• Title/Summary/Keyword: Indium-tin oxide (ITO) film

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A Study on the Stability of Langmuir-Blodgett(LB) Films of L-${\alpha}$-Phosphatidylethanolamine Monolayer (L-${\alpha}$-Phosphatidylethanolamine 단분자층 LB막의 안정성에 관한 연구)

  • Park, Keun-Ho
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.1
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    • pp.44-49
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    • 2014
  • We were investigated by cyclic voltammetry to the stability through the electrochemical characteristics of phospholipid(L-${\alpha}$-phosphatidylethanolamine, LAPE) monolayer LB films. LAPE monolayer LB films was deposited by the LB method on the indium tin oxide(ITO) glass. The electrochemical properties was measured by cyclic voltammetry with a three-electrode system in 0.5 N, 1.0 N, 1.5 N and 2.0 N $KClO_4$ solution. The measuring range is continuously oxidized to 1650 mV, with an initial potential of -1350 mV was reduced. Scanning rates of 50, 100, 150, 200, and 250 mV/s was set. As a result, LB monolayer films of LAPE was appeared on irreversible processes by the oxidation current from the cyclic voltammogram. Diffusion coefficient (D) of LAPE was calculated 195, 15.9, 5.75, 1.38 and $0.754cm^2s^{-1}{\times}10^{-9}$ at 0.01 N, 0.05 N, 0.10 N, 0.15 N and 0.20 N $KClO_4$ solutions, respectively.

Effects of Hole Transport Layer Using Au-ionic Doping SWNT on Efficiency of Organic Solar Cells

  • Min, Hyung-Seob;Jeong, Myung-Sun;Choi, Won-Kook;Kim, Sang-Sig;Lee, Jeon-Kook
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.434-434
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    • 2012
  • Despite recent efforts for fabricating flexible transparent conducting films (TCFs) with low resistance and high transmittance, several obstacles to meet the requirement of flexible displays still remain. Indium tin oxide (ITO) thin films, which have been traditionally used as the TCFs, have a serious obstacle in TCFs applications. SWNTs are the most appropriate materials for conductive films for displays due to their excellent high mechanical strength and electrical conductivity. Recently, it has been demonstrated that acid treatment is an efficient method for surfactant removal. However, the treatment has been reported to destroy most SWNT. In this work, the fabrication by the spraying process of transparent SWNT films and reduction of its sheet resistance by Au-ionic doping treatment on PET substrates is researched. Arc-discharge SWNTs were dispersed in deionized water by adding sodium dodecyl sulfate (SDS) as surfactant and sonicated, followed by the centrifugation. The dispersed SWNT was spray-coated on PET substrate and dried on a hotplate. When the spray process was terminated, the TCF was immersed into deionized water to remove the surfactant and then it was dried on hotplate. The TCF film was then was doped with Au-ionic doping treatment, rinsed with deionized water and dried. The surface morphology of TCF was characterized by field emission scanning electron microscopy. The sheet resistance and optical transmission properties of the TCF were measured with a four-point probe method and a UV-visible spectrometry, respectively. This was confirmed and discussed on the XPS and UPS studies. We show that 87 ${\Omega}/{\Box}$ sheet resistances with 81% transmittance at the wavelength of 550 nm. The changes in electrical and optical conductivity of SWNT film before and after Au-ionic doping treatments were discussed. The effects of hole transport interface layer using Au-ionic doping SWNT on the performance of organic solar cells were investigated.

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Degradation Mechanisms of Organic Light-emitting Devices with a Glass Cap (유리 덮개로 보호된 OLED소자의 발광특성 저하 연구)

  • Yang Yong Suk;Chu Hye Yong;Lee Jeong-Ik;Park Sang-He;Hwang Chi Sun;Chung Sung Mook;Do Lee-Mi;Kim Gi Heon
    • Journal of the Korean Vacuum Society
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    • v.15 no.1
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    • pp.64-72
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    • 2006
  • We demonstrated organic light-emitting devices (OLEDs) based on the organic thin-film materials such as tris-(8-hydroxyquinoline) aluminum $(Alq_3)$. The structure of OLEDs was vacuum deposited upon transparent and thin glass substrates pre-coated with a transparent, conducting indium tin oxide thin film. The luminance characteristics, current, capacitance, and dispersion factor for degraded OLEDs, which were made by various bias currents $(0.5mA\;{\leq}\;I_{Bias}\;{\leq}9mA)$, are studied. The current dependences of lifetime were divided at approximately 2mA, and they represented nearly linear behaviors but had different slopes in a logarithmic plot of lifetime versus bias current. With lighting OLEDs, the anomaly of capacitance, as shown in the CV curve, occurred because of two factors, polarization in the bulk of organic materials and the interface between the metal and organic layers. In decayed OLEDs that had lower bias currents of less than 2mA, it was found that the degradation of luminance was related to both the decrease of polarization and to the lowering of the injection barrier.

A Study on Bismuth tri-iodide for X-ray direct and digital imagers (직접방식 엑스선 검출기를 위한 $BiI_3$ 특성 연구)

  • Lee, S.H.;Kim, Y.S.;Kim, Y.B.;Jung, S.H.;Park, J.K.;Jung, W.B.;Jang, M.Y.;Mun, C.W.;Nam, S.H.
    • Journal of the Korean Society of Radiology
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    • v.3 no.2
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    • pp.27-31
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    • 2009
  • Now a days, the Medical X-ray equipments has become digitalized from analog type such as film, cassette to CR, DR. And many scientists are still researching and developing the Medical X-ray equipment. In this study, we used the Bismuth tri-iodide to conversion material for digital X-ray equipments and we couldn't get the satisfying result than previous study, but it opened new possibility to cover the disadvantage of a-Se is high voltage aplly and difficultness of make. In this paper, we use $BiI_3$ powder(99.99%) as x-ray conversion material and make films that have thickness of 200um and the film size is $3cm{\times}3cm$. Also, we deposited an ITO(Indium Tin Oxide) electrode as top electrode and bottom electrode using a Magnetron Sputtering System. To evaluate a characteristics of the produced films, an electrical and structural properties are performed. Through a SEM analysis, we confirmed a surface and component part. And to analyze the electrical properties, darkcurrent, sensitivity and SNR(Signal to Noise Ratio) are measured. Darkcurrent is $1.6nA/cm^2$ and sensitivity is $0.629nC/cm^2$ and this study shows that the electrical properties of x-ray conversion material that made by screen printing method are similar to PVD method or better than that. This results suggest that $BiI_3$ is suitable for a replacement of a-Se because of the reduced manufacture processing and improved yield.

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