• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.1139-1141
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• 2006

For the bottom-contact pentacene organic thin-film transistors (OTFTs), the insertion of a thin PMMA layer $(20{\AA})$ between the pentacene and the electrode improves the electrical performances, such as carrier mobility and on-current magnitude, about 4 times larger than those of the devices without the PMMA. The performance enhancement is presumably due to the decreased contact resistance between metal and pentacene by inserting the thin PMMA layer.

• Transactions on Electrical and Electronic Materials
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• 제6권3호
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• pp.101-105
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• 2005

Electroluminescence(EL) and current-voltage(I-V) characteristics of hybrid EL devices containing Pr and Mn co-doped ZnS nanoparticles were investigated in this study. For the insertion of a hole transport layer of poly (N-vinyl carbazole)(PVK), the current level became lower due to the accumulation of electrons at the interface between PVK and nanoparticles. When both PVK and buffer layer $BaF_2$ were simultaneously introduced, the enhanced EL efficiency and improved I-V characteristics were obtained. This results from the additional increase of hole injection owing to the internal field induced by the significant accumulation of electrons at the interface. The presence of buffer layer $BaF_2$ together with PVK makes it possible the charge accumulation enough to induce the sufficient internal field for further hole injection.

• Journal of the Optical Society of Korea
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• 제20권1호
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• pp.125-129
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• 2016

In this study, we have investigated a high-temperature AlN nucleation layer and AlGaN epilayers on c-plane sapphire substrate by low-pressure metal-organic chemical vapor deposition (LP-MOCVD). High resolution X-ray diffraction (HRXRD), atomic force microscopy (AFM), scanning electron microscope (SEM) and Raman scattering measurements have been exploited to study the crystal quality, surface morphology, and residual strain of the HT-AlN nucleation layer. These analyses reveal that the insertion of an LT-AlN nucleation layer can improve the crystal quality, smooth the surface morphology of the HT-AlN nucleation layer and further reduce the threading dislocation density of AlGaN epifilms. The mechanism of inserting an LT-AlN nucleation layer to enhance the optical properties of HT-AlN nucleation layer and AlGaN epifilm are discussed from the viewpoint of driving force of reaction in this paper.

• Applied Science and Convergence Technology
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• 제26권1호
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• pp.16-19
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• 2017

A thin metal layer of molybdenum is placed between the conventional barrier layer and the stainless steel substrate for investigating the diffusion property of iron (Fe) atoms. In this study, the protection probability was confirmed by measuring the concentration of out-diffused Fe using a SIMS depth profile. The Fe concentration of chromium (Cr) barrier layer with 10 nm molybdenum (Mo) layer is 5 times lower than that of Cr barrier without the thin Mo layer. The insertion of a thin Mo metal layer between the barrier layer and the stainless steel substrate effectively protects the out-diffusion of Fe atoms.

• 한국세라믹학회지
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• 제46권6호
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• pp.673-678
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• 2009

The effect of MgO buffer layer on the structural properties of sputter-grown ZnO thin film was investigated. Sapphire (0001) and Si (100) substrate were used for the growth and MgO buffer layer was inserted between ZnO thin film and the substrate. X-ray diffraction pattern indicated that enhanced crystallinity in the ZnO thin film grown was achieved by inserting very thin MgO buffer layer, regardless of the substrate type. The strain in the ZnO thin film could also be controlled by the insertion of the MgO buffer layer, and tendency of the strain was strongly dependent on the substrate type.

• Archives of Plastic Surgery
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• 제36권2호
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• pp.183-187
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• 2009

Purpose: Because of the volume of elective sterilizations performed in the world during the past decade, the vasectomy was a popular method for male sterilization in Korea and this, in turn, had been followed by an increase in the number of patient requiring vasectomy reversal with the high rate of subsequent divorce and remarriage. Recently, many authors have reported high success rates of vasovasostomy using microsurgical techniques and we performed modified two layer vasovasostomy with intravasal silicone tube to increase postoperative patency and pregnacy rate. Methods: Microscopic vasovasostomy was performed in 9 patients and their average age was $35.78{\pm}1.36years$(from 28 years to 44 years) from June 2006 to June 2008 at our department using modified two layer vasovasostomy with silicone tube insertion. Standard Guibor silicone tube, consisting of two 17.7 cm, 0.064 cm diameter, malleable, stainless steel probes connected by 29 cm of silicone tubing wedged onto disposable probes, were used in all cases. Results: Success rates were 88.8 % for patency and pregnancy 44.4 % for pregnancy in modified two layer vasovasostomy with silicone tube insertion. The patency rates were higher in cases of long postoperative day and in cases of short duration of vasectomy and vasovasostomy. Conclusion: We used a modified method to correspond the patency and pregnancy rate in microscopical modified two layer vasovasostomy using the intravasal silicone tube permanently. This method brings normal patency in microsurgical vasovasostomy because the silicone tube prevent obstruction of anastomosed site of the vas permanently.

• 마이크로전자및패키징학회지
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• 제12권2호
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• pp.105-109
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• 2005

본 논문은 LTCC 공정에 기반을 둔 GSM/DCS dual band 의 소형화된 antenna switch module을 공정변수 따른 특성의 왜곡을 안정화시키는 연구를 수행하였다. 특히 tape thickness의 변화에 따라 패턴간의 기생 커플링이 주된 변수로 작용한다. 두께 50um인 tape으로 제작된 시편의 사이즈는 $4.5{\times}3.2{\times}0.8 mm^3$이고 insertion loss는 Rx mode와 Tx mode 각각 ldB. 1.2dB 이하이다. 공정상에서 tape thickness의 변화에 따라 개발된 모듈의 특성 안정성을 검증하기 위해 각 블록-다이플렉서,필터, 바이어스 회로-을 probing method을 이용, 측정하였고, 각 블록간의 상호관계는 VSWR을 계산하여 비교하였다. 또한 회로적 관점에서 특성 개선을 위해 바이어스 회로부분의 집중소자형과 분포소자형을 구현하여 서로 비교 분석하였다. 이를 통해 각 블록의 측정과 계산된 VSWR의 데이터는 공정변수에 의해 변화된 전체 module의 특성과 안정성 거동을 파악하는데 좋은 정보를 준다. Tape thickness변화에도 불구하고 다이플렉스의 matching값은 연결되는 바이어스 회로와 LPF의 matching값과 상대 matching이 되면서, 낮은 VSWR을 유지하여 전체 insertion loss가 안정화되는 것을 확인하였다. 더불어 분포소자형 바이어스 회로보다는 집중소자형이 다른 회로블럭과의 관계에서 더 좋은 매칭을 이루어 loss개선에 일조하였다. Tape thickness가 6 um이상의 변화를 가져와도 집중소자형 바이어스 회로는 낮은 손실을 유지하여 더 넓은 안정 범위를 가져오기 때문에 양산에 적합한 구조가 될 수 있다 그리고, probing method에 의한 안정성 특성 추출은 세라믹에 임베디드된 수동회로들의 개발에 충분히 적용될 수 있다.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2001년도 하계종합학술대회 논문집(2)
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• pp.17-20
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• 2001

In this paper, film bulk acoustic resonator(FBAR) with an air-gap is fabricated by removing ZnO sacrificial layer and its characteristics as a various dimension of ZnO sacrificial and piezoelectric layer is evaluated. The center frequency of the FBAR device with the ZnO film is about 1.9 GHz. Because of mass-loading effect, a dimension of sacrificial layer and piezoelectrc layer affect frequency response such as center frequency, insertion loss, band separation, attenuation and so on.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.81-84
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• 2003

Conductive polyaniline(PANI)-camphosulfonic acid (CSA) film applied as a hole injection layer in ITO/PANI/P3HT/LiF/Al device. In the AFM images, electrochemically polymerized PANI-CSA films have the small particles and smooth sufficient for application as hole injection layer. By insertion of PANI-CSA buffer layer, the turn on voltage of ITO/PANI/P3HT/LiF/Al device lowed by 3V, whereas that of ITO/P3HT/LiF/Al device shows 5V.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 1998년도 춘계연구발표회 논문개요집
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• pp.50-51
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• 1998