• 한국안전학회지
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• 제38권2호
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• pp.1-7
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• 2023

Fiber-metal laminates (FMLs) and polymer matrix composites (PMCs) are formed in various ways. In particular, FMLs in which aluminum is laminated as a reinforced layer are widely used. Also, glass fiber-reinforced plastics (GFRPs) are generally applied as fiber laminates. The bonding interface layer between the aluminum and fiber laminate exhibits low strength when subjected to hot press fabrication in the event of delamination fracture at the interface. This study presents a simple method for strengthening the interface bonding between the aluminum metal and GFRP layer of FML composites. The surfaces of the aluminum interface layer are engraved with three kinds of patterns by using the laser machine before the hot press works. Furthermore, the effect of the laser patterns on the interfacial toughness is investigated. The interfacial toughness was evaluated by the energy release rate (G) using an asymmetric double cantilever bending specimen (ADCB). From the experimental results, it was shown that the strip type pattern (STP) has the most proper pattern shape in GFRP/Al FML composites. Therefore, this will be considered a useful method for the safety assessment of FML composite structures.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.427-428
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• 2008

본 논문에서는 IEEE 802.11 MAC Layer의 Reception, Transmission 검증을 위해 PLI (Programing Language Interface)를 이용한 방법을 제안한다. PLI를 이용한 검증은 시스템 Level의 검증으로써 설계단계에서 문제점을 확인하고 수정할 수 있다. 그러므로 불필요한 개발비의 낭비를 줄일 수 있고 개발 기간 단축의 효과를 거둘 수 있다. 검증을 위해 Mentor Graphics 사의 HDL (Hardware Description Language) 시뮬레이터인 Modelsim 6.1g Version을 사용하고 PLI를 이용하여 검증 환경을 구축한다.

• 한국전산구조공학회:학술대회논문집
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• 한국전산구조공학회 2002년도 가을 학술발표회 논문집
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• pp.146-152
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• 2002

In this study, the singular thermal stresses induced during cooling down from high temperature to room temperature have been analyzed for the viscoelastic thin layer. The time domain boundary element method has been employed to investigate the behavor of stresses for the whole interface. Within the context of a linear viscoelastic theory, a stress singularity exists at the point where the interface between the elastic substrate and the viscoelastic thin layer intersects the free surface.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2012년도 춘계학술발표대회
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• pp.59.2-59.2
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• 2012

Polymer solar cells utilize bulk heterojunction (BHJ) type photo-active layer in which the electron donating polymer and electron accepting $C_{60}$ derivatives are blended. We found there is significant charge recombination at the interface between the BHJ active layer and electrode. The charge recombination at the interface was effectively reduced by inserting wide band gap inorganic interfacial layer, which resulted in efficiency and stability enhancement of BHJ polymer solar cell.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.339-339
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• 2013

We study on the optical and electrical properties of indium-free ZTO(ZnSnO)/Ag/ZTO (ZAZ) multilayer electrodes for the low-cost transparent electrode. In the first step, each single layer was deposited using rf magnetron in-line sputter with various working pressure based on $O_2$/$Ar+O_2$ ratio (0~3%) and power at room temperature. Secondly, we studied the optical and electrical properties by analyzing the refractive index, extinction coefficient, transmittance and resistivity of each layer. Finally, we optimized the thickness of each layer using macleod simulation program based on the analyzed optical properties and fabricated the multilayer electrode. As a result, We achieved a low sheet resistance of $11{\Omega}$/sq and anaverage transmittance of 80% in the visible region of light (380~780 nm). This indicates that indium-free ZAZ multilayer electrode is a promising low-cost and low-temperature processing electrode scheme.

• 한국진공학회지
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• 제12권S1호
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• pp.63-66
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• 2003

It is experimentally shown that a $TiO_2$ film on Si(111) substrate was prepared by using the technique of D.C. reaction sputter deposition with $Ar^{+}$ ion beam bombardment, and a layer-like structure was observed from the depth profile of the interface between $TiO_2$ film and Si substrate with Scanning Electron Microscopy and Electron Probe. It was also surprisingly discovered that Ti atoms could be detected at about 9 $\mu$m depth. The $TiO_2$-Si interface bombarded by $Ar^{+}$ ion beams revealed multi-layer structures, a mechanism might be caused by defect diffusion, impurity and matrix relocation. Multi-relocations of impurity and matrix atoms were as a result of profile broadening of the $TiO_2$-Si interface, and the spread due to matrix relocation in this system is shown to exceed much more the spread due to impurity relocation.

• 한국추진공학회:학술대회논문집
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• 한국추진공학회 2012년도 제38회 춘계학술대회논문집
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• pp.230-237
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• 2012

확대부 내열재의 스틸과 FRP 사이에 존재하는 미접착 결함과 미충전 결함을 검출하기 위해 초음파 공진법을 적용하였다. 초음파 공진법은 초음파 신호가 증폭되기 때문에 펄스에코법으로 검출하기 어려운 미접착 결함 및 에폭시 미충전 결함을 쉽게 검출할 수 있다. 공진 주파수는 삼중 매질의 음압 반사계수를 이용하여 예측하였고, 시험편의 초음파 신호에 대해 고속푸리에변환을 실시하여 측정하였다. 예측한 공진 주파수는 측정한 공진 주파수와 일치하므로 초음파 공진을 입증하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.180-180
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• 2010

Thin film transistors (TFTs) based on oxide semiconductors have emerged as a promising technology, particularly for active-matrix TFT-based backplanes. Currently, an amorphous oxide semiconductor, such as InGaZnO, has been adopted as the channel layer due to its higher electron mobility. However, accurate and repeatable control of this complex material in mass production is not easy. Therefore, simpler polycrystalline materials, such as ZnO and $SnO_2$, remain possible candidates as the channel layer. Inparticular, ZnO-based TFTs have attracted considerable attention, because of their superior properties that include wide bandgap (3.37eV), transparency, and high field effect mobility when compared with conventional amorphous silicon and polycrystalline silicon TFTs. There are some technical challenges to overcome to achieve manufacturability of ZnO-based TFTs. One of the problems, the stability of ZnO-based TFTs, is as yet unsolved since ZnO-based TFTs usually contain defects in the ZnO channel layer and deep level defects in the channel/dielectric interface that cause problems in device operation. The quality of the interface between the channel and dielectric plays a crucial role in transistor performance, and several insulators have been reported that reduce the number of defects in the channel and the interfacial charge trap defects. Additionally, ZnO TFTs using a high quality interface fabricated by a two step atomic layer deposition (ALD) process showed improvement in device performance In this study, we report the fabrication of high performance ZnO TFTs with a $Si_3N_4$ gate insulator treated using plasma. The interface treatment using electron cyclotron resonance (ECR) $O_2$ plasma improves the interface quality by lowering the interface trap density. This process can be easily adapted for industrial applications because the device structure and fabrication process in this paper are compatible with those of a-Si TFTs.

• Journal of Communications and Networks
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• 제6권4호
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• pp.295-306
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• 2004

In this paper, a novel air-interface is presented for Fleet-Net1, a self-organizing network for inter-vehicle and vehicle-toroadsidecommunication. The air-interface is based upon the lowchip-rate version of UMTS/TDD. To adapt the cellular UMTS standard to an air-interface for ad hoc networks, changes of the physical layer, medium access control sub-layer and radio resource management are required. An overview of the required modifications is given here. Particularly, a decentralized synchronization mechanism is presented and analyzed by means of simulations. Furthermore, changes for the medium access control are explained in detail, which allow for an efficient operation in partly meshed networks and prioritization. Performance results of the overall system considering throughput and delay are derived by means of analytical evaluations and event-driven simulations. Based on realistic mobility models, it is shown that the presented solution provides a robust communication platform even in vehicular environments. The proposed air-interface is a cost-effective solution not only for inter-vehicle communication, but also for ad hoc networking in general, benefiting from the mass-market of UMTS.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.95-96
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• 2005

The general method and mechanism for the polarity control of heteroepitaxial wurtzite films, such as ZnO and GaN, by interface engineering via plasma-assisted molecular beam epitaxy are addressed. We proposed the principle and method controlling the crystal polarity of ZnO on GaN and GaN on ZnO. The crystal polarity of the lower film was maintained by forming a heterointerfce without any interface layer between the upper and the lower layers. However the crystal polarity could be changed by forming the heterointerface with the interface layer having an inversion center. The principle and method suggested here give us a promising tool to fabricate polarity inverted heterostructures, which applicable to invent novel heterostructures and devices.