• KOREAN JOURNAL OF CROP SCIENCE
• /
• v.49 no.spc1
• /
• pp.269-276
• /
• 2004

• Nuclear Engineering and Technology
• /
• v.50 no.8
• /
• pp.1349-1354
• /
• 2018

Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES) is widely used for the determination of trace elements in geological samples in Iran. In this paper, we have calculated the detection limits of neutron activation analysis (NAA) for some of the common elements in such samples utilizing the ORIGEN and MCNP codes and verified the simulations using the experimental results of three soil standard reference materials, namely, G02.SRM, G18.SRM, and G28.SRM. The results show that while the detection limit of ICP-AES method is usually in the mg/kg range, it is represented to the ${\mu}g/kg$ range for most of the elements of interest using the NAA method, and the simulations can be verified in a tolerance range of 20%.

• Bulletin of the Korean Chemical Society
• /
• v.28 no.4
• /
• pp.553-556
• /
• 2007

We previously reported a 27.12 MHz inductively coupled plasma source at atmospheric pressure for atomic emission spectrometry based on polymer microchip plasma technology. For the PDMS polymer microchip plasma, molecular emission was observed, but no metallic detection was done. In this experiment, a lab-made electrothermal vaporizer (ETV) with tantalum coil was connected to the microchip plasma for aqueous sample introduction to detect metal ions. The electrode geometry of this microchip plasma was redesigned for better stability and easy monitoring of emission. The plasma was operated at an rf power of 30-70 W using argon gas at 300 mL/min. Gas kinetic temperatures between 800-3200 K were obtained by measuring OH emission band. Limits of detection of about 20 ng/mL, 96.1 ng/mL, and 1.01 μ g/mL were obtained for alkali metals, Zn, and Pb, respectively, when 10 μ L samples in 0.1% nitric acid were injected into the ETV.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.11
• /
• pp.3206-3210
• /
• 2013

This study focused on the matrix interference for the qualitative and quantitative analysis of inorganic arsenic species in seaweed by ion chromatography (IC) combined with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The matrix of seaweed has a significant effect on the determination of inorganic arsenic species. In particular, the retention times of inorganic arsenic species in the in the standard solution were different from those in seaweed because of the matrix interference. Thus, it was not suitable to use the chromatographic method for the determination of the arsenic species in seaweed. We investigated an alternative method for the determination of inorganic arsenic species in seaweed. The method was applied for the seaweed samples such as laver, green laver, sea tangle and sea mustard. The sample extraction methods of the arsenic species were also investigated in this study.

• Journal of the Korean Chemical Society
• /
• v.44 no.6
• /
• pp.592-599
• /
• 2000

The fine particles of binary ceramic composite of titania-partially-stabilized zirconia(TPSZ) were synthesized by ultrasonic spray pyrolysis at the various temperatures, compositions and concentrations and the effects of process factors for synthesis on the characteristics of fine particles were discussed. The starting salt solutions were prepared to have the ionic concentrations of 0.025~0.1 M aqueous solutions. The fine particles were prepared to have the compositions of 90~97.5 wt% of $ZrO_2$ and 2.5~10 wt% of $TiO_2$. The temperatures for particle synthesis were regulated to be 400~550$^{\circ}C$ as a drying zone, 800~1100$^{\circ}C$ as a pyrolysis zone. The produced fine particles were collected by a wet process and analyzed to investigate characteristic properties after being dried. The compositions of ceramic fine particles were determined by Inductively Coupled Plasma-Atomic Emission Spectroscopy(ICP-AES) technique and phases, morphologies and particle sizes of those were investigated by Raman Spectroscopy, X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), Transmission Electron Microscopy(TEM) and Particle Size Analyzer(PSA) techniques.

• Transactions on Electrical and Electronic Materials
• /
• v.6 no.2
• /
• pp.46-50
• /
• 2005

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

• Analytical Science and Technology
• /
• v.24 no.2
• /
• pp.61-68
• /
• 2011

Ni-coated alumina was prepared by sonochemical method. To increase an efficiency of Ni coating on alumina, amorphous alumina was prepared by sol-gel method and Ni was coated to fine particles of alumina. Ni-coated alumina was prepared from various calcination temperatures ($500^{\circ}C$, $1,000^{\circ}C$), concentrations of Ni solution (0.01 M~0.2 M) and sonochemical reaction times (30 min, 2h). The prepared fine particles were characterized by X-Ray Diffractometer (XRD), Scanning Electron Microscope (SEM), Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES), and Particle Size Analyzer (PSA). The coating amount of Ni increased, as Ni concentration and ultrasonication time increased. The maximum amount of Ni was coated to fine particles of alumina, when Ni-coated alumina was prepared with 0.1 M concentration of Ni solution for 2 h of sonication time at $1000^{\circ}C$ of calcination temperature. The average particle size was in the range of 835.9 to 986.7 nm.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.2
• /
• pp.51-55
• /
• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• Journal of the Korean Vacuum Society
• /
• v.16 no.2
• /
• pp.110-115
• /
• 2007

A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.58-61
• /
• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.