• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.2
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• pp.88-93
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• 1994

We fabricated a large-scale photovoltaic device for detecting-3-5$\mu$m IR, by forming of n$^{+}$-p junction in the $Hg_{1-x}Cd_{x}$Te (MCT) layer which was grown by LPE on CdTe substrate. The composition x of the MCT epitaxial layer was 0.295 and the hole concentration was 1.3${\times}10^{13}/cm^{4}$. The n$^{+}$-p junction was formed by B+ implantation at 100 keV with a does 3${\times}10^{11}/cm^{2}. The n$^{+}$ region has a circular shape with 2.68mm diameter. The vacuum-evaporated ZnS with resistivity of 2${\times}10^{4}{\Omega}$cm is used as an insulating layer over the epitaxial layer. ZnS plays the role of the anti-reflection coating transmitting more than 90% of 3~5$\mu$m IR. For ohmic contacts, gole was used for p-MCT and indium was used for n$^{+}$-MCT. The fabrication took 5 photolithographic masks and all the processing temperatures of the MCT wafer were below 90$^{\circ}C$. The R,A of the fabricated devices was 7500${\Omega}cm^{2}$. The carrier lifetime of the devices was estimated 2.5ns. The junction was linearly-graded and the concentration slope was measured to be 1.7${\times}10^{17}/{\mu}m$. the normalized detectivity in 3~5$\mu$m IR was 1${\times}10^{11}cmHz^{12}$/W, which is sufficient for real application.

• Journal of Electrochemical Science and Technology
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• v.10 no.2
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• pp.196-205
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• 2019

Ni-rich layered oxides $Li(Ni_xCo_yMn_z)O_2$ (x + y + z = 1) have been extensively studied in recent times owing to their high capacity and low cost and can possibly replace $LiCoO_2$ in the near future. However, these layered oxides suffer from problems related to the capacity fading, thermal stability, and safety at high voltages. In this study, we use surface coating as a strategy to improve the thermal stability at higher voltages. The uniform and conformal $Al_2O_3$ coating on prefabricated electrodes using atomic layer deposition significantly prevented surface degradation over prolonged cycling. Initial capacity of 190, 199, 188 and $166mAh\;g^{-1}$ is obtained for pristine, 2, 5 and 10 cycles of ALD coated samples at 0.2C and maintains 145, 158, 151 and $130mAh\;g^{-1}$ for high current rate of 2C in room temperature. The two-cycle $Al_2O_3$ modified cathode retained 75% of its capacity after 500 cycles at 5C with 0.05% capacity decay per cycle, compared with 46.5% retention for a pristine electrode, at an elevated temperature. Despite the insulating nature of the $Al_2O_3$ coating, a thin layer is sufficient to improve the capacity retention at a high temperature. The $Al_2O_3$ coating can prevent the detrimental surface reactions at a high temperature. Thus, the morphology of the active material is well-maintained even after extensive cycling, whereas the bare electrode undergoes severe degradation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.5
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• pp.191-195
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• 2023

Three-layer nano-coated films in applications for the back cover of mobile cellular phones were prepared utilizing a roll-to-roll continuous process. By introducing a coating layer with a ceramic/metal/ceramic three-layer structure, the inherent reflective properties of the metals were maintained while electrically insulating properties were maintained. The thickness of the composite coating layer on a large area PET film with a length of 1,500 nm and width of 500 nm was less than 60 nm, and a uniform thickness was maintained in all areas. The transmittance according to the wavelength range (240~1600 nm) of the nanocoating film gradually increases as the wavelength increases, and is about 48 % at 1,000 nm, which is within the infrared region, and about 35.5 % at 550 nm, which is within the visible region. These results meet the required level of coated backcover (< 40 %).

• Korean Journal of Materials Research
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• v.16 no.5
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• pp.302-307
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• 2006

The formation and processing of organic insulators on the device performance have been studied in the fabrication of organic thin film transistors (OTFTs). The series of polyvinyls, poly-4-vinyl phenol(PVP) and polyvinyltoluene (PVT), were used as solutes and propylene glycol monomethyl ether acetate(PGMEA) as a solvent in the formation of organic insulators. The cross-linking of organic insulators was also attempted by adding the thermosetting material, poly (melamine-co-formaldehyde) as a hardener in the compound. The electrical characteristics measured in the metal-insulator-metal (MIM) structures showed that insulating properties of PVP layers were generally superior to those of PVT layers. Among the layers of PVP series: PVP(10 wt%) copolymer, 5 wt% cross-linked PVP(10 wt%), PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%), the 10 wt% cross-linked PVP(20 wt%) layer showed the lowest leakage current characteristics. Finally, inverted staggered OTFTs using the PVP(20 wt%) copolymer, 5 wt% cross-linked PVP(20 wt%) and 10 wt% cross-linked PVP(20 wt%) as gate insulators were fabricated on the polyether sulphone (PES) substrates. In our experiments, we could obtain the maximum field effect mobility of 0.31 $cm^2/Vs$ in the device from 5 wt% cross-linked PVP(20 wt%) and the highest on/off current ratio of $1.92{\times}10^5$ in the device from 10 wt% cross-linked PVP(20 wt%).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.12
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• pp.751-756
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• 2017

A molding-type power inductor is an inductor that uses a hybrid material that is prepared by mixing a ferrite metal powder coated with an insulating layer and an epoxy resin, which is injected into a coil-embedded mold and heated and cured. The fabrication of molding-type inductors requires various techniques such as for coil formation and insertion, improving the magnetic properties of soft magnetic metal powder, coating an insulating film on the magnetic powder surface, and increasing the packing density by well dispersing the powder in the epoxy resin. Among these aspects, researches on additives that can disperse the metal soft magnetic powder having the greatest performance in the epoxy resin with high charge have not been reported yet. In this study, we investigated the effect of silanes, KBM-303 and KBM-403, and a commercial dispersant on the dispersion of metal soft magnetic powders in epoxy resin. The sedimentation height and viscosity were measured, and it was confirmed that the silane KBM-303 was suitable for dispersion. For this silane, the packing density was as high as about 72.49%. Moreover, when 1.2 wt% of dispersant BYK-103 was added, the packing density was about 80.5%.

• Journal of Magnetics
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• v.11 no.2
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• pp.90-94
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• 2006

A finite-element method is used to analyze loss generation and electromagnetic noise absorption characteristics of a coplanar waveguide transmission line integrated with a magnetic thin film. Parameters used in the analysis are the electrical resistivity of the magnetic layer and the thickness of both magnetic and insulating layers. The results indicate that L-C resonance is the main loss mechanism of the electromagnetic noise absorption.

• Proceedings of the Korean Magnestics Society Conference
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• 2006.11a
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• pp.56-56
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• 2006

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1561-1563
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• 2004

In this paper, we researched the dielectric properties and voltage dependence on slice XLPE sheet from 22[kV] and 154[kV] power cable. We studied effects for impurities and water for semiconductor shield through a dielectric properties experiment to estimate performance of insulating materials in power cable. Capacitance and tan${\delta}$ of 22[kV], 154[kV] were 53/43[pF] and $7.4{\times}10^{-4},\;2.1510^{-4}$. In these results, the trend was increased with the increase of temperature. The tan${\delta}$ of XLPF/ semiconductor layer was increased as compared with that of XLPE. Dielectric properties reliability of tan${\delta}$ was small.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.28 no.5
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• pp.326-331
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• 2015

In this paper, we study the insulating properties of the liquid nitrogen(LN2) including the thermal bubbles. The shape of the thermal bubbles in accordance with the current change was observed in the 77 K and 65 K LN2. According to the temperature of liquid nitrogen, bubbles were generated differently. The round shape of the bubble is occurred in 77 K LN2. But the layer shape of bubble is occurred in 65 K LN2. When the bubbles present, the dielectric strength of liquid nitrogen is low. However, the breakdown patterns were different according to the electrode arrangement. AC breakdown voltage(BDV) was lower than the DC BDV due to the influence of bubbles. Therefore, the design of a high-voltage superconducting equipments should consider the bubbles.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.63.1-63.1
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• 2015

The next generation electronics need to not only be smaller but also be more flexible. To meet such demands, van der Waals (vdW) heterostructures using two dimensional (2D) atomic crystals such as graphene, hexagonal boron nitride (h-BN) and transition metal dichalcogenides (TMDCs) have been attracted intensely. In particular, for high performance of vdW heterostructures device, ultraclean interface between stacked 2D atomic crystals should be guaranteed. In this talk, I will present fabrication and characterization of the vdW field effect transistors toward performance enhancement by employing TMDCs channel, h-BN insulating layer and graphene electrode. Furthermore, it will also be introduced the characterization and surface engineering of graphene for gas molecule sensor.