• 제목/요약/키워드: Injection Locked

검색결과 70건 처리시간 0.024초

고출력 다이오드 레이저의 주입-잠금 과정 연구 (Characteristics of Injection-Locked High Power Diode Laser)

  • 문한섭;김중복;이호성;양성훈;김점술
    • 한국광학회지
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    • 제6권3호
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    • pp.222-227
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    • 1995
  • Littman방식의 grating feedback 다이오드 레이저를 주레이저로 사용하여, 100mW 출력의 단일 종모드로 발진하는 고출력 다이오드 레이저를 주입-잠금 하였다. 불완전 주입-잠금 상태에서 종레이저는 두 주파수가 동시에 발진하는 것을 관찰할 수 있었고 두 주파수 성분의 출력비와 주파수이동이 주입광의 세기의 제곱에 비례한다는 것을 알 수 있었다. 완전 주입-잠금 상태에서 (주입된 광의 세기)/(종레이저광의 세기)가 양 $10^{-3}$ 일 때 주입-잠금 대역폭은 약 1.4GHz로 측정되었다. 주입-잠금 대역폭은 주입광세기의 제곱근에 비례하여 증가하는 것을 보여주는데, 이것은 이론과 일치하는 결과이다. 주입-잠금 상태의 선폭은 자유 동작 상태의 선폭 보다 약 5배 좁아져 2.5MHz 이하였다.

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A 90-nm CMOS 144 GHz Injection Locked Frequency Divider with Inductive Feedback

  • Seo, Hyo-Gi;Seo, Seung-Woo;Yun, Jong-Won;Rieh, Jae-Sung
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제11권3호
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    • pp.190-197
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    • 2011
  • This paper presents a 144 GHz divide-by-2 injection locked frequency divider (ILFD) with inductive feedback developed in a commercial 90-nm Si RFCMOS technology. It was demonstrated that division-by-2 operation is achieved with input power down to -12 dBm, with measured locking range of 0.96 GHz (144.18 - 145.14 GHz) at input power of -3 dBm. To the authors' best knowledge, this is the highest operation frequency for ILFD based on a 90-nm CMOS technology. From supply voltage of 1.8 V, the circuit draws 5.7 mA including both core and buffer. The fabricated chip occupies 0.54 mm ${\times}$ 0.69 mm including the DC and RF pads.

Comparativy Characteristics between Microstrip-Line Resonator(HR) and Dielectric Resonator(DR) for Injection-Locked Oscillators (ILOs)

  • Kim, Nam-Young;Kim, Jong-Heon;Hong, Ui-Seok
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 춘계학술대회 논문집
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    • pp.239-244
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    • 1997
  • A hair-pin shaped microstrip-line resonator and a dielectric resonator for injection-locked oscillators have been designed and fabricated for the comparative studying of their characteristics. In general, a commonly used dielectric resonator shows lower phase noise value than hair-pin resonator in the free-running mode. In the injection-locked mode, however, a hair-pin resonator is superior to the dielectric resonator; the wider tuning range, the 22% improved locking bandwidth, the lower noise effect, the short term stability, and the higher power level. The planar structure of a hair-pin shaped microstrip-line resonator will be easily applied to monolithic microwave integrated circuits.

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주입 동기 방식을 이용한 5GHz 대역 자기발진 주파수 혼합기의 설계 및 제작 (Design and Fabrication of Self-Oscillating Mixer Using Subharmonic Injection Locked Oscillator for 5GHz)

  • 류재종;이주갑;류원열;윤영섭;최현철
    • 대한전자공학회:학술대회논문집
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    • 대한전자공학회 2003년도 통신소사이어티 추계학술대회논문집
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    • pp.86-89
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    • 2003
  • In this paper, Self-Oscillating Mixer is designed by oscillator that was based on a general nonlinear input-output model for the subharmonic injection locked oscillator is analysed. We have designed and fabricated the Self-Oscillating Mixer for 5GHz by proposed subharmonic injection locked oscillator based frequency synthesizer structure that have characteristic of good frequency sensitivity, good phase noise. The design strategy leading to an optimized SILO with regards to its locking range is described and a test SOM circuit is demonstrated a 4dB conversion gain at 280MHz IF frequency from the carrier.

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Comparative Performances between Hair-pin Shaped Microstrip-line Resonator and Dielectric Resonator for Injection Locked Oscillators at 11GHz

  • Lee, Du-Han;Kim, Kye-Hun;Kim, Nam-Youn;Kim, Jong-Heon;Hong, Ui-Seok
    • Journal of Electrical Engineering and information Science
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    • 제2권6호
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    • pp.171-176
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    • 1997
  • A hair-pin shaped microstrip-line resonator and dielectric resonator for injection-locked oscillators have been designed and fabricated for the comparative studying of their performances. In general, a commonly used dielectric resonator shows lower phase noise value than hair-pin resonator in the free-running mode. In the injection-locked mode, however, a hair-pin resonator is superior to the dielectric resonator, the wider tuning range, the 22% improved locking bandwidth, the lower noise effect, the short term stability, and the higher power level. The planar structure of a hair-pin shaped microstrip-line resonator will be easily applied to monolithic microwave integrated circuits.

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부고조파를 이용한 X-band 주입 동기 발진기 설계 및 제작 (Design of Subharmonic Injection Locked Oscillator)

  • 전영상;이문규;남상욱
    • 한국전자파학회논문지
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    • 제10권5호
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    • pp.653-662
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    • 1999
  • 본 논문에서는 부고조파를 이용한 주입 동기 발진기를 설계, 제작하였다. 발진기는 Two Signal Method ( (TSM)의 방법을 사용하여 직렬 궤환회로로 설계하였다. 발진기의 발진주파수 9.4 GHz에서 출력전력 6dBm으 로 free-running하고 었고, 입력선호가 들어가연 주파수가 체배되어 locking되었다. 이때 원하는 출력 파형의 크 기는 다른 부고조파 신호에 비해 최소 40dB 이상이며, 2차 부고조파를 이용한 경우 locking range는 최대 220 MHz 정도이고,4차 부고조파를 이용한 경우 10 MHz이었다 이때의 위상잡음은 각각 100 KHz offset에서 -111dBe/Hz, - 104 dBelHz 정도의 특성을 나타내었다.

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Amplitude Modulation Response and Linearity Improvement of Directly Modulated Lasers Using Ultra-Strong Injection-Locked Gain-Lever Distributed Bragg Reflector Lasers

  • Sung, Hyuk-Kee;Wu, Ming C
    • Journal of the Optical Society of Korea
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    • 제12권4호
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    • pp.303-308
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    • 2008
  • Directly modulated fiber-optic links generally suffer higher link loss and larger signal distortion than externally modulated links. These result from the electron-photon conversion loss and laser modulation dynamics. As a method to overcome the drawbacks, we have experimentally demonstrated the RF performance of directly modulated, ultra-strong injection-locked gain-lever distributed Bragg reflector (DBR) lasers. The free-running DBR lasers exhibit an improved amplitude modulation efficiency of 12.4 dB under gain-lever modulation at the expense of linearity. By combining gain-lever modulation with ultra-strong optical injection locking, we can gain the benefits of both improved modulation efficiency from the gain-lever effect, plus improved linearity from injection locking. Using an injection ratio of R=11 dB, a 23.4-dB improvement in amplitude response and an 18-dB improvement in spurious-free dynamic range have been achieved.

반도체 레이저의 광 주입을 이용한 혼동 통신망의 암호화 기법 분석 (Analyses of Encryption Method for Chaos Communication Using Optical Injection Locked Semiconductor Lasers)

  • 김정태
    • 한국정보통신학회논문지
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    • 제9권4호
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    • pp.811-815
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    • 2005
  • We theoretically studied synchronization of chaotic oscillation in semiconductor lasers with chaotic light injection feed-back induced chaotic light generated from a master semiconductor laser was injected into a solitary slave semiconductor laser. The slave laser subsequently exhibited synchronized chaotic output for a wide parameter range with strong injection and frequency detuning within the injection locking scheme. We also analytically examined chaos synchronization based on a linear stability analysis from the view point of synchronization based on a linear stability analysis from the view point of modulation response of injection locked semiconductor lasers to chaotic light signal.

Effects of the Injected ASE Bandwidth on the Performance of Wavelength-locked Fabry-Perot Laser Diodes

  • Park Kun-Youl;Baik Jin-Serk;Lee Chang-Hee
    • Journal of the Optical Society of Korea
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    • 제9권2호
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    • pp.45-48
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    • 2005
  • We investigate effects of the injected ASE (Amplified spontaneous emission) bandwidth on the performance of the wavelength-locked Fabry-Perot laser diodes (F-P LDs) under constant injection power density and constant injection power. For the constant injection power density, we can determine the minimum injection bandwidth by the required intensity noise or the bit-error rate (BER) performance. On the other hand, there exists the optimal ASE bandwidth for the constant injection power to minimize the intensity noise.

A New All-optical Flip-flop Based on Absorption Nulls of an Injection-locked FP-LD

  • Lee, Hyuek Jae
    • Current Optics and Photonics
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    • 제4권5호
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    • pp.405-410
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    • 2020
  • A new all-optical flip-flop (AOFF) method based on the absorption nulls of an injection-locked Fabry-Perot laser diode (FP-LD) in transverse magnetic (TM) mode is proposed and experimentally demonstrated. For the set and reset operations of the AOFF, injection locking and the destructive minus of beating in transverse electric (TE) mode are used. The absorption nulls on the TM mode are modulated according to the operations, and then non-inverted (Q) and inverted (${\bar{Q}}$) outputs can be obtained simultaneously. Thanks to the use of several absorption nulls, the proposed AOFF can achieve multiple outputs with extinction ratios of more than 15 dB. Even though the experiment is demonstrated at 100 Mbit/s, the results of previous experiments using the injection of a CW holding beam imply that the operation speed can increase to 10 Gbit/s.