• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.106-106
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• 2000

반도체 소자가 미세화 됨에 따라 게이트 유전막으로 사용되는 SiO2의 박막화가 요구되나, boron penetration에 의한 Vt shift, 게이트 누설전류, 다결정 실리콘 게이트의 depletion effect 그리고 quantum mechanical effect 때문에 ~20 급에서 한계를 나타내고 있다. 이에 0.1$\mu\textrm{m}$이상의 design rule을 갖는 logic이나 memory 소자에서 요구되어지는 ~10 급 게이트 산화막은 SiO2(K=3.9)를 대신하여 고유전율을 갖는 재료의 채택이 필수 불가결하게 되었다. 고유전 박막 재료를 사용하면, 두께를 두껍게 해도 동일한 inversion 특성이 유지되고 carrier tunneling 이 덜하여 등가 산화막의 두께를 줄일 수 있다. 이러한 고유전박막 재료중 가장 활발히 연구되고 있는 재료는 Ta2O5, Al2O3, STO 그리고 BST 등이 있으나 Ta2O5, STO, BST 등은 실리콘 기판과 직접 반응을 한다는 문제를 가지고 있으며, Al2O3는 유전율이 낮의 재료가 최근 주목받고 있다. 본 실험에서는 ZrO2, HfO2 또는 그 silicates 등의 재료가 최근 주목 받고 있다. 본 실험에서는 ZrO2 박막의 증착조건에 따른 물리적, 전기적 특성 변화에 대하여 연구하였다. RCA 방식으로 세정한 P-type (100) 실리콘 기판위에 reactive DC sputtering 방법으로 압력 5mtorr, power 100~400W, 기판온도는 100-50$0^{\circ}C$로 변화시켜 ZrO2 박막을 증착한 후 산소와 아르곤 분위기에서 400-80$0^{\circ}C$, 10-120min으로 열처리하였다. 증착직후의 시편들과 열처리한 ZrO2 박막의 미세구조와 전기적 특성 변화를 관찰하였다. 우선 굴절율(RI)를 이용해 ZrO2 박막의 밀도를 예측하여 power와 기판온도에 따라 이론값 2.0-2.2 에 근접한 구조를 얻은 후 XRD, XPS, AFM, 그리고 TEM을 사용하여 ZrO2 박막의 chemical bonding, surface roughness 그리고 interfacial layer의 특성을 관찰하였다. 그리고 C-V, I-V measurement를 이용해 capacitance, 유전율, 누설전류 등의 전기적 특성을 관찰해 최적 조건을 설정하였다.

• Progress in Superconductivity
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• v.9 no.2
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• pp.177-182
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• 2008

[ $MgB_2$ ] thin films were fabricated using hybrid physical-chemical vapor deposition (HPCVD) method on silicon substrates with buffers of alumina grown by using atomic layer deposition method. The growth war in a range of temperatures $500\;{\sim}\;600^{\circ}C$ and under the reactor pressures of $25\;{\sim}\;50\;Torr$. There are some interfacial reactions in the as-grown films with impurities of mostly $Mg_2Si$, $MgAl_2O_4$, and other phases. The $T_c$'s of $MgB_2$ films were observed to be as high as 39 K, but the transition widths were increased with growth temperatures. The magnetization was measured as a function of temperature down to the temperature of 5 K, but the complete Meissner effect was not observed, which shows that the granular nature of weak links is prevailing. The formation of mostly $Mg_2Si$ impurity in HPCVD process is discussed, considering the diffusion and reaction of Mg vapor with silicon substrates.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.68-69
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• 2011

The process of charge transfer at the interface between two semiconductors or between a metal and a semiconductor plays an important role in many areas of technology. The optimization of such devices requires a good theoretical description of the interfaces involved. This, in turn, has motivated detailed mechanistic studies of interfacial charge-transfer reactions at metal/organic, organic/organic, and organic/inorganic semiconductor heterojunctions. Charge recombination of photo-induced electron with redox species such as oxidized dyes or triiodide or cationic HTM (hole transporting materials) at the heterogeneous interface of $TiO_2$ is one of main loss factors in liquid junction DSSCs or solid-state DSSCs, respectively. Among the attempts to prevent recombination reactions such as insulating thin layer and lithium ions-doped hole transport materials and introduction of co-adsorbents, although co-adsorbents retard the recombination reactions as hydrophobic energy barriers, little attention has been focused on the anchoring processes. Molecular engineering of heterogeneous interfaces by employing several co-adsorbents with different properties altered the surface properties of $TiO_2$ electrodes, resulting to the improved power conversion efficiency and long-term stability of the DSSCs. In this talk, advantages of the coadsorbent-assisted sensitization of N719 in preparation of DSSCs will be discussed.

• Journal of Korean Society of Coastal and Ocean Engineers
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• v.28 no.5
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• pp.257-264
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• 2016

In this study, experiments for measurements of entrainment rate of fluid mud were carried out using annular flume domestically for the first time. Six entrainment tests using kaolinite sediments were conducted with different initial concentrations of fluid mud. It is shown that sediment settling counteracts the otherwise buoyancy dependent entrainment of fluid mud, and that the settling effect leads to a measurably decreased entrainment rate at higher Richardson numbers in comparison with entrainment of salt water, due to additional dissipation of turbulent kinetic energy in the interfacial layer. Through the comparison with previous other studies, the overall performance of the annular flume, the experimental procedure and the test results in simulating the entrainment of fluid mud are shown to be good enough to verify.

• Applied Chemistry for Engineering
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• v.31 no.5
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• pp.467-474
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• 2020

Polymer solar cells have attracted extensive attention over the past decade due to their benefits, such as good solution-process-ability, light weight, low-cost, mechanically flexibility, and high efficiency. Conjugated (CPE) and non-conjugated (NPE) polyelectrolyte materials have been employed to avoid the typical weaknesses associated with conventional metal oxide interlayers. However, the application of CPEs is more complicated than that of NPEs because the synthesis procedures are complicated. NPEs containing charged ion groups can provide numerous benefits for renewable energy applications. Especially when implemented in polymer solar cells.

• Journal of the Korean institute of surface engineering
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• v.36 no.5
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• pp.373-378
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• 2003

With increasing environmental concerns, application of lead-free solder and fluxless soldering process have been taken attention from the electronic packaging industry. Plasma treatment is one of the soldering methods for the fluxless soldering, and it can prevent environmental pollution cased by flux. On this study fluxless soldering process under $Ar-H_2$plasma using lead free solders such as Sn-3.5 wt%Ag, Sn-3.5 wt%Ag-0.7 wt%Cu and Sn-37%Pb for a reference was investigated. As the plasma reflow has higher soldering temperature than normal air reflow, the effects of UBM(Under Bump Metallization) thickness on the interfacial reaction and bonding strength can be critical. Experimental results showed in case of the thin UBM, Au(20 nm)/Cu(0.3 $\mu\textrm{m}$)/Ni(0.4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), shear strength of the soldered joint was relatively low as 19-27㎫, and it's caused by the crack observed along the bonded interface. The crack was believed to be produced by the exhaustion of the thin UBM-layer due to the excessive reaction with solder under plasma. However, in case of thick UBM, Au(20 nm)/Cu(4 $\mu\textrm{m}$)/Ni(4 $\mu\textrm{m}$)/Al(0.4 $\mu\textrm{m}$), the bonded interface was sound without any crack and shear strength gives 32∼42㎫. Thus, by increasing UBM thickness in this study the shear strength can be improved to 50∼70%. Fluxed reflow soldering under hot air was also carried out for a reference, and the shear strength was 48∼52㎫. Consequently the fluxless soldering with plasma showed around 65∼80% as those of fluxed air reflow, and the possibility of the $Ar-H_2$ plasma reflow was evaluated.

• Journal of the Korean institute of surface engineering
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• v.44 no.5
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• pp.173-178
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• 2011

Separator of stack in polymer electrolyte membrane fuel cell (PEMFC) is high cost and heavy. If we make it low cost and lighter, it will have a great ripple. In this study, low carbon steel is used as base metal of separator because the cost of low carbon steel is very cheaper commercial metal material than stainless steels, which is widely used as separator. Low carbon steel has not a good corrosion resistance. In order to improve the corrosion resistance and electrolytic conductivity, low carbon steel needs to be surface treated. We made Chromium electroplated layer of $5{\mu}m$, $10{\mu}m$ thickness on the surface of low carbon steel and it was nitrided for 2 hours at $1000^{\circ}C$ in a furnace with 100 torr nitrogen gas pressure. Cross-sectional and surface microstructures of surface treated low carbon steel are investigated using SEM. And crystal structures are investigated by XRD. Interfacial contact resistance and corrosion tests were considered to simulate the internal operating conditions of PEMFC stack. The corrosion test was performed in 0.1 N $H_2SO_4$ + 2 ppm $F^-$ solution at $80^{\circ}C$. Throughout this research, we try to know that low carbon steel can be replaced stainless steel in separator of PEMFC.

• The Journal of Advanced Prosthodontics
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• v.6 no.3
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• pp.151-156
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• 2014

PURPOSE. To investigate the microtensile bond strength between two all-ceramic systems; lithium disilicate glass ceramic and zirconia core ceramics bonded with their corresponding glass veneers. MATERIALS AND METHODS. Blocks of core ceramics (IPS e.max$^{(R)}$ Press and Lava$^{TM}$ Frame) were fabricated and veneered with their corresponding glass veneers. The bilayered blocks were cut into microbars; 8 mm in length and $1mm^2$ in cross-sectional area (n = 30/group). Additionally, monolithic microbars of these two veneers (IPS e.max$^{(R)}$ Ceram and LavaTM Ceram; n = 30/group) were also prepared. The obtained microbars were tested in tension until fracture, and the fracture surfaces of the microbars were examined with fluorescent black light and scanning electron microscope (SEM) to identify the mode of failure. One-way ANOVA and the Dunnett's T3 test were performed to determine significant differences of the mean microtensile bond strength at a significance level of 0.05. RESULTS. The mean microtensile bond strength of IPS e.max$^{(R)}$ Press/IPS e.max$^{(R)}$ Ceram ($43.40{\pm}5.51$ MPa) was significantly greater than that of Lava$^{TM}$ Frame/Lava$^{TM}$ Ceram ($31.71{\pm}7.03$ MPa)(P<.001). Fluorescent black light and SEM analysis showed that most of the tested microbars failed cohesively in the veneer layer. Furthermore, the bond strength of Lava$^{TM}$ Frame/Lava$^{TM}$ Ceram was comparable to the tensile strength of monolithic glass veneer of Lava$^{TM}$ Ceram, while the bond strength of bilayered IPS e.max$^{(R)}$ Press/IPS e.max$^{(R)}$ Ceram was significantly greater than tensile strength of monolithic IPS e.max$^{(R)}$ Ceram. CONCLUSION. Because fracture site occurred mostly in the glass veneer and most failures were away from the interfacial zone, microtensile bond test may not be a suitable test for bonding integrity. Fracture mechanics approach such as fracture toughness of the interface may be more appropriate to represent the bonding quality between two materials.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.258-261
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• 2000

Highly (h00)-oriented (Ba, Sr)TiO$_3$(BST) thin films were grown by pulsed laser deposition on the perovskite LaNiO$_3$(LNO) metallic oxide layer as a bottom electrode. The LNO films were deposited on SiO$_2$/Si substrates by rf-magnetron sputtering method. The crystalline phases of the BST film were characterized by x-ray $\theta$-2$\theta$, $\omega$-rocking curve and $\psi$-scan diffraction measurements. The surface microsturcture observed by scanning electron microscopy was very dense and smooth. The low-frequency dielectric responses of the BST films grown at various substrate temperatures were measured as a function of frequency in the frequency range from 0.1 Hz to 10 MHz. The BST films have the dielectric constant of 265 at 1 kHz and showed multiple dielectric relaxation at the low frequency region. The origin of these low-frequency dielectric relaxation are attributed to the ionized space charge carriers such as the oxygen vacancies and defects in BST film, the interfacial polarization in the grain boundary region and the electrode polarization. We studied also on the capacitance-voltage characteristics of BST films.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.398-404
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• 2001

Effects of coating treatment of metallic Cu film on SiC for Al/SiC composite were studied. The Copper was deposited on SiC by electroless plating method. Al/sic composite was fabricated at temperature range of $670^{\circ}C$ to 90$0^{\circ}C$ under vacuum atmosphere. The wetting behavior of Al/SiC composite were analysed by SEM and XRD. The coating treatment on SiC improved wettability of Al melt on SiC considerably comparing to the non coated SiC. This improved wettability seems strongly concerned to the increase of chemical reactivity between coated layer and Al matrix. The improvement of wettability of Al melt on the Cu coated SiC was closely related to in the initial stage of reaction. The metallic film played an important role in reducing the interfacial free energy and breaking down the aluminum oxide film through the reaction with Al melt. The wetting behavior of the as-received SiC with Al melt was not uniform, indicated by the contact angles from less than $97^{\circ}$to more than $97^{\circ}$.