• Title/Summary/Keyword: Ink jet

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Inkjet Printable Transparent Conducting Oxide Electrodes

  • Kim, Han-Gi
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2011.05a
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    • pp.59.2-59.2
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    • 2011
  • We have demonstrated ink-jet printed indium tin oxide (ITO) and indium tin zinc oxide (IZTO) electrodes for cost-efficient organic solar cells (OSCs). By ink-jetting of crystalline ITO nano-particles and performing a rapid thermal anneal at $450^{\circ}C$, we were able to obtain directly patterned-ITO electrodes with an average transmittance of 84.14% and a sheet resistance of 202.7 Ohm/square without using a conventional photolithography process. The OSCs fabricated on the directly patterned ITO electrodes by ink-jet printing showed an open circuit voltage of 0.57 V, short circuit current of 8.47 mA/cm2, fill factor of 44%, and power conversion efficiency of 2.13%. This indicates that the ITO directly-patterned by ink-jet printing is a viable alternative to sputter-grown ITO electrodes for cost-efficient printing of OSCs due to the absence of a photolithography process for patterning and more efficient ITO material usage.

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4" E-ink Active-matrix Displays based on Ink-jet Printed Organic Thin Film Transistors

  • Koo, Bon-Won;Kim, Do-Hwan;Moon, Hyun-Sik;Kim, Jung-Woo;Jung, Eun-Jeong;Kim, Joo-Young;Jin, Yong-Wan;Lee, Sang-Yun;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1631-1633
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    • 2008
  • We demonstrate 4-in QVGA active-matrix electrophoretic display based on ink-jet printed organic transistors on glass substrates. Our TFT array had a bottom-gate, bottom-contact device architecture. The organic semiconductor and gate dielectric were solution processed. The field-effect mobility of the printed devices, calculated in the saturation region, was $0.1{\sim}0.3cm^2/Vs$ at Vg=-20 V.

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Fabrication of organic thin film transistor using ink-jet printing technology

  • Kim, Dong-Jo;Jeong, Sun-Ho;Park, Bong-Kyun;Lee, Sul;Moon, Joo-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1126-1129
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    • 2006
  • Here we developed a conductive ink which contains silver nanoparticles from which the electrodes for organic thin film transistor were directly patterned by ink-jet printing. To fabricate a coplanar type OTFT, solution processable semiconducting oligomer, ${\alpha},{\omega}-dihexylquaterthiophene$ (DH4T) was drop-cast onto between the ink-jet printed silver electrodes and I-V characteristics were measured.

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Ink-Jet Printing Technology for Color Filter

  • Jian, Zih-Jie;Liou, Wei-Jen;Lin, Hong-Ming;Lo, Yu-Cheng;Liu, Pei-Yu;Wang, Jiun-Ming;Li, Huai-An
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.463-466
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    • 2007
  • It is a revolutionary technology of making color filters by ink-jet printing. The difficult reason of this method is that it is a merger technology of many fields. There must be perfect orientation systems, designed capacity and production equipment of automatically controlled printing head. Moreover, accurate ink with modification is also needed.

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Progress in Manufacture of Flat Panel Displays Using Piezoelectric Drop-On-Demand Ink Jet

  • Creagh, L. T.;Mcdonald, M. M.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.157-162
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    • 2003
  • Piezoelectric ink jet offers a promising combination of productivity, reliability and uniformity that are appropriate for jetting organic electronic materials. Spectra is manufacturing a printhead specifically for display manufacturing. This printhead contains a robust material set and is intended to allow calibration of individual nozzles to meet uniformity requirements of+/-2% for display manufacture.

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Fabrication of Conductive Polymer Resistors Using Ink-jet Printing Technology (잉크젯 프린팅 기술을 이용한 전도성 폴리머 저항의 제작)

  • Lee, Sang-Ho;Kim, Myong-Ki;Shin, Kwon-Yong;Kang, Kyung-Tae;Park, Moon-Soo;Hwang, Jun-Young;Kang, Heui-Seok
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.98-99
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    • 2007
  • This study has successfully demonstrated the direct fabrication of polymer resistors using ink-jet printing technology as an alternative patterning to traditional photolithography. The polymer resistors were fabricated just by two layer processes using a ink-jet printer (DMP-2800, Fujifilm Dimatix). First, resistive materials was patterned by a ink-jet printing with the desired width and length. Next, resistor fabrication was completed by printing metal contact pads on the both sides of the polymer resistor. We used poly (3,4-ethylene dioxythiophene) poly(styrenesulfonate)(PEDOT:PSS) for the resistor material and a nano-sized silver colloid for the metal contact pads. We characterized the electrical properties of PEDOT:PSS by measuring sheet resistance and specific resistance on a glass substrate. From analysis of the measured resistances, the electrical resistances of the polymer resistors linearly increased as a function of printed width and length of resistors. The accuracy of the fabricated polymer resistor showed about $0.6{\sim}2.5%$ error for the same dimensions.

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Fabrication of Thick Film Capacitors with Printing Technology (인쇄기법을 이용한 후막 캐패시터 제작)

  • Lee, Hye-Mi;Shin, Kwon-Yong;Kang, Hyung-Tae;Kang, Heui-Seok;Hwang, Jun-Young;Park, Moon-Soo;Lee, Sang-Ho
    • Proceedings of the KIEE Conference
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    • 2007.11a
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    • pp.100-101
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    • 2007
  • Polymer thick film capacitors were successfully fabricated by using ink-jet printing and screen printing technology. First, a bottom electrode was patterned by ink-jet printing of a nano-sized silver ink. Next, a dielectric layer was formed by the screen printing, then a top electrode was pattern by ink-jet printing of a nano-sized silver ink. The printed area of the dielectric layers were changed into $2{\times}2m^2$and $4{\times}2m^2$, and also the area of the electrodes were patterned with $1{\times}1mm^2$ and $1{\times}3mm^2$. The thickness of the printed dielectric layer was ranged from 1.1 to $1.4{\mu}m$. The analysis of capacitances verified that the capacitances was proportional to the area of the printed electrode. The capacitances of the fabricated capacitors resulted in one third of the calculated capacitances.

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