• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05b
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• pp.42-43
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• 1992

• Bulletin of the Korean Chemical Society
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• v.24 no.2
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• pp.155-156
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• 2003

• Proceedings of the KWS Conference
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• 2002.05a
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• pp.282-284
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• 2002

• Bulletin of the Korean Chemical Society
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• v.23 no.6
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• pp.797-799
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• 2002

• Proceedings of the Korean Powder Metallurgy Institute Conference
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• 2005.04a
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• pp.35-36
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• 2005

• Bulletin of the Korean Chemical Society
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• v.32 no.10
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• pp.3796-3798
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• 2011

• Bulletin of the Korean Chemical Society
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• v.28 no.11
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• pp.1929-1930
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• 2007

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2003.05a
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• pp.2-2
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• 2003

• Journal of the Korean Electrochemical Society
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• v.3 no.1
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• pp.11-14
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• 2000

Transparent conducting ITO thin films have been studied and developed for the solar cell substrate or LCD substrate. ITO thin film has been mostly fabricated by high cost sputtering method. In this research, sol-gel method is applied to fabricate ITO thin film at lower cost. The research is focused on the establishment of process condition and development of precursor. Organic sol was made of indium tri-isopropoxide dissolved in ethylene glycol monoethyl ether. The hydrolysis was controled by addition of acetyl acetone. Tin(IV) chloride was added as dopant. Inorganic sol was made of indium acetate dissolve din normal propanol. Spin coating technique was applied to coat ITO on borosilicate glass. The resistivity of ITO thin film was approximately $0.01\Omega{\cdot}cm$ and the transmittance is higher than $90\%$ in a visible range.

• Korean Journal of Materials Research
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• v.21 no.8
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• pp.432-438
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• 2011

In this study, chemical bath deposited (CBD) indium sulfide buffer layers were investigated as a possible substitution for the cadmium sulfide buffer layer in CIGS thin film solar cells. The performance of the $In_2S_3$/CIGS solar cell dramatically improved when the films were annealed at $300^{\circ}C$ in inert gas after the buffer layer was grown on the CIGS film. The thickness of the indium sulfide buffer layer was 80 nm, but decreased to 60 nm after annealing. From the X-ray photoelectron spectroscopy it was found that the chemical composition of the layer changed to indium oxide and indium sulfide from the as-deposited indium hydroxide and sulfate states. Furthermore, the overall atomic concentration of the oxygen in the buffer layer decreased because deoxidation occurred during annealing. In addition, an In-thin layer was inserted between the indium sulfide buffer and CIGS in order to modify the $In_2S_3$/CIGS interface. The $In_2S_3$/CIGS solar cell with the In interlayer showed improved photovoltaic properties in the $J_{sc}$ and FF values. Furthermore, the $In_2S_3$/CIGS solar cells showed higher quantum efficiency in the short wavelength region. However, the quantum efficiency in the long wavelength region was still poor due to the thick buffer layer.