• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.31-32
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• 2008

The structure of OLEDs with conventional heterostructure consists of anode, hole injection layer, hole transport layer, light-emitting layer, electron transport layer, electron injection layer, and cathode. NPB used as a hole transport layer and DPVBi used as a blue light emitting layer were graded-mixed at selected ratio. Interface at heterojunction between the hole transport layer and the elecrtron transport layer restricts device's stability. Mixing of the hole transport layerand the emitting layer removes abrupt interface between the hole transport. layer and the electron transport layer. The stability of OLED with graded mixed-layer developed in this study was improved.

• Structural Engineering and Mechanics
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• v.34 no.6
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• pp.667-683
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• 2010

A mathematical model and its analytic solution for the analysis of stress-strain state of a linear elastic two-layer beam is presented. The model considers both slip and uplift at the interface. The solution is employed in assessing the effects of transverse and shear contact stiffnesses and the thickness of the interface layer on behaviour of nailed, two-layer timber beams. The analysis shows that the transverse contact stiffness and the thickness of the interface layer have only a minor influence on the stress-strain state in the beam and can safely be neglected in a serviceability limit state design.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.332-336
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• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional Pt layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at $330^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

• Journal of Powder Materials
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• v.4 no.3
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• pp.196-204
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• 1997

Joining of AIN ceramics to W and Cu by active-metal brazing method was tried with use of (Ag-Cu)-Ti alloy as insert-metal. Joints were produced under various conditions of temperature, holding time and Ti-content in (Ag-Cu) alloy Reaction and microstructural development in bonded interface were investigated through observation and analysis by SEM/EDS, EPMA and XRD. Joint strengths were measured by shear test. Bonded interface consists of two layers: an insert-metal layer of eutectic Ag- and Cu-rich phases and a reaction layer of TiN. Thickness of reaction layer increases with bonding temperature, holding time and Ti-content of insert-metal. It was confirmed that the growth of reaction layer is a diffusion-controlled process. Activation energy for this process was 260 KJ/mol which is lower than that for N diffusion in TiN. Maximum shear strength of 108 MPa and 72 MPa were obtained for AIN/W and AIN/Cu joints, respectively. Relationship between processing variables, joint strength and thickness of reaction layer was also explained.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.465-465
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• 2013

Inorganic 물질인 SiO2 dielectric 위에 organic dielectric PVP (4-vinyphenol)를 spin coating으로 올려, inorganic/organic dielectric 형태의 double layer구조로 High-performance amorphous indiumgallium zinc oxide thin-film transistors (IGZO TFT)를 제작하여 보았다. SiO2 dielectric을 buffer layer로 80 nm, PVP는 10Wt% 400 nm로 구성하였으며, 200 nm single SiO2 dielectric과 동일한 수준의 leakage current 특성을 MIM Capacitor 구조를 통해서 확인할 수 있었다. 이 소자의 장점은 용액공정의 도입으로 공정 시간의 단축 및 원가 절감을 이룰 수 있으며, dielectric과 channel 사이의 균일한 interface의 형성으로 interface trap 개선 및 Yield 향상의 장점을 갖는다. 우리는 실험을 통해서 SiO2 buffer layer가 수직 electric field에 의한 leakage current을 제어하고, PVP dielectric은 interface를 개선하는 것을 확인하였다. Vth의 negative shift 및 slope의 향상으로 구동전압이 줄어들고, 균일한 I-V Curve 형성을 통해서 Process Yield의 향상을 확인하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.332-336
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• 2001

In this study, the reaction at UBM(Under Bump Metallurgy) and solder interface was investigated. The UBM employed in conventional optical packages, Au/Pt/Ti layer, were found to dissolve into molten Au-Sn eutectic solder during reflow soldering. Therefore, the reaction with different diffusion barrier layer such as Fe, Co, Ni were investigated to replace the conventional R layer. The reaction behavior was investigated by reflowing the solder on the pad of the metals defined by Cr layer for 1, 2, 3, 4, and 5 minutes at 330$^{\circ}C$. Among the metals, Co was found to be most suitable for the diffusion barrier layer as the wettability with the solder was reasonable and the reaction rate of intermetallic formation at the interface is relatively slow.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.15 no.1
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• pp.9-20
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• 2002

The purpose of this research is to develop computational procedures for studying nonlinear soil-structure interaction Problems. In orders to study soil-structure interaction behavior, the finite element analysis for the strip footing subjected to both vortical and lateral loads, and foundation layer reinforced with sheet pile are considered, interface elements are used between the footing and the soil to model the interaction behavior The main analyzed results are as follows; 1. For the prediction of settlement and lateral displacement, the result due to interface element was evaluated larger then without interface element. 2. For the determination of ultimate bearing capacity, the value using interface element appeared smaller by 12%, which was safe. 3. The horizontal and vertical displacement of strip footing affected by the presence of interface element.

• Korean Journal of Metals and Materials
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• v.49 no.8
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• pp.664-670
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• 2011

3-ply Mg/Al/STS clad-metal was fabricated by the roll bonding process. An interfacial reaction layer was formed at the Mg/Al interface at and above $300^{\circ}C$ whereas no interfacial reaction layer was observed up to $400^{\circ}C$. The effect of the interfacial reaction layer on the mechanical and fracture properties in clad metals after heat treatments were investigated The chemical compositions were analyzed at the Mg/Al interface by an Energy dispersive X-ray analysis (EDX). A tension test was performed to examine the interfacial cracking properties. The Mg layer fractured first, causing a sudden drop of the stress and Al/STS layer continued to deform until the final fracture. Periodic cracks and crack propagation was observed at the reaction layer between Mg and Al.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.72-72
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• 2010

Recent development of organic solar cell approaches the level of 8% power conversion efficiency by the introduction of new materials, improved material engineering, and more sophisticated device structures. As for interface engineering, various interlayer materials such as LiF, CaO, NaF, and KF have been utilized between Al electrode and active layer. Those materials lower the work function of cathode and interface barrier, protect the active layer, enhance charge collection efficiency, and induce active layer doping. However, the addition of another step of thin layer deposition could be a little complicated. Thus, on a typical solar cell structure of Al/P3HT:PCBM/PEDOT:PSS/ITO glass, we used Li:Al alloy electrode instead of Al to render a simple process. J-V measurement under dark and light illumination on the polymer solar cell using Li:Al cathode shows the improvement in electric properties such as decrease in leakage current and series resistance, and increase in circuit current density. This effective charge collection and electron transport correspond to lowered energy barrier for electron transport at the interface, which is measured by ultraviolet photoelectron spectroscopy. Indeed, through the measurement of secondary ion mass spectroscopy, the Li atoms turn out to be located mainly at the interface between polymer and Al metal. In addition, the chemical reaction between polymer and metal electrodes are measured by X-ray photoelectron spectroscopy.

• Structural Engineering and Mechanics
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• v.3 no.2
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• pp.121-133
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• 1995

It is well known that two-dimensional simplified third-order theories satisfy the layer interface continuity of transverse shear strains, thus these theories violate the continuity of transverse shear stresses when two consecutive layers differ either in fibre orientation or material. The third-order theories considered herein involve four/or five dependent unknowns in the displacement field and satisfy the condition of vanishing of transverse shear stresses at the bounding planes of the plate. The objective of this investigation is to examine (i) the flexural response prediction accuracy of these third-order theories compared to exact elasticity solution (ii) the effect of layer interface continuity conditions on the flexural response. To investigate the effect of layer interface continuity conditions, three-dimensional elasticity solutions are developed by enforcing the continuity of different combinations of transverse stresses and/or strains at the layer interfaces. Three dimensional twenty node solid finite element (having three translational displacements as degrees of freedom) without the imposition of any of the conditions on the transverse stresses and strains is also employed for the flexural analysis of the laminated plates for the purposes of comparison with the above theories. These shear deformation theories and elasticity approaches in terms of accuracy, adequacy and applicability are examined through extensive numerical examples.