• Proceedings of the KSR Conference
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• 2007.05a
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• pp.317-324
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• 2007

Until now, the railway has been constructed using track with jointed rails of relatively short lengths to allow thermal expansion in hot summer months. These joints weaken the track structurally and increase track maintenance cost and power consumption of the running train. The CWR(Continuous Welded Rail) Track is the solution of these drawbacks. Although the CWR track not only reduces the track maintenance cost but also increases the life cycle of track components, the stability of the track is highly affected by change of temperatures and vehicle load. A three dimensional nonlinear analysis which considers rail, fastening system and tie has been performed to understand structural behavior of the CWR track. In this case, the translational and rotational stiffness values of fastening system have not been studied. The fastening system makes ties and rails connect. In this study, the stiffness values of various types of fastening systems which consist of clips, rail-pads and insulators are determined by the experiment. The experimental results of the fastening system are compared with the results of parametric study that is performed to investigate the sensitivity of fastening system on stability of CWR track.

• Tunnel and Underground Space
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• v.8 no.3
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• pp.194-199
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• 1998

This research was aimed to figure out the trend of dust diffusion at open pit limestone mine for assessing the environmental impacts on the high voltage power transmission line. It is rather easy to assess the dust generation and size distribution of limestone dust at the blasting site, but it is very hard to assess the expected area of dust diffusion and amount of dust fall by the distances from the dust source. In this research, a 3-dimensional fluid dynamic simulation software (3D-Flow) was used for analysing the above mentioned matters to assess the impacts to the insulators on the transmission tower by the blasting dust. It was verfied that the 3D-Flow is reliable tool for simulating dust movement, and the limestone dust is not much hazardous to the power transmission line.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.4
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• pp.215-217
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• 2016

For the improvement of the anti-pollution properties of porcelain electrical insulators, in this study, we have applied the functional film to the surface of insulator. The functional films were coated on the ceramic substrates which components were like the porcelain electrical insulator. The coating material was applied to ceramic substrate by spray coating method and then the film was cured at around $300^{\circ}C$ for 10 minutes with different gas ambient, such as $O_2$, $N_2$, and only vacuum. We have measured the contact angle of the coated surface, and obtained the lowest angle ($8.9^{\circ}$) and a strong hydrophilic property at vacuum condition. The anti-pollution properties were measured, revealing that as the contact angle decreased, the anti-pollution properties improved. The mechanical hardness and adhesion were both excellent regardless of the annealing ambient.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2008.10a
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• pp.604-607
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• 2008

In this study, p-channel silicon-oxide-nitride-oxide-silicon (SONOS) transistors are fabricated and characterized as an unit cell for NAND flash memory. The SONOS transistors are fabricated by $0.13{\mu}m$ low power standard logic process technology. The thicknesses of gate insulators are $20{\AA}$ for the tunnel oxide, $14{\AA}$ for the nitride layer, and $49{\AA}$ for the blocking oxide. The fabricated SONGS transistors show low programming voltage, fast erase speed, and relatively good retention and endurance.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.99-99
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• 2010

Recently, amorphous transparent oxide semiconductors (TOS) have been widely studied for many optoelectronic devices such as AM-OLED (active-matrix organic light emitting diodes). The TOS TFTs using a-IGZO channel layers exhibit a high electron mobility, a smooth surface, a uniform deposition at a large area, a high optical transparency, a low-temperature fabrication. In spite of many advantages of the sputtering process such as better step coverage, good uniformity over large area, small shadow effect and good adhesion, there are not enough researches about characteristics of a-IGZO thin films. In this study, therefore, we focused on the electrical properties of a-IGZO thin films as a channel layer of TFTs. TFTs with the a-IGZO channel layers and Y2O3 gate insulators were fabricated. Source and drain layers were deposited using ITO target. TFTs were deposited on unheated non-alkali glass substrates ($5cm{\times}5cm$) with a sintered ceramic IGZO disc (3 inch $\varnothing$, 5mm t), Y2O3 disc (3 inch $\varnothing$, 5mm t) and ITO disc (3 inch $\varnothing$, 5mm t) as a target by magnetron sputtering method. The O2 gas was used as the reactive gas. Deposition was carried out under various sputtering conditions to investigate the effect of sputtering process on the characteristics of a-IGZO thin films. Correlation between sputtering factors and electronic properties of the film will be discussed in detail.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.366.1-366.1
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• 2014

The rare-earth oxides M2O3 (M=La, Pr, Gd) are good insulators due to their large band gap (3.9eV for Pr2O3, 5.6eV for Gd2O3), they have high dielectric constants (Gd2O3 K=16, La2O3 K=27, Pr2O3 K=26-30) and, compared to ZrO2 and HfO2, they have higher thermodynamic stability on silicon making them very attractive materials for high-K dielectric applications. Another attractive feature of some rare-earth oxides is their relatively close lattice match to that of silicon, offering the possibility of epitaxial growth and eliminating problems related to grain boundaries in polycrystalline films. Metal-organic chemical vapor deposition (MOCVD) has been preferred to PVD methods because of the possibility of large area deposition, good composition control and excellent conformal step coverage. Herein we report on the synthesis of rare-earth oxide complexes with designed alkoxide and aminoalkoxide ligand. These novel complexes have been characterized by means of FT-IR, elemental analysis, and thermogravimetric analysis (TGA).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.31-35
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• 2002

It is hard to expect excellent electrical, mechanical and chemical properties from most of the composite materials presently used as insulators due to insufficient wettability property caused by the difference of interfacial properties between the matrix material and the reinforcer. Therefore, various interfacial coupling agents have been developed to improve the interfacial properties of composite materials. But if the wettable coupling agents are used outdoor for a long time, change in quality takes place in the coupling agents themselves, bringing about deterioration of the properties of the composite materials. In this study, composite materials were put to dry interfacial treatment by use of plasma technology. It has been presented that the optimum parameters for the best wettability of the samples at the time of generation of plasma were oxygen atmosphere, 0.1 torr of system pressure, 100 W of discharge power, and 3 minutes of discharge time. Also, the surface resistance rate and dielectric property were improved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.217-220
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• 2001

The possibility of cerium dioxide $(CeO_2)$ thin films as insulators of metal erroelectric insulator semiconductor (MFIS) structures have been studied. The etching $CeO_2$ thin films have been perfonned in an inductively coupled $Cl_{2}/CF_{4}/Ar$ plasma. The high etch rate of the $CeO_2$ thin film was $250\AA /m$ at a 10 % addition of $Cl_2$ into the $Ar(80)/CF_{4}(20)$. The surface reaction of the etched $CeO_2$ thin films was investigated using X-ray photoelectron spectroscopy (XPS) analysis. There are Ce-Cl and Ce-F bonding by chemical reaction between Cl, F and Ce. These products can be removed by the physical bombardment of incident Ar ions.

• 전기의세계
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• v.26 no.6
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• pp.78-85
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• 1977

This paper studies flashover voltage and surface corona loss of A.C and D.C in the mixed gas of air and SF$_{6}$ for solid insulators P.V.C, arcylic, glass and bakelite in two cases. In one case, those solids are covered with transformer oil and the other case, those solids are not covered with it. 1) The flashover voltage for each solids in SF$_{6}$ is more than three times compared with that in the air. The flashover voltage for P.V.C is the highest and then arcylic, glass, bakelite in a decreasing order. 2) The more the amount of SF$_{6}$ in the mixing ratio, the less corona loss. The P.V.C shows the least amount of corona loss and the bakelite the largest. 3) Compared with the corona loss of positive polarity and the negative polarity, the former has less corona loss than the latter. 4) The more the number of flashover discharge, the less insulation of each solids, but in case of bakelite, insulation almost vanishes after a couple of discharge. 5) When each insulator is covered with transformer oil, the flashover voltage generally increases and the corona loss decreases.eases.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.4
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• pp.261-268
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• 1999

Laser-induced thermochemical etching has been recognized as a new powerful method for processing a variety of materials, including metals, semiconductors, ceramics, insulators and polymers. This study presents characteristics of direct etching for Si substrate using focused argon ion laser beam in aqueous KOH and $CCl_2F_2$ gas. In order to determine process conditions, we first theoretically investigated the temperature characteristics induced by a CW laser beam with a gaussian intensity distribution on a silicon surface. Major process parameters are laser beam power, beam scan speed and reaction material. We have achieved a very high etch rate up to $434.7\mum/sec$ and a high aspect ratio of about 6. Potential applications of this laser beam etching include prototyping of micro-structures of MEMS(micro electro mechanical systems), repair of devices, and isolation of opto-electric devices.