• Journal of the Korea Convergence Society
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• v.13 no.4
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• pp.331-337
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• 2022

Manufactured thermoplastic composite materials to replace the metal materials used as battery housing materials for electric vehicles with lightweight materials. As the matrix material, nylon 6 which is a polymer material was used. Boron Nitrate(BN), which has high thermal conductivity, was used to provide heat dissipation performance. The heat dissipation characteristics of the thermally conductive polymer composite material according to the BN content and particle size were analyzed. The thermal conductivity value increased as the filler content increased, and composite materials particle size of 60 to 70㎛ and BN content of 50%, the thermal conductivity was 1.4 W/mK. The larger the particle size, the wider the inter-particle interface contact surface, which means that a thermal path was formed. wider the interfacial contact surface between the particles, and the thermal path was formed. A battery housing was manufactured using the manufactured thermally conductive polymer composite material, and the temperature change during charging and discharging of the cell was observed, and the possibility as a substitute material for the battery housing was confirmed.

• Applied Chemistry for Engineering
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• v.35 no.4
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• pp.303-308
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• 2024

Currently, lithium secondary batteries have been used as medium- or large-sized energy sources such as electric vehicles and energy storage system (ESS) due to their high energy and eco-friendly characteristics. Currently commercialized lithium secondary batteries do not fully meet the demands for high energy density and safety. Many studies on solid electrolytes are being conducted to satisfy these requirements. In order to commercialize a solid electrolyte, it is important to supplement the low ion conductivity and high interface resistance with an electrode compared to the organic liquid electrolyte. Therefore, in this study, oligo(3,4-ethylenedioxythiophene (EDOT)) is added to poly(vinyl alcohol) (PVA), which is a polymer matrix with ion conductivity and sticky characteristics, to decrease the interfacial resistance with the same type of polythiophene (PTh)-based electrode. In addition, the addition of porous silicon dioxide (SiO₂) filler improves lithium salt dissociation ability and increases ionic conductivity. And the electrochemical stability of the solid electrolyte, which has been lowered due to additives, is improved by introducing a cross-linked structure using boric acid (BA).

• Journal of the korean academy of Pediatric Dentistry
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• v.31 no.2
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• pp.144-152
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• 2004

The aim of this study was to evaluate the resistance to degradation of three commercial compomers in an alkaline solution. Dyract(Dentsply), Elan(Kerr) and F-2000(3M) polyacid modified resin composites(compomers) were used in this study. The resistance to degradation was evaluated on the basis of mass loss(%), degradation $depth({\mu}m)$ and Si, Al, Ba loss(ppm). The results were as follows : 1. The mass loss of each brand was $1.42%{\sim}2.14%$ and there was no statistically significant difference of mass loss among Dyract, F2000 and Elan. 2. The degradation layer depth of each brand was $182.92{\sim}227.7{\mu}m$ and there was no statistically significant difference of degradation layer depth among Dyract, F2000 and Elan. 3. There was statistically significant differences in Si-loss and Al-loss among three compomers (p<0.05). Si loss was the highest value in Dyract and Al loss was the highest value in F2000. 4. There was statistically significant correlation between mass loss and degradation layer depth (r=0.60, p<0.05). 5. In SEM finding, there was some destruction of compomer matrix-filler interface in post-exposure specimen to NaOH solution. As the matrix decreased, the filler particles distinguished and the periphery of the filler particles appeared whitish color due to degradation.

• Journal of Korean Society of Forest Science
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• v.90 no.4
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• pp.420-430
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• 2001

The object of this study is to develop a computer program for the arrangement of the forest-road network maximizing the investment effect in forest-road construction with factors such as terrains, forest physiognomy, management plan, logging system, cost of forest-road construction, capacity of inputted labour, capacity of timber production and so on. The operating system developed by this study is Korean Windows 95/98 and Microsoft Visual Basic ver. 5.0. User interface was designed as systematic structure, it is presented as a kind of GUI(graphic user interface). The developed program has result of the most suitable forest-road arrangement, has suitable forest-road density calculated with cost of logging, cost of forest-road construction, diversion ratio of forest-road, cost of walking in forest. And the most suitable forest-road arrangement was designed for forest-road arrangement network which maximized investment effect through minimizing the sum of cost of logging and cost of forest-road construction. Input data were divided into map data and control data. Digital terrain model, division of forest-road layout plan, division of forest function and the existing road network are obtained from map data. on the other hand, cost of logging related terrain division, diversion ratio of forest-road and working road, cost of forest-road construction, cost of walking, cost of labor, walking speed, capacity of inputted labor, capacity of timber production and total distance of forest-road are inputted from control data. And map data was designed to be inputted by mesh method for common matrix. This program can be used to construct a new forest-road or vice forest-road which compensate already existing forest-road for the functional forestry.

• Journal of Periodontal and Implant Science
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• v.25 no.3
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• pp.741-755
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• 1995

Currently titanium is the material of choice for implants because of its biological acceptance. This high degree of biocompatibility is thought to result, in part, from the protective and stable oxide layer that presumably aids in the bonding of the extracellular matrix at the implant-tissue interface. Endosseous dental implants are interfaced with bone, connective tissue, and epithelium when implanted into the jaw bone. The soft tissue interface including connective tissue and epithelium is one of the most critical factors in the determination of implant maintenance and prognosis. For maintenance of failing or failed implants, it is essential to treat the implant fixture surface to remove bacterial endotoxins and make a surface tolerated by surrounding soft and hard tissues. In this study, the effect of mechanical treatment on titanium plasma sprayed implant on adhesiveness and proliferation of human gingival fibroblasts and changed surface characteristics were studied. titanium plasma sprayed discs manufactured by Friedrichsfeld company were treated with loaw speed stone bur, a rubber point and a jetpolisher. Its surface components were analyzed with Energy dispersive X-ray spectroscopy to evaluate whether the surface characteristics were altered or not. To observe the spreading pattern of the human gingival fibroblasts which attached to the all specimens author used the scanning electron microscope. The results were as follows : Pure titanium and plasma sprayed titanium, stone polished titanium showed titanium peak and small amout of aluminum, so there was no alteration on surface characteristics. Under the scanning electron microscopic examination in the initial attachment of human gingival fibroblast, there was a slight enhancement in pure titanium, stone polished titanium than plasma sprayed titanium. After 6 hours, the pure titanium and stone polished titanium showed human gingival fibroblasts were elongated and connected with numerous processes. Human gingival fibroblasts were more intimately attached on the pure titanium discs than on the other discs. The human gingival fibroblasts attached on the plasma sprayed titanium by thin and elongated processes. After 24 hours, the human gingival fibroblasts connected with each other via numerous processes and compeletly covered the pure titanium and stone polshed titanium discs. Human gingival fibroblasts had multiple point contacts with more long and thin lamellopodia and showed a little bare surface on plasma sprayed titanium discs.

• The Journal of Korean Academy of Prosthodontics
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• v.50 no.3
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• pp.169-175
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• 2012

Purpose: In this study, brazing characteristics of $ZrO_2$ and Ti-6Al-4V brazed joints with increasing temperature were investigated. Materials and methods: The sample size of the $ZrO_2$ was $3mm{\times}3mm{\times}3mm$ (thickness), and Ti-6Al-4V was $10mm(diameter){\times}5mm(thickness)$. The filler metal consisted of Ag-Cu-Sn-Ti was prepared in powder form. The brazing sample was heated in a vacuum furnace under $5{\times}10^{-6}$ torr atmosphere, while the brazing temperature was changed from 700 to $800^{\circ}C$ for 30 min. Results: The experimental results shows that brazed joint of $ZrO_2$ and Ti-6Al-4V occurred at $700-800^{\circ}C$. Brazed joint consisted of Ag-rich matrix and Cu-rich phase. A Cu-Ti intermetallic compounds and a Ti-Sn-Cu-Ag alloy were produced along the Ti-6Al-4V bonded interface. Thickness of the reacted layer along the Ti-6Al-4V bonded interface was increased with brazing temperature. Defect ratios of $ZrO_2$ and Ti-6Al-4V bonded interfaces decreased with brazing temperature. Conclusion: Thickness and defect ratio of brazed joints were decreased with increasing temperature. Zirconia was not wetting with filler metal, because the reaction between $ZrO_2$ and Ti did not occur enough.

• Journal of the Korean Vacuum Society
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• v.10 no.1
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• pp.44-50
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• 2001

Metal oxide semiconductor (MOS) structures containing nanocrystals are fabricated by using rapid thermal oxidations of amorphous silicon films. The amorphous films are deposited either by electron beam deposition method or by electron beam deposition assisted by Ar ion beam during deposition. Post oxidation of e-beam deposited film results in relatively small hysteresis of capacitance-voltage (C-V) and the flat band voltage shift, $\DeltaV_{FB}$ is less than 1V indicative of the formation of low density nanocrystals in $SiO_2$ near $SiO_2$/Si interface. By contrast, we observe very large hysteresis in C-V characteristics for oxidized ion-beam assisted e-beam deposited sample. The flat band voltage shift is larger than 22V and the hysteresis becomes even broader as increasing injection times of holes at accumulation condition and electrons at inversion condition. The result indicates the formation of slow traps in $SiO_2$ near $SiO_2$/Si interface which might be related to large density nanocrystals. Roughly estimated trap density is $1{\times}10^{13}cm^{-2}$. Such a large hysteresis may be explained in terms of the activation of adatom migration by Ar ion during deposition. The activated migration may increase nucleation rate of Si nuclei in amorphous Si matrix. During post oxidation process, nuclei grow into nanocrystals. Therefore, ion beam assistance during deposition may be very feasible for MOS structure containing nanocrystals with large density which is a basic building block for single electron memory device.

• Korean Journal of Crystallography
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• v.7 no.1
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• pp.8-19
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• 1996

Cholestryl Methyl and Propyl Carbonate(CH3OCOOC27H45, C3H7OCOOC27H45) are monoclinic, space group P21, with a=17.014(1), b=7.682(1), c=10.612(1)Å, β=103.05(1)°, Z=2, V=1351.16Å3, Dc=1.09 g/cm3 for methyl carbonate, and with a=13.683(1), b=11.864(2), c=18.904(2)Å, β=106.30(1)°, Z=4, V=2945.4Å3, Dc=1.06 g/cm3, Dm=1.06 g/cm3 for propyl carbonate. The intensity data were collected on an Enraf-Nonius CAD-4 diffractometer with a graphite monochromated Cu-Kα radiation. The structure was solved by direct methods and refined by full matrix least-squares methods. The final R factor was 0.051 for 2323 observed reflections for methyl carbonate and 0.074 for 3323 observed reflections for propyl carbonate. Compared with other cholesteryl derivatives, the cholesteryl ring and tail region of the molecules are normal. The molecules are stacked in clearly separated layers. At center of the layer, there are cholesteryl-C(17) side chain interactions. The interface region between layers is occupied by the loosely packed methyl carbonate chains. The structure of cholesteryl propyl carbonates have two propyl carbonates have two molecules(A, B) that are not related by crystal symmetry and have their tetracyclic system almost parallel to each other. Cholesteryl-cholesteryl interactions between symmetry related A-molecules, and cholesteryl-C(17) side chain interactions between symmetry related B-molecules occur at the center of the layers and these molecules stack along 2₁ screw axes. There are also C(17)chain-carbonate chain and C(17)chain-C(17)chain interactions in the interface region between layers. There is efficient packing between cholesteryl ring systems in propyl carbonates. Temperature ranges of cholesteric mesophases of cholesteryl alkyl cargonates are narrow for methyl, pentyl and hexyl carbonates, and rather broader for ethyl and propyl carbonates. Cholesteryl-isotropic transitions change very little with chain length.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.107-108
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• 2008

The spectacular development of AMLCDs, been made possible by a-Si:H technology, still faces two major drawbacks due to the intrinsic structure of a-Si:H, namely a low mobility and most important a shift of the transfer characteristics of the TFTs when submitted to bias stress. This has lead to strong research in the crystallization of a-Si:H films by laser and furnace annealing to produce polycrystalline silicon TFTs. While these devices show improved mobility and stability, they suffer from uniformity over large areas and increased cost. In the last decade we have focused on microcrystalline silicon (${\mu}c$-Si:H) for bottom gate TFTs, which can hopefully meet all the requirements for mass production of large area AMOLED displays [1,2]. In this presentation we will focus on the transfer of a deposition process based on the use of $SiF_4$-Ar-$H_2$ mixtures from a small area research laboratory reactor into an industrial gen 1 AKT reactor. We will first discuss on the optimization of the process conditions leading to fully crystallized films without any amorphous incubation layer, suitable for bottom gate TFTS, as well as on the use of plasma diagnostics to increase the deposition rate up to 0.5 nm/s [3]. The use of silicon nanocrystals appears as an elegant way to circumvent the opposite requirements of a high deposition rate and a fully crystallized interface [4]. The optimized process conditions are transferred to large area substrates in an industrial environment, on which some process adjustment was required to reproduce the material properties achieved in the laboratory scale reactor. For optimized process conditions, the homogeneity of the optical and electronic properties of the ${\mu}c$-Si:H films deposited on $300{\times}400\;mm$ substrates was checked by a set of complementary techniques. Spectroscopic ellipsometry, Raman spectroscopy, dark conductivity, time resolved microwave conductivity and hydrogen evolution measurements allowed demonstrating an excellent homogeneity in the structure and transport properties of the films. On the basis of these results, optimized process conditions were applied to TFTs, for which both bottom gate and top gate structures were studied aiming to achieve characteristics suitable for driving AMOLED displays. Results on the homogeneity of the TFT characteristics over the large area substrates and stability will be presented, as well as their application as a backplane for an AMOLED display.