• 한국전기전자재료학회논문지
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• 제34권2호
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• pp.105-109
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• 2021

CNT fiber has been in the spotlight as a conductor, but the conductivity of CNT fibers do not match that of CNT. This study reveals that the conductivity of CNT fiber can be improved by depositing Al/Cu through vacuum evaporation. Cu is commonly used for deposition on CNT fibers. But low bonding strength of the interface between CNT and Cu could be a disadvantage. To overcome this, Al was deposited on the CNT fiber for forming aluminum carbide islands to increase the interfacial bonding strength. The conductivity characteristics were improved as the deposition time increased. The resistance was measured as a function of temperature, demonstrating that the temperature coefficient of resistance (TCR) is improved to be 241 ppm/℃ in comparison with that of as-received CNT fibers at -1,251 ppm/℃, when the CNT fibers are deposited with Al and Cu, respectively, for 90s and for 540s.

• 한국세라믹학회지
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• 제47권1호
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• pp.75-81
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• 2010

The feasibility of using the thin film technology in utilizing lanthanum strontium manganite (LSM) for a solid oxide fuel cell (SOFC) cathode in a low-temperature regime is investigated in this study. Thin film LSM cathodes were fabricated using pulsed laser deposition (PLD) on anode-supported SOFCs with yttria-stabilized zirconia (YSZ) electrolytes. Although cells with a 1 ${\mu}m$-thick LSM cathode showed poor low-temperature cell performance compared to that of a cell with a bulk-processed cathode due to the lack of a triple-phase boundary length, the cell with 200 nm-thick gadolinia-doped ceria (GDC) inserted between the LSM and YSZ showed enhanced performance and more stable operation characteristics in a comparison of a cell without a GDC layer. We postulate that the GDC layer likely improved the cathode adhesion, therefore contributing to the improvement of the cell performance instead of serving as an interfacial reaction buffer.

• 한국초전도ㆍ저온공학회논문지
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• 제15권4호
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• pp.15-20
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• 2013

We investigated the flux pinning properties of both 10 mol% Zr-and Sn-doped $YBa_2Cu_3O_{7-{\delta}}$ (YBCO) films with the same thickness of ~350 nm for a comparative purpose. The films were prepared on the $SrTiO_3$ (STO) single crystal substrate by the metal-organic deposition (MOD) process. Compared with Sn-doped YBCO film, Zr-doped one exhibited a significant enhancement in the critical current density ($J_c$) and pinning force density ($F_p$). The anisotropic $J_{c,min}/J_{c,max}$ ratio in the field-angle dependence of $J_c$ at 77 K for 1 T was also improved from 0.23 for Sn-doped YBCO to 0.39 for Zr-doped YBCO. Thus, the highest magnetic $J_c$ values of 9.0 and $2.9MA/cm^2$ with the maximum $F_p$ ($F_{p,max}$) values of 19 and $5GN/m^3$ at 65 and 77 K for H // c, respectively, could be achieved from Zr-doped YBCO film. The stronger pinning effect in Zr-doped YBCO film is attributable to smaller $BaZrO_3$ (BZO) nanoparticles (the average size ${\approx}28.4$ nm) than $YBa_2SnO_{5.5}$ (YBSO) nanoparticles (the average size ${\approx}45.0$ nm) incorporated in Sn-doped YBCO film since smaller nanoparticles can generate more defects acting as effective flux pinning sites due to larger incoherent interfacial area for the same doping concentration.

• 한국분말재료학회지
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• 제27권3호
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• pp.219-225
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• 2020

The directed energy deposition (DED) process of metal 3D printing technologies has been treated as an effective method for welding, repairing, and even 3-dimensional building of machinery parts. In this study, stainless steel 316L (STS316L) and Inconel 625 (IN625) alloy powders are additively manufactured using the DED process, and the microstructure of the fabricated STS316L/IN625 sample is investigated. In particular, there are no secondary phases in the interface between STS316L and the IN625 alloy. The EDS and Vickers hardness results clearly show compositionally and mechanically transient layers a few tens of micrometers in thickness. Interestingly, several cracks are only observed in the STS 316L rather than in the IN625 alloy near the interface. In addition, small-sized voids 200-400 nm in diameter that look like trapped pores are present in both materials. The cracks present near the interface are formed by tensile stress in STS316L caused by the difference in the CTE (coefficient of thermal expansion) between the two materials during the DED process. These results can provide fundamental information for the fabrication of machinery parts that require joining of two materials, such as valves.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.252.2-252.2
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• 2013

ZnO nanostructures have a lot of interest for decades due to its varied applications such as light-emitting devices, power generators, solar cells, and sensing devices etc. To get the high performance of these devices, the factors of nanostructure geometry, spacing, and alignment are important. So, Patterning of vertically- aligned ZnO nanowires are currently attractive. However, many of ZnO nanowire or nanorod fabrication methods are needs high temperature, such vapor phase transport process, metal-organic chemical vapor deposition (MOCVD), metal-organic vapor phase epitaxy, thermal evaporation, pulse laser deposition and thermal chemical vapor deposition. While hydrothermal process has great advantages-low temperature (less than $100^{\circ}C$), simple steps, short time consuming, without catalyst, and relatively ease to control than as mentioned various methods. In this work, we investigate the dependence of ZnO nanowire alignment and morphology on si substrate using of nanosphere template with various precursor concentration and components via hydrothermal process. The brief experimental scheme is as follow. First synthesized ZnO seed solution was spun coated on to cleaned Si substrate, and then annealed $350^{\circ}C$ for 1h in the furnace. Second, 200nm sized close-packed nanospheres were formed on the seed layer-coated substrate by using of gas-liquid-solid interfacial self-assembly method and drying in vaccum desicator for about a day to enhance the adhesion between seed layer and nanospheres. After that, zinc oxide nanowires were synthesized using a low temperature hydrothermal method based on alkali solution. The specimens were immersed upside down in the autoclave bath to prevent some precipitates which formed and covered on the surface. The hydrothermal conditions such as growth temperature, growth time, solution concentration, and additives are variously performed to optimize the morphologies of nanowire. To characterize the crystal structure of seed layer and nanowires, morphology, and optical properties, X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), Raman spectroscopy, and photoluminescence (PL) studies were investigated.

• 한국재료학회지
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• 제34권6호
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• pp.283-290
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• 2024

The aggressive scaling of dynamic random-access memory capacitors has increased the need to maintain high capacitance despite the limited physical thickness of electrodes and dielectrics. This makes it essential to use high-k dielectric materials. TiO₂ has a large dielectric constant, ranging from 30~75 in the anatase phase to 90~170 in rutile phase. However, it has significant leakage current due to low energy barriers for electron conduction, which is a critical drawback. Suppressing the leakage current while scaling to achieve an equivalent oxide thickness (EOT) below 0.5 nm is necessary to control the influence of interlayers on capacitor performance. For this, Pt and Ru, with their high work function, can be used instead of a conventional TiN substrate to increase the Schottky barrier height. Additionally, forming rutile-TiO₂ on RuO₂ with excellent lattice compatibility by epitaxial growth can minimize leakage current. Furthermore, plasma-enhanced atomic layer deposition (PEALD) can be used to deposit a uniform thin film with high density and low defects at low temperatures, to reduce the impact of interfacial reactions on electrical properties at high temperatures. In this study, TiO₂ was deposited using PEALD, using substrates of Pt and Ru treated with rapid thermal annealing at 500 and 600 ℃, to compare structural, chemical, and electrical characteristics with reference to a TiN substrate. As a result, leakage current was suppressed to around 10^-6 A/cm² at 1 V, and an EOT at the 0.5 nm level was achieved.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.248-248
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• 2016

We have investigated the crystallinity, preferential ordering, and interfacial stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin film interconnected with organic/inorganic multilayer. At the region close to the organic-organic interface, HATCN formed low crystalline order with substantial amorphous phase. As film growth continued, HATCN stacked with high crystalline phase. After a sputtering deposition of the indium zinc oxide (IZO) layer on top of HATCN/organic layer, the volume fraction of preferentially ordered HATCN crystals increased without any structural deterioration. In addition, the HATCN surface was kept quite stable by preserving the sharp interface between HATCN and sputtering deposited IZO layers.

• E2M - 전기 전자와 첨단 소재
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• 제16권9호
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• pp.61.1-61
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• 2003

Stoichiometric, uniform, amorphous ZrO$_2$ films with an equivalent oxide thickness of ∼1.5nm and a dielectric constant of ∼18 were deposited by an atomic layer controlled deposition process on silicon for potential application in meta-oxide-semiconductor(MOS) devices. The conduction mechanism is identified as Schottky emission at low electric fields and as Poole-Frenkel emission at high electric fields. the MOS devices showed low leakage current, small hysteresis(〈50mV), and low interface state density(∼2*10e11/cm2eV). Microdiffraction and high-resolution transmission electron microscopy showed a localized monoclinic phase of ${\alpha}$-ZrO$_2$ and an amorphous interfacial ZrSi$\_$x/O$\_$y/ layer which has a correspondign dielectric constant of 11

• Journal of Advanced Marine Engineering and Technology
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• 제28권6호
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• pp.1000-1009
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• 2004

The environment friendly calcareous deposit films were formed on steel plates by electrodeposition technique in natural seawater and synthetic solutions such as dissolved $\textrm{Mg}^{2+}$ and $\textrm{Ca}^{2+}$ ions at various potential conditions. The influence of potential conditions on composition ratio, structure and morphology of the electrodeposited films were investigated by scanning electron microscopy(SEM), energy dispersive spectroscopy(EDS) and X-ray diffractor (XRD). Accordingly, this study was provided a better understanding of the composition between the growth of $\textrm{Mg(OH)}_2$ and that of $\textrm{CaCO}_3$ during the formation of calcareous deposit films on steel substrate under cathodically electrodeposition in synthetic and natural seawater. The results showed that the formation of good overall calcareous deposited film in seawater can be achieved by controlling the Ca/Mg ratio according to interfacial pH with the effective use of the electro deposition technique.

• E2M - 전기 전자와 첨단 소재
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• 제11권10호
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• pp.94-99
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• 1998

Suitable replacement materials for ultrathin SiO2 in deeply scaled MOSFETs such as lattice polarizable films, which have much higherpermittivities than SiO2, have bandgaps of only 3.0 to 4.0 eV. Due to these small bandgaps, the reliability of these films as a gate insulator is a serious concern. Ramped voltage, time dependent dielectric breakdown, and hot carrier effect measurements were done on 190 layers of TiO2 which were deposited through the metal-organic chemical vapor deposition of titanium tetrakis-isopropoxide (TTIP). Measurements of the high and low frequency capacitance indicate that virtually no interface state are created during constant current injection stress. The increase in leakage upon electrical stress suggests that uncharged, near-interface states may be created in the TiO2 film near the SiO2 interfacial layer that allow a tunneling current component at low bias.