• Title/Summary/Keyword: Insulating Package

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The Analysis of Heat Transfer through the Multi-layered Wall of the Insulating Package

  • Choi, Seung-Jin
    • KOREAN JOURNAL OF PACKAGING SCIENCE & TECHNOLOGY
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    • v.12 no.1
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    • pp.45-53
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    • 2006
  • Thermal insulation is used in a variety of applications to protect temperature sensitive products from thermal damage. Several factors affect the performance of insulation packages. Among these factors, the thermal resistance of the insulating wall is the most important factor to determine the performance of the insulating package. In many cases, insulating wall consists of multi-layered structure and the heat transfer through this structure is a very complex process. In this study, an one-dimensional mathematical model, which includes all of the heat transfer principles covering conduction, convection and radiation in multi-layered structure, were developed. Based on this model, several heat transfer phenomena occurred in the air space between the layer of the insulating wall were investigated. From the simulation results, it was observed that the heat transfer through the air space between the layer were dominated by conduction and radiation and the low emissivity of the surface of each solid layer of the wall can dramatically increase the thermal resistance of the wall. For practical use, an equation was derived for the calculation of the thermal resistance of a multi-layered wall.

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The Effect of Insulating Material on WLCSP Reliability with Various Solder Ball Layout (솔더볼 배치에 따른 절연층 재료가 WLCSP 신뢰성에 미치는 영향)

  • Kim, Jong-Hoon;Yang, Seung-Taek;Suh, Min-Suk;Chung, Qwan-Ho;Hong, Joon-Ki;Byun, Kwang-Yoo
    • Journal of the Microelectronics and Packaging Society
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    • v.13 no.4
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    • pp.1-7
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    • 2006
  • A major failure mode for wafer level chip size package (WLCSP) is thermo-mechanical fatigue of solder joints. The mechanical strains and stresses generated by the coefficient of thermal expansion (CTE) mismatch between the die and printed circuit board (PCB) are usually the driving force for fatigue crack initiation and propagation to failure. In a WLCSP process peripheral or central bond pads from the die are redistributed into an area away using an insulating polymer layer and a redistribution metal layer, and the insulating polymer layer affects solder joints reliability by absorption of stresses generated by CTE mismatch. In this study, several insulating polymer materials were applied to WLCSP to investigate the effect of insulating material. It was found that the effect of property of insulating material on WLCSP reliability was altered with a solder ball layout of package.

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Breakdown Characteristics and Lifetime Estimation of Rubber Insulating Gloves Using Statistical Models

  • Kim, Doo Hyun;Kang, Dong Kyu
    • International Journal of Safety
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    • v.1 no.1
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    • pp.36-42
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    • 2002
  • This paper is aimed at predicting the life of rubber insulating gloves under normal operating stresses from relatively rapid test performed at higher stresses. Specimens of rubber insulating gloves are subject to multiple stress conditions, i.e. combined electrical and thermal stresses. Two modes of electrical stress, step voltage stress and constant voltage stress are used in specimen aging. There are two types of test for electrical stress in this experiment: the one is Breakdown Voltage (BDV) test under step voltage stress and thermal stress and the other is lifetime test under constant voltage stress and temperature stress. The ac breakdown voltage defined as the break-down point of insulation that leakage current excesses a limit value, l0mA in this experiment, is determined. Because the very high variability of aging data requires the application of statistical model, Weibull distribution is used to represent the failure times as the straight line on Weibull probability paper. Weibull parameters are deter-mined by three statistical methods i.e. maximum likelihood method, graphical method and least squares method, which employ SAS package, Weibull probability paper and FORTRAN, respectively. Two chosen models for predicting the life under simultaneous electrical and thermal stresses are inverse power model and exponential model. And the constants of life equation for multistress aging are calculated using numerical method, such as Gauss Jordan method etc.. The completion of life equation enables to estimate the life at normal stress based on the data collected from accelerated aging test. Also the comparison of the calculated lifetimes between the inverse power model and the exponential model is carried out. And the lifetimes calculated by three statistical methods with lower voltage than test voltage are compared. The results obtained from the suggested experimental method are presented and discussed.

A Study on the Effect of Insulating Sleeve on Solidification Characteristics of A356 Aluminum Alloy (절연슬리브가 A356 알루미늄 합금의 응고과정에 미치는 영향에 대한 연구)

  • Oh, Min-Joo;Yoo, Seung-Mok;Cho, In-Sung;Kim, Young-Hyun
    • Journal of Korea Foundry Society
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    • v.31 no.4
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    • pp.205-211
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    • 2011
  • Al-Si alloys have been steadily used as a potential material for the achievement of an efficient weight reduction in the automobile and aerospace industries due to its excellent castability and high strength-to-weight ratio. In this study, riser effect and mechanical properties were investigated according to the size of the sleeve. In addition, the effects of riser size on mechanical properties of castings were investigated. On the other hand flow and solidification process were simulated with a hybrid FDM/FEM package named ZCast. As a result, results of simulation and experiments were comparable regarding to the yield strength, tensile strength, elongation and hardness of casting. It proves the reliability of the simulation. It is expected that the proper size of riser can improve the recycling rate of metallic materials and reduce the cost of casting.

Magnetic Properties of Ni/BN/Co Trilayer Structure: A First Principles Study

  • Hashmi, Arqum;Hong, Jisang
    • Journal of Magnetics
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    • v.20 no.3
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    • pp.201-206
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    • 2015
  • Using the Vienna ab initio simulation package (VASP) incorporating both semiempirical and nonlocal van der Waals interaction, the structural, adsorption, and magnetic properties of Ni/BN/Co systems were investigated. We proposed that the relative spin direction of Ni and Co magnets can be easily tuned, because the total energy difference between ferromagnetic (FM) and antiferromagnetic (AFM) states is small. Despite this feature, very interestingly, both Ni and Co layers manifest half-metallic state, whereas the spacer BN layer becomes weak metal for one monolayer (ML) thickness and an insulating barrier for two ML thicknesses. The half-metallic behavior of the magnetic layers seems very robust, because it is independent of the magnetic coupling between Ni and Co. This finding indicates that the Ni/BN/Co system can be used as a potential candidate for tunneling magnetoresistance system.

Ideal structure for tunneling magnetoresistance and spin injection into semiconductros: Ni(111)/BN/Co(111)

  • Arqum, Hashmi;Son, Jicheol;Hong, Jisang
    • Proceedings of the Korean Magnestics Society Conference
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    • 2013.12a
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    • pp.32-32
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    • 2013
  • Using the Vienna ab initio simulation package (VASP) incorporating van der Waals interaction, we have explored structural, adsorption, and magnetic properties of Ni(111)/BN/Co(111) systems. We have found that both Ni(111) and Co(111) layers shows half metallic state, while the spacer BN layer becomes weak metal for one monolayer (ML) thickness and an insulating barrier for two ML thickness. The half metallic states in both Ni(111) and Co(111) layers are robust because it is unchanged independently on the magnetic coupling of Ni(111) and Co(111). This finding suggests that the Ni(111)/BN/Co(111) systems can be utilized for perfect tunneling magnetoresistance system. Moreover, it can be applied for potential spin injecting into semiconductor in FM/semiconductor system due to the fact that the half metallic state in FM layers at the interface will be unchanged.

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Thermal Design of High Power Semiconductor Using Insulated Metal Substrate (Insulated Metal Substrate를 사용한 고출력 전력 반도체 방열설계)

  • Bongmin Jeong;Aesun Oh;Sunae Kim;Gawon Lee;Hyuncheol Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.30 no.1
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    • pp.63-70
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    • 2023
  • Today, the importance of power semiconductors continues to increase due to serious environmental pollution and the importance of energy. Particularly, SiC-MOSFET, which is one of the wide bandgap (WBG) devices, has excellent high voltage characteristics and is very important. However, since the electrical properties of SiC-MOSFET are heatsensitive, thermal management through a package is necessary. In this paper, we propose an insulated metal substrate (IMS) method rather than a direct bonded copper (DBC) substrate method used in conventional power semiconductors. IMS is easier to process than DBC and has a high coefficient of thermal expansion (CTE), which is excellent in terms of cost and reliability. Although the thermal conductivity of the dielectric film, which is an insulating layer of IMS, is low, the low thermal conductivity can be sufficiently overcome by allowing a process to be very thin. Electric-thermal co-simulation was carried out in this study to confirm this, and DBC substrate and IMS were manufactured and experimented for verification.