 더 이상 발전할 수 없는 정도에 이르러, 관련 분석 기술에 대한 수요가 더욱 늘어날 것으로 전망된다.

방사광 x-선 기법에 의한 다층형 Fe/Cr 자성박막의 계면확산 연구 (Interfacial Diffusion in Fe/Cr Magnetic Multilayers Studied by Synchrotron X-ray Techniques)

  • 조태식
    • 한국전기전자재료학회논문지
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    • 제17권2호
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    • pp.223-227
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    • 2004
  • We have studied the interfacial diffusion of Fe/Cr multilayers using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and high-resolution x-ray scattering. The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers increased with the Cr-layer thickness. The Fourier transform (FT) of EXAFS data clearly showed that the Fe atoms dominantly diffused into the stable Cr layers at the Fe/Cr interface. The results of high-resolution x-ray scattering supported the interfacial diffusion of Fe atoms. Out study revealed that the dominantly interfacial diffusion of Fe atoms into the Cr layers effects the interfacial roughness of the Fe/Cr multilayers.

Interfacial Electronic Structures of Poly[N-9''-hepta-decanyl-2,7-carbazole-alt- 5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] and [6,6]-phenyl C60 Butyric Acid Methyl Ester

  • Lee, Jung-Han;Seo, Jung-Hwa;Schlaf, Rudy;Kim, Kyoung-Joong;Yi, Yeon-Jin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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    • pp.277-277
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    • 2012
  • PCDTBT (Poly[N-9''-hepta-decanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)]) is an attractive material as a semiconducting polymer for organic thin film transistor (OTFT) and organic solar cell (OSC). High power conversion efficiency (~6%) under simulated AM 1.5G solar illumination of bulk-heterojunction solar cell with PCDTBT and [6,6]-phenyl C60 butyric acid methyl ester (PC61BM) blend was reported. In OSC, it is known that the band alignment at the interface between donor and acceptor is critical. Therefore, we studied the interfacial electronic structures of PCDTBT and PC61BM. The polymers are deposited by electro-spray on gold and In-situ x-ray and ultraviolet photoelectron spectroscopy measurements revealed the interfacial electronic structures. We obtained the energy level alignment between two materials and the different interface formation was observed with different deposition order.

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다층형 Fe/Cr 자성박막에서 계면확산의 방사광 x-선 연구 (Interfacial diffusion in Fe/Cr magnetic multilayers studied by synchrotron x-ray techniques)

  • 조태식;정지욱
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 춘계학술대회 논문집 초전도 자성체 연구회
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    • pp.84-87
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    • 2003
  • The interfacial diffusion in Fe/Cr/MgO(001) multilayers has been studied using synchrotron x-ray techniques, such as x-ray reflectivity, extended x-ray absorption fine structures (EXAFS), and anomalous x-ray scattering (AXS). The results of x-ray reflectivity indicated that the interfacial roughness of Fe/Cr multilayers with Cr-$4{\AA}$-thick was larger than that with Cr-$4{\AA}$-thick. The results of EXAFS indicated that the Fe element dominantly diffuse into the stable Cr layers at the Fe/Cr interface. The AXS was certified the existence of the interdiffused Fe element in the Cr layers. Our study revealed that the rough interface of the Fe/Cr multilayers was caused by the interfacia diffusion of Fe element into the Cr layers.

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High performance of inverted polymer solar cells

  • Lee, Hsin-Ying;Lee, Ching-Ting;Huang, Hung-Lin
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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    • pp.61.2-61.2
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    • 2015
  • In the past decades, green energy, such as solar energy, wind power, hydropower, biomass energy, geothermal energy, and so on, has been widely investigated and developed to solve energy shortage. Recently, organic solar cells have attracted much attention, because they have many advantages, including low-cost, flexibility, light weight, and easy fabrication [1-3]. Organic solar cells are as a potential candidate of the next generation solar cells. In this abstract, to improve the power conversion efficiency and the stability, the inverted polymer solar cells with various structures were developed [4-6]. The novel cell structures included the P3HT:PCBM inverted polymer solar cells with AZO nanorods array, with pentacene-doped active layer, and with extra P3HT interfacial layer and PCBM interfacial layer. These three difference structures could respectively improve the performance of the P3HT:PCBM inverted polymer solar cells. For the inverted polymer solar cells with AZO nanorods array as the electronic transportation layer, by using the nanorod structure, the improvement of carrier collection and carrier extraction capabilities could be expected due to an increase in contact area between the nanorod array and the active layer. For the inverted polymer solar cells with pentacene-doped active layer, the hole-electron mobility in the active layer could be balanced by doping pentacene contents. The active layer with the balanced hole-electron mobility could reduce the carrier recombination in the active layers to enhance the photocurrent of the resulting inverted polymer solar cells. For the inverted polymer solar cells with extra P3HT and PCBM interfacial layers, the extra PCBM and P3HT interfacial layers could respectively improve the electron transport and hole transport. The extra PCBM interfacial layer served another function was that led more P3HT moving to the top side of the absorption layer, which reduced the non-continuous pathways of P3HT. It indicated that the recombination centers could be further reduced in the absorption layer. The extra P3HT interfacial layer could let the hole be more easily transported to the MoO3 hole transport layer. The high performance of the novel P3HT:PCBM inverted polymer solar cells with various structures were obtained.

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Characterization of SOI Wafers Fabricated by a Modified Direct Bonding Technology

  • Kim, E.D.;Kim, S.C.;Park, J.M.;Kim, N.K.;Kostina, L.S.
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.47-51
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    • 2000
  • A modified direct bonding technique employing a wet chemical deposition of $SiO_2$ film on a wafer surface to be bonded is proposed for the fabrication of Si-$SiO_2$-Si structures. Structural and electrical quality of the bonded wafers is studied. Satisfied insulating properties of interfacial $SiO_2$ layers are demonstrated. Elastic strain caused by surface morphology is investigated. The diminution of strain in the grooved structures is semi-quantitatively interpreted by a model considering the virtual defects distributed over the interfacial region.

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CNTs Electric Field Enhancement of CIGS Solar Cells

  • 한성환
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.67-67
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    • 2011
  • Compound semiconductor/CNTs composites have shown considerably improved efficiency improvement in photovoltaic devices, which is often attributed to two different factors. One is the formation of efficient electronic energy cascade structures. The other effect of CNTs on the performance of photovoltaic devices is the decrement of interfacial resistance. The interfacial resistances at n-type/ p-type materials and/or n-type materials/TCO electrode are reduced by an outstanding electrical property of CNTs. In addition to the effects of CNTs, we report the third reason for increment of efficiency in photovoltaic devices by CNT's well-known electrical field enhancement effects. The improved ${\beta}$ values in reverse-FE currents of CIGS electrode with SWNTs layers indicate the enhancement of electrical field in photovoltaic devices, which implies the acceleration of the electron transfer rate in the cell. Due to the formation of an efficient electronic energy cascade structure and the decrease of the interfacial resistance as well as the improvement of the electrical field in the photovoltaic devices, the power conversion efficiency of electrochemically deposited superstrate-type CIGS solar cells was increased 24.3% in the presence of SWNTs and showed 10.40% conversion efficiency.

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홈구조 실리콘 접합 경계면에서의 Void 제거를 위한 실리콘 직접접합 방법 (The Removal Of Voids In The Grooved Interfacial Region Of Silicon Structures Obtained With Direct Bonding Technique)

  • Kim, Sang-Cheol;Kim, Eun-Dong;Kim, Nam-Kyun;Bahna, Wook;Soo, Gil-Soo;Kim, Hyung-Woo
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2002년도 하계학술대회 논문집
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    • pp.310-313
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    • 2002
  • Structures obtained with a direct boning of two FZ silicon wafers joined in such a way that a smooth surface of one wafer was attached to the grooved surface of the other were studied. A square net of grooves was made with a conventional photo lithography process. After high temperature annealing the appearance of voids and the rearrangement of structural defects were observed with X-ray diffraction topography techniques. It was shown that the formation of void free grooved boundaries was feasible. In the cases when particulate contamination was prevented, the voids appeared in the grooved structures could be eliminated with annealing. Since it was found that the flattening was accompanied with plastic deformation, this deformation was suggested to be intensively involved in the process of void removal. A model was proposed explaining the interaction between the structural defects resulted in "a dissolution" of cavities. The described processes may occur in grooved as well as in smooth structures, but there are the former that allow to manage air traps and undesirable excess of dislocation density. Grooves can be paths for air leave. According to the established mechanisms, if not outdone, the dislocations form local defect arrangements at the grooves permitting the substantial reduction in defect density over the remainder of the interfacial area.

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