• Title/Summary/Keyword: Insulating layer

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Prototype Electromagnetic-Noise Filters Incorporated with Nano-Granular Co41Fe38Al13O8 Soft Ferromagnetic Thin Films on Coplanar Transmission Lines

  • Sohn, Jae-Cheon;Byun, Dong-Jin
    • Journal of the Korean Ceramic Society
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    • v.43 no.2 s.285
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    • pp.74-78
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    • 2006
  • A non-integrated type noise filter on a Coplanar Waveguide (CPW) transmission line is demonstrated by using a highly resistive $Co_{41}Fe_{38}Al_{13}O_8$ nanogranular thin film with the dimensions of $4\;mm (\iota)\times4\;mm(\omega)\times0.1\;{\mu}m(t)$. The noise suppression characteristics are evaluated without placing an insulating layer between the CPW line and the magnetic thin film. The insertion loss is very low being less than 0.3 dB and this low value is maintained up to 2 GHz. At a ferromagnetic resonance frequency of 3.3 GHz, the power loss is very large and the degree of noise attenuation is measured to be 3 dB. This level of noise attenuation is still small for real applications; however, considering the small magnetic volume used in this work, further improvement is expected by simply increasing the magnetic volume and by integrating the magnetic thin film into the CPW transmission line.

The structure of $Ga_2O_3$ nanomaterials synthesized by the GaN single crystal (GaN 단결정에 의해 제조된 $Ga_2O_3$ 나노물질의 구조)

  • 박상언;조채룡;김종필;정세영
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2003.11a
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    • pp.120-120
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    • 2003
  • The metallic oxide nanomaterials including ZnO, Ga$_2$O$_3$, TiO$_2$, and SnO$_2$ have been synthesized by a number of methods including laser ablation, arc discharge, thermal annealing procedure, catalytic growth processes, and vapor transport. We have been interested in preparing the nanomaterials of Ga$_2$O$_3$, which is a wide band gap semiconductor (E$_{g}$ =4.9 eV) and used as insulating oxide layer for all gallium-based semiconductor. Ga$_2$O$_3$ is stable at high temperature and a transparent oxide, which has potential application in optoelectronic devices. The Ga$_2$O$_3$ nanoparticles and nanobelts were produced using GaN single crystals, which were grown by flux method inside SUS$^{TM}$ cell using a Na flux and exhibit plate-like morphologies with 4 ~ 5 mm in size. In these experiments, the conventional electric furnace was used. GaN single crystals were pulverized in form of powder for the growth of Ga$_2$O$_3$ nanomaterials. The structure, morphology and composition of the products were studied mainly by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM), and high-resolution transmission electron microscopy (HRTEM).).

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Electrical properties of XLPE and Semiconductor Materials for Power Cable (전력케이블의 가교폴리에틸렌과 반도전 재료의 전기적 특성)

  • Lee, Ju-Hong;Kim, Hyang-Kon
    • Proceedings of the KIEE Conference
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    • 2008.09a
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    • pp.207-210
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    • 2008
  • In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and $tan{\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4}$, $2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan6 of XLPE/semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan6 was small. Also, To improve mean-life and reliability of power cable in this study, we have investigated chemical properties showing by changing the content of carbon black that is semiconductive additives for underground power transmission. Specimens were made of sheet form with the three of existing resins and the nine of specimens for measurement. Chemical properties of specimens was measured by FT-ATR (Fourier Transform Attenuated Total Reflectance). The condition of specimens was a solid sheet. We could observe functional group (C=O, carbonyl group) of specimens through FT-ATR. From these experimental result, the concentration of functional group (C=O) was high according to increasing the content of carbon black. We could know EEA was excellent more than other specimens from above experimental results.

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Interface Charateristics of Plasma co-Polymerized Insulating Film/Pentacene Semiconductor Film (플라즈마 공중합 고분자 절연막과 펜타센 반도체막의 계면특성)

  • Shin, Paik-Kyun;Lim, H.C.;Yuk, J.H.;Park, J.K.;Jo, G.S.;Nam, K.Y.;Park, J.K.;Kim, Y.W.;Chung, M.Y.
    • Proceedings of the KIEE Conference
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    • 2009.07a
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    • pp.1349_1350
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    • 2009
  • Thin films of pp(ST-Co-VA) were fabricated by plasma deposition polymerization (PVDPM) technique. Properties of the plasma polymerized pp(ST-Co-VA) thin films were investigated for application to semiconductor device as insulator. Thickness, dielectric property, composition of the pp(ST-Co-VA) thin films were investigated considering the relationship with preparation condition such as gas pressure and deposition time. In order to verify the possibility of application to organic thin film transistor, a pentacene thin film was deposited on the pp(ST-Co-VA) insulator by vacuum thermal evaporation technique. Crystalline property of the pentacene thin film was investigated by XRD and SEM, FT-IR. Surface properties at the pp(ST-Co-VA)/pentacene interface was investigated by contact angle measurement. The pp(ST-Co-VA) thin film showed a high-k (k=4.6) and good interface characteristic with pentacene semiconducting layer, which indicates that it would be a promising material for organic thin film transistor (OTFT) application.

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Epitaxial growth of silicon thin films on insulating ($CeO_2$/Si) substrates (절연체 ($CeO_2$/Si)위에 성장된 실리콘 박막의 특성 연구)

  • 양지훈;문병식;김관표;김종걸;정동근;노용한;박종윤
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.322-326
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    • 1999
  • We have investigated the growing process of a silicon film on the $CeO_2/Si$ surface. The silicon was deposited by using electron beam deposition method. The $CeO_2$(111) film was grown on a (111)-oriented silicon substrate at $700^{\circ}C$ at oxygen [partial pressure of $5\times10^{-5}$ Torr. To investigate the condition of epitaxial growth of si films on the $CeO_2/Si$ substrate, we deposited Si at various temperature니 The overlayer silicon was characterized by using x-ray diffraction(XRD). double crystal x-ray diffraction (DCXRD), and transmission electron microscopy (TEM). At temperature higher than $690^{\circ}C$, $CeO_2$ layer was observed at the $CeO_2/Si$ interface, which was formed by chemical reaction with silicon and oxygen dissociated from $CeO_2$. When silicon was deposited on the $CeO_2/Si$ at $620^{\circ}C$, silicon grew epitaxially along the (111)-direction.

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The Properties of ZnS:Mn AC TFEL Device with $BaTiO_3$/$Si_3$$N_4$ Insulating Thin Film ($BaTiO_3$/$Si_3$$N_4$ 이중절연막 구조의 교류구동형 ZnS:Mn 박막 EL 표시 조자의 특성)

  • 송만호;윤기현;이윤희;한택상;오명환
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.121-127
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    • 1994
  • The capability for application of rf magnetron sputterred and post annealed BaTiO$_{3}$ thin films in dielectrics AC drived TFELD(thin film electroluminescent device) was investigated. The dielectric constant of the thin films slightly increased up to about 25 with increase fothe post annealing temperature in the range of 210$^{\circ}C$-480$^{\circ}C$. The dielectric loss was about 0.005-0.01 except for the high frequency range above 100kHz and nearly independent on post annealing temperature. The BaTiO$_{3}$ thin film used for TFELD was annealed at 480.deg. C and Si$_{3}$N$_{4}$ thin film was inserted between BaTiO$_{3}$, lower dielecrics and ZnS:Mn, phosphor layer for stable driving of the device and for fear of interdiffusion. Regardless of the frequency of the applied sine wave voltage, the threshold voltage of the prepared TFELD was 65volt and saturated brightness was about 3000cd/m$^{2}$ at 130volt(2kHz sine wave), 65volt above V$_{TH}$.

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Predicting the moment capacity of RC slabs with insulation materials exposed to fire by ANN

  • Erdem, Hakan
    • Structural Engineering and Mechanics
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    • v.64 no.3
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    • pp.339-346
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    • 2017
  • Slabs prevent harmful effects of fire that may occur in any floor. However, it is necessary to protect the slabs from fire. Insulation materials may be appropriate to protect reinforced concrete (RC) slab from elevated temperature. In the present study, a model has been developed in artificial neural network (ANN) to predict the moment capacity ($M_r$) of RC slabs exposed to fire with insulation material. 672 data were obtained for ANN model through author's prepared program. Input layer in model consisted of seven input parameters; such as effective depth (d), ratio of d'/d, thermal conductivity coefficient ($k_{insulation}$), insulation materials thickness ($L_{insulation}$), reinforcement area ($A_{st}$), fire exposure time ($t_{\exp}$), and concrete compressive strength ($f_c$). The predicted $M_r$ by ANN was consistent with the obtained $M_r$ by author. It is proposed to ease computational complexity in determining $M_r$ using ANN. The effects of using insulation material on the moment capacity in RC slabs were also investigated. Insulating material with low thermal conductivity has been found to be more effective for durability to high temperature.

The Evaluation of Thermal Aging Characteristics in Insulating Paper for the Use of the Pole Transformers (가속열화 방법에 의한 주상변압기 절연물의 열열화 특성 평가)

  • Lee, Byung-Sung;Song, Il-Keun;Lee, Jae-Bong;Park, Dong-Bae;Han, Sang-Ok
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.100-103
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    • 2003
  • The primary insulation system used in an oil-filled transformer is kraft paper, wood, porcelain and oil. Modern transformers use paper that is chemically treated to improve its tensile strength properties and resistance to aging caused by immersion in oil. But these insulation papers are mainly aged to thermal stress. Over the course of the insulation paper and oil's life it is exposed to high temperatures, oxygen and water. Its interaction with the steel of the tank and core plus the copper and aluminium of the windings will eventually cause the chemical properties of the oil to decay. High temperature have an effect on mechanical strength of cellulous paper using the layer insulation. We made two aging cell in which thermal aging tests of insulation papers and mineral oil are conducted. It is measured dielectric strength, number of acid, moisture, etc. of insulation paper and oil aged in the aging cells.

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Power Cable Ampacity and Influential Factors Analysis under Operation

  • Tong, Qiang;Qi, Jianping;Wang, Yanling;Liang, Likai;Meng, Xiangxing;Zhang, Qiang
    • Journal of Information Processing Systems
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    • v.14 no.5
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    • pp.1136-1149
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    • 2018
  • With the increasing of urban electricity demand, making the most use of the power cable carrying capacity has become an important task in power grid system. Contrary to the rated ampacity obtained under extremely conservative conditions, this paper presents the various steady value of cable ampacity by using the changing surrounding parameters under operation, which is based on cable ampacity calculation equation under the IEC-60287 standard. To some degree, the cable ampacity analysis of actual surroundings improves the transmission capacity of cables. This paper reveals the factors that influence cable ampacity such as insulating layer thickness, allowable long-term conductor temperature, the ambient temperature, soil thermal resistance coefficient, and so on, then gives the class of the influence of these parameters on the ampacity, which plays a great role in accurately calculating the real-time ampacity and improving the utilization rate of cable in the complex external environment condition. Furthermore, the transient thermal rating of the cable is analyzed in this paper, and temperature variation of the conductor under different overload conditions is discussed, which provides effective information for the operation and control of the system.

Optical Properties of Al and Al2O3 Coated ZnO Nanorods (원자층증착법으로 ZnO:Al과 Al2O3를 코팅한 ZnO 나노막대의 광학적 특성)

  • Shin, Y.H.;Lee, S.Y.;Kim, Yong-Min
    • Journal of the Korean Vacuum Society
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    • v.19 no.5
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    • pp.385-390
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    • 2010
  • We studied the optical characteristics of ZnO:Al and $Al_2O_3$ coated ZnO nanorods. When ZnO:Al is deposited around the undoped ZnO nanorods, thermal diffusion of Al into ZnO gives rise to decrease the binding energy of neutral donor bound exciton whereas an insulating Al2O3 is coated around ZnO, we found that semiconducor-insulator interface states play an important role in optical quenching.