• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.8 no.5
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• pp.452-461
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• 1997

In this paper, we present a computer-aided design(CAD) technique for minimizing the phase shift in microstrip PIN diode attenuators due to the junction capacitance in the equivalent circuit model of PIN diode. Microstrip PIN diode attenuators use the characteristics which the reactance of microstrip line changes from inductive to capacitive as the frequency sweeps across the band. Microstrip PIN diode attenuator designed utilizes the quarter-wavelength transmission line terminating with the half-moon radial stub, which is designed for negligible phase shifting effect over the intersted bandwidth. The attenuator has similar phase shift at 0 dB and 10 dB of attenuation within average $1.27^{\circ}$ between 1.2GHz and 1.9GHz. The input and output return losses between 1.4 GHz and 1.9 GHz are less than 10 dB over the attenuation range of 0 dB and 10 dB.

• Journal of the Korean Society for Railway
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• v.20 no.2
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• pp.190-195
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• 2017

This paper proposes a method to detect rail broken through impedance measurement. In general, broken rails are detected in real time using the track circuit, but the proposed method not only detects the broken rails but also estimates positions of broken areas by measuring the rail impedance. To electrically insulate one side of the rail, parallel resonance is made by adding a capacitor; then, the impedance of the other rail is measured. If the measured impedance has an inductive value, there is no broken area of rail. However if the measured impedance has a capacitive value, the rail is broken. The proposed method is modeled using a transmission line; it is shown that the modeling can estimate the position of the broken rail according to the impedance value. The rail impedance is measured by the proposed method for a 60m simple rail model, and it is verified that the presence of a broken rail changes the rail impedance.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.1
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• pp.102-109
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• 2000

In this paper, a Low Noise Amplifier for B-WLL was designed using the MMIC technology with GaAs PHEMTs fabricated at our lab. The PHEMT for LNA has a $0.35\mu\textrm{m}$ gate and a total gate width of $120\mu\textrm{m}$. The designed MMIC LNA consists of three stages. The first stage of the LNA has a series inductive feedback for obtaining minimum noise and high stability as well. And the designed MMIC LNA has not an interstage matching circuit between the second and the third stage for minimization of the chip size. From simulation results, noise figure and S21 gain of the designed MMIC LNA are 0.85~1.25 dB and 22.08~23.65 dB in the frequency range of 25.5~27.5 GHz respectively. And the chip size is $3.7\times1.6 mm^2$.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.774-777
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• 2005

In this paper, a constant frequency phase shifting PWM controlled voltage source full bridge-type series load resonant high-frequency inverter using the IGBT power modules is presented for innovative consumer electromagnetic induction heating applications such as a hot water producer, steamer and super heated steamer. The full bridge arm side link passive quasi-resonant capacitor snubbers in parallel with the each power semiconductor device and high frequency AC load side linked active edge inductive snubber-assisted series load resonant tank soft switching inverter with a constant frequency phase shifted PWM control scheme is discussed and evaluated on the basis of the simulation and experimental results. It is proved from a practical point of view that the series load resonant and edge resonant hybrid high-frequency soft switching PWM inverter topology, what is called class DE type. including the variable-power variable-frequency(VPVF) regulation function can expand zero voltage soft switching commutation range even under low output power setting ranges, which is more suitable and acceptable for induction heated dual packs fluid heater developed newly for consumer power utilizations. Furthermore, even in the lower output power regulation mode of this high-frequency load resonant tank high frequency inverter circuit it is verified that this inverter can achieve ZVS with the aid of the single auxiliary inductor snubber.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2005.11a
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• pp.415-420
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• 2005

This paper presents the two lossless auxiliary inductors-assisted voltage source type half bridge (single ended push pull: SEPP) series resonant high frequency inverter for induction heated king roller in copy and printing machines. The simple high-frequency inverter treated here can completely achieve stable zero current soft switching (ZCS) commutation for wide its output power regulation ranges and load variations under its constant high frequency pulse density modulation (PDM) scheme. Its transient and steady state operating principle is originally described and discussed for a constant high-frequency PDM control strategy under a stable ZCS operation commutation, together with its output effective power regulation characteristics-based on the high frequency PDM strategy. The experimental operating performances of this voltage source SEPP ZCS-PDM series resonant high frequency inverter using IGBTs are illustrated as compared with computer simulation results and experimental ones. Its power losses analysis and actual efficiency are evaluated and discussed on the basis of simulation and experimental results. The feasible effectiveness of this high frequency inverter appliance implemented here is proved from the practical point of view.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.7 no.8
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• pp.1621-1628
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• 2003

Packaging structures to block the propagation of higher­order modes in the shielded microstrip lines are designed. Packaging for microwave circuits is necessary, basically, to isolate and protect circuits from outside environments both physically and electrically. The drawback of packaging is the possibility of higher­order mode propagation, similar to waveguide modes, as the operating frequency increases. One of Possible choices for the higher­order mode suppression is to insert diaphragms to the housing structure. The shielding effects of diaphragms are analyzed using an FEM code. Several parameters such as dispersion, mode conversion, and higher­order mode transmission and reflection are analyzed. The effect of higher­order mode suppression is eminent as the depth or width of a diaphragm is increased in the air region of the microstrip line. It is shown that inductive diaphragm structure can lower ${S_21}$ for the second­order mode incidence by 30㏈, comparing with the conventional capacitive diaphragm structure. Packaging structure analyzed in this paper can be applied usefully to the design of the microwave system in a package such as transmit/receive modules.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.41-41
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• 2003

텅스텐(W)은 높은 thermal stability 와 process compatibility 및 우수한 corrosion r resistance 둥으로 integrated circuit (IC)의 gate 및 interconnection 둥으로의 활용이 대두되고 있으며, 차세대 thin film transistor liquid crystal display (TFT-LCD)의 gate 및 interconnection m materials 둥으로 사용되고 았다. 그러나, 이러한 장점을 가지고 있는 팅스텐 박막이 실제 공정상에 적용되가 위해서는 건식 식각이 주로 사용되는데, 이는 wet chemical 을 이용한 습식 식각을 사용할 경우 낮은 etch rate, line width 의 감소 및 postetch residue 잔류 동의 문제가 발생하기 때문이다. 또한 W interconnection etching 을 하기 위해서는 높은 텅스텐 박막의 etch rate 과 하부 layer ( (amorphous silicon 또는 poly-SD와의 높은 etch selectivity 가 필수적 이 라 할 수 있다. 그러 나, 지금까지 연구되어온 결과에 따르면 텅스탠과 하부 layer 와의 etch selectivity 는 2 이하로 매우 낮게 관찰되고 았으며, 텅스텐의 etch rate 또한 150nm/min 이하로 낮은 값을 나타내고 있다. 따라서 본 연구에서는 halogen-based inductively coupled plasma 를 이용하여 텅스텐 박막 식각시 여러 가지 첨가 가스에 따른 높은 텅스탠 박막의 etch rate 과 하부 layer 와의 높은 etch s selectivity 를 얻고자 하였으며, 그에 따른 식각 메커니즘에 대하여 알아보고자 하였다. $CF_4/Cl_2$ gas chemistry 에 첨 가 가스로 $N_2$와 Ar을 첨 가할 경 우 텅 스텐 박막과 하부 layer 간의 etch selectivity 증가는 관찰되지 않았으며, 반면에 첨가 가스로 $O_2$를 사용할 경우, $O_2$의 첨가량이 증가함에 따라 etch s selectivity 는 계속적으로 증가렴을 관찰할 수 있었다. 이는 $O_2$ 첨가에 따라 형성되는 WOF4 에 의한 텅스텐의 etch rates 의 감소에 비하여, $Si0_2$ 등의 형성에 의한 poly-Si etch rates 이 더욱 크게 감소하였기 때문으로 사료된다. W 과 poly-Si 의 식각 특성을 이해하기 위하여 X -ray photoelectron spectroscopy (XPS)를 사용하였으며, 식각 전후의 etch depth 를 측정하기 위하여 stylus p pmfilometeT 를 이용하였다.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.23 no.9
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• pp.1131-1138
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• 2019

The importance of coatings has been increasing for different purposes such as prevention of static electricity of auto parts or products, improvement of abrasion and corrosion resistance, and enhancement of esthetics. As a method for measuring the thickness of a coating film, a contact method with probe is commonly used. However, it is problematic that accuracy of the sensor is degraded due to sensor output distortion or load phenomenon, which is caused by a change in magnetic permeability of the core. In this study, we propose a method to reduce the measurement error of the coating film by applying the optimized circuit design and the thickness measurement algorithm to the problems caused by the nonlinear characteristics. The tests result which have been taken with different thickness coating samples show that the measurement accuracy is within ${\pm}2%$.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.22 no.4
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• pp.67-72
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• 2022

This study presents the design of power amplifier (PA) in 60 nm GaN/Si HEMT technology. A customized transistor model enables the designing circuits operating at W-band. The all matching network of the PA was composed of equivalent transformer circuit to reduce matching loss. And then, equivalent transformer is several advantages without any additional inductive devices so that a wideband power characteristic can be achieved. The designed die area is 3900 ㎛ × 2300 ㎛. The designed results at center frequency achieved the small signal gain of 15.9 dB, the saturated output power (Psat) of 29.9 dBm, and the power added efficiency (PAE) of 24.2% at the supply voltage of 12 V.

• Progress in Superconductivity and Cryogenics
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• v.8 no.2
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• pp.29-32
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• 2006

An advanced superconducting fault current limiter (SFCL) using $high-T_c$ superconducting (HTS) wire has been developed. The SFCL has a non-inductively wound magnet for reducing loss in normal state. Two types of non-inductively wound magnets, the solenoid type and the pancake type, were designed and manufactured by using Bi-2223 wire in this research. Short-circuit tests of the magnets were performed in sub-cooled $LN_2$ cooling system of 65 K. The magnets are thermally more stable and have a higher critical current in 65 K sub-cooled $LN_2$ cooling system than in 77 K saturated one. Because the resistivity of matrix at 65 K is lower than the resistivity at 77 K, the magnets generate a small resistance to reduce the fault current when the quench occurs. The magnets could limit the fault current to low current level with such a small resistance. The current limiting characteristic of the magnets was analyzed from the test result. The solenoid type was wound in parallel to make it non-inductive. The pancake type was also connected in parallel to be compared with the solenoid type in the same condition. The solenoid type was found to have a good thermal stability compared with the pancake type. It also had as large resistance as the pancake type to limit the fault current in sub-cooled $LN_2$ cooling system.