• Journal of Power Electronics
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• v.18 no.2
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• pp.395-406
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• 2018

Marine controlled-source electromagnetic transmitters (MCSETs) are important in marine electromagnetic exploration systems. They play a crucial role in the exploration of solid mineral resources, marine oil, and gas and in marine engineering evaluation. A DC-DC controlled-source circuit is typically used in traditional MCSETs, but using this circuit in MCSETs causes several problems, such as large voltage ringing of the high-frequency diode, heating of the insulated-gate bipolar transistor (IGBT) module, high temperature of the high-frequency transformer, loss of the duty cycle, and low transmission efficiency of the controlled-source circuit. This paper presents a clamping-diode circuit for MCSET (CDC-MCSET). Clamping diodes are added to the controlled-source circuit to reduce the loss of the duty ratio and the voltage peak of the high-frequency diode. The temperature of the high-frequency diode, IGBT module, and transformer is decreased, and the service life of these devices is prolonged. The power transmission efficiency of the controlled-source circuit is also improved. Saber simulation and a 20 KW MCSET are used to verify the correctness and effectiveness of the proposed CDC-MCSET.

• Journal of Hydrogen and New Energy
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• v.26 no.2
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• pp.184-191
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• 2015

As the power electronics system increases the frequency, the power loss and thermal management are paid more attention. This research presents a real time model of dissipation power with junction temperature response for 120kw IGBT inverter which is applied to the thermal management of high power IGBT inverter. Since the computational time is critical for real time simulation, look-up tables of IGBT module characteristic curve are implemented. The power loss from IGBT provides a clue to calculate the temperature of each module of IGBT. In this study, temperature of each layer in IGBT is predicted by lumped capacitance analysis of layers with convective heat transfer. The power loss and temperature of layers in IGBT is then communicated due to mutual dependence. In the dynamic model, PWM pulses are employed to calculation real time IGBT and diode power loss. Under Matlab/Simulink$^{(R)}$ environment, the dynamic model is validated with experiment. Results showed that the dynamic response of power loss is closely coupled with effective thermal management. The convective heat transfer is enough to achieve proper thermal management under guideline temperature.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.7
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• pp.546-550
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• 2001

A new Lateral Trench Insulated Gate Bipolar Transistor(LTIGBT) with p$^{+}$ diverter was proposed to improve the characteristics of the conventional LTIGBT. The forward blocking voltage of the proposed LTIGBT with p$^{+}$ diverter was about 140V. That of the conventional LTIGBT of the same size was 105V. Because the p$^{+}$ diverter region of the proposed device was enclosed trench oxide layer, he electric field moved toward trench-oxide layer, and punch through breakdown of LTIGBT with p$^{+}$ diverter was occurred, lately. Therefore, the p$^{+}$ diverter of the proposed LTIGBT didn't relate to breakdown voltage in a different way the conventional LTIGBT. The Latch-up current densities of the conventional LTIGBT and proposed LTIGBT were 540A/$\textrm{cm}^2$, and 1453A/$\textrm{cm}^2$, respectively. The enhanced latch-up capability of the proposed LTIGBT was obtained through holes in the current directly reaching the cathode via the p$^{+}$ divert region and p$^{+}$ cathode layer beneath n$^{+}$ cathode layer./ cathode layer.

• Proceedings of the KIEE Conference
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• 2001.05a
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• pp.194-196
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• 2001

Light dimming is based on adjusting the voltage which gets to the lamp. Light dimming has been possible for many decades by using adjustable power resistors and adjustable transformers. The power electronics have proceeded quietly since 1960. Between 1960-1970 thyristors and triacs came to market. Using those components it was quite easy to make small and inexpensive light dimmers which have goof efficiency. This type of electronic light dimmers became available after 1970 and are nowadays used in very many locations like homes, restaurants, conference rooms and in stage lighting. But the problem of thyristor dimmer have been that it has poor efficiency and voltage drop. Recently IGBT(Insulated Gate Bipolar Transistor) control is a new way to do light dimming for improving this problems. IGBT dimmer has many other advantages over traditional thyristor dimmer there are no huge current spikes and EMI caused by turn on Using IGBT it is possible to make the turn-off rate relatively slot to achieve quite operations in terms of EMI and acoustical or incandescent lamp filament noise. For the development of IGBT dimmer. This paper shows the effects of IGBT dimmer compared with thyristor dimmer through a simulation using EMTDC.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.1
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• pp.73-80
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• 2016

The preliminary test for the dual mode plasma torch system was carried out to explore the operation properties in advance. The dual mode plasma torch system that is able to operate in transferred, non-transferred, or dual mode is very adequate for melting the mixed wastes including nonconductive materials such as concrete, asbestos, etc. since it exploits both the high efficiency of heat transfer to the melt in transferred mode and stable operation in non-transferred mode. Also, system operation including restarting is reliable and very easy. A stationary melter with a refractory structure was designed and manufactured considering the melting behavior of slags to minimize the refractory erosion. The power supply for the dual mode plasma torch system built with high power insulated gate bipolar transistor (IGBT) modules has functions for both current control and voltage control and is sufficient to suppress the harmonics during the operation of the plasma torch. The power supply provides two different voltages for transferred operation and non-transferred. It is confirmed that the operation voltage in transferred is always higher than non-transferred. The dual mode plasma torch system was successfully developed and is under operation for a melting experiment to optimize operation data.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.634-637
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• 1997

This paper is on the research and development of new SIV(Static Inverter) using IGBT(Insulated Gate Bipolar Transistor) semiconductor for a wide range of electric railway applications. For the simplification and higher controllability, the direct PWM control method with 3level inverter topology was adopted. In the new SIV system, the cost as well as bulk and weight was appreciably reduced about 40% lower than those of conventional SIV, the electrical efficiency was increased above 95% and the audible noise level was less than 65dB. In addition, the THD(Total Harmonic Distortion) factor was below 5% and the voltage fluctuation on a transient state was below 10%.

• Proceedings of the KIEE Conference
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• 2015.07a
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• pp.1605-1606
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• 2015

전기철도차량은 매 순간마다 이동하는 대용량 단상부하로, 전력계통 측면에서 부하의 특성이나, 계통구성의 형태 및 제반현상이 일반 3상 전력계통과 상이한 특성을 지닌다. 이와 같이 3상 전력계통으로 부터 단상 교류로 변환하여 전기차를 운행하는 경우에는 3상 전원측 PCC(Point of Common Coupling)에 불평형을 일으켜, 역상전류를 발생시킨다. 현재는 이를 최소화하기 위해서 종래부터 사용 되어온 스코트 결선 변압기를 사용하고 있다. 하지만 특성상 두 개의 단상 시스템에 걸리는 부하량 및 역율이 동일하지 않을 경우 여전히 3상 전압불평형이 발생된다. 이에 대한 근본적인 대책으로는 급전시스템 재구성 또는 전력 설비 증설 및 보상장치의 적용을 들 수 있으나, 최근에는 전력전자 기술의 발달로 IGBT(Insulated Gate Bipolar Transistor) 소자를 이용한 BTB(Back To Back) 방식의 컨버터를 활용한 사례가 연구되고 있다. 본 논문에서는 전력계통과 전기철도의 연계 목적으로 3상-단상 BTB 모듈형 멀티레벨 컨버터 (Modular Multi-level Conveter, MMC)를 이용한 전기철도 급전 시스템의 기본구조를 제안하고, Mathworks사의 MATLAB Simulink tool를 이용하여 시뮬레이션을 통해 MMC시스템을 검토하고자 한다.

• KEPCO Journal on Electric Power and Energy
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• v.6 no.2
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• pp.119-122
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• 2020

With recent ESS (Energy Storage System) fire accident, the fault protection performance is becoming more important. However, there has never been any experiments with the protection performance on the faults in the ESS system level. In this study, the effect of AC ground fault and IGBT (Insulated Gate Bipolar mode Transistor) short-circuit failure on MW class ESS was performed experimentally for the first time in the world. First of all, the effect of the AC single line ground fault on battery was analyzed. Moreover, the transient voltage was investigated as a function of the battery capacity and the power level. Finally, the breaking capability and insulation performance of ESS were examined under PCS short-circuit fault condition. Through the tests, it was found that ESS protection system safely blocked the faulty current regardless of the faults, whereas the electronic parts such as IGBT and MC (Magnetic Contactor) were broken by the fault current. Also, the electrical breakdown in ESS resulted from the transient voltage during the protection process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.4
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• Journal of Electrical Engineering and Technology
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• v.7 no.6
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• pp.932-939
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• 2012

This paper presents an equivalent circuit model of a LIPB (Li-Ion Polymer battery) for Hybrid Electric Vehicles (HEVs). The proposed equivalent circuit can be used to predict the charging/discharging characteristics in time domain as well as the impedance characteristic analysis in frequency domain. Based on these features, a one-cell model is established as a function of Depth of Discharge (DoD), and a 48-cell model for a battery pack was also established. It was confirmed by experiment that the proposed model predict the discharging and impedance (AC) characteristics quite accurately at different constant current levels. To check the usefulness of the proposed circuit, the model was used to simulate a motor driving circuit with an Insulated Gate Bipolar Transistor (IGBT) inverter and Brushless DC (BLDC) motor, and it is confirmed that the model can calculate the battery voltage fluctuation in time domain at different DoDs.