• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.39 no.9
• /
• pp.1-10
• /
• 2002

We have done various treatments of indium tin oxide (ITO) surface for organic light-emitting diodes (OLEDs), and investigated the surface states by different surface treatments using atomic force microscopy (AFM) and Auger electron spectroscopy (AES). We have fabricated OLEDs deposited by ultra-high vacuum molecular beam deposition system and studied the characteristics of the OLEDs. We have observed the dramatical improvement of the performance of OLEDs fabricated on ITO substrates treated by $O_2$ plasma treatment reduces the carbon comtamination of ITO surfaces and increases the work function of ITO.

• Journal of Advanced Marine Engineering and Technology
• /
• v.40 no.4
• /
• pp.325-329
• /
• 2016

In this study, we investigated the feasibility of using printed Indium Tin Oxide (ITO) film as a remote sensor for Hazardous and Noxious Substances (HNS). To improve the quality of the ITO films, binder mixing ratio, Sn concentration in ITO, thermal treatment temperature, and printing process conditions were optimized. We fabricated an electrical resistance-type liquid sensor, and to confirm the sensor operation, the change in resistance in air and seawater was monitored. The change in resistance of the ITO sensor was explained in terms of reduction reaction on the surface. Further, the sensor was controlled by Arduino, and the remote data acquisition was demonstrated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1995.11a
• /
• pp.302-305
• /
• 1995

ITO(indium tin oxide) that is both conductive in electricity and transparent to the visible ray is called transparent conducting thin film. Nowaday, according to the development of flat panel display such as LCD(Liquid Crystal display, EL(electolumine- scence display), PDP(plasma display panel), ECD(electrocromic display), the higher quality in the low temperature process has been asked to reduce the production cost and to have a good uniformity on a large substrate. In this study, we prepared indium tin oxide(ITO) by a cylindrical DC magnetron sputtering with Indium-tin (9:1) alloy target instead of indium-tin oxide target. To reduce the defact in ITO, the effect on ITO by varing the magnetic field intensity and the applied voltage ares studied. the resistivity of the film deposited in oxygen partial pressure of 5% and substrate temperature of 140$^{\circ}C$. is 1.6${\times}$10$\^$-1/$\Omega$$.$cm with 85% optical transmission in viaible ray.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.11a
• /
• pp.510-514
• /
• 1997

The thin film that is electrically conductive and optically transparent is called conductive transparent thin film. ITO(Indium-Tin Oxide) which is a kind of conductive transparent thin film has been widely used in solar cell, transparent electrical heater, selective optical filter, FDP(Flat Display Panel) such as LCD(Liquid Crystal Display), PDP(Plasma Display Panel) and so on. Especially in PDP, ITO films is used as a transparent electrode in order to maintain discharge and decrease consumption power through the improvement of cell structure. In this study, we prepared ITO by reactive r.f. sputtering with indium-tin(Sn 10wt%) alloy target instead of indium-tin oxide target. The ITO films deposited at low temperature 15$0^{\circ}C$ and 8% $O_2$. Partial pressure showed about 3.6 Ω/$\square$. At the end of firing, the resistance of ITO was decreased, the optical transparence was improved above 90%.

• Journal of IKEEE
• /
• v.20 no.2
• /
• pp.171-173
• /
• 2016

In this study, we fabricate a high efficiency heater consisting of the indium tin oxide (ITO) nanoparticle (NP)-paste and polydimethylsiloxane (PDMS) and investigate the effect of PDMS on temperature maintenance of the heater through the comparison with the PDMS-free ITO film heater. Compared to the ITO film heater, the temperature of the PDMS/ITO film heater lasts 1.5 times longer. And the power consumption of the PDMS/ITO film heater is reduced by 35%, owing to the low thermal conductivity of the PDMS layer.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.56 no.3
• /
• pp.561-565
• /
• 2007

We propose glass and PDMS (polydimethylsiloxane) chips for DNA amplification with continuous-flow PCR (polymerase chain reaction). The PDMS microchannel was fabricated using a negative molding method for sample injection. Three heaters and sensors of ITO (indium-tin-oxide) thin films were fabricated on glass chip. ITO heaters and sensors were calibrated accurately for the temperature control of the liquid flow. ITO heater generated stable heat versus applied power. ITO sensor resistance was changed linearly versus temperature increase as a RTD (resistance temperature detector) sensor. As a result, we enable precision temperature control of continuous-flow PCR chip. Using the continuous-flow PCR chip DNA plasmid pKS-GFP 720 bp was successfully amplified.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11b
• /
• pp.316-319
• /
• 2001

Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 $cd/m^{2}$ at 8 V

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.11a
• /
• pp.316-319
• /
• 2001

Organic light emitting diodes(OLEDs) with a hole injection layer inserted between Indium-Tin-Oxide(ITO) anode and hole transport layer were fabricated. The effect of plasma treatment on the surface properties of Indium-Tin-Oxide(ITO) anode were studied. The electrical and optical characteristics of the fabricated organic light emitting diodes(OLEDs) were also studied. The diode including of plasma treated ITO substrate and the hole injection layer, which showed the luminance of 5280 cd/㎡ at 8 V

• Polymer(Korea)
• /
• v.36 no.3
• /
• pp.393-400
• /
• 2012

The characteristics of indium tin oxide (ITO) thin film deposited on polyethersulfone (PES) film by low temperature E beam has been studied for the flexible photovoltaic devices. It was found that the substrate temperature in the deposition process affected the crystallization behavior of ITO during the post low temperature annealing process. Higher substrate temperature resulted in the increase of crystallinity of annealed ITO. Consequently, the lowering of sheet resistivity and better transmittance were obtained. Crystallization of ITO during the annealing process was facilitated by using oxygen gas in the deposition process and resulted in the enhancement on sheet resistivity and transmittance of ITO. The surface roughness of PES film prohibited the crystallization of ITO during the annealing process and it caused the increase of sheet resistivity and the decrease of transmittance of ITO.

• Journal of the Korean Vacuum Society
• /
• v.5 no.1
• /
• pp.54-61
• /
• 1996

Indium-tin oxide (ITO) films were deposited on the glass substrate by the reactive -ionized cluster beam deposition(ICBD) method. In the oxygen atmosphere, indium cluster formed through the nozzle is ionized by the electron bombardment and is accelerated to be deposited on the substrate. And tin is simultaneoulsy evaporated from the boron-nitride crucible. The chracteristics of films were examined by the X-ray photoelectron spectroscopy(XPS), glancing angle X-ray diffractrion(GXRD) and the electrical properties. were measured by 4-point-probe and Hall effect measurement system . From the XPS spectrum , it was found that indium and tin atoms combined with the oxygen to form oxide$(In_2O_3, SnO_2)$. In the case of films with high tin-concentration, the GXRD spectra show that the main $In_2O_3$ peak of (222) plane, but also sub peaks((440) peak etc.) and $SnO_2$ peaks were detected. From that results, itis concluded that the heavily dopped tin component (more than 14 at. %) disturbs to form $In_2O_3$(222) phase. Four-point-probe and Hall effect measurement show that, in the most desirable case, the transmittance of the films is more then 90% in visible range and its resistivity is $$\rho$=3.55 \times10^{-4}\Omega$cm and its mobility is $\mu$=42.8 $\textrm{cm}^2$/Vsec.