• 한국작물학회지
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• 제49권spc1호
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• pp.269-276
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• 2004

• Nuclear Engineering and Technology
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• 제50권8호
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• pp.1349-1354
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• 2018

Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES) is widely used for the determination of trace elements in geological samples in Iran. In this paper, we have calculated the detection limits of neutron activation analysis (NAA) for some of the common elements in such samples utilizing the ORIGEN and MCNP codes and verified the simulations using the experimental results of three soil standard reference materials, namely, G02.SRM, G18.SRM, and G28.SRM. The results show that while the detection limit of ICP-AES method is usually in the mg/kg range, it is represented to the ${\mu}g/kg$ range for most of the elements of interest using the NAA method, and the simulations can be verified in a tolerance range of 20%.

• Bulletin of the Korean Chemical Society
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• 제28권4호
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• pp.553-556
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• 2007

We previously reported a 27.12 MHz inductively coupled plasma source at atmospheric pressure for atomic emission spectrometry based on polymer microchip plasma technology. For the PDMS polymer microchip plasma, molecular emission was observed, but no metallic detection was done. In this experiment, a lab-made electrothermal vaporizer (ETV) with tantalum coil was connected to the microchip plasma for aqueous sample introduction to detect metal ions. The electrode geometry of this microchip plasma was redesigned for better stability and easy monitoring of emission. The plasma was operated at an rf power of 30-70 W using argon gas at 300 mL/min. Gas kinetic temperatures between 800-3200 K were obtained by measuring OH emission band. Limits of detection of about 20 ng/mL, 96.1 ng/mL, and 1.01 μ g/mL were obtained for alkali metals, Zn, and Pb, respectively, when 10 μ L samples in 0.1% nitric acid were injected into the ETV.

• Bulletin of the Korean Chemical Society
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• 제34권11호
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• pp.3206-3210
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• 2013

This study focused on the matrix interference for the qualitative and quantitative analysis of inorganic arsenic species in seaweed by ion chromatography (IC) combined with inductively coupled plasma-atomic emission spectroscopy (ICP-AES). The matrix of seaweed has a significant effect on the determination of inorganic arsenic species. In particular, the retention times of inorganic arsenic species in the in the standard solution were different from those in seaweed because of the matrix interference. Thus, it was not suitable to use the chromatographic method for the determination of the arsenic species in seaweed. We investigated an alternative method for the determination of inorganic arsenic species in seaweed. The method was applied for the seaweed samples such as laver, green laver, sea tangle and sea mustard. The sample extraction methods of the arsenic species were also investigated in this study.

• 대한화학회지
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• 제44권6호
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• pp.592-599
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• 2000

여러 가지 온도, 조성 및 농도에서 이성분계 세라믹 복합체 TPSZ(titania partially-stabilized zirconia)의 미분말을 초음파분무열분해법에 의하여 합성하였으며, 합성공정인자가 분체특성에 미치는 영향을 검토하고, 합성된 분체의 특성을 조사하였다. 출발용액의 제조는 금속염의 농도가 0.025~0.1 M이 되도록 증류수에 용해하고, 그 조성비는 $ZrO_2$ 90~97.5 wt%에 $TiO_2$ 2.5~10 wt%가 되도록 하였다. 합성시 열분해 영역에서의 온도는 건조부가 400~550$^{\circ}C$, 반응부는 800~1100$^{\circ}C$로 하였으며, 합성된 분체는 습식으로 포집하여 110$^{\circ}C$에서 3시간 동안 건조하였다. 합성된 미분체의 특성을 Raman Spectroscopy, X-ray diffraction(XRD), Scanning Electron Microscopy(SEM), Transmission Electron Microscopy (TEM) 및 Particle Size Analyzer(PSA)로써 조사하였고, Inductively Coupled Plasma-Atomic Emission Spectroscopy(ICP-AES)로써 순도 및 조성을 분석하였다.

• Transactions on Electrical and Electronic Materials
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• 제6권2호
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• pp.46-50
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• 2005

BST thin films were etched with inductively coupled CF$_{4}$/(Cl$_{2}$+Ar) plasmas. The etch characteristics of BST thin films as a function of CF$_{4}$/(Cl$_{2}$+Ar) gas mixtures were analyzed using optical emission spectroscopy (OES) and Langmuir probe. The BST films in CF$_{4}$/Cl$_{2}$/Ar plasma is mainly etched by the formation of metal chlorides which depends on the emission intensity of the atomic Cl and the bombarding ion energy. The maximum etch rate of the BST thin films was 53.6 nm/min because small addition of CF$_{4}$ to the Cl$_{2}$/Ar mixture increased chemical and physical effect. A more fast etch rate of BST films can be obtained by increasing the DC bias and the RF power, and lowering the working pressure.

• 분석과학
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• 제24권2호
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• pp.61-68
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• 2011

알루미나에 니켈을 코팅하는 효율을 높이기 위하여 졸-겔법을 이용하여 비결정성 알루미나를 제조한 후, 음향화학법을 이용하여 니켈을 알루미나에 코팅하여 미립자를 제조하였다. 니켈을 코팅한 알루미나 미립자는 여러 가지 소성온도($500^{\circ}C$, $1,000^{\circ}C$), 니켈용액의 농도(0.01 M~0.2 M), 초음파반응시간 (30 min, 2 h)의 조건에서 제조하였다. 제조한 미분체는 X-Ray Diffractometer (XRD), Scanning Electron Microscope (SEM), Inductively Coupled Plasma Atomic Emission Spectroscopy (ICP-AES), Particle Size Analyzer (PSA)로 특성을 분석하였다. 니켈용액의 농도가 진해짐에 따라 그리고 초음파반응시간이 길수록 니켈의 코팅량이 증가하였다. 알루미나에 니켈을 코팅하는데 있어 $1000^{\circ}C$의 소성온도, 0.1 M의 니켈용액의 농도, 2시간의 초음파에 반응하였을 때 알루미나에 니켈이 가장 많이 코팅되었다. 그리고 평균입자의 크기는 835.9~986.7 nm였다.

• Transactions on Electrical and Electronic Materials
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• 제12권2호
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• pp.51-55
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• 2011

We investigated the etching characteristics of zinc oxide (ZnO) thin films deposited by the atomic layer deposition method. The gases of the inductively coupled plasma chemistry consisted of $Cl_2$, Ar, and $O_2$. The maximum etch rate was 40.3 nm/min at a gas flow ratio of $Cl_2$/Ar=15:5 sccm, radio-frequency power of 600 W, bias power of 200 W, and process pressure of 2 Pa. We also investigated the plasma induced damage in the etched ZnO thin films using X-ray diffraction (XRD), atomic force microscopy and photoluminescence (PL). A highly oriented (100) peak was present in the XRD spectroscopy of the ZnO samples. The full width at half maximum value of the ZnO sample etched using the $O_2/Cl_2$/Ar chemistry was higher than that of the as-deposited sample. The roughness of the ZnO thin films increased from 1.91 nm to 2.45 nm after etching in the $O_2/Cl_2$/Ar plasma chemistry. Also, we obtained a strong band edge emission at 380 nm. The intensities of the peaks in the PL spectra from the samples etched in all of the chemistries were increased. However, there was no deep level emission.

• 한국진공학회지
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• 제16권2호
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• pp.110-115
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• 2007

Atomic layer deposition(ALD)에 유도결합 플라즈마 소스를 채용하여 plasma enhanced ALD(PEALD)장치를 제작하고 플라즈마 발생 실험을 수행하였다. ALD와 PEALD를 이용하여 기판온도 $230^{\circ}C$에서 p-type Si(100)기판 위에 Co박막을 증착하였다. 이때, $Co_{2}(CO)_{6}$을 Co전구체로, 암모니아를 반응가스로, 아르곤을 캐리어(carrier) 및 퍼지(purge)가스로 사용하였다. 증착된 Co박막의 구성성분과 박막의 두께를 auger electron spectroscopy(AES)와 field emission scanning electron microscopy(FESEM)을 이용하여 분석하였다. ALD와 PEALD를 이용하여 증착된 Co박막에서 모두 불순물이 발견되었는데, PEALD의 경우 ALD에 비해 불순물의 양이 약 반으로 감소되었다. 암모니아 플라즈마가 Co전구체에 포함된 탄소와의 반응을 매우 효과적으로 유도하는 것으로 확인되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.58-61
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• 2002

SBT thin films were etched at different content of Cl$_2$in Cl$_2$/Ar plasma. We obtained the maximum etch rate of 883 ${\AA}$/min at Cl$_2$(20%)/Ar(80%). As Cl$_2$ gas increased in Cl$_2$/Ar plasma, the etch rate decreased. The maximum etch rate may be explained by variation of volume density for Cl atoms and by the concurrence of two etching mechanisms such as physical sputtering and chemical reaction with formation of low-volatile products, which can be desorbed only by ion bombardment. The variation of volume density for Cl, F and Ar atoms and ion current density were measured by the optical emission spectroscopy and Langmuir probe. To evaluate the physical damage due to plasma, X-ray diffraction and atomic force microscopy analysis carried out. After etching process, P-E hysteresis loops were measured by ferroelectric workstation.