• Title/Summary/Keyword: Instability of solid-liquid interface

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Effect of VC Addition on the Microstructural Evolution of Fe-TiC Cermet (VC의 첨가에 따른 Fe-TiC계의 미세조직변화)

  • 채기웅
    • Journal of the Korean Ceramic Society
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    • v.36 no.4
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    • pp.366-371
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    • 1999
  • The effect of VC addition on the microstructural evolution of Fe-TiC cermet has been investigated. The microstructures of the Fe-TiC varied with the amount of VC addition. The addition of 1wt% VC enhanced the instability of liquid-solid interface ; the dissolving interface showed round shape instead of facetted one which was ascribed to the increase of lattice mismatch between TiC and solid-solution carbide. in the speci-men with 10wt% VC the new set of solid-solution carbide grains of uniform and small size was formed in-side coarse TiC particles by diffusion induced recrystallizatin (DIR). With increasing the heat-treatment time fine recrystallized grains were dispersed homogeneously in the matrix and resulted in the increase in fracture strength.

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Perturbation Analysis of a Meandering Rivulet (섭동법을 이용한 만곡 리뷸릿에 관한 이론적 연구)

  • 김진호;김호영;강병하;이재헌
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.13 no.12
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    • pp.1196-1204
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    • 2001
  • The rivulet is a narrow stream of liquid flowing down a solid surface. When the rivulet\`s flow rate exceeds a certain limit, it tends to meander exhibiting the instability of its interface. This analysis performs a perturbation analysis of this meandering rivulet assuming an inviscid flow possessing contact angle hysteresis at the contact line. The analysis reveals that the contact angle hysteresis as well as the velocity difference across the inter-face, strongly induces the instability of the liquid interface. Moreover, when the rivulet veto-city is low, it is predicted that the axisymmetric disturbance amplifies more rapidly than the anti-axisymmetric disturbance, which explains the emergence of the droplet flow at the low velocity regime.

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EVALUATION 01 OIL DISPERSION AGENT BY ASSESSMENT 01 COLOR STRENGTH 01 ORGANIC PIGMENT

  • H., Young-Chan;R., Seo-Joon;L., Dong-Wook;H., Soon-Taek
    • Journal of the Society of Cosmetic Scientists of Korea
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    • v.24 no.3
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    • pp.73-80
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    • 1998
  • This Study was performed to get the suitable oil dispersion agent by assessment of color strength of organic pigment in non-aqueous systems. Organic pigment is used as a color expression material with other body pigments in the make-up products. But occasionally aggregation or agglomeration occurs for the lack of affinity with medium, This function is the cause of disturbing homogeneous dispersion, and then bring about an instability of products. Our study, research of dispersion mechanism between the pigment and oil phase, has been executed to solve this problem, and find a oil dispersion agent having optimum dispersion condition. Generally dispersion is related to between the solid-liquid mutual properties and electrical phenomena associated with solid-liquid interface. This factor is determined to input energy, milling time, optical properties, particle size, rheological properties, etc. Ideal dispersion state is told that coloring primary solid particle is homogeneously dispersed in medium. Good dispersed colorants are strongly and clearly appeared. We are already known that the particle size of organic pigment, chemical properties and viscosity of medium, refractive index. Consequently We determine the affinity of medium and organic pigment by measuring of color strength in the same mechanical condition. UV-VISIBLE RECORDING SPECTRO PHOTOMETER is used for measuring apparatus. We can decided the dispersion level of oil dispersion agent by measuring absorbance of color strength in the visible range that diluted medium for colloid colorant particles.

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A Large Slipping Finite Element Model for Geosynthetics Interface Modeling

  • Yi, Chang-Tok
    • Geotechnical Engineering
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    • v.12 no.3
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    • pp.35-48
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    • 1996
  • Reinforced soil structures may experience large local movements between soil and reinforcement. The failure modes of a reinforced structure depend on several factors which are governed by deformation and slipping of the reinforcement. In some cases, pulling out of the reinforcement may occur instead of rupturing, The growing use of geosynthetic liner system for storage of solid and liquid wastes has led to a number of slope instability problems where the synthetic liner may undergo a large amount of stretching and slipping as a result of the loading. The conventional finite element model for the soil-reinforcement interface uses a zero thickness joint element with normal and shear stiffnesses and can only accommodate a small amount of deformation. When a large slippage occurs, the model provides an i ncorrect mechanism for deformation. This paper presents a new interface finite element model which is able to simulate a large amount of slippage between soil and reinforcement. The formulation of the model is presented and the capability of the model is demonstrated using illustrative examples.

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The Effect of Transverse Magnetic field on Macrosegregation in vertical Bridgman Crystal Growth of Te doped InSb

  • Lee, Geun-Hee;Lee, Zin-Hyoung
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1996.06a
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    • pp.522-522
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    • 1996
  • An investigation of the effects of transverse magnetic field and Peltier effect on melt convection and macrosegregation in vertical Bridgman crystal grosth of Te doped InSb was been carried out by means of microstructure observation, Hall measurement, electrical resistivity measurement and X-ray analysis. Before the experiments, Interface stability, convective instability and suppression of convection by magnetic field were calculated theoretically. After doping 1018, 1019 cm-3 Te in InSb, the temperature of Bridgman furnace was set up at $650^{\circ}C$. The samples were grown in I.D. 11mm, 100mm high quartz tube. The velocity of growth was about 2${\mu}{\textrm}{m}$/sec. In order to obtain the suppression of convection by magnetic field in the middle of growth, 2-4KG magnetic field was set on the melt. For searching of the shape of solid-liquid interface and the actual velocity of crystal growth, let 2A current flow from solid to liquid for 1second every 50seconds repeatedly (Peltier effect). The grown InSb was polycrystal, and each grain was very sharp. There was no much difference between the sample with and without magnetic field at a point of view of microstructure. For the sample with Peltier effect, the Peltier marks(striation) were observed regularly as expected. Through these marks, it was found that the solid-liquid interface was flat and the actual growth velocity was about 1-2${\mu}{\textrm}{m}$/sec. On the ground of theoretical calculation, there is thermosolutal convection in the Te doped InSb melt without magnetic field in this growth condition. and if there is more than 1KG magnetic field, the convection is suppressed. Through this experiments, the effective distribution coefficients, koff, were 0.35 in the case of no magnetic field, and 0.45 when the magnetic field is 2KG, 0.7 at 4KG. It was found that the more magnetic field was applied, the more convection was suppressed. But there was some difference between the theoretical calculation and the experiment, the cause of the difference was thought due to the use of some approximated values in theoretical calculation. In addition to these results, the sample with Peltier effect showed unexpected result about the Te distribution in InSb. It looked like no convection and no macrosegregation. It was thought that the unexpected behavior was due to Peltier mark. that is, when the strong current flew the growing sample, the mark was formed by catching Te. As a result of the phenomena, the more Te containing thin layer was made. The layer ruled the Hall measurement. The values of resistivity and mobility of these samples were just a little than those of other reference. It was thought that the reason of this result was that these samples were due to polycrystal, that is, grain boundaries had an influence on this result.

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Nanoscale Characterization of a Heterostructure Interface Properties for High-Energy All-Solid-State Electrolytes (고에너지 전고체 전해질을 위한 나노스케일 이종구조 계면 특성)

  • Sung Won Hwang
    • Journal of the Semiconductor & Display Technology
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    • v.22 no.1
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    • pp.28-32
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    • 2023
  • Recently, the use of stable lithium nanostructures as substrates and electrodes for secondary batteries can be a fundamental alternative to the development of next-generation system semiconductor devices. However, lithium structures pose safety concerns by severely limiting battery life due to the growth of Li dendrites during rapid charge/discharge cycles. Also, enabling long cyclability of high-voltage oxide cathodes is a persistent challenge for all-solid-state batteries, largely because of their poor interfacial stabilities against oxide solid electrolytes. For the development of next-generation system semiconductor devices, solid electrolyte nanostructures, which are used in high-density micro-energy storage devices and avoid the instability of liquid electrolytes, can be promising alternatives for next-generation batteries. Nevertheless, poor lithium ion conductivity and structural defects at room temperature have been pointed out as limitations. In this study, a low-dimensional Graphene Oxide (GO) structure was applied to demonstrate stable operation characteristics based on Li+ ion conductivity and excellent electrochemical performance. The low-dimensional structure of GO-based solid electrolytes can provide an important strategy for stable scalable solid-state power system semiconductor applications at room temperature. The device using uncoated bare NCA delivers a low capacity of 89 mA h g-1, while the cell using GO-coated NCA delivers a high capacity of 158 mA h g−1 and a low polarization. A full Li GO-based device was fabricated to demonstrate the practicality of the modified Li structure using the Li-GO heterointerface. This study promises that the lowdimensional structure of Li-GO can be an effective approach for the stabilization of solid-state power system semiconductor architectures.

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