• Journal of the Korean Society of Visualization
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• v.14 no.1
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• pp.57-61
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• 2016

We report a finding of fast(exceeding 2,000 K/s) heating of polydimethylsiloxane(PDMS), one of the most commonly-used microchannel materials, under cyclic loadings at high(~MHz) frequencies. A microheater was created based on the finding. The heating mechanism utilized vibration damping of sound waves, which were generated and precisely manipulated using a conventional surface acoustic wave(SAW) microfluidic system, in PDMS. The penetration depths were measured to range from $210{\mu}m$ to $1290{\mu}m$, enough to cover most microchannel heights in microfluidic systems. The energy conversion efficiency was SAW frequency-dependent and measured to be the highest at around 30 MHz. Independent actuation of each interdigital transducer(IDT) enabled independent manipulation of SAWs, permitting spatiotemporal control of temperature on the microchip. All the advantages of this microheater facilitated a two-step continuous flow polymerase chain reaction(CFPCR) to achieve the billion-fold amplification of a 134 bp DNA amplicon in less than 3 min. In addition, a technique was developed for establishing dynamic free-form temperature gradients(TGs) in PDMS as well as in gases in contact with the PDMS.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.80-80
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• 2000

Surface acoustic wave (SAW) devices have become more important as mobile telecommunication systems need h호-frrequency, low-loss, and down-sized components. Higher-frequency SAW divices can be more sasily realized by developing new h호-SAW-velocity materials. The ZnO/diamond/Si multilasyer structure is one of the most promising material components for GHz-band SAW filters because of its SAW velocity above 10,000 m/sec. Silicon carbide is also a potential candidate material for high frequency, high power and radiation resistive electronic devices due to its superior mechanical, thermal and electronic properties. However, high price of commercialized 6- or 4H-SiC single crystalline wafer is an obstacle to apply SiC to high frequency SAW devices. In this study, single crystalline 3C-SiC thin films were grown on Si (100) by MOCVD using bis-trimethylsilymethane (BTMSM, C7H20Si7) organosilicon precursor. The 3C-SiC film properties were investigated using SEM, TEM, and high resolution XRD. The FWHM of 3C-SiC (200) peak was obtained 0.37 degree. To investigate the SAW propagation characteristics of the 3C-SiC films, SAW filters were fabricated using interdigital transducer electrodes on the top of ZnO/3C-SiC/Si(100), which were used to excite surface acoustic waves. SAW velocities were calculated from the frequency-response measurements of SAW filters. A generalized SAW mode. The hard 3C-SiC thin films stiffened Si substrate so that the velocities of fundamental and the 1st mode increased up to 5,100 m/s and 9,140 m/s, respectively.