• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.02a
• /
• pp.251-251
• /
• 2008

• Proceedings of the Korean Vacuum Society Conference
• /
• 2004.08a
• /
• pp.267-267
• /
• 2004

• Bulletin of the Korean Chemical Society
• /
• v.31 no.11
• /
• pp.3415-3417
• /
• 2010

• Proceedings of the Korean Vacuum Society Conference
• /
• 2008.08a
• /
• pp.108-108
• /
• 2008

• Proceedings of the Korean Vacuum Society Conference
• /
• 2002.06a
• /
• pp.71-71
• /
• 2002

• Proceedings of the Korean Ceranic Society Conference
• /
• 2003.10a
• /
• pp.73.2-73
• /
• 2003

• Proceedings of the Korean Vacuum Society Conference
• /
• 2006.08a
• /
• pp.123-123
• /
• 2006

• Journal of the Korean institute of surface engineering
• /
• v.42 no.3
• /
• pp.128-132
• /
• 2009

Transparent conducting thin films of indium tin oxide(ITO) co-sputtered with aluminum-doped zinc oxide(AZO) were deposited on glass substrate by dual magnetron sputtering. It was found that the electrical properties and structural characteristics of the films are significantly changed according to the sputtering power of the AZO target. The IAZTO film prepared with D.C power of ITO at 100 W and R.F power of AZO at 50 W shows an electrical resistivity of $4.6{\times}10^{-4}{\Omega}{\cdot}cm$ and a sheet resistance of $30{\Omega}/{\square}$ (for 150 nm thick). Besides of the improvement of the electrical properties, compared to the ITO films deposited at the same process conditions, the IAZTO films have very smooth surface, which is due to the amorphous nature of the films. However, the electrical conductivity of the IAZTO films was found to be deteriorated along with the crystallization in case of the high temperature deposition (above $310^{\circ}C$). In this work, high quality amorphous transparent conductive oxide layers could be obtained by mixing AZO with ITO, indicating possible use of IAZTO films as the transparent electrodes in OLED and flexible display devices.

• Journal of Sensor Science and Technology
• /
• v.24 no.4
• /
• pp.219-223
• /
• 2015

Indium free consisting of three alternating layers GTO/Ag/GTO has been fabricated by radio-frequency (RF) sputtering for the applications as transparent conducting electrodes and the structural, electrical and optical properties of the gallium tin oxide (GTO) films were carefully studied. The gallium tin oxide thin films deposited at room temperature are found to have an amorphous structure. Hall Effect measurements show a strong influence on the conductivity type where it changed from n-type to p-type at $700^{\circ}C$. GTO/Ag/GTO multilayer structured electrode with a few nm of Ag layer embedded is fabricated and show the optical transmittance of 86.48% in the visible range (${\lambda}$ = 380~770 nm) and quite low electrical resistivity of ${\sim}10^{-5}{\Omega}cm$. The resultant power conversion efficiency of 2.60% of the multilayer based OPV (GAG) is lower than that of the reference commercial ITO. GTO/Ag/GTO multilayer is a promising transparent conducting electrode material due to its low resistivity, high transmittance, low temperature deposition and low cost components.

• Transactions on Electrical and Electronic Materials
• /
• v.5 no.3
• /
• pp.122-125
• /
• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.