• 한국광학회지
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• 제5권4호
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• pp.499-504
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• 1994

불꽃가수분해 증착방법으로 $SiCl_{4}$, TMB, $TiCL_{4}$등을 사용하여 Ti doped BSG 실리카 입자박막을 실리콘 기판위에 증착하고 증착된 입자층을 녹여서 집적광학용 박막을 제작하였다. 박막의 증착 속도는 $0.5{\mu}m$분 이상으로서 수십 ${\mu}m$의 후막을 빠르게 증착할 수 있었으며 $TiO_{2}$의 첨가량에 따라 BSG 박막의 굴절률을 0.3% 이상 변화시킬 수 있었다. 그 결과 통신용 광섬유와 크기 및 굴절률 분포가 BSG박막의 굴절률을 0.3% 이상 변화시킬 수 있었다. 그 결과 통신용 광섬유와 크기 및 굴절률 분포가 유사한 광도파로를 제작하였다. 보통 B의 도판트로는 $BCl_{3}$를 쓰나 여기서는 TBM를 사용한 결과 TBM도 B의 도판트로 적합함을 알았다. B의 첨가에 의하여 실리카 입자막의 녹는점을 $1200^{\circ}C$로 낮출 수 있었다. 또한 FTIR에 의한 박막의 조성비분석 결과 BSG박막에 $B_2O_3$ 함량이 최대 10mol%로 나타났다.

• 전기학회논문지
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• 제58권1호
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• pp.147-154
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• 2009

This paper presents a grating~integrated SPR (Surface Plasmon Resonance) sensor chip for simple and inexpensive biomolecule detection. The grating-integrated SPR sensor chip has two sensing channels having a nano grating for SPR coupling. An external mirror is used for multi channel SPR sensing. The present sensor chip replaces bulky and expensive optical components, such as fiber-optic switches or special shaped prisms, resulting in a simple and inexpensive wavelength modulated multi-channel SPR sensing system. We fabricate a SPR sensor chip integrated with 835 nm-pitch gratings by a micromolding technique to reduce the fabrication cost. In the experimental characterization, the refractive index sensitivity of each sensing channel is measured as $321.8{\pm}8.1nm$/RI and $514.3{\pm}8.lnm$/RI, respectively. 0.5uM of the target biomolecule (streptavidin) was detected by a $1.13{\pm}0.16nm$ shift of the SPR dip in the 10%-biotinylated sample channel, while the SPR dip in the reference channel for environmental perturbation monitoring remained at the same position. From the experimental results, multi-channel biomolecule detection capability of the present grating-integrated SPR sensor chip has been verified. On the basis of the preliminary experiments, we successfully measured the binding reaction rate for the $2\;nM{\sim}200\;nM$ monoclonal-antibiotin, thus verifying biomolecule concentration detectability of the present SPR sensor chip. The binding reaction rates measured from the present SPR sensor chip agredd well with those from a commercialized SPR sensor.

• 한국진공학회지
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• 제17권1호
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• pp.46-50
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• 2008

Febry-Perot 프린지 패턴의 광 반사성을 가지고 있는 다공성 실리콘을 이용하여 암호화된 광학 이미지를 제작하였다. 암호화된 광학이미지 다공성 실리콘 샘플은 p-type 실리콘 웨이퍼 (boron-doped,<100> orientation, resistivity $0.8{\sim}1.2m{\Omega}-cm$)를 이용하여 빔 프로젝트의 광원과 전기화학적 식각을 통하여 만들어 졌다. 광학 이미지 다공성 실리콘 샘플은 전기화학적 식각과정에 빔 프로젝트의 광원에 의하여 톡특한 Febry-Perot 프린지 패턴을 나타낸다. 실리콘 웨이퍼의 광 반사성의 프린지 패턴을 퓨리에 변환을 통하여 유효광학두께를 측정하고 실리콘웨이퍼에 암호화 시킨 광학이미지를 제작하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.359-359
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• 2014

In this study, surface plasmon resonance structures for the selective and the enhanced transmission of infrared light were designed. In order to relieve the large discontinuity of refractive index between air and metal hole array, $Si_3N_4$ was used as the impedance matching layer. Experimental parameter were calculated and determined in advance by the rigorous coupled wave analysis (RCWA) simulation, and then the experiment was carried out. A 2-dimensional metal hole array structures were patterned on the size of $1{\times}1cm^2$ GaAs substrate using photolithography process, and 5 nm thick Ti, 50 nm thick Au were deposited by E-beam evaporator, respectively. Subsequently, $Si_3N_4$ films with various thicknesses (150, 350, 550, and 750 nm) were deposited by plasma enhanced chemical vapor deposition (PECVD). For the comparison, transmittance of specimens with and without $Si_3N_4$ was measured using Fourier transform infrared spectroscopy (FTIR) in the range of $2.5-15{\mu}m$. Furthermore, the surface and the cross-sectional images were collected from the specimens by scanning electron microscopy (SEM). From the results, it was demonstrated that the transmittance was enhanced up to 80% by the deposition of 750 nm $Si_3N_4$ at $6.23{\mu}m$. It has advantage of enhanced transmission despite the simple fabrication process.

• 한국광학회지
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• 제4권3호
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• pp.266-275
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• 1993

Si 기판 위에 low pressure chemical vapor deposition 방법에 의해 TEOS (tetraethylorthosilicate)와 TMPite (trimethylphosphite)를 재료로하여 집적광학용 $P_2O_5-SiO_2$ 박막을 만들고 그 특성을 조사하였다. TEOS의 반응에 TMPite가 참여함으로서 반응활성화에너지는 54.6 kcal/mole에서 39.2 kcal/mole로 크게 낮아졌으며 박막의 증착속도와 P 농도는 TMPite의 유량에 비례하여 증가하였다. 또한 증착온도가 높을스록 박막의 증착속도는 증가하나 P 농도는 감소하였다. 제작된 박막의 굴절률은 P 농도 1wt% 당 0.0019로 P 농도에 비례하여 증가하였다. 측정된 박막 불균일도는 두께 ${\pm}$7% 및 P 농도 ${\pm}$0.5wt% 정도로서 이러한 불균일성은 주로 TMPite의 불균일한 수송에 기인함을 보였다. 또한 P 농도가 10wt% 이상인 박막을 대기중에 장시간 노출하면 표면에 인산이 석출됨을 확인하였다.

• 센서학회지
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• 제9권1호
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• pp.15-21
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• 2000

단일모드 광섬유와 평면도파로 결합기의 열에 의하여 공진파장이 이동하는 현상을 이용한 광섬유형 온도센서를 구현하였다. 평면도파로는 열에 의한 굴절률 변화가 큰 열광학폴리머를 사용하였다. 광섬유 연마과정 등의 소자제작 공정을 소개하고, 편광에 무관하게 동작하는 광소자 구조를 실험으로 검증하였다. 제작된 소자의 편광에 따른 공진파장의 차이는 2nm 이하였다. 실온($24^{\circ}C$)에서 $90^{\circ}C$까지의 온도변화에 의한 공진파장의 변화는 $-0.54nm/^{\circ}C$, $-3nm/^{\circ}C$의 특성을 보였다.

• 한국세라믹학회지
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• 제39권12호
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• pp.1158-1163
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• 2002

2차 비선형 광특성을 유도하기 위한 UV 폴링용 Ge와 B가 첨가된 광민감성 광섬유를 제조하였다. 248 nm KrF 엑시머 레이저 조사에 의하여 수소처리 없이 장주기 격자를 형성할 수 있었다. 116 mJ/$cm^2$의 펄스 에너지와 10 Hz의 조사 빈도로 1분간 광민감성 광섬유에 레이저를 조사할 경우 -4 dB의 큰 band rejection 특성을 얻을 수 있었다. 제조된 광섬유의 광민감성은 장주기 격자쌍 방법을 이용하여 측정하였으며, 8.67 kJ/$cm^2$의 fluence로 KrF 엑시머 레이저를 조사할 경우 3.3${\times}10^{-3}$의 큰 코어 굴절률 변화를 얻었다. 또한 UV 폴링 시에 광섬유 코어에 고전압을 쉽게 인가할 수 있는 H자 형상의 광섬유를 인출조건의 최적호를 통하여 제조하였다.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 춘계학술발표대회 논문집
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• pp.105-110
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• 2011

The doping procedure in crystalline silicon solar cell fabrication usually contains oxygen injection during drive-in process and removal of phosphorous silicate glass(PSG). In this paper, we studied the effect of oxygen injection and PSG on conversion efficiency of solar cell. The mono crystalline silicon wafers with $156{\times}156mm^2$, $200{\mu}m$, $0.5-3.0{\Omega}{\cdot}cm$ and p-type were used. After etching $7{\mu}m$ of the surface to form the pyramidal structure, the P(phosphorous) was injected into silicon wafer using diffusion furnace to make the emitter layer. After then, the silicon nitride was deposited by the PECVD with 80 nm thickness and 2.1 refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in 400-425-450-550-$880^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Solar cells with four different types were fabricated with/without oxygen injection and PSG removal. Solar cell that injected oxygen during the drive-in process and removed PSG after doping process showed the 17.9 % conversion efficiency which is best in this study. This solar cells showed $35.5mA/cm^2$ of the current density, 632 mV of the open circuit voltage and 79.5 % of the fill factor.

• 한국태양에너지학회 논문집
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• 제33권2호
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• pp.11-17
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• 2013

Silicon nitride($SiN_x:H$) deposited by radio frequency plasma enhanced chemical vapor deposition(RF-PECVD) is commonly used for anti-reflection coating and passivation in crystalline silicon solar cell fabrication. In this paper, characteristics of the deposited silicon nitride was studied with change of working pressure, deposition temperature, gas ratio of $NH_3$ and $SiH_4$, and RF power during deposition. The deposition rate, refractive index and effective lifetime were analyzed. The (100) p-type silicon wafers with one-side polished, $660-690{\mu}m$, and resistivity $1-10{\Omega}{\cdot}cm$ were used. As a result, when the working pressure increased, the deposition rate of SiNx was increased while the effective life time for the $SiN_x$-deposited wafer was decreased. The result regarding deposition temperature, gas ratio and RF power changes would be explained in detail below. In this paper, the optimized condition in silicon nitride deposition for silicon solar cell was obtained as 1.0 Torr for the working pressure, $400^{\circ}C$ for deposition temperature, 500 W for RF power and 0.88 for $NH_3/SiH_4$ gas ratio. The silicon nitride layer deposited in this condition showed the effective life time of > $1400{\mu}s$ and the surface recombination rate of 25 cm/s. The crystalline silicon solar cell fabricated with this SiNx coating showed 18.1% conversion efficiency.

• 한국태양에너지학회:학술대회논문집
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• 한국태양에너지학회 2011년도 추계학술발표대회 논문집
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• pp.51-55
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• 2011

In this paper, the optimized doping condition of crystalline silicon solar cells with 156 ${\times}$ 156 mm2 area was studied. To optimize the drive-in condition in the doping process, the other conditions except drive-in temperature and time were fixed. After etching 7 ${\mu}m$ of the surface to form the pyramidal structure, the silicon nitride deposited by the PECVD had 75~80 nm thickness and 2 to 2.1 for a refractive index. The silver and aluminium electrodes for front and back sheet, respectively, were formed by screen-printing method, followed by firing in $400-425-450-550-850^{\circ}C$ five-zone temperature conditions to make the ohmic contact. Drive-in temperature was changed in range of $828^{\circ}C$ to $860^{\circ}C$ and time was from 3 min to 40 min. The sheet resistance of wafer was fixed to avoid its effect on solar cell. The solar cell fabricated with various conditions showed the similar conversion efficiency of 17.4%. This experimental result showed the drive-in temperatures and times little influence on solar cell characteristics.